• Transactions on Electrical and Electronic Materials
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• 제10권4호
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• pp.107-110
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• 2009

In this study, the Hall effect has been studied in n-GaAs samples characterized by V/IIl growth ratios of 25, 50 and 100 and prepared by metal organic chemical vapor deposition. For the Hall effect measurements, the grown samples were cut to a size of 1${\times}$1 cm. The measurements were carried out at room temperature, using Indium contact metal at the four corners of the samples. According to the experimental results, the Schottky effect was not ovservation. Also for the n-GaAs sample of V/Ill 100 ratio the electron drift velocity was very high.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.973-974
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• 2008

Optically transparent and flexible electronic circuits and displays are attractive for next-generation visual technologies, including windshield displays, head-mounted displays, and transparent screen monitors. Here we report on the fabrication of transparent transistors and circuits based on the combination of nanoscopic dielectrics and organic, inorganic, or hybrid semiconductors. Furthermore, the first demonstration of a transparent and flexible AMOLED display driven solely by $In_2O_3$ nanowire transistors (NWTs) is reported. The display region exhibits an optical transmittance of ~35% and a green peak luminance of ${\sim}300\;cd/m^2$. These results indicate that NWT-based drive circuits are attractive for fully transparent display technologies.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 동계학술연구발표회 및 스핀트로닉스와 나노물리에관한 국제심포지움
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• pp.17-17
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• 2007

• 한국고분자학회지:고분자과학과기술
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• 제21권6호
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• pp.528-536
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• 2010

• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 2001년도 가을 학술발표회 논문집
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• pp.29-32
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• 2001

Conductive polymers(CPs) are a relatively new class of organic materials displaying as their foremost property a high conductivity combined with very light weight, flexibility and reasonably facile processability[1]. Due to their high conductivity/weight ratio, they have recently evinced much interest in potential application as EMI shielding screens, coatings or jackets for flexible conductors, rechargeable batteries and as possible substitutes for metallic conductors or semiconductors in wide variety of electrical devices[2]. (omitted)

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.315-317
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• 2009

We report the preparation of novel nanofiber organic semiconductors that can be utilized as the active channel materials in the field effect transistors (FETs). The nanofibers produced by the electrospinning reveals the excellent performances (mobility ~ 0.16 $cm^2$/V) due to thier highly ordered molecular packing in the polymer matrix.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.158-159
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• 2006

The resistance-capacitance (RC) delay of signals through interconnection materials becomes a big hurdle for high speed operation of semiconductors which contain multilayer interconnection layers. In order to reduce the RC delay, low-k materials will be used for inter-metal dielectric (IMD) materials. We have developed self-consistent simulation tool that includes neutral-species transport model, based on the relaxation continuum (RCT) model. We present the parametric study of the modeling results of a two-frequency capacitively coupled plasma (2f-CCP) with $N_2/H_2$ gas mixture that is known as promising one for organic low-k materials etching. We include the neutral transport model as well as plasma one in the calculation. The plasma and neutrals are calculated self-consistently by iterating the simulation of both species till a spatiotemporal steady state profile could be obtained.

• Nuclear Engineering and Technology
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• 제49권6호
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• pp.1354-1357
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• 2017

Characterization of special nuclear material may be performed using energy spectroscopy of either the neutron or gamma-ray emissions from the sample. Gamma-ray spectroscopy can be performed relatively easily using high-resolution semiconductors such as high-purity germanium. Neutron spectroscopy, by contrast, is a complex inverse problem. Here, results are presented for $^{252}Cf$ and PuBe energy spectra unfolded using a single EJ309 organic scintillator; excellent agreement is observed with the reference spectra. Neutron energy spectroscopy is also possible using a two-plane detector array, whereby time-of-flight kinematics can be used. With this system, energy spectra can also be obtained as a function of position. Spatial-dependent energy spectra are presented for neutron and gamma-ray sources that are in excellent agreement with expectations.

• 한국염색가공학회지
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• 제35권4호
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• pp.274-283
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• 2023

Conductive polymers are polymers that conduct electricity like metal conductors. Unlike typical organic polymers, they are polymers that have the electrical, magnetic, and optical properties of metals or semiconductors. For Example, these conductive polymers include Polypyrrole (PPy), Polyaniline (PANI), and Polythiophene (PT). On the other hand, Insulating polymers do not conduct electricity well while providing insulation, which is the opposite of conductivity. With the exception of conductive polymers, most polymers are non-conductors. Insulating polymers include polyimide (PI), polystyrene (PS), and poly(vinyl alcohol) (PVOH, PVA, or PVAl). Although many different polymers exist, we have simply illustrated the properties and recent developments of conductive and insulating polymers, which have opposite properties.

• 한국전기전자재료학회논문지
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• 제31권3호
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• pp.129-134
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• 2018

Herein, we report the manufacture of high-performance, ambipolar organic field-effect transistors (OFETs) and complementary-like electronic circuitry based on a blended, polymeric, semiconducting film. Relatively high and well-balanced electron and hole mobilities were achieved by incorporating a small amount of ionic additives. The equivalent P-channel and N-channel properties of the ambipolar OFETs enabled the manufacture of complementary-like inverter circuits with a near-ideal switching point, high gain, and good noise margins, via a simple blanket spin-coating process with no additional patterning of each active P-type and N-type semiconductor layer.