• 대한화학회지
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• 제50권1호
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• pp.60-64
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• 2006

구조의 유기-무기 혼성화합물 Cu2(OH)3(CH3COO)·H2O를 선구물질로 사용하여 Cu2O를 합성하였다. 75oC의 수용액에서 Cu2(OH)3(CH3COO)·H2O를 글루코오스로 환원시켜서 정육면체 Cu2O를 합성하였다. 선구물질과 글루코오스의 효과를 조사하였다. Cu2(OH)3(CH3COO)·H2O의 구조는 균일한 크기의 Cu2O를 만드는데 중요한 역할을 한다.

• Journal of Microbiology and Biotechnology
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• 제19권5호
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• pp.439-446
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• 2009

The biosynthesis study of antibiotics saframycin (SFM) in Streptomyces lavendulae and safracin (SAC) in Pseudomonas fluorescens demonstrated that 3-hydroxy-S-methyl-O-methyltyrosine (3hSmOmTyr), a nonproteinogenic amino acid, is the precursor of the tetrahydroisoquinoline molecular core. In the biosynthetic gene cluster of SAC/SFM, sacD/sfmD encodes a protein with high homology to each other but no sequence similarity to other known enzymes; sacF/sfmM2 and sacG/sfmM3 encode methyltransferases for C-methylation and O-methylation; and sacE/sfinF encodes a small protein with significant sequence similarity to the MbtH-like proteins, which are frequently found in the biosynthetic pathways of non ribosomal peptide antibiotics and siderophores. To address their function, the biosynthetic cassette of 3h5mOmTyr was heterologously expressed in S. coelicolor and P. putida, and an in-frame deletion and complementation in trans were carried out. The results revealed that (i) SfmD catalyzes the hydroxylation of aromatic rings; (ii) sacD/sacF/sacG in the SAC gene cluster and sfmD/sfmM2/sfmM3 in the SFM cluster are sufficient for the biosynthesis of 3h5mOmTyr; and (iii) the mbtH-like gene is not required for the biosynthesis of the 3h5mOmTyr precursor.

• 공업화학
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• 제16권5호
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• pp.628-634
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• 2005

Zirconia-alumina 고분자 전구체가 유기물-무기물 용액 방법으로 zirconium acetylacetonate (ZA), aluminium nitrate (AN), polyethylene glycol (PEG), 그리고 에탄올을 이용하여 제조되었다. 고분자 전구체의 열적 특성 및 점도를 시차주사열용량분석기(DSC), 열중량분석기(TGA), 그리고 동적유변측정기를 이용하여 측정하였다. 부피 팽창을 동반하는 강렬한 발열반응이 $140^{\circ}C$에서 일어났다. 고분자 전구체의 부피팽창은 금속물질중에 유기물의 분해반응과 금속양이온과 PEG 사이의 반응에 의한 것이다. 이들 분해반응과 금속양이온과 PEG 사이의 반응에 대한 여부를 적외선분광기(FT-IR)와 $^{13}C$ solid-NMR 결과로부터 확인하였다. 고분자 전구체의 온도가 증가함에 따라 N-O, O-H, 그리고 C=C에서의 피이크 강도가 감소하였다. 이 결과는 강렬한 발열반응시 금속 물질의 분해반응과 PEG와 금속양이온의 반응이 일어났음을 나타내는 것이다. 다공성 파우더는 $800^{\circ}C$에서 2 h 동안 소결과정을 거쳐 결정성 $ZrO_2-Al_2O_3$ 복합체가 되었다.

• Bulletin of the Korean Chemical Society
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• 제30권1호
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• pp.114-118
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• 2009

A new Zn/O single source precursor, TMEDA-Zn$(eacac)_2$, has been synthesized by using N, N, N’, N’-tetramethylethylendiamine (TMEDA), sodium ethyl-acetoacetate, and $ZnCl_2$. From this organometallic precursor, ZnO thin films have been successfully grown on Si (100) substrates through the metal organic chemical vapor deposition (MOCVD) method at relatively mild conditions in the temperature range of 390~430 ${^{\circ}C}$. The synthesized ZnO films have been found to possess average grain sizes of about 70 nm with an orientation along the c-axis. The precursor and ZnO films are characterized through infrared spectroscopy, nuclear magnetic resonance spectroscopy, EI-FAB-spectroscopy, elemental analyses, thermal analysis, X-ray diffraction, and field emission scanning electron microscopic analyses.

• 한국초전도ㆍ저온공학회논문지
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• 제7권3호
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• pp.5-8
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• 2005

Superconducting YBCO films were successfully fabricated by MOD process using F-free Cu precursor solution. In this study. a chemically modified precursor solution for MOD Processing was synthesized using metal-organic salts and F-free Cu precursor. It was shown that crack-free and uniform precursor films were formed after calcination in humidified oxygen atmosphere. Less than 3 hours are required to finish the calcination process. XRD measurement shows that $BaF_2,\;CuO,\;Y_2O_3$ are major constituent of precursor films. Furthermore. YBCO films without any secondary phases were successfully fabricated after annealing in wet $Ar/O_2$ prepared on a $LaA1O_3$ single crystal substrate $(10mm{\times}10mm)$ gives transport Ic of 10A at 77K. This chemical modification approach is a possible candidate for improving MOD-processing of YBCO coated conductor.

