• Title/Summary/Keyword: Output Voltage-Doubler

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Design of the self-oscillation UV flash lamp power supply and the characteristic of its operation using self-resonance of the transformer (트랜스포머의 자가 공진(Self-Resonance)특성을 이용한 자가 발진(Self-Oscillation) UV(Ultra Violet) 발생 플래시램프 전원장치설계 및 그 동작 특성)

  • Kim, Shin-Hyo;Cho, Dae-Kweon
    • Journal of Advanced Marine Engineering and Technology
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    • v.38 no.1
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    • pp.48-55
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    • 2014
  • These Xenon flashlamp power supply for Ultra Violet has converter with high voltage conversion ratio. General model is composed of transformer with high voltage conversion ratio and voltage doubler rectifier circuit. Purpose of power supply leads dielectric breakdown of Xenon flashlamp and passes current rapidly. When passing current, it has to limit current to avoid over-heat, damage of electrode and acceleration of gas oxidation which are cause of performance degradation of lamps. Generally, inductors and resistors, which are called as "Ballast," are used to limit currents. Generally, Transformer has high turn ratio to make high voltages. But we can get high voltages using the transformer with low turn ratio which is driven with self resonance. Also, an advantage of self resonance is to make a circuit simply through impedance of transformer in resonance frequency which filters output voltage. As using an unique impedance of transformer, the circuit does not need other impedance elements like the ballast. So the power supply assures high efficiency of the arc discharge.

A Charge Pump with Improved Charge Transfer Capability and Relieved Bulk Forward Problem (전하 전달 능력 향상 및 벌크 forward 문제를 개선한 CMOS 전하 펌프)

  • Park, Ji-Hoon;Kim, Joung-Yeal;Kong, Bai-Sun;Jun, Young-Hyun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.4
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    • pp.137-145
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    • 2008
  • In this paper, novel CMOS charge pump having NMOS and PMOS transfer switches and a bulk-pumping circuit has been proposed. The NMOS and PMOS transfer switches allow the charge pump to improve the current-driving capability at the output. The bulk-pumping circuit effectively solves the bulk forward problem of the charge pump. To verify the effectiveness, the proposed charge pump was designed using a 80-nm CMOS process. The comparison results indicate that the proposed charge pump enhances the current-driving capability by more than 47% with pumping speed improved by 9%, as compared to conventional charge pumps having either NMOS or PMOS transfer switch. They also indicate that the charge pump reduces the worst-case forward bias of p-type bulk by more than 24%, effectively solving the forward current problem.