• 진공이야기
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• 제5권2호
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• pp.10-17
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• 2018

Chalcogenide and oxide heterostructures have been studied as a next-generation electronic materials, due to their interesting electronic properties, such as direct bandgap semiconductor, ferroelectricity, ferromagnetism, superconductivity, charge-density waves, and metal-insulator transition, and their modification near heterointerfaces, so called, electronic reconstruction. An angle-resolved photoemission spectroscopy (ARPES) is a powerful technique to unveil such novel electronic phases in detail, especially combined with high quality thin film preparation methods, such as, molecular beam epitaxy and pulsed laser deposition. In this article, the recent ARPES results in chalcogenide and oxide thin films will be introduced.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.49.2-49.2
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• 2010

Copper oxide films have been deposited on silicon substrates by direct current magnetron sputtering of Cu in O2 / Ar gas mixtures. The target oxidation occurring as a result of either adsorption or ion-plating of reactive gases to the target has a direct effect on the discharge current and the resulting composition of the deposited films. The kinetic model which relates the target oxidation to the discharge current was proposed, showing the one-to-one relationship between discharge current characteristics and film stoichiometry of the deposited films.

• 한국생산제조학회지
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• 제24권4호
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• pp.469-474
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• 2015

In ultrasonic spray pyrolysis deposition, a precursor solution is evaporated by an ultrasonic atomizer, then gas-carried into a furnace where the solute is separated from the water vapor. After condensation, polymerization, and nucleation, the solute oxide forms a thin film. To improve the deposition efficiency, the ultrasonic atomizer was studied to optimize the evaporated gas flow. The vat cover was redesigned, using three versions with different inlet factors being tested through a computational fluid dynamic analysis as well as a water evaporation experiment. The atomization rate with a hemispherical cover with a $30^{\circ}$ inlet was found to be 2.4 times higher than that with the original. This improvement was verified with fluorine-doped tin oxide spray pyrolysis deposition. The film obtained with the modified vat cover was 2.4 times thicker than that obtained with the original vat cover.

• Carbon letters
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• 제21권
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• pp.16-22
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• 2017

Cobalt was electrodeposited onto chemical vapor deposition (CVD) graphene/Si/$SiO_2$ substrates, during different time intervals, using an electrolyte solution containing a low concentration of cobalt sulfate. The intention was to investigate the details of the deposition process (and the dissolution process) and the resulting magnetic properties of the Co deposits on graphene. During and after electrodeposition, in-situ magnetic measurements were performed using an (AGFM). These were followed by ex situ morphological analysis of the samples with ${\Delta}t_{DEP}$ 30 and 100 s by atomic force microscopy in the non-contact mode on pristine CVD graphene/$SiO_2$/Si. We demonstrate that it is possible to electrodeposit Co onto graphene, and that in-situ magnetic measurements can also help in understanding details of the deposition process itself. The results show that the Co deposits are ferromagnetic with decreasing coercivity ($H_C$) and demonstrate increasing magnetization on saturation ($M_{SAT}$) and electric signal proportional to remanence ($M_r$), as a function of the amount of the electrodeposited Co. It was also found that, after the end of the dissolution process, a certain amount of cobalt remains on the graphene in oxide form (this was confirmed by X-ray photoelectron spectroscopy), as suggested by the magnetic measurements. This oxide tends to exhibit a limited asymptotic amount when cycling through the deposition/dissolution process for increasing deposition times, possibly indicating that the oxidation process is similar to the graphene surface chemistry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.128-128
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• 2009

The effect of seed layer on the preparation of tin oxide thin film by ALD using tetrakis(ethylmethylamino) tin precursor was examined. The average growth rate of tin oxide film is about 1.4 A/cycle from $50^{\circ}C$ to $150^{\circ}C$. The rate rapidly decreases at the substrate temperature at $200^{\circ}C$. The seed effect was not observed in crystal growth of thin oxide. However, the crystalline growth of seed material in tin oxide was detected by thermal annealing. ALD-grown seeded tin oxide thin film after thermal annealed was characterized by ellipsometry, XRD, AFM and XPS.

