• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.1
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• pp.33-38
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• 2008

The probability of an oscillation occurrence in M/W frequency conversion repeaters is low on account of the different operating frequency of the input and output signals. The probability of interference caused by the M/W frequency conversion repeaters to other systems is also low because the systems are used in the line-of-sight. Therefore M/W frequency conversion repeaters are generally used for retransmitting the signal received from base station to the islands. This paper describes the design and implementation of analog predistorter for M/W frequency conversion repeaters in mobile communications. The M/W repeaters convert IF frequency of 1010+/-10MHz to RF frequency of 11GHz. A predistorter can be designed for the M/W repeater operating in either IF or M/W frequency. In this paper IF predistorter operated in 1010MHz is designed and implemented because a M/W predistorter operated in 11GHz is difficult to implement. The IF predistorter can linearize RF modules in the repeater followed by IF stages. The performance test results show that the implemented analog predistorter improves ACPR of 10dB at the output power of 25dBm with the signal frequency of 10.805GHz.

• Journal of IKEEE
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• v.8 no.1 s.14
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• pp.152-159
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• 2004

In this study, we design the one-chip PWM IC with high voltage power switch (300V class LDMOSFET) for SMPS (Switching Mode Power Supply) application. Reference circuits generate constant voltage(5V) in the various of power supply and temperature condition. Error amp. is designed with large DC gain $({\simeq}65dB)$, unity frequency $({\simeq}190kHz)$ and large $PM(75^{\circ})$. comparator is designed with 2 stage. Saw tooth generators operate with 20kHz oscillation frequency. Also, we optimize drift concentration & drift length of n-LDMOSFET for design of high voltage switching device. It is shown that simulation results have the breakdown voltage of 350V. (using ISE-TCAD Simulation tool). PWM IC with power switching device is designed with 2um design rule and Bi-DMOS technology.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.2
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• pp.128-135
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• 2013

This letter presents the MISHFET with si-doped AlGaN/GaN heterostructure for power amplifier. The device grown on 6H-SiC(0001) substrate with a gate length of 180 nm has been fabricated. The fabricated device exhibited maximum drain current density of 837 mA/mm and peak transconductance of 177 mS/mm. A unity current gain cutoff frequency was 45.6 GHz and maximum frequency of oscillation was 46.5 GHz. The reported output power density was 1.54 W/mm and A PAE(Power Added Efficiency) was 40.24 % at 9.3 GHz.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.1
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• pp.69-74
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• 2021

This paper introduces a low-power voltage-controlled oscillator(VCO) with filters that consist of resistors and capacitors. The proposed VCO contains a 5-stage current mode buffer, and each buffer cell has a resistor-capacitor filter that connects input and output terminals. The filter adds a zero to the buffer cell. Because the zero moves the oscillation condition to high frequencies, the proposed VCO can generate a high frequency clock with low power consumption. The proposed circuit has been designed with 0.18 ㎛ CMOS process. The power consumption is 9.83 mW at 2.7 GHz. The proposed VCO shows 3.64 pJ/Hz in our simulation study, whereas the conventional circuit shows 4.79 pJ/Hz, indicating that our VCO achieves 24% reduction in power consumption.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.6
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• pp.1143-1150
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• 2001

In this paper, we designed a downconverter for K-band satellite multipoint distribution service(SMDS). The designed downconverter consists of a low noise amplifiers, bandpass filter, stable local oscillator, drain mixer and If Amplifiers. Low noise amplifiers show 28㏈ gain and 1.5㏈ noise figure in the frequency range of 19.2㎓~20.2㎓, and a band pass filter has a -l㏈ insertion loss, and 18.25㎓ Stable local oscillator which is dielectric resonant oscillation, We obtained that the output power of the 18.25㎓ oscillation frequency is 0.5㏈m and the phase noise is the -84.67㏈c at 10KHz offset frequency. With the input RF signal the 19.2㎓~20.2㎓, conversion gain of the drain mixer shows 5㏈ at the Intermediate frequency range of 950MHz~1950MHz. We have proved that the designed downconverter satisfied the specification of a K-band satellite multipoint distribution service and it can be applied to the satellite internet receiver.

