• Title/Summary/Keyword: Oxide Deposition

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Control of Deposition Parameters in ITO Films: Figure of Merit

  • Kim, H.H.;Park, C.H.;M.J. Cho;K.J. Lim;J.H. Shin;Park, K.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.398-401
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    • 2001
  • Indium tin oxide films were deposited on unheated PET substrates by DC reactive magnetron sputtering of In-Sn (90-10 wt%) metallic alloy target. Electrical and optical properties of as-deposited films were systematically studied by control of the deposition parameters such as working pressure, DC power, and oxygen partial pressure. The figures of merit are important factors that summarize briefly the relationship between electrical and optical properties of transparent conducting films. The formulae of T/R$\sub$sh/ and T$\^$10//R$\sub$sh/ are expressed as a function of transmittance and sheet resistance. The best values of those figures of merit were approximately 38.6 and 8.95 (x10$\^$-3/Ω$\^$-1/), respectively.

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The Organic-Inorganic Hybrid Encapsulation Layer of Aluminium Oxide and F-Alucone for Organic Light Emitting Diodes

  • Gwon, Deok-Hyeon;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.374-374
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    • 2012
  • Nowadays, Active Matrix Organic Light-Emitting Diodes (AM-OLEDs) are the superior display device due to their vivid full color, perfect video capability, light weight, low driving power, and potential flexibility. One of the advantages of AM-OLED over Liquid Crystal Display (LCD) lies in its flexibility. The potential flexibility of AM-OLED is not fully explored due to its sensitivity to moisture and oxygen which are readily present in atmosphere, and there are no flexible encapsulation layers available to protect these. Therefore, we come up with a new concept of Inorganic-Organic hybrid thin film as the encapsulation layer. Our Inorganic layer is Al2O3 and Organic layer is F-Alucone. We deposited these layers in vacuum state using Atomic Layer Deposition (ALD) and Molecular Layer Deposition (MLD) techniques. We found the results are comparable to commercial requirement of 10-6 g/m2 day for Water Vapor Transmission Rate (WVTR). Using ALD and MLD, we can control the exact thin film thickness and fabricate more dense films than chemical or physical vapor deposition methods. Moreover, this hybrid encapsulation layer potentially has both the flexibility of organic layers and superior protection properties of inorganic layer.

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Spray Pyrolysis Deposition of Zinc Oxide Thin Films by ZnO Buffer Layer (ZnO buffer 층을 이용한 초음파 분무열분해 ZnO 박막 증착)

  • Han, In Sub;Park, Il-Kyu
    • Korean Journal of Materials Research
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    • v.27 no.8
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    • pp.403-408
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    • 2017
  • We investigated the effect of ZnO buffer layer on the formation of ZnO thin film by ultrasonic assisted spray pyrolysis deposition. ZnO buffer layer was formed by wet solution method, which was repeated several times. Structural and optical properties of the ZnO thin films deposited on the ZnO buffer layers with various cycles and at various temperatures were investigated by field-emission scanning electron microscopy, X-ray diffraction, and photoluminescence spectrum analysis. The structural investigations showed that three-dimensional island shaped ZnO was formed on the bare Si substrate without buffer layers, while two-dimensional ZnO thin film was deposited on the ZnO buffer layers. In addition, structural and optical investigations showed that the crystalline quality of ZnO thin film was improved by introducing the buffer layers. This improvement was attributed to the modulation of the surface energy of the Si surface by the ZnO buffer layer, which finally resulted in a modification of the growth mode from three to two-dimensional.

Fabrication of NiS Thin Films as Counter Electrodes for Dye-Sensitized Solar Cells using Atomic Layer Deposition

  • Jeong, Jin-Won;Kim, Eun-Taek;Park, Su-Yong;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.276.2-276.2
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    • 2016
  • Dye-sensitized solar cells (DSCs) are promising candidates for light-to-energy conversion devices due to their low-cost, easy fabrication and relative high conversion efficiency. An important component of DSCs is counter electrode (CE) collect electrons from external circuit and reduct I3- to I-. The conventional CEs are thermally decomposed Pt on fluorine-doped tin oxide (FTO) glass substrates, which have shown excellent performance and stability. However, Pt is not suitable in terms of cost effect. In this report, we demonstrated that nickel sulfide thin films by atomic layer deposition (ALD)-using Nickel(1-dimethylamino-2-methyl-2-butanolate)2 and hydrogen sulfide at low temperatures of $90-200^{\circ}C$-could be good CEs in DSCs. Notably, ALD allows the thin films to grow with good reproducibility, precise thickness control and excellent conformality at the angstrom or monolayer level. The nickel sulfide films were characterized using X-ray photoelectron spectroscopy, scanning electron microscopy, X-ray diffraction, hall measurements and cyclic voltammetry. The ALD grown nickel sulfide thin films showed high catalytic activity for the reduction of I3- to I- in DSC. The DSCs with the ALD-grown nickel sulfide thin films as CEs showed the solar cell efficiency of 7.12% which is comparable to that of the DSC with conventional Pt coated counter electrode (7.63%).

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Plasma nitridation of atomic layer deposition-Al2O3 by NH3 in PECVD

  • Cha, Ham cho rom;Cho, Young Joon;Chang, Hyo Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.304.1-304.1
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    • 2016
  • We have investigated the effect of plasma nitridation of atomic layer deposited-Al2O3 films of monocrystalline Si wafers and the thermal properties of nitridated Al2O3 films. Nitridation was performed on Al2O3 to form aluminum oxynitride (AlON) using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition and it was conducted at temperature of $400^{\circ}C$ with various plasma power condition. After nitridation, we performed firing and forming gas annealing (FGA). For each step, we have observed the minority carrier lifetime and the implied Voc by using quasi-Steady-State photoconductance (QSSPC). We confirmed a tendency to increase the minority carrier lifetime and the implied Voc after the nitridation. On the other hand, the minority carrier lifetime and the implied Voc was decreased after Firing and forming gas annealing (FGA). To get more information, we studied properties of the plasma treated Al2O3 films by using Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS).

