• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.307.1-307.1
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• 2016

Amorphous zinc tin oxide (ZTO) thin films are being widely studied for a variety electronic applications such as the transparent conducting oxide (TCO) in the field of photoelectric elements and thin film transistors (TFTs). Thin film transistors (TFTs) with transparent amorphous oxide semiconductors (TAOS) represent a major advance in the field of thin film electronics. Examples of TAOS materials include zinc tin oxide (ZTO), indium gallium zinc oxide (IGZO), indium zinc oxide, and indium zinc tin oxide. Among them, ZTO has good optical and electrical properties (high transmittance and larger than 3eV band gap energy). Furthermore ZTO does not contain indium or gallium and is relatively inexpensive and non-toxic. In this study, ZTO thin films were formed by UHV RF magnetron co-sputter deposition on silicon substrates and sapphires. The films were deposited from ZnO and SnO2 target in an RF argon and oxygen plasma. The deposition condition of ZTO thin films were controlled by RF power and post anneal temperature using rapid thermal annealing (RTA). The deposited and annealed films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM), ultraviolet and visible light (UV-VIS) spectrophotometer.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.6-11
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• 2019

For a wider application of laser direct patterning, selective laser ablation of indium tin oxide (ITO) film on transparent oxide semiconductor (TOS) thin film was carried out using a diode-pumped Q-switched Nd:YVO₄ laser at a wavelength of 1064 nm. In case of the laser ablation of ITO on indium gallium zinc oxide (IGZO) film, both of ITO and IGZO films were fully etched for all the conditions of the laser beams even though IGZO monolayer was not ablated at the same laser beam condition. On the contrary, in case of the laser ablation of ITO on zinc oxide (ZnO) film, it was possible to etch ITO selectively with a slight damage on ZnO layer. The selective laser ablation is expected to be due to the different coefficient of thermal expansion (CTE) between ITO and ZnO.

• ETRI Journal
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• v.34 no.6
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• pp.966-969
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• 2012

From a practical viewpoint, the topic of electrical stability in oxide thin-film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium-gallium-zinc-oxide (IGZO)-TFTs have revealed that an IGZO-TFT with a larger Ga portion has stronger stability, which is closely related with the strong binding of O atoms, as determined from an X-ray photoelectron spectroscopy analysis.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.246-248
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• 1994

The Electrical properties of thin $SiO_2$ film by rapid thermal processing have been investigated and this film has been compared with thermal $SiO_2$ film by furnace. The RTO(rapid thermal oxide) film annealed in Ar ambient represent more superior properties than thermal $SiO_2$ film by furnace at breakdown field and leakage current. The RTO(rapid thermal oxide) film annealed in $NH_3$ ambient represent more inferior properties than thermal $SiO_2$ film by furnace at electrical properties, but the capacitance was improved 15-25% than the conventional oxide film.

• Journal of the Korean Institute of Gas
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• v.2 no.4
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• pp.34-41
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• 1998

To oxide film, $A1_2O_3,\;Ta_2O_5$ and $ZrO_2$, coated on stainless steel (SUS410, SUS304) and pure Fe using RF magnetron sputtering method, the corrosion resistance on oxide coatings was studied using electrochemical measurement. Also, the adherence between film and substarte was studied. The adherence index ( $\chi$ ) was determined by the measure of micro hardness test. In this paper, we know that oxide film coated on SUS304 have better corrosion resistance than that coated on SUS410. In oxide film, the difference of corrosion resistance due to crystal structure have not been showed. In evaluating defect area rate of ceramic coated materials, CPCD method can be used effectively. In the micro-hardness test, with $1{\mu}m$ thickness film, it has only one the value of $\chi$. Above $2{\mu}m$ thickness film, however, get another value of $\chi$ as the cracks in film. The oxide film adhere well on the mild materials such as pure steel than high intensity materials like stainless.

• Journal of the Korean institute of surface engineering
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• v.51 no.1
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• pp.1-10
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• 2018

Anodic oxidation treatment of metals is one of typical surface finishing methods which has been used for improving surface appearance, bioactivity, adhesion with paints and the resistances to corrosion and/or abrasion. This article provides fundamental principle, type and characteristics of the anodic oxidation treatment methods, including anodizing method and plasma electrolytic oxidation (PEO) method. The anodic oxidation can form thick oxide films on the metal surface by electrochemical reactions under the application of electric current and voltage between the working electrode and auxiliary electrode. The anodic oxide films are classified into two types of barrier type and porous type. The porous anodic oxide films include a porous anodizing film containing regular pores, nanotubes and PEO films containing irregular pores with different sizes and shapes. Thickness and defect density of the anodic oxide films are important factors which affect the corrosion resistance of metals. The anodic oxide film thickness is limited by how fast ions can migrate through the anodic oxide film. Defect density in the anodic oxide film is dependent upon alloying elements and second-phase particles in the alloys. In this article, the principle and mechanisms of formation and growth of anodic oxide films on metals are described.

