• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.195-200
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• 1998

We have investigated the crystal structure and electrical properties of Pt/SBT/$CeO_2$/Si(MFIS) and Pt/SBT/Si(MFS) structures for the gate oxide of ferroelectric memory. XRD spectra and SEM showed that the SBT film of SBT/$CeO_2$/Si structure had larger grain than that of SBT/Si structure. Furthermore HRTEM showed that SBT/$CeO_2$/Si had 5 nm thick $SiO_2$layer and very smooth interface but SBT/Si had 6nm thick $SiO_2$layer and 7nm thick amorphous intermediate interface. Therefore, $CeO_2$film between SBT film and Si substrate is confirmed as a good candidate for a diffusion barrier. The remanent polarization decreased and coercive voltage increased in Pt/SBT/$CeO_2/Pt/SiO_2$/Si structure. This effect may increase memory window of MFIS structure directly related to the coercive voltage. From the capacitance-voltage characteristics, the memory of Pt/SBT(140 nm)/$CeO_2$(25 nm)/Si structure were in the range of 1~2 V at the applied voltage of 4~6 V. The memory window increased with the thickness of SBT film. These results may be due to voltage applied at SBT films. The leakage currents of Pt/SBT/$CeO_2$/Si and Pt/SBT/Si were $ 10^8A/\textrm{cm}^2$ and $ 10^6 A/\textrm{cm}^2$, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.993-994
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• 2008

Electrochromic (EC) devices are capable of reversibly changing their optical properties upon charge injection and extraction induced by the external voltage. The characteristics of the EC device, such as low power consumption, high coloration efficiency, and memory effects under open circuit status, make them suitable for use in a variety of applications including smart windows and electronic papers. Coloration due to reduction or oxidation of redox chromophores can be used for EC devices (e-paper), but the switching time is slow (second level). Recently, with increasing demand for the low cost, lightweight flat panel display with paper-like readability (electronic paper), an EC display technology based on dye-modified $TiO_2$ nanoparticle electrode was developed. A well known organic dye molecule, viologen, was adsorbed on the surface of a mesoporous $TiO_2$ nanoparticle film to form the EC electrode. On the other hand, ZnO is a wide bandgap II-VI semiconductor which has been applied in many fields such as UV lasers, field effect transistors and transparent conductors. The bandgap of the bulk ZnO is about 3.37 eV, which is close to that of the $TiO_2$ (3.4 eV). As a traditional transparent conductor, ZnO has excellent electron transport properties, even in ZnO nanoparticle films. In the past few years, one-dimension (1D) nanostructures of ZnO have attracted extensive research interest. In particular, 1D ZnO nanowires renders much better electron transportation capability by providing a direct conduction path for electron transport and greatly reducing the number of grain boundaries. These unique advantages make ZnO nanowires a promising matrix electrode for EC dye molecule loading. ZnO nanowires grow vertically from the substrate and form a dense array (Fig. 1). The ZnO nanowires show regular hexagonal cross section and the average diameter of the ZnO nanowires is about 100 nm. The cross-section image of the ZnO nanowires array (Fig. 1) indicates that the length of the ZnO nanowires is about $6\;{\mu}m$. From one on/off cycle of the ZnO EC cell (Fig. 2). We can see that, the switching time of a ZnO nanowire electrode EC cell with an active area of $1\;{\times}\;1\;cm^2$ is 170 ms and 142 ms for coloration and bleaching, respectively. The coloration and bleaching time is faster compared to the $TiO_2$ mesoporous EC devices with both coloration and bleaching time of about 250 ms for a device with an active area of $2.5\;cm^2$. With further optimization, it is possible that the response time can reach ten(s) of millisecond, i.e. capable of displaying video. Fig. 3 shows a prototype with two different transmittance states. It can be seen that good contrast was obtained. The retention was at least a few hours for these prototypes. Being an oxide, ZnO is oxidation resistant, i.e. it is more durable for field emission cathode. ZnO nanotetropods were also applied to realize the first prototype triode field emission device, making use of scattered surface-conduction electrons for field emission (Fig. 4). The device has a high efficiency (field emitted electron to total electron ratio) of about 60%. With this high efficiency, we were able to fabricate some prototype displays (Fig. 5 showing some alphanumerical symbols). ZnO tetrapods have four legs, which guarantees that there is one leg always pointing upward, even using screen printing method to fabricate the cathode.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.460-466
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• 2002

