• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.105-107
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• 1990

In this study, we prepared plasma polymerized thin films as changing the composition rate of the Ar/CO$_2$, 0 to 100%, for analysing the influence of CO$_2$ gas in plasma polymerization. Power source was the RF frequence (13.56MHz), the monomers were styrene and MMA (Methyl-methacrylate), and substrates were glass and KBr(or NaCl) for IR spectroscopy. The molecular structure of plasma polymerized organic thin films was examined by IR, FT-IR, Gas chromatography and so forth.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.449-453
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• 1996

In order to improve EL performance, anthracene was doped into the 8-hydroxyquinoline-aluminum (Alq$^3$) light-emitting layer of organic double layered EL cells. The EL cells were fabricated on ITO glass substrates by vacuum deposition. Doping of anthracene to the light-emitting $Alq^3$layer was performed by means of co-evaporation. The doping concentration was changed in the range of 5 to 30 wt.%. It was confirmed that anthracene doping of appropriate concentration increased the available current density and brightness of the EL cells. Carrier mobility of the $Alq^3$ layer was measured by time of flight method. The influence of anthracene doping on the cell performance was discussed.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.106-107
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• 2011

Organic Light Emitting Diode(OLED), Optical Photovotaic Device(OPV)와 같은 유기소자에서 전극으로 적용되어지고 있는 Indium Tin Oxide (ITO) 박막의 유연성을 향상시키기 위하여 중간층으로 투명도(~80%)와 전도도(~1000 S/cm)가 우수한 PEDOT:PSS(PH1000)을 적용하였다. PEDOT:PSS(PH1000)의 적용으로 인하여 ITO 박막의 유연성이 현저히 개선됨과 동시에 PEDOT:PSS(PH1000)의 우수한 전도도로 인하여 보다 얇은 ITO의 두께에서도 우수한 면 저항(25 ${\Omega}/{\square}$ ~ 220 ${\Omega}/{\square}$) 및 비저항(3.75E-4 ${\Omega}{\cdot}cm$ ~ 4.40E-4 ${\Omega}{\cdot}cm$)의 값을 측정하였다.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1357-1358
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• 2006

Indium tin oxide (ITO) thin film is a transparent electrode, which is widely applied to solar battery, illuminators, optical switches, liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light emitting displays (OLEDs) due to its easy formation on glass substrates, goof optical transmittance, and good conductivity. ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) processis one of the suitable solutions which could solve the problems.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1915-1917
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• 2005

PZT(40/60) and PZT(60/40) powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT(40/60)/PZT(60/40) heterolayered thick films were fabricated by the screen-printing method on $Pt/Al_2O_3$ substrates. The structural properties such as DTA, X-ray diffraction and microstructure, were examined as a function of the applied pressure. In the DTA analysis, the formation of the polycrystalline perovskite phase was observed at around $880^{\circ}C$. The average thickness of the PZT heterolayered thick films which were coated five times was approximately $95-100{\mu}m$.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1918-1920
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• 2005

PZT(20/80) and PZT(80/20) powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT(20/80)/PZT(80/20) heterolayered thick films were fabricated by the screen-printing method on $Pt/Al_2O_3$ substrates. The structural properties such as DTA, X-ray diffraction and microstructure, were examined as a function of the sintering temperature. In the DTA analysis, the formation of the polycrystalline perovskite phase was observed at around $880^{\circ}C$. The average thickness of the PZT heterolayered thick films was approximately $80-90{\mu}m.$

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.246-247
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• 2007

(Ba,Sr,Ca)$TiO_3$ powders, which were prepared by sol-gel method using a solution of Ba-acetate, Sr-acetate and Ca-acetate and Ti iso-propoxide, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on high purity alumina substrates. The structural and dielectric properties were investigated for various $Dy_2O_3$ doping contents. As a result of thermal analysis, the exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films, sintered at $1420^{\circ}C$ for 2h, showed the typical XRD patterns of perovskite polycrystalline structure and no pyrochlore phase was observed. The average grain size of the specimens decreased with.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.487-490
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• 1999

The Maxwell displacement current was generated from 4-octyl-4'-(5-carboxyl-pentamethyleneoxy)- azobenzene (denoted as 8A5H) monolayer Langmuir-Blodgett films prepared on Cr/Au-coated glass substrates due to trans-cis photoisomerization of 8A5H by application of alternate irradiation with UV light and Visible light. The displacement current was generated due to the trans-to-CIS photoisomerization by irradiation with ultraviolet light($\lambda_1$=360nm). Whereas the displacement current was generated in the opposite direction due to the cis-to-trans photoisomerization by photoirradiation with visible light($\lambda_2$=450nm). Finally, We concluded that Displacement current change according to power capacity photoirradiation, the more higher generate the more higher power capacity magnitude.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.313-314
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• 2005

$PbTiO_3$ and PZT(52/48) powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PT/PZT(52/40) heterolayered thick films were fabricated by the screen-printing method on Pt/$Al_2O_3$ substrates. The structural properties such as DTA, X-ray diffraction and microstructure, were examined as a amount of the PbO-$PbF_2$ flux. In the X-ray diffraction analysis, PZT(52/48) thick films showed a perovskite polycrystalline structure without a pyrochlore phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.359-360
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• 2005

PZT(20/80) and PZT(80/20) powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT(20/80)/PZT(80/20) heterolayered thick films were fabricated by the screen-printing method on Pt/$Al_2O_3$ substrates. The structural properties such as DTA, X-ray diffraction and microstructure, were examined as a amount of the excess PbO. In the DTA analysis, the formation of the polycrystalline perovskite phase was observed at around $880^{\circ}C$. The average thickness of the PZT heterolayered thick films was approximately $80{\mu}m$.