• 한국재료학회지
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• 제12권3호
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• pp.200-204
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• 2002

We fabricated TMR devices which have double oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it by varying oxidation time for 5, 10, 20 sec. Subsequent sputtering of 13 $\AA$ - Al was performed and the matallic layer was oxidized for 120 sec. The electrical resistance changed from 700$\Omega$ to 2700$\Omega$ with increase of oxidation time, while variation of MR ratio was little spreading 27~31% which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3~1.5 eV, sufficient for tunnel barrier, and the barrier width(<16.2 $\AA$) was smaller than that of directly measured value by the tunneling electron microscopy. Our results may be caused by insufficient oxidation of Al precursor into $Al_2O_3$. However, double oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. We found that the external magnetic field to switch spin direction of ferromagnetic layer of pinned layer breaking ferro-antiferro exchange coupling was increased as bottom layer oxidation time increased. Our results imply that we were able to improve MR ratio and tune switching field by employing double oxidized tunnel barrier process.

• 한국재료학회지
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• 제12권9호
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• pp.718-723
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• 2002

$Ti_{1-x}$ $Al_{ x}$N thin films as barrier layer for memory devices application were deposited by reactive magnetron sputtering. The crystallinity, micro-structure, oxidation resistance and oxidation mechanism of films were investigated as a function of Al content. Lattice parameter and grain size of thin films were decreased with increasing the Al content Oxidation of the film with higher Al content is slow and then, total oxide thickness is thinner than that of lower Al content film. Oxide layer formed on the surface is AlTiNO layer. Oxidation of $Ti_{1-x}$ /$Al_{x}$ N barrier layer is diffusion limited process and thickness of oxide layer with oxidation time increased with a parabolic law. The activation energy of oxygen diffusion, Ea and diffusion coefficient, D of $Ti_{0.74}$ /X$0.74_{0.26}$N film is 2.1eV and $10^{-16}$ ~$10^{-15}$ $\textrm{cm}^2$/s, respectively. $_Ti{1-x}$ /$Al_{x}$ XN barrier layer showed good oxidation resistance.

• 한국안전학회지
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• 제11권4호
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• pp.54-63
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• 1996

We establish an expert system for the xylene oxidation reaction process of chemical plants using HAZOP(Hazard and Operability Studies). Our research focus Is only reduced to the cooling system of the total chemical plant due to lack of information. This expert system shows the priority of reasons for the system failure using confidence factor.

• Environmental Engineering Research
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• 제25권1호
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• pp.36-42
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• 2020

Fenton process is one of the most effective advanced oxidation processes for the removal of pollutants from wastewater. In this study, while ferrous iron was used in conventional Fenton process (CFP); nano-sized iron(II, III) oxide was experienced in modified Fenton process (MFP) as a new catalyst alternative. In order to enhance their oxidation efficiencies, both CFP and MFP were combined with ultrasonication at 53 kHz fixed frequency. Thus, the influences of both catalyst iron species and ultrasonication on color and chemical oxygen demand (COD) removals from synthetic textile wastewater including Maxilon Red GRL 200% dyestuff were investigated experimentally. While the COD and color removal rates were found as 72.5% and 69.7% via CFP; they were 87% and 75.8% by ultrasonicated CFP, respectively. The color and COD removals were 40.6% and 64.8% via MFP, and 49.9 and 73.1% by ultrasonicated MFP, respectively. Therefore, it was found that the simultaneously usage of ultrasonication with CFP and MFP was improved the COD and color removal efficiencies and oxidation rates even at lower H₂O₂ dosages, compared to individual CFP and MFP. Moreover, the color and COD removal kinetics were also modelled mathematically and compared in the study.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.354-357
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• 2002

Thermally grown gate oxide on 4H-SiC wafer was investigated. The oxide layers were grown at l150$^{\circ}C$ varying the carrier gas and post activation annealing conditions. Capacitance-Voltage(C-V) characteristic curves were obtained and compared using various gate electrode such as Al, Ni and poly-Si. The interface trap density can be reduced by using post oxidation annealing process in Ar atmosphere. All of the samples which were not performed a post oxidation annealing process show negative oxide effective charge. The negative oxide effective charges may come from oxygen radical. After the post oxidation annealing, the oxygen radicals fixed and the effective oxide charge become positive. The effective oxide charge is negative even in the annealed sample when we use poly silicon gate. Poly silicon layer was dope by POCl$_3$ process. The oxide layer may be affected by P ions in poly silicon layer due to the high temperature of the POCl$_3$ doping process.

