• Resources Recycling
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• v.11 no.1
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• pp.3-8
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• 2002

In order to make the high purity Mn$_3$O$_4$powder for the raw material of soft ferrite, Mn is extracted from the dust and the extracted solution is refined. The dust is generated in producing a medium-low carbon ferromanganese and contains 90% Mn$_3$O$_4$. Mn$_3$O$_4$in the dust was reduced into MnO by roasting with charcoal. Injection of the 180g/L of the reduced dust into 4N HCI solution increased pH of the leaching solution higher than 5 and then a ferric hydroxide was precipitated. Because the ferric hydroxide co-precipitates with Si ion etc, Fe and Si ion was removed from the solution and the about 10% Mn solution was obtained. The solution was diluted with water to Mn-15000 ppm and $NH_4$F was injected into the diluted solution at $70^{\circ}C$ to the F-3000 ppm. As a result, Ca ion is precipitated as $CaF_2$and the residual concentration of Ca was 14 ppm. Injection of the equivalent (NH$1.5M_4$)$_2$$CO_3$solution as 2 L/min at $25^{\circ}C$ into the above solution precipitated a fine and high purity $MnCO_3$powder. The deposition was filtrated and roasted at $1000^{\circ}C$ for 2 hours. As a result, $MnCO_3$powder is converted into $Mn_3$$O_4$powder and it had $8.2\mu$m of median size. The final production is above 99% $Mn_3$$O_4$powder and it satisfied the requirement of high purity $Mn_3$$O_4$powder for a raw material of soft ferrite.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.634-640
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• 1998

A well- shaped trench was investigated in view of the defect distribution along trench sidewall and bottom using high resolution transmission electron microscopy. The trench was formed by HBr plasma and additive gases in magnetically enhanced reactive ion etching system. Adding $0_2$ and other additive gases into HBr plasma makes it possible to eliminate sidewall undercut and lower surface roughness by forming the passivation layer of lateral etching, resulted in the well filled trench with oxide and polysilicon by subsequent deposition. The passivation layer of lateral etching was mainly composed of $SiO_xF_y$ $SiO_xBr_y$ confirmed by chemical analysis. It also affects the generation and distribution of lattice defects. Most of etch induced defects were found in the edge region of the trench bottom within the depth of 10$\AA$. They are generally decreased with the thickness of residue layer and almost disappeared below the uni¬formly thick residue layer. While the formation of crystalline defects in silicon substrate mainly depends on the incident angle and energy of etch species, the region of surface defects on the thickness of residue layer formed during trench etching.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.62-68
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• 2000

Ultra thin TiN films (50∼700nm thickness) were deposited on AISI 304 stainless steel substrates using a reactive DC magnetron sputtering deposition process to investigate their wear and friction properties. Dry sliding wear tests of the films were carried out against hardened steel and alumina counterparts using a pin-on-disk type wear tester at room temperature. Variation of friction coefficient was measured as a function of film thickness, load, sliding speed and roughness of the substrate. Worn surfaces of the film were examined by a scanning electron microscope. Wear resistance of the TiN film increased with the increase of the film thickness. The TiN film showed relatively high wear resistance in spite of its ultra thin thickness when it is mated by the steel counterpart, while it showed poor wear resistance with the alumina counterpart. The good wear resistance with the steel counterpart was explained by the formation of oxide layers on the film surface and sound interface character between the ultra thin film and the substrate.

• The Journal of Korean Academy of Prosthodontics
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• v.42 no.3
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• pp.307-326
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• 2004

Statement of problem. The long-term success of implants is the development of a stable direct connection between bone and implant surface, which must be structural and functional. To improve a direct implant fixation to the bone, various strategies have been developed focusing on the surface of materials. Among them, altering the surface properties can modify cellular responses such as cell adhesion, cell motility and bone deposition. Purpose. This study was to evaluate the cellular behaviors on the surface-modified titanium by morphological observation, cellular proliferation and differentiation. Material and methods. Specimens were divided into five groups, depending on their surface treatment: electropolishing(EP) anoclizing(AN), machining(MA), blasting with hydroxyapatite particle(RBM) and electrical discharge machining(EDM). Physicochemical properties and microstructures of the specimens were examined and the responses of osteoblast-like cells were investigated. The microtopography of specimens was observed by scanning electron microscopy(SEM). Surface roughness was measured by a three-dimensional roughness measuring system. The microstructure was analyzed by X-ray diffractometer(XRD) and scanning auger electron microscopy(AES). To evaluate cellular responses to modified titanium surfaces, osteoblasts isolated from neonatal rat were cultured. The cellular morphology and total protein amounts of osteoblast-like cell were taken as the marker for cellular proliferation, while the expression of alkaline phosphatase was used as the early differentiation marker for osteoblast. In addition, the type I collagen production was determined to be a reliable indicator of bone matrix synthesis. Results. 1. Each prepared specimen showed specific microtopography at SEM examination. The RBM group had a rough and irregular pattern with reticulated appearance. The EDM-treated surface had evident cracks and was heterogeneous consisting of broad sheet or plate with smooth edges and clusters of small grains, deep pores or craters. 2. Surface roughness values were, from the lowest to the highest, electropolished group, anodized group, machined group, RBM group and EDM group. 3. All groups showed amorphous structures. Especially anodized group was found to have increased surface oxide thickness and EDM group had titaniumcarbide(TiC) structure. 4. Cells on electropolished, anodized and machined surfaces developed flattened cell shape and cells on RBM appeared spherical and EDM showed both. After 14 days, the cells cultured from all groups were formed to be confluent and exhibited multilayer proliferation, often overlapped or stratified. 5. Total protein amounts were formed to be quite similar among all the group at 48 hours. At 14 days, the electropolished group and the anodized group induced more total protein amount than the RBM group(P<.05). 6. There was no significant difference among five groups for alkaline phosphatase(ALP) activity at 48 hours. The AN group showed significantly higher ALP activity than any other groups at 14 days(P<.05). 7. All the groups showed similar collagen synthesis except the EDM group. The amount of collagen on the electropolished and anodized surfaces were higher than that on the EDM surface(P<.05).