Titanium oxide film was deposited on the commercially pure titanium (cp-Ti) by thermal oxidation method for its medical application. The cp-Ti disks were cleaned and then heat-treated at the temperatures of 500, 550, 600, 650, and 700${\circ}C$, respectively, for 10 min in air or Ar. To test the ability of calcium phosphate formation, the specimens were immersed in the Eagle's minimum essential medium solution at 36.5${\circ}C$ for 15 days. The morphology and chemical composition of the surfaces before and after soaking were analyzed by using FE-SEM and EDS. The in-vitro formation of carbonated calcium phosphate on the thin films containing nano-sized $TiO_2$ crystals was identified.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.145-145
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• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.7-11
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• 2014

Recently, the buffer layers consisting of poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) (PEDOT-PSS) are extensively used to improve power conversion efficiency (PCE) of organic solar cells. However, PEDOT-PSS is not suitable for mass production of organic solar cells due to its intrinsic acid and hygroscopic properties. Moreover, because of chemical reactions between indium tin oxide (ITO) layer and PEDOT-PSS layer, the interface is not stable. For these reasons, alternative materials such as $V_2O_5$ have been developed to be an effective buffer layer. In this work, we used $V_2O_5$/Ag/ITO multilayer structure for the anode buffer layer. With variation of thickness of Ag layer, we investigated the optical and electrical properties of $V_2O_5$/Ag/ITO multi-layer films. As a result, we found that the electrical properties were improved with increasing Ag thickness while optical transmittance decreases in visible wavelength region. From the calculation of figure of merit (FOM) which is used to evaluate proper structure for transparent of optoelectronic, $V_2O_5$/Ag/ITO multilayer electrode was optimized with 4 nm thick Ag layer in optical (88% in transmittance) and electrical ($4{\times}10^{-4}{\Omega}cm$) properties. This indicates that $V_2O_5$/Ag/ITO multilayer electrode could be a candidate for the anode of optoelectronic devices.

• Applied Chemistry for Engineering
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• v.3 no.1
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• pp.88-99
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• 1992

For the development of semiconducting photoelectrode to be more stable and efficient in the process of photoelectrolysis of the water, pure titanium rods were oxidized by anodic oxidation, furance oxidation and flame oxidation and used as electrodes. The Indium islands were formed by electrodeposition of "In" thin film on $TiO_2$ and Ti by electrodeposition. Also $A1_2O_3$ and NiO islands were coated on Ti by the electron-beam evaporation technique. The maximum photoelectrochemical conversion efficiency(${\eta}$) was 0.98% for flame oxidized electrode($1200^{\circ}C$ for 2min in air). Anodically oxidized electrodes have photoelectrochemical conversion efficiency of 0.14%. Furnace oxidized electrode($800^{\circ}C$ for 10min in air) has 0.57% of photoelectrochemical efficiency and shows a band-gap energy of about 2.9eV. The $In_2O_3$ coated $TiO_2$ exhibits 0.8% of photoelectrochemical efficiency but much higher value of ${\eta}$ was obtained with the Increase of applied blas voltage. However, $Al_2O_3$ or NiO coated $TiO_2$ shows much low value of ${\eta}$. The efficiency was dependent on the presence of the metallic interstitial compound $TiO_{0+x}$(x<0.33) at the metal-semiconductor interface and the thickness of the suboxide layer and the external rutile scale.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Applied Chemistry for Engineering
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• v.8 no.6
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• pp.1022-1028
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• 1997

This work was performed to study the characteristics of electrochemical intercalation reactions occurring at the interface between the organic electrolyte and tungsten trioxide thin film (thickness of $4000{\AA}$) prepared by e-beam evaporation method as cathodically coloring oxide with regard to the electrochromism by the intercalating reactions of the lithium cation in the 1M $LiClO_4/PC$ organic solution. The characteristics of electrochemical intercalation reactions were investigated by various DC electrochemical methods such as cathodic Tafel polarization test, multiple and the single sweep cyclic voltammetry and the coulomety titrations method. The surfaces of thin films were observed with the patterns of X ray diffraction after the coloring and bleaching reactions. In comparison with the previous results that $WO_3$ thin film intersely detached from the surface of electrode when the hydrogen cation was intercalated into $WO_3$ thin film in the o.1N $H_2SO_4$ aqueous solution, the intercalation reaction of lithium cation into $WO_3$ thin film in the 1M $LiClO_4/PC$ organic solution was shown that the stable bleaching and coloration was appeared within 1.0V of the applied overpotential. When the overpotential of electrochromic reaction for lithium cation in the 1M $LiClO_4/PC$ organic solution had been applied up to 1.5V, the accumulation phenomenon of lithium in amorphous $WO_3$ thin film layer occurred because the inserted lithium into amorphous $WO_3$ thin layer for coloring process was not fully removed from the thin layer to the electrolyte during bleaching process. It was found that there is a limitation of applied overpotential for coloring process by the reduction of the current densities of bleaching and coloration after few number of coloring and bleaching cycles.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.128-128
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• 2018