• Journal of Electrochemical Science and Technology
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• 제3권4호
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• pp.178-184
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• 2012

A porous nickel (P-Ni) substrate was prepared by selective leaching of zinc from pressed pellets containing powders of Ni & Zn in 4 M NaOH solution. Anodic deposition of manganese oxide onto the porous Ni substrate ($MnO_x$/P-Ni) formed nano-flakes of manganese oxide layers as revealed in SEM studies. Pseudocapacitance of this oxide electrode was evaluated by cyclic voltammetry (CV) and chronopotentiometry (CHP) in 2 M NaOH solution. The specific capacitance of the Mn oxide electrode was as high as 1515 F $g^{-1}$, which was ten times higher than Mn oxide deposited on a flat Ni-ribbon. 80% of capacity was retained after 200 charge/discharge cycles. The system showed no loss of activity in dry form over period of days. The impedance studies indicated highly conducting $MnO_x$/P-Ni substance and the obtained specific capacitance from impedance data showed good agreement with the charge/discharge measurements.

• 한국표면공학회지
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• 제23권2호
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• pp.18-23
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• 1990

Thin films of tin oxide were prepared by chemical vapor deposition (C.V>D) using the hydrolysis reaction of SnCl4, Deposition rate increased with the increase of temperature up to $500^{\circ}C$and then decreased at $700^{\circ}C$, Deposition rate with SnCl4 partial pressure showed RidealEley behavir. It was found that SnO2 thin film deposited at the temperature above $400^{\circ}C$ had(110) and (301) plane preferred orientation with crystallinity of rutite structure. Electrical resisvity of SnO2 thin film decreased with increase increase of deposition temperature and showed minimum value of 10-3 ohm at $500^{\circ}C$and than largely increased increased with further increase of deposition temperture.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.259-259
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• 2011

염료감응형 태양전지(Dye-Sensitized Solar Cells:DSSC)는 환경 친화적이며, 저가의 공정에 대한 가능성으로 기존의 고가의 결정질 실리콘 태양전지의 경제적인 대안으로 각광을 받고 있다. 최근 염료감응형 태양전지는 투명 전도성 산화막(Transparent Conducting Oxide : TCO)으로 사용되는 Fluorine Tin Oxide (FTO)가 증착된 유리기판 위에 주로 제작된다. FTO는 낮은 비저항과 가시광선 영역에서 높은 투과도를 가지는 우수한 전기-광학적 특성을 갖지만, 비교적 공정이 까다로운 Chemical Vapor Deposition (CVD)법으로 제조하며, 전체 공정비용의 60%를 차지하는 높은 생산단가로 인해 현재 FTO를 대체할 재료개발 연구가 활발히 진행되고 있다. 그 중 ZnO (Zinc Oxide)는 우수한 전기-광학적 특성과 비교적 저렴한 가격으로 새로운 TCO로써 주목받고 있다. ZnO는 넓은 energy band gap (3.4 [eV])의 육방정계 울자이트(hexagonal wurtzite) 결정 구조를 가지는II-VI족 n형 반도체 물질이며, III족 금속원소인 Al, Ga 및 In 등의 불순물을 첨가하면 TCO로서 우수한 전기-광학적 특성과 안정성을 나타낸다. 이들 물질중 $Zn^{2+}$ (0.060 nm)의 이온반경과 유사한 $Ga^{2+}$0.062 nm) 이온이 ZnO의 격자반경을 최소화 시킬 수 있다는 장점으로 최근 주목 받고 있다. 하지만 Ga-doped ZnO (GZO)의 경우 DSC에 사용되는 루테늄 계열의 산성 염료 하에 장시간 두면 표면이 파괴되는 문제가 발생하며, $TiO_2$ paste를 Printing 후 열처리하는 과정에서도 박막의 파괴가 발생할 수 있다. 이를 방지하기 위해 $TiO_2$ Blocking Layer를 GZO 투명전극 위에 증착하였다. 또한, $TiO_2$ Blocking Layer를 적용한 GZO 박막을 전면전극으로 이용하여 DSC를 제작하여 효율을 확인하였다. 2wt%의 $Ga_2O_3$가 도핑된 ZnO 박막은 20mTorr 400$^{\circ}C$에서 Pulsed Laser Deposition (PLD)에 의해 성장되었고, $TiO_2$박막은 Ti 금속을 타겟으로 이용하여 30mTorr 400$^{\circ}C$에서 증착되었다. Scanning electron microscopy (FE-SEM)을 이용한 박막 분석 결과 $TiO_2$가 증착된 GZO 박막의 경우 표면 파괴가 일어나지 않았다. Solar Simulator을 이용하여 I-V특성 측정결과 상용 FTO를 사용한 DSC 수준의 효율을 나타내었다. 이에 따라 Pulsed Laser Deposition을 이용해 제작된 GZO 기판은 $TiO_2$ Blocking Layer를 이용하여 표면 파괴를 방지할 수 있었으며, 이는 향후 염료감응형 태양전지의 투명전극에 적용 가능 할 것으로 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.434-435
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• 2012