• Journal of the Korea Convergence Society
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• v.8 no.5
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• pp.161-167
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• 2017

We have fabricated and characterized $32{\times}32$ photonic quantum ring (PQR) laser arrays uniformly operable with $0.98{\mu}A$ per ring at room temperature. The typical threshold current, threshold current density, and threshold voltage are 20 mA, $0.068A/cm^2$, and 1.38 V. The top surface emitting PQR array contains GaAs multiquantum well active regions and exhibits uniform characteristics for a chip of $1.65{\times}1.65mm^2$. The peak power wavelength is $858.8{\pm}0.35nm$, the relative intensity is $0.3{\pm}0.2$, and the linewidth is $0.2{\pm}0.07nm$. We also report the wavelength division multiplexing system experiment using angle-dependent blue shift characteristics of this laser array. This photonic quantum ring laser has angle-dependent multiple-wavelength radial emission characteristics over about 10 nm tuning range generated from array devices. The array exhibits a free space detection as far as 6 m with a function of the distance.

• Environmental Sciences Bulletin of The Korean Environmental Sciences Society
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• v.4 no.3
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• pp.173-183
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• 2000

This study measured the zeta potential of both latex colloidal particles with carboxylate surface groups and glass beads (collectors) with silanol surface group employing various solution with different chemical characteristics. The results have been compared with the surface chemistry theory. The zeta potential of the particle and collector increased with increasing pH up to 5.0 regardless of the solution chemistry. For a monovalent electrolyte solution(sodium chloride solution) the zeta potential steadily increased until the pH reached 9.5. In contrast, little change in zeta potential was made between 5.0 and 9.5 for a divalent electrolyte solution (sodium chloride solution) the zeta potential steadily increased until the pH reached 9.5. In contrast, little change in zeta potential was made between 5.0 and 9.5 for a divalent electrolyte solution (calcium chloride solution). In other words, the more the pH decreases, the larger the effect of neutral salts, such as NaCl and CaCl$_2$, have on the ζ-potential values. In this study, the PZPC(point of zero proton condition) of the particle and collector occurred below a pH of 3.1, H(sup)+ and OH(sup)- acted as a PDI (potential determining ion), and Na(sup)+ acted as an IDI(indifferent ion). The magnitude of the negative ζ-potential values of the particle and collector monotonically increased as the concentrations of Na(sup)+ or Ca(sup)2+([Na(sup)+] or [Ca(sup)2+]) decreased (the values of pNa or pCa increased). In the case of latex particles, the ζ-potential should aproach zero (isoelectric point; IEP) asymptotically as the pNa approaches zero, while in the case of calcium chloride electrolyte, ζ-potential reversal may be expected to occur around 3.16$\times$10(sup)-2MCaCl$_2$(pCa=1.5). pH, valance and ionic strength can be used in various ways to improve the water treatment efficiency by modifying the charge characteristics of the particle and collector. Predictive capability is far less certain when EDL(electrical double layer) repulsive forces exist between the particle and collector.

• Journal of the Korean Electrochemical Society
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• v.2 no.2
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• pp.75-80
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• 1999

Li-ion cells employ lithium transtion metal oxide as the cathode material and carbon as anode material. To manufacture Li-ion cell with higher capacity and better cycle life, the utilization of electrode materials should be as high as possible without lithium deposition onto the carbon surface during charging. A careful design of cell balance between cathode and anode materials as well as a proper charge method is a key factor to design Li-ion cell with long cycle life. In this study, we investigated the effect of cathode/anode weight ratio on the performance of $LiCoO_2/MPCF$ cell. First we evaluated the charge-discharge behaviours of half-cells. And cylindrical Li-ion cells were fabricated using graphitized MPCF anode and $LiCoO_2$ cathode. The voltage profiles for each half-cell in $LiCoO_2/MPCF$ cell were measured by using lithium metal as a reference electrode. Also, we evaluated the cyclic performance of $LiCoO_2/MPCF$ cells according to weight ratio. From the result of experiment $LiCoO_2$ cathode utilization was independent of weight ratio, but MPCF anode utilization was dependant on weight ratio. Also, the optimal weight ratio of $LiCoO_2/MPCF$ cell was found to be $2.0\~2.2$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.9
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• pp.536-542
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• 2018

