• 제목/요약/키워드: Oxidation kinetics

검색결과 271건 처리시간 0.021초

흑연에 황산을 Intercalation 시킬때의 Mechanism 규명 (I. 전기적 산화방법에 의한 Graphite Salts의 중간상에 관한 연구) (Mechanism of Intercalation Compounds in Graphite with Hydrogen Sulfate (I. Study of Intermediate Phase between 2 Stage and 1 Stage in Graphite Hydrogen Sulfate with Anodic Oxidation))

  • 고영신;한경석;이풍헌
    • 한국세라믹학회지
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    • 제22권6호
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    • pp.5-8
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    • 1985
  • Graphite has been oxidized to graphite hydrogen sulfate in concentrated $H_2SO_4$. Anodic oxidation and chemical oxidation of graphite in $H_2SO_4$ generally leads to the formation of intercalation compounds of the ionic salt type through incorporation of $H_2SO_4^-$ions and $H_2SO_4$ molecules into the graphite. Several other reactions also accur at various points of the charging cycle. But there is no satisfactory kinetics and mechanism of intercalationin graphite. We have studied them with anodic oxidation and chemical oxidation. We found six distinct phenomena between 2nd stage and 1st stage in chemical oxidation. We examined them in detail by the following in the measurements electrical oxidation. X-ray diffractions UV-Vis spectroscopy density measurements. We could obtained a equation for kinetic according to the reaction rate from this results and mechanism of intercalation between 2nd stage and 1st stage with hydrogen sulfate in graphite. Three thesis were written for the mechanism of intercalation compounds in graphite with hydrogen sulfate ; first thesis is anodic oxidation second thesis is chemical oxidation and definition of transit phase between 2nd etc the third thesis is the kinetic mechanism of intercalation compounds in graphite with Hydrogen sulfate. This thesis is the first paper among three thesis as anodic oxidation.

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산화 적층 결합의 생성, 성장 및 소멸에 관한 연구 - 제1부:산화 적층 결함의 생성과 열적 거동 (A Study on Nucleation, Growth and Shrinkage of Oxidation Induced Stacking Faults (OSF) -Part 1: Nucleation and Thermal Behavior of Oxidation Induced Stacking Faults(OSF))

  • 김용태;김선근;민석기
    • 대한전자공학회논문지
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    • 제25권7호
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    • pp.759-766
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    • 1988
  • the effect of heat treatment in oxygen ambient on the nucleation and growth of oxidation induced stacking faults(OSF) in n-type(100)silicon wafer has been investigated. The growth of OSF is determind as a function of oxygen concentration in silicon wafer, heat treatment time and temperature, and the activation energy for the growth of OSF can be obtained from the growth kinetics. The activation energies are respectively 2.66 eV for dry oxidation and 2.37 eV for wet oxidation. In this paper, we have also studied the structural feature of OSF with the comparison of optical microscopic morphology and crystalline structure.

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고압 고온 수증기에서 지르칼로이-4 산화반응 정량화 및 사고해석에의 응용 (Zricaloy-4 Oxidation Kinetics in High-Pressure High-Temperature Steam and Application to Accident Analysis)

  • 박광헌
    • 한국표면공학회지
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    • 제35권6호
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    • pp.363-370
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    • 2002
  • Empirical equations for the oxide thickness and the weight gain of Zircaloy-4 cladding during the oxidation in high temperature, high pressure steam have been developed. Firstly, the empirical equations for oxide thickness in 1 atm steam in 700~100$0^{\circ}C$ were made, then, the enhancement factor for the steam pressure effects on Zircaloy-4 cladding oxidation in high temperature steam was added. Based on the analysis of the weight fraction of dissolved oxygen in metal layer, empirical equations for the weight gain of Zircaloy-4 in high pressure, high temperature steam were developed. We compare the developed empirical equations with the Baker-Just correlation. The Baker-Just correlation can give a non-conservative estimation of oxidation of Zircaloy-4, depending on the steam pressure. These developed empirical equations can be used for the correct estimation of oxidation of Zircaloy-4 during accident analysis.

SiO$_2$ 박막을 이용한 SOI 직접접합공정 및 특성 (Processing and Characterization of a Direct Bonded SOI using SiO$_2$ Thin Film)

  • 신동운;최두진;김긍호
    • 한국세라믹학회지
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    • 제35권6호
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    • pp.535-542
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    • 1998
  • SOI(silicon oninsulator) was fabricated through the direct bonding of a hydrophilized single crystal Si wafer and a thermally oxidized SiO2 thin film to investigate the stacking faults in silicon at the Si/SiO2 in-terface. At first the oxidation kinetics of SiO2 thin film and the stacking fault distribution at the oxidation interface were investigated. The stacking faults could be divided into two groups by their size and the small-er ones were incorporated into the larger ones as the oxidation time and temperature increased. The den-sity of the smaller ones based critically lower eventually. The SOI wafers directly bonded at the room temperature were annealed at 120$0^{\circ}C$ for 1 hour. The stacking faults at the bonding and oxidation interface were examined and there were anomalies in the distributions of the stacking faults of the bonded region to arrange in ordered ring-like fashion.