• 한국세라믹학회지
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• 제34권9호
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• pp.993-1001
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• 1997

The (0.8PPV+0.2DMPPV) copolymer and silica/borosilicate composites were synthesized by sol-gel process. The organic-inorganic hybrid solution was prepared by using of (0.8PPV+0.2DMPPV) copolymer precursor solution as a raw material for organic components and TEOS and TMB for glass components. Then by drying the solution in vacuum at 5$0^{\circ}C$ for 7days and subsequent heat treatment in vacuum at 15$0^{\circ}C$~30$0^{\circ}C$ for 2h~72h with heating rate of 0.2$^{\circ}C$/min and 1.8$^{\circ}C$/min, the organic-inorganic composites were synthesized. Microstructural evolution of the composites was characterized by DSC, IR spectrocopy, UV/VIS spectroscopy, and TEM. Elimination of the polymer precursor and degradation of the polymer were observed by DSC and Si-O and trans C=C absorption peaks were identified by IR spectra. The polymer was found to be successfully incorporated into the glass matrix and it was confirmed by the absorption peaks from the polymer in the UV/VIS spectra and the TEM results. The absorption peak of the composites was found to shift toward short wavelength side compared to that of the pure polymer and the amount of the blue shift increased with increasing the heat treatment temperature and heat treatment time and with decreasing the heating rate.

• 한국재료학회지
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• 제18권6호
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• pp.302-306
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• 2008

Polycrystalline germanium (Ge) thin films were grown by metal organic chemical vapor deposition (MOCVD) using tetra-allyl germanium [$Ge(allyl)_4$], and germane ($GeH_4$) as precursors. Ge thin films were grown on a $TiN(50nm)/SiO_2/Si$ substrate by varying the growth conditions of the reactive gas ($H_2$), temperature ($300-700^{\circ}C$) and pressure (1-760Torr). $H_2$ gas helps to remove carbon from Ge film for a $Ge(allyl)_4$ precursor but not for a $GeH_4$ precursor. $Ge(allyl)_4$ exhibits island growth (VW mode) characteristics under conditions of 760Torr at $400-700^{\circ}C$, whereas $GeH_4$ shows a layer growth pattern (FM mode) under conditions of 5Torr at $400-700^{\circ}C$. The activation energies of the two precursors under optimized deposition conditions were 13.4 KJ/mol and 31.0 KJ/mol, respectively.

• Journal of Microbiology and Biotechnology
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• 제4권3호
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• pp.204-209
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• 1994

The synthesis of N-(benzyloxycarbonyl)-L-aspartyl-L-phenylalanine methylester (Z-APM), a precursor of aspartame, from N-(benzyloxycarbonyl)-L-aspartic acid (Z-Asp) and L-phenylalanine methylester hydrochlolide($L-PM\cdot HCI$) was investigated in a saturated-ethylacetate single phase system using immobilized thermolysin. Among the various supports tested, glyceryl-CPG was found to be most efficient for retaining enzyme activity. The enzyme immobilized onto glyceryl-CPG also showed the highest activity for Z-APM synthesis in saturated ethyl acetate. Z-APM conversion yield in saturated ethylacetate was half of that obtained in an ethyl acetate-buffer two-phase system under the same reaction conditions. However, as the mole ratio of $L-PM \cdot HCI$ to Z-Asp was increased to 4.0, the conversion yield reached 95 %. When continuous synthesis of Z-APM was canied out in a plug flow reactor (PFR) with 80 mM of L-PMㆍHCI and 20 mM of Z-Asp in saturated ethylacetate (pH 5.5), more than 95 % of Z-Asp was converted to Z-APM with a space velocity of 1.16 $hr^{-1} at 40^{\circ}C$. Although the operational stability in PFR was reduced rapidly, more than 80% of initial activity was maintained in CSTR even after a week of operation.

• Bulletin of the Korean Chemical Society
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• 제24권7호
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• pp.953-956
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• 2003

Hexagonal GaN (h-GaN) films have been grown on Si(111) substrates by metal organic chemical vapor deposition using the azidodiethylgallium methylamine adduct, Et₂Ga(N₃)·NH₂Me, as a new single precursor. Deposition was carried out in the substrate temperature range 385-650 °C. The GaN films obtained were stoichiometric and did not contain any appreciable amounts of carbon impurities. It was also found that the GaN films deposited on Si(111) had the [0001] preferred orientation. The photoluminescence spectrum of a GaN film showed a band edge emission peak characteristic of h-GaN at 378 nm.

• Bulletin of the Korean Chemical Society
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• 제34권5호
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• pp.1473-1476
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• 2013

Solution-based deposition of $CuIn_xGa_{1-x}Se_2$ (CIGSe) thin films is well known non-vacuum process for the fabrication of CIGSe solar cells. However, due to the usage of organic chemicals in the preparation of CIG precursor solutions, the crystallization of the polycrystalline CIGSe and the performance of CIGSe thin film solar cells were significantly affected by the carbon residues from the organic chemicals. In this work, we have tried to eliminate the carbon residues in the CIG precursor thin films efficiently by using soft-annealing process. By adjusting soft-annealing temperature, it is possible to control the amount of carbon residues in CIG precursor thin films. The reduction of the carbon residues in CIG precursors by high temperature soft-annealing improves the grain size and morphology of polycrystalline CIGSe thin films, which are also closely related with the electrical properties of CIGSe thin film solar cells.