• 한국결정성장학회지
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• 제18권4호
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• pp.155-159
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• 2008

본 연구에서는 금속 Zn 팰렛을 원료 물질로 이용하여 열화학기상증착법으로 마이크로 크기의 프리스탠딩 ZnO/Zn 코어셀 다면체 구조물을 합성하였다. 마이크로 크기로 성장된 ZnO/Zn 코어셀 다면체의 형태와 구조적인 특성을 분석하기 위해서 주사전자현미경과 투과전자현미경을 이용하였다. 성장된 마이크로 크기의 다면체는 단결정 ZnO 나노막대 배열에 의해 둘러싸인 단결정 금속 Zn로 구성되어 있음을 확인할 수 있었다. 마이크로 크기의 단결정 Zn는 육방정 결정구조로 이루어져 있으며, 표면을 구성하고 있는 c-축 배향된 ZnO 나노막대가 10 nm와 100 nm 이하의 직경과 높이를 각각 가지며 육방정 결정구조의 단결정임을 확인하였다.

• 한국결정성장학회지
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• 제5권4호
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• pp.318-331
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• 1995

Hologen lamp를 열원으로 한 적외선 집중가열 방식의 Floating zone법을 이용하여 조화융해조성(48.6 mol% $Li_2O : 51.4 mol% LiNbO_3$)의 $LiNbO_3$ 단결정과 여기에 5 mol%의 MgO를 첨가한 $LiNbO_3$:5mod%MgO 단결정을 c-축으로 성장시켰다. 고품질의 광학용 $LiNbO_3$ 결정을 성장시키기 위해 원료봉의 최적 소결조건 및 성장 분위이게 따른 원료봉/융액 계면에 대한 고찰을 하였고, 이를 바탕으로 하여 ga s flow rate, pulling rate, 원료봉과 종자정의 회전속도 등에 대한 최적의 결정성장 조건을 확립하였다. 성장된 결정에 대해서 chemical etching을 통한 etch pattern과 ICP(Inductively Coupled Plasma) 분석을 통한 조성 변동 및 불순물 Fe 함량을 조사하였고, 5 mol% MgO의 첨가에 따른 투과율과 굴절율의 변화를 관찰하였다. 또한 $LiNbO_3$의 비선형 광학특성에 대해서는 측정한 굴절율 값을 data로 하여 비선형 광학 굴절율 $n_2$를 계산하여 다른 광학물질과 비교하였고, 이와 관련하여 비선형 광학특성에 대한 전반적인 고찰을 하였다.

• Progress in Superconductivity
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• 제11권2호
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• pp.141-146
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• 2010

Phase stability diagram and boundary of a- and c-axis orientation of $SmBa_2Cu_3O_{7-y}$ (SmBCO) thin films grown by pulsed laser deposition (PLD) were reported with studies based on x-ray diffraction [1]. Four different samples are systematically analyzed: normal c-axis oriented orthorhombic $SmBa_2Cu_3O_{7-y}$, a-axis oriented $SmBa_2Cu_3O_{7-y}$, c-axis oriented orthorhombic $SmBa_2Cu_3O_{7-y}$ with $Sm_2BaCuO_5$ phase, and a mixture with c-axis oriented orthorhombic $SmBa_2Cu_3O_{7-y}$ and anomalously long-c tetragonal $SmBa_2Cu_3O_x$. Raman scattering spectroscopy equipped with polarization analysis elucidates the crystal orientation and the origin of the growth of the materials. It indicates that the technique can be used for quality control of conductor manufacturing processes as well as for enhancement of the materials properties.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.88-91
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• 2003

The crystal structure and properties of YBa$_2$Cu$_3$$O_{7-x}$(YBCO) and CeO$_2$ thin films deposited on r-plane (1(equation omitted)02) sapphire substrate by pulsed- laser deposition(PLD) have been investigated. C-axis oriented epitaxial YBCO thin films with critical temperature (Tc) of 88 K were routinely grown on (200) oriented CeO$_2$ buffer layers with thickness in the range between 20 to 80 nm. When the thickness of the (200)oriented CeO$_2$ buffer layer increases over than 80 nm, the superconducting properties of YBCO thin films on that were deteriorated. The decrease in Tc of YBCO thin films was explained by the microcrack formation in CeO$_2$ buffer layer. These results indicate that the thickness of the (200) oriented CeO$_2$ buffer layer is critical to the epitaxial YBCO thin nim growth on r-plane (1(equation omitted)02) sapphire substrate.e.

• 한국자기학회지
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• 제11권1호
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• pp.1-7
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• 2001

열연판을 모재로 하여 압연 및 열처리 공정을 조합한 공정을 3회 냉간압연법을 사용하여 최종두께 100$\mu\textrm{m}$로 제작한 방향성 규소강대에 대하여, 직류자기 특성 및 결정입자의 열처리 의존성, 결정방위 등을 조사하였다. 그 결과, (110)면이 거의 시료 전체표면에 성장하는 것이 관측되었으며, B$_{8}$은 1.9 T정도, 평균$\alpha$각은 약 4.6$^{\circ}$이었다. 향후 약간의 (001)조직의 집적도 개선이 추가된다면, 염가의 열연판을 모재로 사용하여 기존의 방향성 규소강판의 경우보다 훨씬 제조공정수를 단순화함으로써, 경제성이 우수한 방향성 극박 규소강대를 제작할 수 있는 가능성을 확인하였다.

