• Journal of IKEEE
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• v.8 no.1 s.14
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• pp.152-159
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• 2004

In this study, we design the one-chip PWM IC with high voltage power switch (300V class LDMOSFET) for SMPS (Switching Mode Power Supply) application. Reference circuits generate constant voltage(5V) in the various of power supply and temperature condition. Error amp. is designed with large DC gain $({\simeq}65dB)$, unity frequency $({\simeq}190kHz)$ and large $PM(75^{\circ})$. comparator is designed with 2 stage. Saw tooth generators operate with 20kHz oscillation frequency. Also, we optimize drift concentration & drift length of n-LDMOSFET for design of high voltage switching device. It is shown that simulation results have the breakdown voltage of 350V. (using ISE-TCAD Simulation tool). PWM IC with power switching device is designed with 2um design rule and Bi-DMOS technology.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.24 no.3
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• pp.213-218
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• 2014

CFD flow simulation of vehicles with open sunroof and passenger window help the automotive OEM(original equipment manufacturer) to identify the low frequency noise levels in the cabin. The lock-in and lock-off phenomena observed in the experimental studies of sunroof buffeting is well predicted by CFD speed sweep calculations over the operating speed range of the vehicle. The trend of the shear layer oscillation frequency with vehicle speed is also well predicted. The peak SPL from the CFD calculation has a good compromise with the experimental value after incorporating the real world effects into the CFD model by means of artificial compressibility and damping correction. The entire process right from modeling to flow analysis as well as acoustic analysis has been performed within the single environment i.e., STAR-CCM+.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.12
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• pp.41-46
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• 2008

We report a high gain D-band(110 - 140 GHz) MMIC drive amplifier based on $0.1{\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT technology. The amplifier shows an excellent $S_{21}$ gain characteristic greater than 10 dB in a millimeterwave frequency of 110 GHz, Also the amplifier has good reflection characteristics of a $S_{11}$ of -3.5 dB and a $S_{22}$ of -6.5 dB at 110 GHz, respectively The high performances of the MMIC drive amplifier is mainly attributed to the characteristics of the MHEMTs exhibiting a maximum transconductance of 760 mS/mm, a current gain cut-off frequency of 195 GHz and a maximum oscillation frequency of 391 GHz.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1968-1970
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• 1996

We investigate a surface-micromachined polysilicon microgyroscope, whose resonant frequencies are electrostatically-tunable after fabrication. The microgyroscope with two oscillation nudes has been designed so that the resonant frequency in the sensing mode is higher than that in the actuating mode. The microgyroscope has been fabricated by a 4-mask surface-micrormachining process, including the deep RIE of a $6{\mu}m$-thick LPCVD polycrystalline silicon layer. The resonant frequency in the sensing mode has been lowered to that in actuating mode through the adjustment of an inter-plate bias voltage; thereby achieving a frequency matching at 5.8kHz under the bias voltage of 2V in a reduced pressure of 0.1torr. For an input angular rate of $50^{\circ}/sec$, an output signal of 20mV has been measured from the tuned microgyroscope under an AC drive voltage of 2V with a DC bias voltage of 3V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.8
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• pp.9-16
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• 2000

MOS transistors are fabricated and evaluated for RF IC applications such as mobile communication systems using 0.35m CMOS process. Characteristics of MOSFETs are analyzed at various channel length, width and bias conditions. From the analysis, cut-off frequency ($f_T$) is independent on channel width but maximum oscillation frequency ($f_{max}$) tends to derease as the channel width increases. As channel length increases, $f_T$ and fmax decrease. $f_T$ is 22GHz and fmax is 28GHz at its maximum value. High frequency noise performance is improved with larger channel width and smaller channel length at same bias conditions. NFmin at 2GHz is 0.45dB as a minimum value. From the evaluation, MOSFETs designed using 0.35m CMOS process demonstrated a full potential for the commercial RF ICs for mobile communication systems near 2GHz. And optimization methods of the CMOS transistors for RF applications are presented in this paper.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.227-228
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• 2006

In this paper, we introduce the design and fabrication of 60 GHz low noise amplifier MMIC for IEEE802.15.3c WPAN system. The 60 GHz LNA was designed using ETRI's $0.12{\mu}m$ PHEMT process. The PHEMT shows a peak transconductance ($G_{m,peak}$) of 500 mS/mm, a threshold voltage of -1.2 V, and a drain saturation current of 49 mA for 2 fingers and $100{\mu}m$ total gate width (2f100) at $V_{ds}$=2 V. The RF characteristics of the PHEMT show a cutoff frequency, $f_T$, of 97 GHz, and a maximum oscillation frequency, $f_{max}$, of 166 GHz. The performances of the fabricated 60 GHz LNA MMIC are operating frequency of $60.5{\sim}62.0\;GHz$, small signal gain ($S_{21}$) of $17.4{\sim}18.1\;dB$, gain flatness of 0.7 dB, an input reflection coefficient ($S_{11}$) of $-14{\sim}-3\;dB$, output reflection coefficient ($S_{22}$) of $-11{\sim}-5\;dB$ and noise figure (NF) of 4.5 dB at 60.75 GHz. The chip size of the amplifier MMIC was $3.8{\times}1.4\;mm^2$.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.7 s.361
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• pp.7-11
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• 2007