• Journal of Navigation and Port Research
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• v.27 no.4
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• pp.437-441
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• 2003

In this paper, the 30 W power amplifier for an IMT-2000 repeater was developed a gain flatness and the third IMD (Intermodulation distortion) by microwave absorber. The absorption ability of the absorber is shown up to -10 dB and -4 dB at 3.6 GHz, 2.3 GHz band, respectively. The power amplifier without absorber has the gain over 57 dB, the gain flatness of $\pm$0.33 dB and the third IMD of 27 dBc at 33.3 W output. Otherwise, the power amplifier with absorber has the gain over 58 dB, the gain flatness of less than $\pm$0.9, the third IMD over 29 dBc at the same output power. As a result, the characteristic of the different type shows improvement of 1 dB in gain, 0.3 dB in gain flatness and 1.77 dBc in IMD.

• ETRI Journal
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• v.27 no.1
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• pp.75-80
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• 2005

This paper addresses a fully-integrated low phase noise X-band oscillator fabricated using a carbon-doped InGaP heterojunction bipolar transistor (HBT) GaAs process with a cutoff frequency of 53.2 GHz and maximum oscillation frequency of 70 GHz. The oscillator circuit consists of a negative resistance generating circuit with a base inductor, a resonating emitter circuit with a microstrip line, and a buffering resistive collector circuit with a tuning diode. The oscillator exhibits 4.33 dBm output power and achieves -127.8 dBc/Hz phase noise at 100 kHz away from a 10.39 GHz oscillating frequency, which benchmarks the lowest reported phase noise achieved for a monolithic X-band oscillator. The oscillator draws a 36 mA current from a 6.19 V supply with 47.1 MHz of frequency tuning range using a 4 V change. It occupies a $0.8mm{\times}0.8mm$ die area.

• Journal of electromagnetic engineering and science
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• v.4 no.4
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• pp.156-161
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• 2004

The MMIC cascode VCO is designed, fabricated, and measured for Ku-band Low Noise Blcok(LNB) system using InGaP/GaAs HBT technology. The phase noise of -116.4 dBc/Hz at 1 MHz offset with output power of 1.3 dBm is obtained at 11.526 GHz by applying 3 V and 11 mA, which is comparatively better characteristics than compared with the different configuration VCOs fabricated with other technologies. The simulated results of oscillation frequency and second harmonic suppression agree with the measured results. The phase noise is improved due to the use of the smallest value of inductor in frequency determining network and the InGaP ledge function of the technology. The chip size of $830\time781\;{\mu}m^2$ is also achieved.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.370-373
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• 2003

Superluminescent diodes(SLDs) are the optimum light sources for application in optical measurement systems such as fiber gyroscopes, optical time domain reflectometers, and to short and medium distance optical communication systems. The broadband characteristics of SLDs reduce Rayleigh backscattering noise, polarization noise, and the bias offset due to the nonlinear Kerr effect in fiber gyro systems. In this paper, in order to suppress lasing oscillation, we introduced a laterally tilted SCH(Separate Confinement Heterostructure)-SLD with a window region. An output power of 11mW has been achieved at 200mA injection current at 25$^{\circ}C$. At 120mA, parallel and perpendicular to the junction were 31$^{\circ}$${\times}$38$^{\circ}$.

• Journal of Welding and Joining
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• v.33 no.1
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• pp.54-60
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• 2015

Laser-arc hybrid welding has been considered as an effective pipe girth welding process since early 2000's. Tolerance for fit-up offsets such as gap and edge misalignment is one of most important requirements in pipe girth laser-arc hybrid welding, and several approaches using parameter optimization, a laser beam scanning and an arc oscillation have been tried. However the required offset tolerance has not been fully accomplished up to now and laser-arc hybrid welding has not been widely applied in pipeline construction than expected, despite of its high welding speed and deep penetration. In this study, internal welding was adopted to ensure the offset tolerance and sound back bead. The effect of welding parameters on bead shape was investigated at the flat position. Also tolerances for gap and edge misalignment were verified as 0.5 mm and 2.0 mm, respectively. The position welding trials were conducted at several welding positions from the flat to the overhead position in a downward direction. With the fixed welding speed, arc current for gas metal arc welding current and laser output power, adequate welding voltages for gas metal arc welding were suggested for each position.