최근 디스플레이 기술은 보다 가볍고, 얇고, 선명한 스마트 형태로 발전되고 있다. 특히 스마트산업의 성장으로 터치스크린패널(Touch Screen Panel, TSP)을 사용하는 기술이 다양해짐에 따라 더 높은 감도와 해상도를 달성하기 위한 핵심기술이 필요한 실정이다. TSP는 저항막 방식, 정전용량 방식, 적외선 방식, 초음파 방식 등 다양한 방식이 있다. 그 중 정전용량방식 터치 패널 (Capacitive type touch panel, CTTP)은 다른 유형에 비해 빠른 반응속도 및 멀티 터치 기능 등의 이점을 가지고 있기 때문에 연구의 초점이 되고 있다. 이를 실현하기 위해서 CTTP은 가시광영역의 높은 투과율과 낮은 비저항을 필요로 하기 때문에 박막의 초 슬림화 및 고 결정화도가 선행되어야만 한다. CTTP에 사용되는 투명전극 소재 중에서 40%의 비중을 차지하고 있는 ITO박막은 내구성과 시인성이 좋으나 생산 비용이 비싸다는 단점이 있다. 한편, 반응성 스퍼터링은 기존에 단일 소결체를 사용한 DC마그네트론 스퍼터링법보다 높은 증착률과 낮은 생산 비용으로 초박막을 만들 수 있다는 장점을 가진다. 본 실험에서는 In/Sn (2wt%) 금속 합금 타깃을 사용한 반응성 스퍼터링법을 이용하여 기판 온도 (RT 및 $140^{\circ}C$)에서 두께 30 nm의 In-Sn-O (ITO)박막을 증착하고, 대기 중 $140^{\circ}C$ 온도에서 시간에 따라 열처리한 후 박막의 물성을 관찰하였다. 증착 중 기판 가열을 하지 않은 ITO 박막의 경우, 열처리 시간이 증가함에 따라 비저항은 감소하였고, 홀 이동도는 현저하게 증가하였으며 캐리어 밀도에서는 별다른 차이가 없었다. 이를 통해 비저항의 감소는 캐리어 농도보다는 결정화를 통한 이동도의 증가와 관련 있다는 것을 확인할 수 있었다. 열처리 시간에 따른 박막의 핵 생성 및 결정 성장은 투과 전자 현미경(TEM)으로 명확하게 확인하였으며, 완전 결정화 된 박막의 grain size는 300~500 nm로 확인되었다. 기판온도 $140^{\circ}C$에서 증착한 박막의 경우, 후 열처리를 하지 않은 상태에서도 이미 결정화 된 것을 확인할 수 있었으며, 후 열처리 시에도 grain size에는 큰 변화가 없었다. 이는 증착 중에 박막의 결정화가 이미 완결된 것으로 판단된다. 또한, RT에서 증착한 박막의 경우에는 후 열처리 초기에는 산소공공등과 같은 결함들의 농도가 감소하여 투과율이 증가하였으나 완전한 결정화가 일어난 후에는 투과율이 약간 감소한 것을 확인할 수 있었다. 이는 결정화 시 박막의 표면 조도가 증가하였고 이로 인해 빛의 산란이 증가하여 투과율이 감소한 것으로 판단된다. 이러한 결과로 반응성 스퍼터링 공정으로 제조한 ITO 초박막은 후열처리에 의한 완전한 결정화를 이룰 수 있으며, 이를 통해 얻은 낮은 비저항과 높은 투과율은 고품질 TSP에 적용될 가능성을 가진다고 판단된다.