• Bulletin of the Korean Chemical Society
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• v.33 no.2
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• pp.670-674
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• 2012

The photovoltaic performance of solid-state dye-sensitized solar cells employing hole transport material (HTM), 2,2',7,7'-tetrakis-(N,N-di-p-methoxyphenyl-amine)-9,9'-spirobifluorene (spiro-MeOTAD), has been investigated in terms of HTM overlayer thickness. Two important parameters, soak time and spin-coating rate, are varied to control the HTM thickness. Decrease in the period of loading the spiro-MeOTAD solution on $TiO_2$ layer (soak time) leads to decrease in the HTM overlayer thickness, whereas decrease in spin-coating rate increases the HTM overlayer thickness. Photocurrent density and fill factor increase with decreasing the overlayer thickness, whereas open-circuit voltage remains almost unchanged. The improved photocurrent density is mainly ascribed to the enhanced charge transport rate, associated with the improved charge collection efficiency. Among the studied HTM overlayer thicknesses, ca. 230 nm-thick HTM overlayer demonstrates best efficiency of 4.5% at AM 1.5G one sun light intensity.

• Journal of the Korean Vacuum Society
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• v.3 no.1
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• pp.59-64
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• 1994

극소전자 디바이스의 고집적화와 더불어 박막배선의 선폭은 0.5$\mu$m이하까지 축소되며 초고집적 submicron 박막금속화가 진행되고 있다. 미세회로에 적용되어지는 배선재료는 인가되는 고전류밀도로 인하여 electromigration 에 의한 결함이 쉽게 발생한다는 단점이있다. 금속박막 전도체위의 dielectric overlayer는 electromigration 에 대한 passivation 효과를 보여 극소전자 디바이스의 평균수명을 향상시 킨다.본 연구에서는 박막금속화에서 dielectric overlayer의 passivation 효과를 알아보기 위하여 약 3000 $\AA$ 두께의 Al,Al-1%Si, Ag 그리고 Cu 박막배선위에 증착하여 SiO2절연보호막의 유무에 따른 박막배선 의 수명변화 및 신뢰도를 측정하였다. 박막배선에 인가된 전류밀도는 1x106 A/cm2와 1x107 A/cm2 이었다. SiO2 dielectric overlayer는 Al,Al-1%Si Ag. Cu 박막배선에서는 electromigration에 대한 보호막 혀과를 보이며 평균수명을 모두 향상시킨다. SiO2 passivation 효과는 Al, Ag, Cu 박막중 Cu 박막배선에서 가 장 크게 나타났다. SiO2 dielectric overlayer가 형성되지 않은 경우 Al 박막배선의 수명이 가장 긴 것으 로 나타났으나 SiO2 가 형성된 경우는 Cu 박막배선의 수명이 가장 길게 나타났다.

• Nuclear Engineering and Technology
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• v.54 no.11
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• pp.4072-4083
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• 2022

Ultrasonic impact treatment (UIT) is carried out on the Ni-based alloy stainless steel pipe gas tungsten arc welding (GTAW) girth weld, the differences of microstructure, microhardness and shear strength distribution of the joint before and after ultrasonic shock are studied by microhardness test and shear punch test. The results show that after UIT, the plastic deformation layer is formed on the outside surface of the Ni-based alloy overlayer, single-phase austenite and γ type precipitates are formed in the overlayer, and a large number of columnar crystals are formed on the bottom side of the overlayer. The average microhardness of the overlayer increased from 221 H V to 254 H V by 14.9%, the shear strength increased from 696 MPa to 882 MPa with an increase of 26.7% and the transverse average residual stress decreased from 102.71 MPa (tensile stress) to -18.33 MPa (compressive stress), the longitudinal average residual stress decreased from 114.87 MPa (tensile stress) to -84.64 MPa (compressive stress). The fracture surface has been appeared obvious shear lip marks and a few dimples. The element migrates at the fusion boundary between the Ni-based alloy overlayer and the austenitic stainless steel joint, which is leaded to form a local martensite zone and appear hot cracks. The welded joint is cooled by FA solidification mode, which is forming a large number of late and skeleton ferrite phase with an average microhardness of 190 H V and no obvious change in shear strength. The base metal is all austenitic phase with an average microhardness of 206 H V and shear strength of 696 MPa.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.149-149
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• 2016

투명전극인 Indium Tin Oxide (ITO)는 높은 투과도와 낮은 면저항을 가지지만 brittle한 성질로 유연성이 떨어져 플렉서블한 디바이스에 적용하기에는 어려움이 있다. 이를 해결하기 위해서 ITO를 대체할 수 있는 CNT, Graphene, AgNW, 전도성 고분자 투명전극이 연구되어지고 있다. 투명전극 중에서도 AgNW는 용액공정으로 제조 단가가 비교적 저렴하며, 높은 투과도와 전기전도 특성을 가지는 투명전극으로 주목받고 있는 차세대 투명전극이다. AgNW는 나노와이어가 네트워크를 형성하고 있어 높은 전도성과 광 투과도를 가지지만 내열성이 좋지 않아 $200^{\circ}C$ 이상의 온도에서 손상된다. 또한 흡습성의 고분자 물질로 둘러싸여 있기 때문에 내환경성이 좋지 않다는 단점이 있다. 이를 해결하기 위해 본 연구에서는 AgNW전극에 플라즈마 처리를 통해서 $250^{\circ}C$ 까지 내열성을 향상시킬 수 있었으며 추가적으로 Overlayer를 형성하여 $300^{\circ}C$까지 열적 안전성을 확보하여 내열성을 향상시켰다. 습도 85%, 온도 $85^{\circ}C$에서 36일간 환경안정성테스트 결과, 기존 AgNW 전극은 저항이 164% 증가한 것에 비해 플라즈마 처리후 Overlayer를 형성한 AgNW는 49% 저항증가로 저항증가율이 3배 이상 감소하여 환경안정성이 향상된 것을 확인하였다. 이는 흡습성 고분자 물질이 플라즈마 처리에 의해 제거되고 Overlayer가 보호막 역할을 하여 산소와 반응하지 않았기 때문으로 판단된다. 플라즈마 처리와 Overlayer를 형성한 AgNW 전극을 적용하여 투명히터를 제작한 결과 유연 기판상 투명히터로 활용이 가능함을 확인하였고 내열성이 향상되어 높은 전압에서도 안정적인 구동을 보였다. 이를 투명히터 뿐만 아니라 다양한 디바이스에 적용한다면 보다 높은 효율을 기대할 수 있을 것이라 예상된다.

