• Journal of the Korean Ceramic Society
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• v.22 no.6
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• pp.5-8
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• 1985

Graphite has been oxidized to graphite hydrogen sulfate in concentrated $H_2SO_4$. Anodic oxidation and chemical oxidation of graphite in $H_2SO_4$ generally leads to the formation of intercalation compounds of the ionic salt type through incorporation of $H_2SO_4^-$ions and $H_2SO_4$ molecules into the graphite. Several other reactions also accur at various points of the charging cycle. But there is no satisfactory kinetics and mechanism of intercalationin graphite. We have studied them with anodic oxidation and chemical oxidation. We found six distinct phenomena between 2nd stage and 1st stage in chemical oxidation. We examined them in detail by the following in the measurements electrical oxidation. X-ray diffractions UV-Vis spectroscopy density measurements. We could obtained a equation for kinetic according to the reaction rate from this results and mechanism of intercalation between 2nd stage and 1st stage with hydrogen sulfate in graphite. Three thesis were written for the mechanism of intercalation compounds in graphite with hydrogen sulfate ; first thesis is anodic oxidation second thesis is chemical oxidation and definition of transit phase between 2nd etc the third thesis is the kinetic mechanism of intercalation compounds in graphite with Hydrogen sulfate. This thesis is the first paper among three thesis as anodic oxidation.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.7
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• pp.759-766
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• 1988

the effect of heat treatment in oxygen ambient on the nucleation and growth of oxidation induced stacking faults(OSF) in n-type(100)silicon wafer has been investigated. The growth of OSF is determind as a function of oxygen concentration in silicon wafer, heat treatment time and temperature, and the activation energy for the growth of OSF can be obtained from the growth kinetics. The activation energies are respectively 2.66 eV for dry oxidation and 2.37 eV for wet oxidation. In this paper, we have also studied the structural feature of OSF with the comparison of optical microscopic morphology and crystalline structure.

• Journal of the Korean institute of surface engineering
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• v.35 no.6
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• pp.363-370
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• 2002

Empirical equations for the oxide thickness and the weight gain of Zircaloy-4 cladding during the oxidation in high temperature, high pressure steam have been developed. Firstly, the empirical equations for oxide thickness in 1 atm steam in 700~100$0^{\circ}C$ were made, then, the enhancement factor for the steam pressure effects on Zircaloy-4 cladding oxidation in high temperature steam was added. Based on the analysis of the weight fraction of dissolved oxygen in metal layer, empirical equations for the weight gain of Zircaloy-4 in high pressure, high temperature steam were developed. We compare the developed empirical equations with the Baker-Just correlation. The Baker-Just correlation can give a non-conservative estimation of oxidation of Zircaloy-4, depending on the steam pressure. These developed empirical equations can be used for the correct estimation of oxidation of Zircaloy-4 during accident analysis.

• Journal of the Korean Ceramic Society
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• v.35 no.6
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• pp.535-542
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• 1998

SOI(silicon oninsulator) was fabricated through the direct bonding of a hydrophilized single crystal Si wafer and a thermally oxidized SiO2 thin film to investigate the stacking faults in silicon at the Si/SiO2 in-terface. At first the oxidation kinetics of SiO2 thin film and the stacking fault distribution at the oxidation interface were investigated. The stacking faults could be divided into two groups by their size and the small-er ones were incorporated into the larger ones as the oxidation time and temperature increased. The den-sity of the smaller ones based critically lower eventually. The SOI wafers directly bonded at the room temperature were annealed at 120$0^{\circ}C$ for 1 hour. The stacking faults at the bonding and oxidation interface were examined and there were anomalies in the distributions of the stacking faults of the bonded region to arrange in ordered ring-like fashion.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.360-360
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• 2010

Very initial stage of oxidation process of Si (001) surface was investigated using large scale molecular dynamics simulation. Reactive force field potential was used for the simulation owing to its ability to handle charge variation associated with the oxidation reaction. To know the detail mechanism of both adsorption and desorption of water molecule (for simulating wet oxidation), oxygen molecule (for dry oxidation) and their atom constituents, interaction of one molecule with Si surface was carefully observed. The simulation is then continued with many water and oxygen molecules to understand the kinetics of oxide growth. The results show that possibilities of desorption and adsorption depend strongly on initial atomic configuration as well as temperature. We observed a tendency that H atoms come relatively into deeper surface or otherwise quickly desorbed away from the silicon surface. On the other hand, most oxygen atoms are bonded with first layer of silicon surface. We also noticed that charge transfer is only occur in nearest neighbor regime which has been pointed out by DFT calculation. Atomic structure of the interface between the oxide and Si substrate was characterized in atomic scale.

• Bulletin of the Korean Chemical Society
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• v.30 no.9
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• pp.1939-1945
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• 2009

Kinetic investigations on the oxidation of pyrazine and four 2-substituted pyrazines viz., 2-methylpyrazine, 2-ethylpyrazine, 2-methoxypyrazine and 2-aminopyrazine by bromamine-B (BAB) to the respective N-oxides have been studied in HCl$O_4$ medium at 303 K. The reactions show identical kinetics being first-order each in $[BAB]_o\;and\;[pyrazine]_o$, and a fractional- order dependence on $[H^+]$. Effect of ionic strength of the medium and addition of benzenesulfonamide or halide ions showed no significant effect on the reaction rate. The dielectric effect is positive. The solvent isotope effect was studied using $D_2$O. The reaction has been studied at different temperatures and activation parameters for the composite reaction have been evaluated from the Arrhenius plots. The reaction showed 1:1 stoichiometry and the oxidation products of pyrazines were characterized as their respective N-oxides. Under comparable experimental conditions, the oxidation rate of pyrazines increased in the order: 2-aminopyrazine > 2-methoxypyrazine > 2-ethylpyrazine > 2-methylpyrazine > pyrazine. The rates correlate with the Hammett $\sigma$ relationship and the reaction constant $\rho$ was found to be -0.8, indicating that electron donating centres enhance the rate of reaction. An isokinetic temperature of $\beta$ = 333 K, indicated that the reaction was enthalpy controlled. A mechanism consistent with the experimental results has been proposed in which the rate determining step is the formation of an intermediate complex between the substrate and the diprotonated species of the oxidant. The related rate law in consistent with observed results has been deduced.

