• Current Photovoltaic Research
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• v.4 no.3
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• pp.93-97
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• 2016

Light-emitting chromophores have been separated from silica spheres modified the surface with 3-(trimethoxysilyl)propylmethacrylate (TMSPM). The photoluminescence characteristics of the chromophores were investigated with various excitation wavelengths. The TMSPM was attached to the surface of silica spheres at $75^{\circ}C$. Large number of round shaped particles of the TMSPM was on the surface of silica spheres after 3 h reaction. The TMPSM was completely covered on the surface of the spheres after 6 h reaction. The surface modified silica spheres were soaked into acetone and stored for 20 days at ambient condition. The solution color slowly changed from light yellow to deep yellow with the increase of the storing time. The FTIR absorption peaks at 3348, 2869, 2927, 1715, 1453/1377, 1296, and $1120cm^{-1}$ represent C-OH, $R-CH_3$, $R_2-CH_2$, -C=O, C-H, C=C-H, and Si-O-Si absorption, respectively. The FTIR absorption peak at $1715cm^{-1}$ representing the ester -C=O stretching vibration for silica spheres stored for 20 days was increased compared with the spheres without aging. The UV-visible absorption peaks were at 4.51 eV (275 nm) and 3.91 eV (317 nm). There were two luminescence peaks at 2.51 eV (495 nm) and 2.25 eV (550 nm). The emission at 2.51 eV was dominant peak when the excitation energy was higher than 2.58 eV, and emission at 2.25 eV became dominant peak when the excitation energy was lower than 2.58 eV.

• Journal of the Korea Institute of Military Science and Technology
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• v.1 no.1
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• pp.227-237
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• 1998

HgCdTe Is the most versatile material for the developing infrared devices. Not like III-V compound semiconductors or silicon-based photo-detecting materials, HgCdTe has unique characteristics such as adjustable bandgap, very high electron mobility, and large difference between electron and hole mobilities. Many research groups have been interested in this material since early 70's, but mainly due to its thermodynamic difficulties for preparing materials, no single growth technique is appreciated as a standard growth technique in this research field. Solid state recrystallization(SSR), travelling heater method(THM), and Bridgman growth are major techniques used to grow bulk HgCdTe material. Materials with high quality and purity can be grown using these bulk growth techniques, however, due to the large separation between solidus and liquidus line on the phase diagram, it is very difficult to grow large materials with minimun defects. Various epitaxial growth techniques were adopted to get large area HgCdTe and among them liquid phase epitaxy(LPE), metal organic chemical vapor deposition(MOCVD), and molecular beam epitaxy(MBE) are most frequently used techniques. There are also various types of photo-detectors utilizing HgCdTe materials, and photovoltaic and photoconductive devices are most interested types of detectors up to these days. For the larger may detectors, photovoltaic devices have some advantages over power-requiring photoconductive devices. In this paper we reported the main results on the HgCdTe growing and characterization including LPE and MOCVD, device fabrication and its characteristics such as single element and linear array($8{\times}1$ PC, $128{\times}1$ PV and 4120{\times}1$ PC). Also we included the results of the dewar manufacturing, assembling, and optical and environmental test of the detectors.

• Bulletin of the Korean Chemical Society
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• v.32 no.7
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• pp.2279-2285
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• 2011

The geometries, electronic structures and absorption spectra of the two organic triphenylamine-based dyes TA-St-CA and TA-DM-CA, containing identical electron donors and acceptors but the different conjugated bridges, were studied by density functional theory (DFT) at the B3LYP and PBE1PBE levels, respectively. The influence of para-orientating methoxyl units on the electronic structures and light absorption properties of the dyes and the consequent photovoltaic performance of the dye-sensitized solar cells (DSSCs) were investigated in detail. The results indicate that the introduction of the para-orientating methoxyl units into the conjugated bridge induces the increased absorption wavelength as well as the more negative EHOMO corresponding to the bigger driving force $(E_{I^-/I^-_3}-E_{HOMO})$ for dye reduction, which together improve the photovoltaic performance of TA-DM-CA, although there is a decline of the open circuit voltage caused by the more negative $E_{LUMO}$.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.