• Progress in Superconductivity and Cryogenics
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• v.24 no.4
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• pp.1-5
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• 2022

We investigate the effect of surface disorder on the lower critical field (H_c1) of MgB₂ thin films with a thickness of 850 nm, where the disorder on the surface region is produced by the irradiation of 140 keV Co ions with the dose of 1 × 10¹⁴ ions/cm². The thickness of the damaged region by the irradiation is around 143 nm, corresponding to ~17% of the whole thickness of the film, thereby forming the disordered MgB₂ overlayer on the pure MgB₂ layer. The magnetic field dependence of magnetization, M(H), for the pristine MgB₂ thin film and the film with overlayer is measured at various temperatures, and H_c1 is determined from the difference (△M) between the Meissner line and magnetization signal with the criterion of △M = 10^-3 emu. Intriguingly, the film with the disordered overlayer shows a remarkably large H_c1(0) = 108 Oe compared to the H_c1(0) = 84 Oe of pristine film, indicating that the disordered MgB₂ overlayer on the pure MgB₂ layer serves to prevent the penetration of vortices into the sample. These results provide new ideas for improving the superheating field to design high-performance superconducting radio-frequency cavities.

• Applied Chemistry for Engineering
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• v.8 no.2
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• pp.191-196
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• 1997

The isothermal reduction on $Pt/MoO_3/SiO_2$ at $50^{\circ}C$ demonstrates that the rate of hydrogen spillover is increased as calciantion temperature increases. That is due to the overlayer formation over the surface of Pt crystallites, investigated by TEM and CO chemisorption. It is known that reaction mechanism of skeletal isomerization of 1-butene into iso-butene is composed of 2 step such as formation of carbonium ion and isomerization of methyl group. It is expected that the increase of i-butene yield after calcination at $250^{\circ}C$ is due to increased rate of hydrogen spillover coming from first, overlayer formation over Pt surface and second, chlorine lessoning from $PtCl_x$ precursor.

• Journal of Korean Vacuum Science & Technology
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• v.5 no.2
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• pp.52-55
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• 2001

We report best dielectric function of ZnS by spectroscopic ellipsometry in the 3.7 - 6.0 eV photon energy range at room temperature. Using proper wet chemical etching procedure, natural overlayer was removed to obtain the pure dielectric function of ZnS, which had a higher <$\xi$$_2$> value at the El band gap peak than that previously reported. We also determined the dielectric property of the natural overlayer on ZnS by following the evolution of <$\xi$$_2$> with chemical etching. We found that the optical property of the overlayer was well described by amorphous semiconductor model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.451-456
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• 2024

Organic photovoltaic (OPV) devices have attracted attention due to their high efficiency and simple manufacturing process. Applying an overlayer to OPV devices is one way to improve their performance because it can improve charge extraction and suppress vertical phase separation. In addition, dichloromethane (DCM) was used as an orthogonal solvent to minimize the effect on other layers. However, an coating problems due to the use of DCM were found, which affects surface morphology as rough or peeling. Additional research efforts are needed to solve these problems, and optimal results are expected to be obtained by utilizing various buffer layers or selective organic solvents.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.322-329
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• 2007

The interaction of oxygen with the ordered $Ni_3Al(111)$ alloy surface at 800 K and 1000 K has been investigated using LEED, STM, HREELS, UPS, and PAX. The clean $Ni_3Al(111)$ surface exhibits a "$2{\times}2$" LEED pattern corresponding to the ordered bulk-like terminated surface structure. For an adsorption of oxygen at 800 K, LEED shows an unrelated oxygen induced superstructure with a lattice spacing of $2.93\;{\AA}$ in addition to the ($1{\times}1$) substrate spots. The combined HREELS and the UPS data point to an oxygen chemisorption on threefold aluminum sites while PAX confirms an islands growth of the overlayer. Since such sites are not available on the $Ni_3Al(111)$ surface, we conclude the buildup of an oxygen covered aluminum overlayer. During oxygen exposure at 1000 K, however, we observe the growth of ${\gamma}'-Al_2O_3$ structure on the reordered $Ni_3Al(111)$ substrate surface. This structure has been identified by means of HREELS and STM. The HREELS data will show that at 800 K the oxidation shows a very characteristic behavior that cannot be described by the formation of an $Al_2O_3$ overlayer. Moreover, the STM image shows a "Strawberry" structure due to the oxide islands formation at 1000 K. Conclusively, from the oxygen interaction with $Ni_3Al(111)$ alloy surface at 800 K and 1000 K an islands growth of the aluminum oxide overlayer has been found.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.73-77
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• 1992

It is not easy to determine the coverage of deposited overlayers on a single crystal. There are several techniques determining the overlayer thickness. We propose, in this study, a new simple method by using Auger spectra only without any sophisticated thickness monitor. An example of iron overlayers on copper single crystals is also showed.