• Journal of Electrical Engineering and Technology
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• v.2 no.3
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• pp.408-412
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• 2007

It is almost impossible to secure the reproductibility and stability of a commercial Thick-Film Metal Oxide Semiconductor Gas Sensor since it is very difficult to keep the consistency of the manufacturing environment. Thus it is widely known that the general Semiconductor-Oxide Gas Sensors are not appropriate for precise measurement systems. In this paper, the output characteristic analyzer of the various Thick-Film Metal Oxide Semiconductor Gas Sensors that are used to recognize the air quality within an automobile are proposed and examined. The analyzed output characters in a normal air chamber are grouped by sensor ranks and used to fill out the characteristic table of the Thick-Film Metal Oxide Semiconductor Gas Sensors. The characteristic table is used to determine the rank of the sensor that is equipped in the current air cleaner system of an automobile. The proposed air control system can also adapt the on-demand operation that recognizes the history of the passenger's manual-control.

• Korean Journal of Materials Research
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• v.30 no.9
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• pp.441-446
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• 2020

Synthesizing nanostructured thin films of oxide semiconductors is a promising approach to fabricate highly efficient photoelectrodes for hydrogen production via photoelectrochemical (PEC) water splitting. In this work, we investigate the feasibility as an efficient photoanode for PEC water oxidation of zinc oxide (ZnO) nanostructured thin films synthesized via a simple method combined with sputtering Zn metallic films on a fluorine-doped tin oxide (FTO) coated glass substrate and subsequent thermal oxidation of the sputtered Zn metallic films in dry air. Characterization of the structural, optical, and PEC properties of the ZnO nanostructured thin film synthesized at varying Zn sputtering powers reveals that we can obtain an optimum ZnO nanostructured thin film as PEC photoanode at a sputtering power of 40 W. The photocurrent density and optimal photocurrent conversion efficiency for the optimum ZnO nanostructured thin film photoanode are found to be 0.1 mA/㎠ and 0.51 %, respectively, at a potential of 0.72 V vs. RHE. Our results illustrate that the ZnO nanostructured thin film has promising potential as an efficient photoanode for PEC water splitting.

• Journal of Biomedical Engineering Research
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• v.14 no.4
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• pp.333-340
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• 1993

The high biocompatibility of titanium is connected with the high corrosion resistance of the surface oxide, its high dielectric constant, and some other specific biochemical properties of the oxide. The corrosion resistance of titanium can be improved with the formation of passive film by anodic oxidation. In other to characterize the titantium oxlde film formed by anodic oxidation, titanium plates were anodized in 0.5M $H_3SO_4$ electrolyte at voltages between 5V and 100v. The oxide film was examined by an X-Ray Diffractometer(XRD) and a Scanning Electron Microscope(SEM). In addition, the corrosion resistance of oxide film was tested by dipping in physiological NaCl,5% HCI,5% $H_3PO_4$ and its biocompatability was evaluated by the fibroblast-like cell culture. The results obtained are as follows : 1. The thickness of surface oxide and micropore are increased with the increase of electrode potential and formed deeply along the grain boundary. 2. The solubilities of titanium in electrolyte solution shows that the anodized titanium has more corrosion resistance than the untreated pure titanium. 3. The biocomatibility of anodized titanium is superior to untreated pure titanium.

• International journal of advanced smart convergence
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• v.1 no.1
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• pp.61-64
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• 2012

The ultraviolet and visible light responsive properties of the amorphous indium gallium zinc oxide thin film transistor have been investigated. Amorphous indium gallium zinc oxide (a-IGZO) thin film transistor operate in the enhancement mode with saturation mobility of $6.99cm^2/Vs$, threshold voltage of 13.5 V, subthreshold slope of 1.58 V/dec and an on/off current ratio of $2.45{\times}10^8$. The transistor was subsequently characterized in respect of visible light and UV illuminations in order to investigate its potential for possible use as a detector. The performance of the transistor is indicates a high-photosensitivity in the off-state with a ratio of photocurrent to dark current of $5.74{\times}10^2$. The obtained results reveal that the amorphous indium gallium zinc oxide thin film transistor can be used to fabricate UV photodetector operating in the 366 nm.