• 한국안광학회지
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• 제15권4호
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• pp.313-317
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• 2010

목적: 이 연구 목적은 가공한 마그네슘 합금 AZ31 안경테를 plasma electrolytic oxidation(PEO) 표면 처리 후 표면특성에 대하여 조사하는 것이다. 방법: Plasma electrolytic oxidation(PEO) 표면 처리는 DC 전압을 변화시키며 처리하였고, 피막의 상 분석은 X-ray 회절기로 측정하였고, 형태학적 미세구조는 주사전자현미경로 관찰하였다. 그리고 피막층에 존재하는 원소의 농도를 에너지 분산 X-선 스펙트럼으로 조사하였다. 결과: PEO 처리시 전압이 증가함에 따라 XRD 측정 결과 MgO 피크가 증가하였으며, SEM 사진에서는 표면의 산화피막이 조밀하게 생기는 것을 확인 할 수 있었다. 그리고 EDS에서 성분의 변화도 일치함을 보여주었다. 결론: PEO 산화피막층은 전압이 증가 할수록 MgO 화합물의 형성이 점점 증가하기 때문에 산화막의 결정화가 진행되며, 65V에 60초 처리 시 표면상태, 접촉각, 내식성 시험에서 가장 좋은 결과를 보여 주었다.

• 한국표면공학회지
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• 제29권6호
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• pp.773-780
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• 1996

Silicon oxide films were prepared by using five kinds of organosilicon compound as gas sources without oxygen by rf plasma-enhanced CVD (PECVD). UV light was irradiated on a substrate vertically during deposition to enhance film oxidation and ablation of carbon contamination in a deposited films. Films prepared with UV irradiation contained less carbon than those prepared without UV irradiation. The oxidation of the films was improved by UN irradiation. The effect of UV irradiation was, however, not observed when the films were prepared with tetramethy lsilane (TMS) which contained no oxygen atom. Dissociated oxygen atoms from an organosilicon compound were excited in the plasma with UV irradiation around the substrate surface and affected the enhancement of film oxidation and ablation of carbon in the films.

• 한국표면공학회지
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• 제30권5호
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• pp.320-332
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• 1997

The development of colored surface on zinc coating by the oxidation of a melten alloy of zinc with a minor amount of oxygen-avid additive such as tianium has been studied. Using a galvanizing Zinc alloy containing 0.1 to 0.3wt%Ti, gold, purple or blue color was developed clearly and stably, depending upon the extent of oxidation, by air cooling after hot dipping in a bath at temperature of $550^{\circ}C$ to $600^{\circ}C$. The source of the color is light interference with surface oxide layer. THe final color depends on the thickness of the color depends on the thickness of $TiO_2$, played So compositing, temperature and time at elevated temperature after are all controlling variables. Since oxidation film such as $TiO_2$ played role of passivation film, the corrosion resistance in a colored galvanized steel sheet. It is also thought that surface oxide layer of $TiO_2$ inhibited dissolution of the coating layer.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.107-107
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• 2016

TiCrAlSiN films were developed in order to improve the high-temperature oxidation resistance, corrosion resistance, and mechanical properties of conventional TiN films that are widely used as hard films to protect and increase the lifetime and performance of cutting tools or die molds. In this study, a nano-multilayered TiAlCrSiN film was deposited by cathodic arc plasma deposition. It displayed relatively good oxidation resistance at $700-900^{\circ}C$, owing to the formation protective oxides of $Al_2O_3$, $Cr_2O_3$, and $SiO_2$, and semiprotective $TiO_2$. At $1000^{\circ}C$, the increased temperature led to the formation of the imperfect oxide scale that consisted primarily of the outer ($TiO_2$,$Al_2O_3$)-mixed scale and inner ($TiO_2$, $Al_2O_3$, $Cr_2O_3$)-mixed scale.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권1호
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• pp.51-54
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• 2009

Transparent Cuprous oxide film was deposited by rapid thermal oxidation (RTO) of Cu at $500^{\circ}C$/45s condition on textured single-crystal n-Si substrate to form $Cu_2O$/n-Si heterojunction photodiode. The Hall effect measurements for the $Cu_2O$ films showed a p-type conductivity. The photovoltaic and electrical properties of the junction at room temperature were investigated without any post-deposition annealing. I-V characteristics revealed that the junction has good rectifying properties. The C-V data showed abrupt junction and a built-in potential of 1 V. The photodiode showed good stability and high responsivity in the visible at three regions; 525 nm, 625-700 nm, and 750nm denoted as regions A, B, and C, respectively.