• Korean Chemical Engineering Research
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• v.54 no.3
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• pp.340-349
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• 2016

Electro oxidation system was designed in this study for the reduction of COD (Chemical Oxygen Demand) from high-strength wastewater, produced during refinery turnaround period. First, BDD (Boron Doped Diamond) electrode was synthesized and electro oxidation system of actual industrial wastewater was developed by adopting the synthesized BDD electrode. The experiments were carried out under various operating conditions under certain range of current density, pH, electrolyte concentration and reaction time. Secondly, reaction kinetics were identified based on the experimental results, and the kinetics were embedded into a genetic mathematical model of the electro oxidation system. Lastly, design and operating parameters of the process were optimized to maximize the efficiency of the pretreatment system. The coefficient of determination ($R^2$) of the model was found to be 0.982, and it proved high accuracy of the model compared with experimental results.

• Environmental Engineering Research
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• v.15 no.4
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• pp.183-190
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• 2010

Biogenic Mn oxides are expected to have great potential in the control of water pollution due to their high catalytic activity, although information on biological Mn oxidation is not currently sufficient. In this study, the growth of a Mn oxidizing microorganism, Pseudomonas putida MnB1, was examined, with the Mn oxides formed by this strain characterized. The growth of P. putida MnB1 was not significantly influenced by Mn(II), but showed a slightly decreased growth rate in the presence of Pb(II) and EE2, indicating their insignificant adsorption onto the cell surface. Mn oxides were formed by P. putida MnB1, but the liquid growth medium and resulting biogenic solids were poorly crystalline, nano-sized particles. Biogenic Mn oxidation by P. putida MnB1 followed Michaelis-Menten kinetics, with stoichiometric amounts of Mn oxides formed, which corresponded with the initial Mn(II) concentration. However, the formation of Mn oxides was inhibited at high initial Mn(II) concentration, suggesting mass transfer obstruction of Mn(II) due to the accumulation of Mn oxides on the extracellular layer. Mn oxidation by P. putida MnB1 was very sensitive to pH and temperature, showing sharp decreases in the Mn oxidation rates outside of the optimum ranges, i.e. pH 7.43-8.22 and around 20-$26^{\circ}C$.

• Journal of Electrochemical Science and Technology
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• v.13 no.2
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• pp.292-307
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• 2022

The study presents kinetics of degradation and mineralization of an anti-epileptic drug Lamotrigine (LAM) in the aqueous matrix by electrochemical advanced oxidation process (EAOP) on Ti/DSA (Ta₂O₅-Ir₂O₅) and Stainless Steel (SS) anodes using sodium sulphate as supporting electrolyte. On both the anodes, kinetic behaviour was pseudo-first-order for degradation as well as mineralization of LAM. On Ti/DSA anode, maximum LAM degradation of 75.42% was observed at an associated specific charge of 3.1 (Ah/litre) at a current density of 1.38 mA/cm² and 100 ppm Na₂SO₄ concentration. Maximum mineralization attained was 44.83% at an associated specific charge of 3.1 (Ah/litre) at a current density of 1.38 mA/cm² and 50 ppm concentration of Na₂SO₄ with energy consumption of 2942.71 kWh/kgTOC. Under identical conditions on SS anode, a maximum of 98.92% LAM degradation was marked after a specific charge (Q) of 3.1 (Ah/litre) at a current density of 1.38 mA/cm² and 100 ppm concentration of Na₂SO₄. Maximum LAM mineralization on SS anode was 98.53%, marked at a specific charge of 3.1 (Ah/litre) at a current density of 1.38 mA/cm² and 75 ppm concentration of Na₂SO₄, with energy consumption of 1312.17 kWh/kgTOC. Higher Mineralization Current Efficiency (MCE) values were attained for EAOP on SS anode for both degradation and mineralization due to occurrence of combined electro-oxidation and electro-coagulation process in comparison to EAOP on Ti/DSA anode due to occurrence of lone electro-oxidation process.

• Corrosion Science and Technology
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• v.21 no.1
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• pp.53-61
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• 2022

Alloys of Fe-(5.3-29.8)%Mn-(1.1-1.9)%Al-(0.4-0.5)%C were oxidized at 550 ℃ to 650 ℃ for 20 h to understand effects of alloying elements on oxidation. Their oxidation resistance increased with increasing Mn level to a small extent. Their oxidation kinetics changed from parabolic to linear when Mn content was decreased and temperature was increasing. Oxide scales primarily consisted of Fe₂O₃, Mn₂O₃, and MnFe₂O₄ without any protective Al-bearing oxides. During oxidation, Fe, Mn, and a lesser amount of Al diffused outward, while oxygen diffused inward to form internal oxides. Both oxide scales and internal oxides consisted of Fe, Mn, and a small amount of Al. The oxidation of Mn and carbon transformed γ-matrix to α-matrix in the subscale. The oxidation led to the formation of relatively thick oxide scales due to inherently inferior oxidation resistance of alloys and the formation of voids and cracks due to evaporation of manganese, decarburization, and outward diffusion of cations across oxides.