• 한국분말재료학회지
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• 제28권2호
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• pp.91-96
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• 2021

Rare earth magnets with excellent magnetic properties are indispensable in the electric device, wind turbine, and e-mobility industries. The demand for the development of eco-friendly recycling techniques has increased to realize sustainable green technology, and the supply of rare earth resources, which are critical for the production of permanent magnets, are limited. Liquid metal extraction (LME), which is a type of pyrometallurgical recycling, is known to selectively extract the metal forms of rare earth elements. Although several studies have been carried out on the formation of intermetallic compounds and oxides, the effect of oxide formation on the extraction efficiency in the LME process remains unknown. In this study, microstructural and phase analyses are conducted to confirm the oxidation behavior of magnets pulverized by a jaw crusher. The LME process is performed with pulverized scrap, and extraction percentages are calculated to confirm the effect of the oxide phases on the extraction of Dy during the reaction. During the L ME process, Nd is completely extracted after 6 h, while Dy remains as Dy₂Fe₁₇ and Dy-oxide. Because the decomposition rate of Dy₂Fe₁₇ is faster than the reduction rate of Dy-oxide, the importance of controlling Dy-oxide on Dy extraction is confirmed.

• Environmental Analysis Health and Toxicology
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• 제14권3호
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• pp.121-126
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• 1999

The present paper describes a study of the photochemical kinetics and its oxidation mechanism of DBT. The photolysis of DBT in aqueous solution media have shown to have significant oxidation activities for the photolytic desulfurization of DBT. The oxidation effect was more pronounced in 4 % NaCl solution. A mechanism was proposed that the desulfurization process arise from the substution of sulfur by the hydroxyl radicals in different aqueous medium.

• 기술사
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• 제33권6호
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• pp.16-23
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• 2000

Anodizing processes is the conversion of the aluminum surface to aluminum oxide while the part is the anode in an electrolytic cell. The object of the anodizing was increased corrosion resistant, paint adhesion and was provided unique, decorative colors. Many electrolytes, under different conditions, have been used for the anodic oxidation of alumminum and its alloys. This paper deals with the procedures used in the anodic oxidation of aluminum and its alloys, the nature and properties of the oxide films, their uses and anodizing equipment and process control.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 추계학술대회 논문집
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• pp.7-9
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• 2007

Thin films of CrAlSiN were deposited on SKD11 tool steel substrate using Cr and AlSi cathodes by a cathodic arc plasma deposition system. The influence of process parameters on the deposited film properties were investigated. The oxidation characteristics of the films were studied at temperatures ranging from 800 and 1000+C up to 50 h in air. The films showed superhardness and good oxidation resistance..

• 한국재료학회지
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• 제4권8호
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• pp.921-926
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• 1994

Gate oxide의 특성은 세정공정에서 사용된 last세정용액에 큰 영향을 받는다. Standard RCA, HF-last, SCI-last, and HF-only 공정들은 gate oxidation하기 전 본 실험에서 행해진 세정공정들이다. 세정공정을 마친 Si기판들은 oxidation furnace에서 $900^{\circ}C$로 thermal oxidation공정을 거치게 된다. 100$\AA$의 gate oxide를 성장시킨 후 lifetime detector, VPD, AAS, SIMS, TEM, 그리고 AFM고 같은 분석장비를 이용하여 oxide의 특성을 평가했다. HF-last와 HF-only 공정에 의해 금속 불순물들이 매우 효과적으로 제거됐음을 알 수 있었다. Oxide의 표면 및 계면 형상은AFM과 TEM 측정을 통하여 관찰하였다. 표면거칠기는 SCI 세정용액을 사용한 splits 실험에서 불균일함이 관찰되었고 HF-only세정공정을 거친 시편 및 계면이 가장 smooth했다.