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The electrical and optical properties of transparent ZnO:Al films using HCl wet chemical etching (HCL 습식 에칭에 의한 ZnO:Al 투명전도막의 전기적, 광학적 특성)

  • Yoo, Jin-Su;Lee, Jeong-Chul;Kang, Ki-Hwan;Kim, Seok-Ki;Yoon, Kyung-Hoon;Song, Jin-Soo;Park, I-Jun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05b
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    • pp.62-65
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    • 2002
  • Transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Coming 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures $({\leq}300^{\circ}C)$, the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

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Al$_2$O$_3$ formation on Si by catalytic chemical vapour deposition

  • Ogita, Yoh-Ichiro;Shinshi Iehara;Toshiyuki Tomita
    • Electrical & Electronic Materials
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    • v.16 no.9
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    • pp.63.1-63
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    • 2003
  • Catalytic chemical vapor deposition (Cat-CVD) has been developed to deposit alumina(Al$_2$O$_3$) thin films on silicon (Si) crystal using N$_2$ bubbled tir-methyl aluminium [Al(CH$_3$)$_3$, TMA] and molecular oxygen (O$_2$) as source species and tungsten wires as a catalyzer. The catalyzer dissociated TMA at approximately 600$^{\circ}C$ The maximum deposition rate was 18 nm/min at a catalyzer temperature of 1000 and substrate temperature of 800$^{\circ}C$. Metal oxide semiconductor (MOS) diodes were fabricated using gates composed of 32.5-nm-thick alumina film deposited as a substrate temperature of 400oC. The capacitance measurements resulted in a relatively dielectric constant of 7, 4, fixed charge density of 1.74*10e12/$\textrm{cm}^2$, small hysteresis voltage of 0.12V, and very few interface trapping charge. The leakage current was 5.01*10e-7 A/$\textrm{cm}^2$ at a gate bias of 1V.

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Removal Efficiency of Microstickies by Flotation Process (부유부상 공정의 마이크로 스틱키 제거 효율에 관한 연구)

  • Park, Il;Lee, Hak-Lae
    • Journal of Korea Technical Association of The Pulp and Paper Industry
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    • v.37 no.3
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    • pp.1-8
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    • 2005
  • Increase in the utilization rate of recycled paper and closing level of papermaking system increased the problem associated with stickies that include decrease in process runnability and product quality. It is required to establish a process for removing the micro stickies to solve the problems associated with stickies. In this study, the application of flotation process as a method to remove micro stickies was examined. Model micro stickies (MMS) were prepared using microcrystalline cellulose (MCC) and pressure sensitive adhesives (PSA), and the influence of three nonionic surfactants on the removal efficiency of MMS from flotation process was examined. Also the effect of surfactants on the deposition of micro stickies that remaining in the papermaking wet end onto wire was examined. Removal efficiency of MMS by flotation was increased when the proportion of nonionic surfactant with propylene oxide (PO) type hydrophilic tail was increased and stock pH was 7. It was suggested that this nonionic surfactant minimized the increase of surface energy of hydrophobic MMS. The MMS with high hydrophobicity remaining in the papermaking system, however, would cause more serious deposition problems on papermaking wet end. Therefore, it is of great importance to increase the removal efficiency of MMS in flotation process for the prevention of papermaking system contamination caused by stickies deposition.

Study on Electrical Characteristics of Hafnium Silicate Films with Low Temperature O2 Annealing (저온 Osub2 어닐링 공정을 통한 HfSixOy의 전기적 특성 개선)

  • Lee, Jung-Chan;Kim, Kwang-Sook;Jeong, Seok-Won;Roh, Yong-Han
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.5
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    • pp.370-373
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    • 2011
  • We investigated the effects of low temperature ($500^{\circ}C$) $O_2$ annealing on the characteristics of hafnium silicate ($HfSi_xO_y$) films deposited on a Si substrate by atomic layer deposition (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics such as flat band voltage shift (${\Delta}V_{fb}$) by hysteresis without oxide capacitance reduction. We suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of $HfSi_xO_y$ films deposited by ALD.

Deposition Temperature and Annealing Temperature Dependent Structural and Electrical Properties of Ga-doped ZnO on SiC (퇴적 온도와 열처리에 따른 SiC에 퇴적된 Ga 도핑된 ZnO의 구조 및 전기적 특성)

  • Lee, Jung-Ho;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.2
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    • pp.121-124
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    • 2012
  • The characteristics of Ga-doped zinc oxide (GZO) thin films deposited at different deposition temperatures (TS~250 to $550^{\circ}C$) on 4H-SiC have been investigated. Structural and electrical properties of GZO thin film on n-type 4H-SiC(0001) were investigated by using x-ray diffraction(XRD), atomic force microscopy(AFM), Hall effect measurement, barrier height from I-V curve and Auger electron spectroscopy(AES). XRD $2\theta$ scan shows GZO thin film has preferential orientation with c-axis perpendicular to SiC substrate surface. The lowest resistivity ($\sim1.9{\times}10^{-4}{\Omega}cm$) was observed for the GZO thin film deposited at $400^{\circ}C$. As deposition temperature increases, barrier height between GZO and SiC was increased. Whereas, resistivity of GZO thin films as well as barrier height between GZO and SiC were increased after annealing process in air atmosphere. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ ions and oxygen vacancy may affect the electrical properties of GZO films on SiC.