• 한국표면공학회지
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• 제32권1호
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• pp.43-48
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• 1999

Oxidation behavior of 304 and 316 stainless steels was studied. After solution heat treatment, specimens were polished up to 1$mu \textrm{m}$ using $Al_2O_3$ powder and then subjected to oxidation between $300^{\circ}C$ and 50$0^{\circ}C$ in dry air. TEM and EDS were used for analyzing the components and structure of oxide film. TEM analysis of oxide film revealed that thin amorphous Fe oxide ($Fe_2O_3$) was formed on the top of surface while polycrystalline (Cr, $Fe_2O_3$ was formed below the amorphous Fe oxide layer. The specimens oxidized at $500^{\circ}C$ showed that 316 stainless steel had higher oxidation resistance than 304 stainless steel. These results suggest that Mo component of 316 stainless steel suppresses the formation of Cr carbide which may result in a local Cr depleted area.

• 한국표면공학회지
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• 제27권3호
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• pp.123-133
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• 1994

Oxidation behavior of STS 304 and 430, produced by POSCO, Korea, was studied in order to study the surface defects formed during manufacturing processes. Oxidation experiments were carried out in a preheat-ed furnace at 850~$1, 250^{\circ}C$ in air and in a simulated coke oven gas(COG) atmosphere. The reaction products were examined by XRD, SEM and EDX on their surfaces and cross sections. Protective $Cr_2O_3$-primary oxide film was formed initially, but at critical point this film was broken and a duplex scale consisting of $Fe_2O_3$- and Fe$Cr_2O_4$- was formed. It was more severely attacked in a simulated COG atmosphere than in air, and STS 304 was superior to STS 430 in oxidation resistance.

• 한국전기전자재료학회논문지
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• 제18권8호
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• pp.708-713
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• 2005

An alumina membrane with nano-sized pore array by anodic oxidation using the thin film aluminum deposited on silicon wafer was fabricated. It Is important that the sample prepared by metal deposition method has a flat aluminum surface and a good adhesion between the silicon wafer and the thin film aluminum. The oxidation time was controlled by observation of current variation. While the oxalic acid with 0.2 M was used for low voltage anodization under 100 V, the chromic acid with 0.1 M was used for high voltage anodization over 100 V. The nano-sized pores with diameter of $60\~120$ nm was obtained by low voltage anodization of $40\~80$ V and those of $200\~300$ nm was obtained by high voltage anodization of $140\~200$ V. The pore widening process was employed for obtaining the one-channel with flat surface because the pores of the alumina membrane prepared by the fixed voltage method shows the structure of two-channel with rough surface. Finally, the sample was immersed to the phosphoric acid with 0.1 M concentration to etching the barrier layer.

• 대한전자공학회논문지
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• 제25권11호
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• pp.1329-1334
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• 1988

$NH_3-O_2$의 열반응에 의해 산화막을 성장시키는 새로운 방법을 소개하고, 기존의 건식산화방법을 이용한 $SiO_2$박막의 특성을 비교 설명하였다. $NH_3$의 유량에 따라서 박막의 성장비가 증가하고, 성장된 막의 구성성분이 건식산화때와 같음을 확인하였다. C-V특성곡선에서도 $Q_{OX}$와 $Q_{SS}$가 거의같았고 히스테리시스현상도 없었다. 또한 n-MOS트랜지스터를 제작하고 측정한 결과 $I_D$-$V_{DS}$특성곡선이 건식산화와 비교하여 우수함을 확인했다.

• 한국산학기술학회논문지
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• 제6권3호
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• pp.270-272
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• 2005

코발트 실리사이드는 낮은 전기 저항성 때문에 고효율 소자를 제조하는데 적합한 물질이다. 이는 전자소재가 소형화되면서 접촉저항과 혼합을 줄이기 위해 더욱 필요하게 되었다. 본 연구에서는 티타늄의 표면산화에 미치는 영향과, RTO 조건에서 온도에 따른 코발트 실리사이드 박막의 산화정도를 측정했다. 기질로서 p-형 실리콘웨이퍼를 사용하였고, 고속 열 가공을 통하여 박막을 가공하였다. 티타늄 층을 입혔을 때 산화충의 두께는 $500{\AA}$정도 성장하였다. 고속 열산화의 온도변화에 따라 산화막은 $550^{\circ}C\~700^{\circ}C$까지는 성장을 보였으나 $700^{\circ}C$이상에는 산화막 성장이 포화상태를 보였다.