This paper presents a multiband octa-phase LC VCO for SDR receiver. Four identical LC VCOs are connected by using series coupling transistor to obtain the octa-phase signal and low phase noise characteristic. For a multiband application, a band tuning circuit that consists of a switch capacitor circuit and two MOS varactors is proposed. As the MOS switch is on/off state, the frequency range will be varied. In addition, two varactors make the VCO be immune to process variation of the oscillation frequency. The VCO is designed in 0.18-um CMOS technology, consumes 12mA current from 1.8V supply voltage and operates with a frequency band from 885MHz to 1.342GHz (41% tuning range). As driving sub-harmonic mixer, the proposed VCO covers 3 standards(CDMA 2000 1x, WCDMA, WiBro). The measured phase noise is -105dBc@100kHz, -115dBc@1MHz, -130dBc@10MHz for CDMA 2000 1x, WCDMA, WiBro respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.51-59
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• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

• International Journal of Fluid Machinery and Systems
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• v.9 no.4
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• pp.338-353
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• 2016

Information on the surge behaviors and stall stagnation boundaries for a nine-stage axial flow compressor are summarized on the basis of analytical data in comparison with those for a single-stage one, with attention to the pressure ratio effect. The general trends of the surge loop behaviors of the pressure-mass flow are similar for both compressors including the fact that the subharmonic surges tend to appear very near the stall stagnation boundaries. With respect to the nine-stage compressor, however, the mild loops in the subharmonic surges tend to be very small in size relative to the deep loops, and at the same time, insufficient surge recovery phenomenon, which is a kind of subharmonic surge, appears also far from the stagnation boundary for relatively short delivery flow-paths. The latter is found to be a rear-stage surge caused by unstalling and re-stalling of the rear stages with the front-stages kept in stall in the stalled condition of the whole compressor, which situation is caused by stage-wise mismatching in the bottom pressure levels of the in-stall multi-stage compressor. The fundamental information on the stall stagnation boundaries is given by a group of normalized geometrical parameters including relative delivery flow-path length, relative suction flow-path length, and sectional area-pressure ratio, and by another group of normalized frequency parameters including relative surge frequencies, modified reduced resonance frequencies, and modified reduced surge frequencies. Respective groups of the normalized parameters show very similar tendency of behaviors for the nine-stage compressor and the single-stage compressor. The modified reduced resonance frequency could be the more reasonable parameter suggesting the flow-induced oscillation nature of the surge phenomena. It could give the stall stagnation boundary in a more unified manner than the Greitzer's B parameter.

• Steel and Composite Structures
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• v.25 no.1
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• pp.105-116
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• 2017

This paper presents the dynamic stability study of laminated composite plates with different force combinations and aspect ratios. Optimum non-diverging stacking is obtained for certain loading combination and aspect ratio. In addition, the stability force is maximized for a definite operating frequency. A dynamic version of the principle of virtual work for laminated composites is used to obtain force-frequency relation. Since dynamic stiffness governs the divergence or flutter, an efficient optimization method is necessary for the response functional and the relevant constraints. In this way, a model based on the ant colony optimization (ACO) algorithm is proposed to search for the proper stacking. The ACO algorithm is used since it treats with large number of dynamic stability parameters. Governing equations are formulated using classic laminate theory (CLT) and von-Karman plate technique. Load-frequency relations are explicitly obtained for fundamental and secondary flutter modes of simply supported composite plate with arbitrary aspect ratio, stacking and boundary load, which are used in optimization process. Obtained results are compared with the finite element method results for validity and accuracy convince. Results revealed that the optimum stacking with stable dynamic response and maximum critical load is in angle-ply mode with almost near-unidirectional fiber orientations for fundamental flutter mode. In addition, short plates behave better than long plates in combined axial-shear load case regarding stable oscillation. The interaction of uniaxial and shear forces intensifies the instability in long plates than short ones which needs low-angle layup orientations to provide required dynamic stiffness. However, a combination of angle-ply and cross-ply stacking with a near-square aspect ratio is appropriate for the composite plate regarding secondary flutter mode.