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Atomic Study of Oxidation of Si(001) surface by MD Simulation

  • Pamungkas, Mauludi Ariesto;Kim, Byung-Hyun;Joe, Min-Woong;Lee, Kwang-Ryeol
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.360-360
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    • 2010
  • Very initial stage of oxidation process of Si (001) surface was investigated using large scale molecular dynamics simulation. Reactive force field potential was used for the simulation owing to its ability to handle charge variation associated with the oxidation reaction. To know the detail mechanism of both adsorption and desorption of water molecule (for simulating wet oxidation), oxygen molecule (for dry oxidation) and their atom constituents, interaction of one molecule with Si surface was carefully observed. The simulation is then continued with many water and oxygen molecules to understand the kinetics of oxide growth. The results show that possibilities of desorption and adsorption depend strongly on initial atomic configuration as well as temperature. We observed a tendency that H atoms come relatively into deeper surface or otherwise quickly desorbed away from the silicon surface. On the other hand, most oxygen atoms are bonded with first layer of silicon surface. We also noticed that charge transfer is only occur in nearest neighbor regime which has been pointed out by DFT calculation. Atomic structure of the interface between the oxide and Si substrate was characterized in atomic scale.

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N-Oxidation of Pyrazines by Bromamine-B in Perchloric Acid Medium: Kinetic and Mechanistic Approach

  • Puttaswamy;Shubha, J.P.
    • Bulletin of the Korean Chemical Society
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    • 제30권9호
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    • pp.1939-1945
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    • 2009
  • Kinetic investigations on the oxidation of pyrazine and four 2-substituted pyrazines viz., 2-methylpyrazine, 2-ethylpyrazine, 2-methoxypyrazine and 2-aminopyrazine by bromamine-B (BAB) to the respective N-oxides have been studied in HCl$O_4$ medium at 303 K. The reactions show identical kinetics being first-order each in $[BAB]_o\;and\;[pyrazine]_o$, and a fractional- order dependence on $[H^+]$. Effect of ionic strength of the medium and addition of benzenesulfonamide or halide ions showed no significant effect on the reaction rate. The dielectric effect is positive. The solvent isotope effect was studied using $D_2$O. The reaction has been studied at different temperatures and activation parameters for the composite reaction have been evaluated from the Arrhenius plots. The reaction showed 1:1 stoichiometry and the oxidation products of pyrazines were characterized as their respective N-oxides. Under comparable experimental conditions, the oxidation rate of pyrazines increased in the order: 2-aminopyrazine > 2-methoxypyrazine > 2-ethylpyrazine > 2-methylpyrazine > pyrazine. The rates correlate with the Hammett $\sigma$ relationship and the reaction constant $\rho$ was found to be -0.8, indicating that electron donating centres enhance the rate of reaction. An isokinetic temperature of $\beta$ = 333 K, indicated that the reaction was enthalpy controlled. A mechanism consistent with the experimental results has been proposed in which the rate determining step is the formation of an intermediate complex between the substrate and the diprotonated species of the oxidant. The related rate law in consistent with observed results has been deduced.

전기산화공법을 이용한 고농도폐수 처리공정의 모델링 및 최적화 (Modeling and Optimization of High Strength Wastewater Treatment Using the Electro Oxidation Process)

  • 이홍민;이상선;황성원;진동복
    • Korean Chemical Engineering Research
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    • 제54권3호
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    • pp.340-349
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    • 2016
  • 본 연구에서는 정유산업의 유지 및 보수기간에 배출되는 고농도폐수의 COD (Chemical Oxygen Demand)를 효과적으로 제거하기 위해 전기산화공법을 적용하였다. 우선 산업에서 배출되는 실제 폐수를 처리하기 위하여 BDD전극을 개발하고, 개발된 전극을 이용하여 전류밀도, pH, 전해질농도, 반응시간 등과 같은 다양한 운전조건하에 실험을 진행하였다. 둘째, 이러한 실험결과를 이용하여 전기분해의 kinetic parameter를 산출한 후에, 이를 토대로 전기산화 처리설비를 수학적으로 모델링 하였다. 마지막으로, 기존에 정상운전 조건 시 사용하던 저 농도 폐수를 처리하는 공정의 유입조건에 맞추기 위하여 전기산화 처리설비의 설계 및 운전의 다양한 변수들을 최적화함으로써 보다 효율적인 폐수 전처리 시스템을 개발하였다. 본 연구를 통해 개발된 모델의 결정계수($R^2$)는 0.982로 상당히 작은 오차범위를 보여줌으로써 모델의 높은 정확도를 입증하였다.

