• Transactions on Electrical and Electronic Materials
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• 제6권2호
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• pp.35-38
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• 2005

Pb(Zr$_{0.8}$Ti$_{0.2}$)O$_{3}$ powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen-printing techniques on Pt/Ah03 substrates. The structural properties were examined as a function of sintering temperature. The particle size distribution of the PZT powder derived from the sol-gel process is uniform with the mean particle size of about 2.6 m. As a result of the DTA, the formation of the polycrystalline perovskite phase was observed at around $890^{circ}$CC. In the X-ray diffraction analysis, all PZT thick films showed a perovskite polycrystalline structure without a pyrochlore phase. The perovskite crystallization temperature of PZT thick films was about $890^{circ}$C. The average thickness of the PZT thick films was approximately 80-90 m.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.105-107
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• 1990

In this study, we prepared plasma polymerized thin films as changing the composition rate of the Ar/CO$_2$, 0 to 100%, for analysing the influence of CO$_2$ gas in plasma polymerization. Power source was the RF frequence (13.56MHz), the monomers were styrene and MMA (Methyl-methacrylate), and substrates were glass and KBr(or NaCl) for IR spectroscopy. The molecular structure of plasma polymerized organic thin films was examined by IR, FT-IR, Gas chromatography and so forth.

• 한국표면공학회지
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• 제29권5호
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• pp.449-453
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• 1996

In order to improve EL performance, anthracene was doped into the 8-hydroxyquinoline-aluminum (Alq$^3$) light-emitting layer of organic double layered EL cells. The EL cells were fabricated on ITO glass substrates by vacuum deposition. Doping of anthracene to the light-emitting $Alq^3$layer was performed by means of co-evaporation. The doping concentration was changed in the range of 5 to 30 wt.%. It was confirmed that anthracene doping of appropriate concentration increased the available current density and brightness of the EL cells. Carrier mobility of the $Alq^3$ layer was measured by time of flight method. The influence of anthracene doping on the cell performance was discussed.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.106-107
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• 2011

Organic Light Emitting Diode(OLED), Optical Photovotaic Device(OPV)와 같은 유기소자에서 전극으로 적용되어지고 있는 Indium Tin Oxide (ITO) 박막의 유연성을 향상시키기 위하여 중간층으로 투명도(~80%)와 전도도(~1000 S/cm)가 우수한 PEDOT:PSS(PH1000)을 적용하였다. PEDOT:PSS(PH1000)의 적용으로 인하여 ITO 박막의 유연성이 현저히 개선됨과 동시에 PEDOT:PSS(PH1000)의 우수한 전도도로 인하여 보다 얇은 ITO의 두께에서도 우수한 면 저항(25 ${\Omega}/{\square}$ ~ 220 ${\Omega}/{\square}$) 및 비저항(3.75E-4 ${\Omega}{\cdot}cm$ ~ 4.40E-4 ${\Omega}{\cdot}cm$)의 값을 측정하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1357-1358
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• 2006

Indium tin oxide (ITO) thin film is a transparent electrode, which is widely applied to solar battery, illuminators, optical switches, liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light emitting displays (OLEDs) due to its easy formation on glass substrates, goof optical transmittance, and good conductivity. ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) processis one of the suitable solutions which could solve the problems.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1915-1917
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• 2005

PZT(40/60) and PZT(60/40) powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT(40/60)/PZT(60/40) heterolayered thick films were fabricated by the screen-printing method on $Pt/Al_2O_3$ substrates. The structural properties such as DTA, X-ray diffraction and microstructure, were examined as a function of the applied pressure. In the DTA analysis, the formation of the polycrystalline perovskite phase was observed at around $880^{\circ}C$. The average thickness of the PZT heterolayered thick films which were coated five times was approximately $95-100{\mu}m$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1918-1920
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• 2005

PZT(20/80) and PZT(80/20) powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT(20/80)/PZT(80/20) heterolayered thick films were fabricated by the screen-printing method on $Pt/Al_2O_3$ substrates. The structural properties such as DTA, X-ray diffraction and microstructure, were examined as a function of the sintering temperature. In the DTA analysis, the formation of the polycrystalline perovskite phase was observed at around $880^{\circ}C$. The average thickness of the PZT heterolayered thick films was approximately $80-90{\mu}m.$

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.246-247
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• 2007

(Ba,Sr,Ca)$TiO_3$ powders, which were prepared by sol-gel method using a solution of Ba-acetate, Sr-acetate and Ca-acetate and Ti iso-propoxide, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on high purity alumina substrates. The structural and dielectric properties were investigated for various $Dy_2O_3$ doping contents. As a result of thermal analysis, the exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films, sintered at $1420^{\circ}C$ for 2h, showed the typical XRD patterns of perovskite polycrystalline structure and no pyrochlore phase was observed. The average grain size of the specimens decreased with.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.487-490
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• 1999

The Maxwell displacement current was generated from 4-octyl-4'-(5-carboxyl-pentamethyleneoxy)- azobenzene (denoted as 8A5H) monolayer Langmuir-Blodgett films prepared on Cr/Au-coated glass substrates due to trans-cis photoisomerization of 8A5H by application of alternate irradiation with UV light and Visible light. The displacement current was generated due to the trans-to-CIS photoisomerization by irradiation with ultraviolet light($\lambda_1$=360nm). Whereas the displacement current was generated in the opposite direction due to the cis-to-trans photoisomerization by photoirradiation with visible light($\lambda_2$=450nm). Finally, We concluded that Displacement current change according to power capacity photoirradiation, the more higher generate the more higher power capacity magnitude.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.313-314
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• 2005

$PbTiO_3$ and PZT(52/48) powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PT/PZT(52/40) heterolayered thick films were fabricated by the screen-printing method on Pt/$Al_2O_3$ substrates. The structural properties such as DTA, X-ray diffraction and microstructure, were examined as a amount of the PbO-$PbF_2$ flux. In the X-ray diffraction analysis, PZT(52/48) thick films showed a perovskite polycrystalline structure without a pyrochlore phase.