• Applied Chemistry for Engineering
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• v.24 no.1
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• pp.93-98
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• 2013

In this paper, four conducting polymers (poly[(N-butyl-phenothiazine)-sulfide] (PBPS), poly[(N-hexyl-phenothiazine)-sulfide] (PHPS), poly[(N-decyl-phenothiazine)-sulfide] (PDPS), and poly[(N-(2-ethylhexyl)-phenothiazine)-sulfide] (PEHPS)) were synthesized with a high temperature and high pressure reaction. The structures of synthesized polymers were confirmed by $^1H-NMR$ and characterized by UV-Vis, cyclic voltammetry, and GPC. From the UV-Vis absorption spectra, the ${\lambda}_{max}$ values of PBPS, PHPS, PDPS, and PEHPS were 338, 341, 340, and 334 nm, respectively and their optical band gaps were 3.11, 3.13, 3.16, and 3.05 eV, respectively. To evaluate the feasible applicability as a photovoltaic cell, the devices composed of for example, ITO/PEDOT : PSS/polymer (PBPS, PDPS) : $PC_{71}BM$ (1 : 3, w/w)/$BaF_2$/Ba/Al were fabricated using the blends of the PBPS and PDPS as a donor, and $PC_{71}BM$ as an acceptor. Then, the power conversion efficiencies (PCE) of devices were estimated as 0.076% of PBPS and 0.136% of PDPS by solar simulator.

• Bulletin of the Korean Chemical Society
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• v.33 no.6
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• pp.1861-1866
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• 2012

The new semiconducting copolymers with 4,4-dialkyl-$4H$-cyclopenta[2,1-$b$:3,4-$b^{\prime}$]dithiophene and 2,2-dimethyl-$2H$-benzimidazole units were synthesized. The fused aromatic rings, such as cyclopentadithiophene (CPDT) unit, can make the polymer backbone more rigid and coplanar, which induces long conjugation length, narrow band gap, and strong intermolecular ${\pi}-{\pi}$ interaction. The stacking ability was controlled through attaching of linear or branched alkyl side chains. The spectra of PEHCPDTMBI and PHCPDTMBI in the solid films show absorption bands with maximum peaks at 401, 759 and 407, 768 nm, and the absorption onsets at 925 and 954 nm, corresponding to band gaps of 1.34 and 1.30 eV, respectively. The devices comprising PHCPDTMBI with $TiO_X$ showed a $V_{OC}$ of 0.39 V, a $J_{SC}$ of 1.14 $mA/cm^2$, and a $FF$ of 0.34, giving a power conversion efficiency of 0.15%. The PHCPDTMBI with linear alkyl chain on CPDT shows good solubility in organic solvent with higher PCE value than that of PEHCPDTMBI.

• Applied Chemistry for Engineering
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• v.22 no.1
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• pp.15-20
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• 2011

Poly[2,3-dimethyl-5,8-dithiophene-2-yl-quinoxaline-alt-9,9-dihexyl-9H-fluorene] (PFTQT) and poly[2,3-dimethyl-5,8-dithiophen-2-yl-quinoxaline-alt-10-hexyl-10H-phenothiazine (PPTTQT) based on 2,3-dimethyl-5,8-dithiophen-2-yl-quinoxaline weresynthesized by Suzuki coupling reaction. All polymers were soluble in common organic solvents such as chloroform, chlorobenzene, o-dichlorobenzene, tetrahydrofuran (THF) and toluene. The maximum absorption wavelength and band gap of PFTQT were 440 nm and 2.30 eV, and PPTTQT were 445 nm and 2.23 eV, respectively. The HOMO and LUMO energy level of PFTQT were -6.05 and -3.75 eV, and PPTTQT were -5,89 and -3.66 eV, respectively. The organic photovoltaic devices based on the blend of polymer and PCBM (1 : 2 by weight ratio) were fabricated. Efficiencies of devices were 0.24% (PFTQT) and 0.16% (PPTTQT), respectively. The short circuit current density ($J_{sc}$), fill factor (FF), and open circuit voltage ($V_{oc}$) of the device with PFTQT were $0.97mA/cm^2$, 29% and 0.86 V, and the device based on PPTTQT were $0.80mA/cm^2$, 28% and 0.71 V, 31% and 0.71 V, respectively, under air mass (AM) 1.5 G and 1 sun condition ($100mA/cm^2$).