Characterization of the Biogenic Manganese Oxides Produced by Pseudomonas putida strain MnB1

  • Jiang, Shaofeng;Kim, Do-Gun;Kim, Jeong-Hyun;Ko, Seok-Oh
    • Environmental Engineering Research
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    • 제15권4호
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    • pp.183-190
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    • 2010
  • Biogenic Mn oxides are expected to have great potential in the control of water pollution due to their high catalytic activity, although information on biological Mn oxidation is not currently sufficient. In this study, the growth of a Mn oxidizing microorganism, Pseudomonas putida MnB1, was examined, with the Mn oxides formed by this strain characterized. The growth of P. putida MnB1 was not significantly influenced by Mn(II), but showed a slightly decreased growth rate in the presence of Pb(II) and EE2, indicating their insignificant adsorption onto the cell surface. Mn oxides were formed by P. putida MnB1, but the liquid growth medium and resulting biogenic solids were poorly crystalline, nano-sized particles. Biogenic Mn oxidation by P. putida MnB1 followed Michaelis-Menten kinetics, with stoichiometric amounts of Mn oxides formed, which corresponded with the initial Mn(II) concentration. However, the formation of Mn oxides was inhibited at high initial Mn(II) concentration, suggesting mass transfer obstruction of Mn(II) due to the accumulation of Mn oxides on the extracellular layer. Mn oxidation by P. putida MnB1 was very sensitive to pH and temperature, showing sharp decreases in the Mn oxidation rates outside of the optimum ranges, i.e. pH 7.43-8.22 and around 20-$26^{\circ}C$.

Electrochemical Advanced Oxidation of Lamotrigine at Ti/DSA (Ta2O5-Ir2O5) and Stainless Steel Anodes

  • Meena, Vinod Kumar;Ghatak, Himadri Roy
    • Journal of Electrochemical Science and Technology
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    • 제13권2호
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    • pp.292-307
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    • 2022
  • The study presents kinetics of degradation and mineralization of an anti-epileptic drug Lamotrigine (LAM) in the aqueous matrix by electrochemical advanced oxidation process (EAOP) on Ti/DSA (Ta2O5-Ir2O5) and Stainless Steel (SS) anodes using sodium sulphate as supporting electrolyte. On both the anodes, kinetic behaviour was pseudo-first-order for degradation as well as mineralization of LAM. On Ti/DSA anode, maximum LAM degradation of 75.42% was observed at an associated specific charge of 3.1 (Ah/litre) at a current density of 1.38 mA/cm2 and 100 ppm Na2SO4 concentration. Maximum mineralization attained was 44.83% at an associated specific charge of 3.1 (Ah/litre) at a current density of 1.38 mA/cm2 and 50 ppm concentration of Na2SO4 with energy consumption of 2942.71 kWh/kgTOC. Under identical conditions on SS anode, a maximum of 98.92% LAM degradation was marked after a specific charge (Q) of 3.1 (Ah/litre) at a current density of 1.38 mA/cm2 and 100 ppm concentration of Na2SO4. Maximum LAM mineralization on SS anode was 98.53%, marked at a specific charge of 3.1 (Ah/litre) at a current density of 1.38 mA/cm2 and 75 ppm concentration of Na2SO4, with energy consumption of 1312.17 kWh/kgTOC. Higher Mineralization Current Efficiency (MCE) values were attained for EAOP on SS anode for both degradation and mineralization due to occurrence of combined electro-oxidation and electro-coagulation process in comparison to EAOP on Ti/DSA anode due to occurrence of lone electro-oxidation process.

Oxidation of Fe-(5.3-29.8)%Mn-(1.1-1.9)%Al-0.45%C Alloys at 550-650 ℃

  • Park, Soon Yong;Xiao, Xiao;Kim, Min Ji;Lee, Geun Taek;Hwang, Dae Ho;Woo, Young Ho;Lee, Dong Bok
    • Corrosion Science and Technology
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    • 제21권1호
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    • pp.53-61
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    • 2022
  • Alloys of Fe-(5.3-29.8)%Mn-(1.1-1.9)%Al-(0.4-0.5)%C were oxidized at 550 ℃ to 650 ℃ for 20 h to understand effects of alloying elements on oxidation. Their oxidation resistance increased with increasing Mn level to a small extent. Their oxidation kinetics changed from parabolic to linear when Mn content was decreased and temperature was increasing. Oxide scales primarily consisted of Fe2O3, Mn2O3, and MnFe2O4 without any protective Al-bearing oxides. During oxidation, Fe, Mn, and a lesser amount of Al diffused outward, while oxygen diffused inward to form internal oxides. Both oxide scales and internal oxides consisted of Fe, Mn, and a small amount of Al. The oxidation of Mn and carbon transformed γ-matrix to α-matrix in the subscale. The oxidation led to the formation of relatively thick oxide scales due to inherently inferior oxidation resistance of alloys and the formation of voids and cracks due to evaporation of manganese, decarburization, and outward diffusion of cations across oxides.