• The Korean Journal of Ceramics
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• 제3권4호
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• pp.257-262
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• 1997

Aluminum nitride(AIN) thin films were deposited on SiO$_2$/Si substrates by reactive sputtering for the application of SAW devices. The major deposition parameters such as pressure, nitrogen fraction, rf power, substrate distance were changed to find out the optimal condition for c-axis oriented thin films on an amorphous substrate. The effects of deposition parameters on the crystal structure, residual stress, and growth morphology of thin films were characterized by XRD, SEM, and TEM. The FWHM of (002) rocking curve of the films deposited at the proper condition was lower than 2.2$^{\circ}$(C=0.93$^{\circ}$). Cross-sectional TEM showed that self-aligned structure was developed just after slightly random growth at the initial stage. The frequency characteristics of test device fabricated from AIN thin films confirmed their piezoelectric property and applicability for SAW devices.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 2000년도 Proceedings of 2000 International Nano Crystals/Ceramics Forum and International Symposium on Intermaterials
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• pp.195-214
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• 2000

The high-speed steel (shorten as HSS) consists of Fe and several kinds of transition metal carbides. The cutting tools or wear-resistant materials made from HSS experience relatively high thermal shock because a coolant such as water or oil is flowed over the surface of heated HSS. The purpose of this research is to increase the hardness, strength, fracture toughness and thermal shock resistance of HSS. A possible strategy is to incorporate a hard ceramic material with high strength in HSS matrix. This paper describes the processing, microstructure and mechanical properties of the oriented unidirectional mullite fiber/HSS composite. The unidirectional mullite fibers of 10${\mu}{\textrm}{m}$ diameter were dispersed by the ultrasonic irradiation of 38 kHz in an ethylenglycol suspension containing HSS powder of 11${\mu}{\textrm}{m}$ median size. The dried green composites with 4-68 vol% fibers were hot-pressed for 2h at 100$0^{\circ}C$ in Ar atmosphere under a pressure of 39 MPa. The higher density was achieved in the composite with a lower content of fibers. The oriented unidirectional fibers were well dispersed in the HSS matrix. The average distance between the center of fibers in the cross section was close to the value calculated from the fiber fraction. No reaction occurred at the interfaces between HSS and mullite fibers in the composites. The composite with 13.6 vol% fibers showed 100 MPa of four point flexural strength at room temperature. The thermal expansion of composite with heating was influenced by the orientation of mullite fibers.

• 한국재료학회지
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• 제21권5호
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• pp.268-272
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• 2011

Due to their novel properties, GaN based semiconductors and their nanostructures are promising components in a wide range of nanoscale device applications. In this work, the gallium nitride is deposited on c-axis oriented sapphire and porous SWCNT substrates by molecular beam epitaxy using a novel single source precursor of $Me_2Ga(N_3)NH_2C(CH_3)_3$ with ammonia as an additional source of nitrogen. The advantage of using a single molecular precursor is possible deposition at low substrate temperature with good crystal quality. The deposition is carried out in a substrate temperature range of 600-750$^{\circ}C$. The microstructural, structural, and optical properties of the samples were analyzed by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence. The results show that substrate oriented columnar-like morphology is obtained on the sapphire substrate while sword-like GaN nanorods are obtained on porous SWCNT substrates with rough facets. The crystallinity and surface morphology of the deposited GaN were influenced significantly by deposition temperature and the nature of the substrate used. The growth mechanism of GaN on sapphire as well as porous SWCNT substrates is discussed briefly.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.221.1-221.1
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• 2015

The vapor-liquid-solid (VLS) method, where the "liquid" catalytic droplets collecting atoms from vapor precursors build the solid crystal layers via supersaturation, is a ubiquitous technique to synthesize 1-dimensional nanoscale materials. However, the lack of fundamental understanding of chemical information governing the process inhibits the rational route to the structural programming. By combining the in situ or operando IR spectroscopy with post-growth high resolution electron microscopy, we show the strong correlation between the surface chemical species concentration and nanowire structures. More specifically, the critical role of surface adsorbed hydrogen, generated from the decomposition of Si2H6 precursor on the interplay between nanowire / kinking and the defect propagation is demonstrated. Our results show that adsorbed hydrogen atoms are responsible for selecting -oriented growth and indicate that a twin boundary imparts structural coherence. The twin boundary, only continuous at / kinks, reduces the symmetry of the trijunction and limits the number of degenerate directions available to the nanowire. These findings constitute a general approach for rationally engineering kinking superstructures and also provide important insight into the role of surface chemical bonding during VLS synthesis.

• 한국표면공학회지
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• 제36권2호
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• pp.141-147
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• 2003

Silicon carbide thin film was deposited in APCVD and LPCVD system with 1,3-DSB precursor 1,3-DSB is the single precursor to deposit SiC on Si at low temperature. SiC film was deposited at $850^{\circ}C$ lower than ordinary temperature ($1000~1200^{\circ}C$) in CVD process. SiC thin film glowed to high oriented (111) plane in APCVD system. In LPCVD system, SiC film groved to preferred (220) plane at same temperature. This discrepancy between preferred planes can be described by the difference of deposition mechanism. Amorphous phase and crystal defect were observed in APCVD system with the main growth mechanism of mass transport limited region. But in LPCVD system, we got the SIC film of uniform, faceted structure and high quality.