Plasma enhanced chemical vapor deposition (PECVD) silicon dioxide thin films have many applications in semiconductor manufacturing such as inter-level dielectric and gate dielectric metal oxide semiconductor field effect transistors (MOSFETs). Fundamental chemical reaction for the formation of SiO2 includes SiH4 and O2, but mixture of SiH4 and N2O is preferable because of lower hydrogen concentration in the deposited film [1]. It is also known that binding energy of N-N is higher than that of N-O, so the particle generation by molecular reaction can be reduced by reducing reactive nitrogen during the deposition process. However, nitrous oxide (N2O) gives rise to nitric oxide (NO) on reaction with oxygen atoms, which in turn reacts with ozone. NO became a greenhouse gas which is naturally occurred regulating of stratospheric ozone. In fact, it takes global warming effect about 300 times higher than carbon dioxide (CO2). Industries regard that N2O is inevitable for their device fabrication; however, it is worthwhile to develop a marginable nitrous oxide free process for university lab classes considering educational and environmental purpose. In this paper, we developed environmental friendly and material cost efficient SiO2 deposition process by substituting N2O with O2 targeting university hands-on laboratory course. Experiment was performed by two level statistical design of experiment (DOE) with three process parameters including RF power, susceptor temperature, and oxygen gas flow. Responses of interests to optimize the process were deposition rate, film uniformity, surface roughness, and electrical dielectric property. We observed some power like particle formation on wafer in some experiment, and we postulate that the thermal and electrical energy to dissociate gas molecule was relatively lower than other runs. However, we were able to find a marginable process region with less than 3% uniformity requirement in our process optimization goal. Surface roughness measured by atomic force microscopy (AFM) presented some evidence of the agglomeration of silane related particles, and the result was still satisfactory for the purpose of this research. This newly developed SiO2 deposition process is currently under verification with repeated experimental run on 4 inches wafer, and it will be adopted to Semiconductor Material and Process course offered in the Department of Electronic Engineering at Myongji University from spring semester in 2012.

• 한국결정성장학회지
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• 제17권1호
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• pp.18-22
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• 2007

Carbon nanofilaments were deposited on silicon oxide substrate by thermal chemical vapor deposition method. We used $Fe(CO)_5$ as the catalyst for the carbon nanofilaments formation. Around $800^{\circ}C$ substrate temperature, the formation density of carbon nanofilaments could be enhanced by the vacuum sublimation technique of $Fe(CO)_5$, compared with the conventional spin coating technique. Finally, we could achieve the low temperature, as low as $350^{\circ}C$, formation of carbon nanofilaments using the sublimated Fe-complex nanograins with thermal chemical vapor deposition. Detailed morphologies and characteristics of the carbon nanofilaments were investigated. Based on these results, the role of the vacuum sublimation technique for the low temperature deposition of carbon nanofilaments was discussed.