• Current Photovoltaic Research
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• v.4 no.2
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• pp.68-79
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• 2016

The power conversion efficiency of perovskite solar cells has remarkably increased from 3.81% to 22.1% in the past 6 years. Perovskite solar cells, which are based on the perovskite crystal structure, are fabricated using organic-inorganic hybrid materials. The advantages of these solar cells are their low cost and simple fabrication procedure. Also, they have a band gap of about 1.6 eV and effectively absorb light in the visible region. For the commercialization of perovskite solar cells in the field of photovoltaics, the issue of their long term stability cannot be overlooked. Although the development of perovskite solar cells is unprecedented, their main drawback is the degradation of the perovskite structure by moisture. This degradation is accelerated by exposure to UV light, temperature, and external bias. This paper reviews the aforesaid reasons for perovskite solar cell degradation. We also discuss the research directions that can lead to the development of perovskite solar cells with high stability.

• Applied Chemistry for Engineering
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• v.21 no.2
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• pp.137-141
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• 2010

Poly [4,7-Di-thiophen-2-yl-benzo(1,2,5)thiadiazole]-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene (PPVTBT) was synthesized by the Heck coupling reaction between 4,7-Di-thiophen-2-yl-benzo(1,2,5)thiadiazole and 1,4-bis(dodecyloxy)-2,5-divinylbenzene. The maximum absorption and band gap of PPVTBT were 550 nm and 1.74 eV, respectively. The HOMO and LUMO energy level of PPVTBT were -5.24 eV and -3.50 eV, respectively. The photovoltaic device based on the blend of PPVTBT and (6)-1-(3-(methoxycarbonyl)propyl)-{5}-1-phenyl[5,6]-$C_{61}$ (PCBM) (1 : 6 by weight ratio) was fabricated. The efficiency of device was 0.16%. The short circuit current density (Jsc), fill factor (FF) and open-circuit voltage (Voc) of the device was $0.74mA/cm^{2}$, 31% and 0.71 V, respectively, under AM 1.5 G and 1 sun condition ($100mA/cm^{2}$).

• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.63-67
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• 2010

The organic solar cells with Glass/ITO/PEDOT:PSS/P3HT:PCBM/Al structure were fabricated using regioregular poly (3-hexylthiophene) (P3HT) polymer:(6,6)- phenyl $C_{61}$-butyric acid methyl ester (PCBM) fullerene polymer as the bulk hetero-junction layer. The P3HT and PCBM as the electron donor and acceptor materials were spin casted on the indium tin oxide (ITO) coated glass substrates. The optimum mixing concentration ratio of photovoltaic layer was found to be P3HT:PCBM = 4:4 in wt%, indicating that the short circuit current density ($J_{SC}$), open circuit voltage ($V_{OC}$), fill factor (FF) and power conversion efficiency (PCE) values were about 4.7 $mA/cm^2$, 0.48 V, 43.1% and 0.97%, respectively. To investigate the effects of the post annealing treatment, as prepared organic solar cells were post annealed at the treatment time range from 5min to 20min at $150^{\circ}C$. $J_{SC}$ and $V_{OC}$ increased with increasing the post annealing time from 5min to 15min, which may be originated from the improvement of the light absorption coefficient of P3HT and improved ohmic contact between photo voltaic layer and Al electrode. The maximum $J_{SC},\;V_{OC}$, FF and PCE values of organic solar cell, which was post annealed for 15min at $150^{\circ}C$, were found to be about 7.8 $mA/cm^2$, 0.55 V, 47% and 2.0%, respectively.