• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.182-183
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• 2008

We fabricated a pentacene thin film transistor with Poly-vinylalcohol (PVA) as a dielectric. And we used Poly(9-vinylcarbazole) (PVK) as a buffer layer to improve the electrical characteristics. PVK is a material used often host material for OLED device, as it has good film forming properties, large HOMO-LUMO(highest occupied molecular orbital-lowest unoccupied molecular orbital) bandgap. The performance of a OTFT device with PVA gate dielectric was improved by using the PVK. Field effect mobility, threshold voltage, and on-off current ratio of device with PVK layer were about 0.6 $cm^2$/Vs, -17V, and $5\times10^5$, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1030-1033
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• 2004

We herewith report for the effect of dielectric surface modification on the electrical characteristics of organic thin-film transistors (OTFTs). The kist-jm-1 as an organic molecule for the surface modification is deposited onto the surface of zirconium oxide ($ZrO_2$) gate dielectric layer. The OTFTs are elaborated on the flexible plastic substrates through 4-level mask process to yield a simple fabrication process. In this work, we also have examined the dependence of electrical performance on the interface surface state of gate dielectric/pentacene, which may be modified by chemical properties in the gate dielectric surface.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.668-672
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• 2003

In order to reach the high electrical quality of organic thin film transistors (OTFTs) such as high mobility and on-off current ratio, it is strongly desirable to study the enhancement of electrical properties in OTFTs. Here, we report the novel method of hydrogen $(H_{2})$ plasma treatment to improve electrical properties in inverted staggered OTFTs based on pentacene as active layer. To certify the effect of this method, we compared the electrical properties of normal device as a reference with those of device using the novel method. In result, the normal device as a reference making no use of this method exhibited a field effect mobility of 0.055 $cm^{2}/Vs$, on/off current ratio of $10^{3}$, threshold voltage of -4.5 V, and subthreshold slope of 7.6 V/dec. While the device using the novel method exhibited a field effect mobility of 0.174 $cm^{2}/Vs$, on/off current ratio of $10^{6}$. threshold voltage of -0.5 V, and subthreshold slope of 1.49 V/dec. According to these results, we have found the electrical performances in inverted staggered pentacene TFT owing to this novel method are remarkably enhanced. So, this method plays a key role in highly improving the electric performance of OTFTs. Moreover, this method is the first time yet reported for any OTFTs

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.247-250
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• 2001

Organic semiconductors based on vacuum-deposited films of fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. We have fabricated organic thin film transistors(OTFTs) and discuss electrical characteristics of the devices. For the gate dielectric layer, OPTMER PC403 photoacryl(JSR Co.) was spin-coated and cured at 220$^{\circ}C$. Electrical characteristics of the device were investigated, where the photoacryl dielectric layer thickness and pentacene active layer thickness were about 0.6$\mu\textrm{m}$ and 800${\AA}$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1424-1427
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• 2005

In this paper, we studied on the application of Organic Thin Film Transistors (OTFTs) to the active matrix organic light emitting diodes (AMOLED). We designed organic transistor based pixel circuits for AMOLED. The pixel circuit is consisted of two-transistor, one-capacitor and one-OLED. We report the simulation results of the pixel circuits that OLED current varied as the data line and scan line voltage. Also, we will describe the fabrication process of the Pentacene OTFTs arrays and the organic light emitting diodes. The driving results of the fabricated unit pixels and their 4x4 arrays are also presented.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.238.2-238.2
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• 2011

Organic thin film transistors (OTFTs) have been attracting considerable attention because of their potential use in low-cost, large area, electronic devices such as flexible displays, biochemical sensors, and smart cards. In past several years, gold/pentacene has been frequently used in OTFTs because of the high mobility of pentacene and the high work function of gold. To improve the performance of the OTFTs contact area doping of pentacene with p-doping materials are well known. In this work we demonstrated selectively contact area doping of pentacene with Iodine vapor. For effective doping elevated pentacene layer under the source-drain area was deposited and exposed to Iodine vapor. We got better electrical performance for elevated pentacene structure rather than planer structure with relatively high field-effect mobility.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.64-66
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• 2009

We obtained high performance of n-type organic thin film transistors (OTFTs) using a solution process. N, N' bis-(octyl-)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-$8CN_2$) in ambient air. Low work function interlayer on source/drain is needed to enhance the electron injection to low LUMO level of n-type organic semiconductor. By using self-assembled monolayer (SAM) the field-effect mobility of 0.33 $cm^2$/Vs was achieved.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.290.2-290.2
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• 2016

Recently, organic thin-film transistors have been widely researched for organic light-emitting diode panels, memory devices, logic circuits for flexible display because of its virtue of mechanical flexibility, low fabrication cost, low process temperature, and large area production. In order to achieve high performance OTFTs, increase in accumulation carrier mobility is a critical factor. Post-fabrication thermal annealing process has been known as one of the methods to achieve this by improving the crystal quality of organic semiconductor materials In this paper, we researched the properties of pentacene films with X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM) analyses as different annealing temperature in N2 ambient. Electrical characterization of the pentacene based thin film transistor was also conducted by transfer length method (TLM) with different annealing temperature in Al- and Ti-pentacene junctions to confirm the Fermi level pinning phenomenon. For Al- and Ti-pentacene junctions, is was found that as the surface quality of the pentacene films changed as annealing temperature increased, the hole-barrier height (h-BH) that were controlled by Fermi level pinning were effectively reduced.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.885-888
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• 2004

We have prepared and investigated the properties of photoinitiator-free photosensitive polyimide gate insulatos for organic thin-film transistors (OTFTs). The precursor was prepared from a dianhydride, 3,3',4,4'-Benzophenone tetracarboxylic dianhydride (BTDA) and novel aromatic diamine, 7-(3,5-diaminobenzoyloxy) coumarine (DA-CM). Photo-patternability of the polyimide precursor film and surface morphology of the films before and after photo-patterning process were investigated and negative pattern with a resolution of 50 ${\mu}m$ was obtained nicely. In addition, we have fabricated OTFTs with pentacene and photosensitive polyimide as a semiconductor and a gate insulator; respectively. According to the device geometry, the ${\mu}$, current modulation ratio and subthreshold swing of the devices were around 0.2${\sim}$0.4 $cm^2$/Vs, more than $10^5$ and around 3${\sim}$5 V/dec, respectively.

• 공업화학
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• 제23권6호
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• pp.515-520
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• 2012

이 총설에서는 개별인식 태그와 바이오센서 등에 사용가능성이 높은 실리콘 기반의 캐패시터와 유기 박막트랜지스터 소자의 제작과 차이점이 논하여 진다. 금속이나 혹은 비금속의 나노입자는 화학물질이나 혹은 바이오분자, 즉, 단백질과 올리고 DNA 등에 표면이 싸여질 수 있으며, 상응하는 목표 바이오분자가 결합되어져 있는 절연체에 자기조립 단일층을 형성할 수 있다. 단일층으로 형성된 나노입자는 정전하 기본단위로서 유기 메모리 소자의 나노 플로팅 게이트로서 역할을 하는 것이다. 특히, 바이오분자의 선택적이고 강한 결합 메카니즘을 통하여도, 메모리 캐패시터나 유기 메모리 박막트랜지스터가 성공적으로 시연되었다. 더불어, 이러한 유기 메모리 소자는 차후 유연기판의 유기전자소자 영역의 발전을 촉진할 것으로 기대된다. 또한, 유기 메모리 박막트랜지스터는 앞으로 새로운 개념의 소자로의 적용이 가능하다.