• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.822-825
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• 2003

Indium tin oxide (ITO) thin films were deposited by RF-magnetron sputtering method and the crystallization behavior of the films with no external heating as a function of deposition time was examined. X-ray diffraction results indicated an amorphous state of the film when the deposition time is short about 10 min. When the deposition time was increased over 20 min development of crystallization of the films is observed.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.63-70
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• 1992

Deposition properties and film characteristics of Remote PECVD silicon dioxide were investigated. Using $N_{2}O/SiH_{4}$, the effects of changing the process conditions` the pressure, the substrate temperature, and the gas mixing ration, on the film quality were observed. A comparison of film qualites of the Remote PECVD SiO$_2$ with that of a Direct PECVD SiO$_2$ was made. The experimental results show that the Remote PECVD SiO$_2$ has better electrical, physical, and annealing properties than the Direct PECVD oxide.

• Journal of the Korean Ceramic Society
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• v.31 no.5
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• pp.477-484
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• 1994

The yttria stabilized zirconia(YSZ) thin films for solid oxide fuel cell (SOFC) were fabricated by an electrochemical vapor deposition(EVD) technique using YCl3+ZrCl4+H2O gas system. The YSZ films were deposited under reduced pressure at the temperature of 1000~120$0^{\circ}C$ on the porous alumina substrates. The deposition rate, chemical composition and growth morphology were investigated by SEM, XRD, EDS. The growth rates of the films obeyed a parabolic rate law, representing that the growing process is controlled by an electrochemical transport through the YSZ film. The Y2O3 content of the films was about 10 mol%, equal to the composition of metal chloride reactant gases, approximately. The YSZ films were highly dense, the growing features showed columnar structure and surface morphologies were changed with the EVD conditions.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.153-161
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• 1992

A plasma has been used in a high vaccum, cold wall reactor for low temperature deposition of C54 TiSi2 and for in-situ surface cleaning prior to silicide deposition. SiH4 and TiCl4 were used as the silicon and titanium sources, respectively. The deposited films had low resistivities in the range of 15~25 uohm-cm. The investigation of the experimental variables' effects on the growth of silicide and its concomitant silicon consumption revealed that and were the dominant species for silicide formation and the primary factors in silicon consumption were gas composition ratio and temperature. Increasing silane flow rate from 6 to 9 sccm decreased silicon consumption from 1500 A/min to less than 30 A/min. Furthermore, decreasing the temperature from 650 to $590^{\circ}C$ achieved blanket silicide deposition with no silicon consumption. A kinetic model of silicon consumption is proposed to understand the fundamental mechanism responsible for the dependence of silicon consumption on SiH4 flow rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.418-418
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• 2012

We fabricated a new type of hybrid film using molecular layer deposition (MLD). The MLD is a gas phase process analogous to atomic layer deposition (ALD) and also relies on a saturated surface reaction sequentially which results in the formation of a monolayer in each sequence. In the MLD process, polydiacetylene (PDA) layers were grown by repeated sequential surface reactions of titanium tetrachloride and 2,4-hexadiyne-1,6-diol with ultraviolet (UV) polymerization under a substrate temperature of $100^{\circ}C$. Ellipsometry analysis showed a self-limiting surface reaction process and linear growth of the hybrid films. Polymerization of the hybrid films was confirmed by infrared (IR) spectroscopy and UV-Vis spectroscopy. Composition of the films was confirmed by IR spectroscopy and X-ray photoelectron (XP) spectroscopy. The titanium oxide cross-linked polydiacetylene (TiOPDA) hybrid films exhibited good thermal and mechanical stabilities.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.756-759
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• 2009

We described the growth of undoped ZnO thin films and their optical properties changing with a various growth temperature. The undoped ZnO thin films were grown on $c-Al_2O_3$ substrates using pulsed laser deposition (PLD) at room temperature, 200, 400, and $600^{\circ}C$, respectively. Field emission microscopy (FE-SEM) measurements showed that the grain size of undoped ZnO thin films are increasing as a increase of growth temperature. In addition, we were investigated that the structural and optical properties of undoped ZnO thin films by x-ray diffraction (XRD) and photoluminescence (PL) studied. Also, we could confirmed that the exciton luminescence was strongly related to charge trap by grain boundary of the samples using micro-PL measurement.

• Applied Science and Convergence Technology
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• v.23 no.1
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• pp.40-43
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• 2014

We investigated the growth characteristics and interfacial properties of $HfO_2$ films deposited on Ge substrate through atomic layer deposited (ALD) by using an in-situ medium energy ion scattering analysis. The growth kinetics of $HfO_2$ grown on a $GeO_2/Ge$ substrate through ALD is similar to that grown on an $SiO_2/Si$ substrate. However, the incubation period of $HfO_2$ deposition on Ge is shorter than that on Si. The $HfO_2$ grown on the GeO/Ge substrate shows a significant diffusion of Hf atoms into the substrate interface and GeO volatilization after annealing at $700^{\circ}C$. The presence of low-quality Ge oxide or suboxide may degrade the electrical performance of device.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.151-154
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• 2005

In this paper, we present the enhanced performance of resistive RAM devices with multi-step deposited and annealed oxides. By using multi-step deposition and low temperature multi-step annealins, forming-free Re-RAM is achieved with lower operation voltages and larger resistive ratio than those of conventional Re-RAM with typical single deposited oxide.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.327-332
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• 1996

In this study, the effects of $WSi_x$, thickness and fluorine concentration in tungsten polycide gate structure on gate oxide were investigated. As $WSi_x$, thickness increases, gate oxide thickness increases with fluorine incorporation in gate oxide, and time-to-breakdown($T_{BD,50%}$) of oxide decreases. The stress change with $WSi_x$ thickness was also examined. But it is understood that the dominant factor to degrade gate oxide properties is not the stress but the fluorine, incorporated during $WSi_x$ deposition, diffused into $WSiO_2$ after heat treatment. In order to understand the effect of fluorine diffusion into oxidem fluorine ion implanted gates were compared. The thickness variation and $T_{BD,50%}$ of gate oxide is saturated over 600 $\AA$ thickness of $WSi_x$. The TEM and SIMS studies show the microstructure less than 600 $\AA$ thickness is dense and flat in surface. However, over 600$\AA$, the microstructure of $WSi_x$ is divided into two parts: upper porous phase with rugged surface and lower dense phase with smmoth interface. And this upper phase is transformed into oxygen rich crystalline phase after annealing, and the fluorine is captured in this layer. Therefore, the fluorine diffusion into the gate oxide is saturated.

• Proceedings of the Korean Magnestics Society Conference
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• 2004.12a
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• pp.156-157
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• 2004