Tin dioxide, $SnO_2$, is a well-known n-type semiconductor that shows change in resistance in the presence of gas molecules, such as $H_2$, CO, and $CO_2$. Considerable research has been done on $SnO_2$ semiconductors for gas sensor applications due to their noble property. The nanomaterials exhibit a high surface to volume ratio, which means it has an advantage in the sensing of gas molecules. In this study, SnO nanoplatelets were grown densely on Si substrates using a thermal CVD process. The SnO nanostructures grown by the vapor transport method were post annealed to a $SnO_2$ phase by thermal CVD in an oxygen atmosphere at $830^{\circ}C$ and $1030^{\circ}C$. The pressure of the furnace chamber was maintained at 4.2 Torr. The crystallographic properties of the post-annealed SnO nanostructures were investigated by Raman spectroscopy and XRD. The change in morphology was confirmed by scanning electron microscopy. As a result, the SnO nanostructures were transformed to a $SnO_2$ phase by a post-annealing process.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.202-202
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• 2012

유연성 투명 전도막은 현대 전자산업의 발전에 있어 필수적인 부품소재로서, 가시광선의 투과율이 80% 이상이고 면저항이 $100{\Omega}/sq.$ 전후이며 휘거나 접히고 나아가 두루마리의 형태로도 응용이 가능한 소재를 일컫는다. 이러한 유연성 투명 전도막은 차세대 정보디스플레이 산업 및 유비쿼터스 사회의 중심이 되는 유연성 디스플레이, 터치패널, 발광다이오드, 태양전지 등 매우 다양한 분야에 응용이 기대된다. 이러한 이유로 고 신뢰성 유연성 투명 전도막 개발기술은 차세대 산업에 있어서의 핵심기술로 인식되고 있다. 현재로서는 인듐 주석 산화물(indium tin oxide; ITO) 및 전도성 유기고분자를 사용하여 투명 전도막을 제조하고 있으나, ITO 박막의 경우 인듐 자원의 고갈로 인한 가격상승 및 기판과의 낮은 접착력, 열팽창계수의 차이로 인한 공정상의 문제, 산화물 특유의 취성으로 인한 유연소자로서의 내구성 저하 등의 문제가 제기되고 있다. 전도성 유기고분자의 경우는 낮은 전기전도도와 기계적강도, 유기용매 처리 등의 문제점이 지적되고 있다. 따라서 높은 전기전도도와 투광도 뿐만 아니라 유연성을 지니는 재료의 개발이 요구되고 있는 실정이다. 최근 이러한 재료로서 그래핀(graphene)과 탄소나노튜브(carbon nanotube; CNT)를 중심으로 하는 탄소나노재료가 주목받고 있으며 많은 연구가 활발히 진행되고 있다. 본 연구에서는 열화학기상증착법(thermal vapor deposition; TCVD)으로 합성된 그래핀 및 CNT를 이용하여 탄소나노재료 복합체 기반의 유연성 투명 전도막을 제작하고 그 특성을 평가하였다. 그래핀과 CNT합성을 위한 기판으로는 각각 300 nm 두께의 니켈과 1 nm 철이 증착된 실리콘 웨이퍼를 이용하였으며, 원료가스로는 메탄(CH4)과 아세틸렌(C2H2)등의 탄화수소가스를 이용하였다. 그래핀의 경우 원료가스의 유량, 합성온도, 냉각속도를 변경하여 대면적으로 두께균일도가 높은 그래핀을 합성하였으며, CNT의 경우 합성시간을 변수로 길이 제어합성을 도모하였다. 합성된 그래핀은 식각공정을, CNT는 스프레이 증착공정을 통해 고분자 기판(polyethylene terephthalate; PET) 위에 순차적으로 전사 및 증착하여 탄소나노재료 복합체 기반의 유연성 투명 전도막을 제작하였다. 제작된 탄소나노재료 복합체 기반의 유연성 투명 전도막은 물리적 과부하를 받았을 때 발생할 수 있는 유연성 투명 전도막의 구조적결함에 기인하는 전도성 저하를 보상하는 특징이 있어, 그래핀과 탄소나노튜브 각각으로 제조된 유연성 투명 전도막보다 물리적인 하중이 반복적으로 인가되었을 때 내구성이 향상되는 효과가 있다. 40% 스트레인을 반복적으로 인가하였을 때 그래핀 투명 전도막은 20 사이클 이후에 면저항이 $1-2{\Omega}/sq.$에서 $15{\Omega}/sq.$ 이상으로 급증한 반면 그래핀-CNT 복합체 투명 전도막은 30사이클까지 $1-2{\Omega}/sq.$ 정도의 면저항을 유지하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.