• Title/Summary/Keyword: Organic light-emitting diodes(OLEDs)

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Salen-Aluminum Complexes as Host Materials for Red Phosphorescent Organic Light-Emitting Diodes

  • Bae, Hye-Jin;Hwang, Kyu-Young;Lee, Min-Hyung;Do, Young-Kyu
    • Bulletin of the Korean Chemical Society
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    • v.32 no.9
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    • pp.3290-3294
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    • 2011
  • The properties of monomeric and dimeric salen-aluminum complexes, [salen(3,5-$^tBu)_2$Al(OR)], R = $OC_6H_4-p-C_6H_6$ (H1) and R = [salen(3,5-$^tBu$)AlOPh]C$(CH_3)_2$ (H2) (salen = N,N'-bis-(salicylidene)-ethylenediamine) as host layer materials in red phosphorescent organic light-emitting diodes (PhOLEDs) were investigated. H1 and H2 exhibit high thermal stability with decomposition temperature of 330 and $370^{\circ}C$. DSC analyses showed that the complexes form amorphous glasses upon cooling of melt samples with glass transition temperatures of 112 and $172^{\circ}C$. The HOMO (ca. -5.2~-5.3 eV) and LUMO (ca. -2.3~-2.4 eV) levels with a triplet energy of ca. 1.92 eV suggest that H1 and H2 are suitable for a host material for red emitters. The PhOLED devices based on H1 and H2 doped with a red emitter, $Ir(btp)_2$(acac) (btp = bis(2-(2'-benzothienyl)-pyridinato-N,$C^3$; acac = acetylacetonate) were fabricated by vacuum-deposition and solution process, respectively. The device based on vacuum-deposited H1 host displays high device performances in terms of brightness, luminous and quantum efficiencies comparable to those of the device based on a CBP (4,4'-bis(Ncarbazolyl) biphenyl) host while the solution-processed device with H2 host shows poor performance.

Effect of the oxygen flow ratio on the structural and electrical properties of indium zinc tin oxide (IZTO) films prepared by pulsed DC magnetron sputtering

  • Son, Dong-Jin;Nam, Eun-Kyoung;Jung, Dong-Geun;Ko, Yoon-Duk;Choi, Byung-Hyun;Kim, Young-Sung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.168-168
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    • 2010
  • Transparent conduction oxides (TCOs) films is extensively reported for optoelectronic devices application such as touch panels, solar cells, liquid crystal displays (LCDs), and organic light emitting diodes(OLEDs). Among the many TCO film, indium tin oxide(ITO) is in great demand due to the growth of flat panel display industry. However, indium is not only high cost but also its deposits dwindling. Therefore, many studies are being done on the transparent conductive oxides(TCOs). We fabricated a target of IZTO(In2O3:ZnO:SnO2=70:15:15 wt.%) reduced indium. Then, IZTO thin films were deposited on glass substrates by pulsed DC magnetron sputtering with various oxygen flow ratio. The substrate temperature was fixed at the room temperature. We investigated the electrical, optical, structural properties of IZTO thin films. The electrical properties of IZTO thin films were dependent on the oxygen partial pressure. As a result, the most excellent properties of IZTO thin films were obtained at the 3% of oxygen flow rate with the low resistivity of $7.236{\times}10^{-4}{\Omega}cm$. And also the optical properties of IZTO thin films were shown the good transmittance over 80%. These IZTO thin films were used to fabricated organic light emitting diodes(OLEDs) as anode and the device performances studied. The OLED with an IZTO anode deposited at optimized deposition condition showed good brightness properties. Therefore, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

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Characteristics of the Adhesion Layer for the Flexible Organic Light Emitting Diodes (플렉시블 OLED 소자 제작을 위한 접합층 특성 연구)

  • Cheol-Hee Moon
    • Journal of Adhesion and Interface
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    • v.24 no.3
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    • pp.86-94
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    • 2023
  • To fabricate all-solution-processed flexible Organic Light-Emitting Diodes (OLEDs), we demonstrated a bonding technology using a polyethyleneimine (PEI) as an adhesion layer between the two substrates. As the adhesion layer requires not only a high adhesion strength, but also a high current density, we have tried to find out the optimum condition which meets the two requirements at the same time by changing experimental factors such as PEI concentration, thickness of the layer and by mixing some additives into the PEI. The adhesion strength and the electrical current density were investigated by tensile tests and electron only device (EOD) experiments, respectively. The results showed that at higher PEI concentration the adhesion strength showed higher value, but the electrical current through the PEI layer decreased rapidly due to the increased PEI layer thickness. We added Sorbitol and PolyEthyleneGlycohol (PEG) into the 0.1 wt% PEI solution to enhance the adhesion and electrical properties. With the addition of the 0.5 wt% PEG into the 0.1 wt% PEI solution, the device showed an electrical current density of 900 mA/cm2 and a good adhesion characteristic also. These data demonstrated the possibility of fabricating all-solution-processed OLEDs using two-substrate bonding technology with the PEI layer as an adhesion layer.

Dielecric properties depending on applied voltage of OLEDs with Hole Injection Layer (유기발광소자에서 정공주입층의 인가전압에 따른 유전특성)

  • Cha, Ki-Ho;Lee, Young-Hwan;Kim, Won-Jong;Lee, Jong-Yong;Kim, Gwi-Yeol;Hong, Jin-Woong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.309-310
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    • 2006
  • We studied dielectric properties of OLEDs(Organic Light-emitting Diodes) depending on applied voltage (AC) of PTFE(Polytetrafluoroethylene), material of hole injection layer in structure of ITO/hole injection layer (PTFE)/emitting layer, Alq3(Tris(8-hydroxyquinolibe) Alumin)/Al. PTFE is deposited 2 [nm] as rate of 0.2~03 [${\AA}/s$] and $Alq_3$ is deposited 100 [nm] as rate of 1.3~1.5 [${\AA}/s$] m high vacuum ($5{\times}10^{-6}$[torr]). In result of these studies, we can know dielectric properties of OLEDs. Impedance is decreased depending on applied voltage variation, dielectric loss showed peak in specified voltage and showed cole-cole plot of a specimen.

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A Study for Luminescence Properties of OLEDs Using $Alq_2-Ncd$ as an Emitting Layer ($Alq_2-Ncd$를 이용한 유기 전기 발광 소자의 발광특성에 관한 연구)

  • Yoon, Hee-Chan;Shin, Hoon-Kyu;Kim, Byoung-Sang;Kim, Chung-Kyun;Kwon, Young-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.518-521
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    • 2002
  • New luminescent material, 6,11-Dihydroxy-5,12-naphthacenedione$(Alq_2-Ncd)$ was synthesized. And extended efforts have been made to obtain high-performance electro-luminescent(EL) devices, since the first report of organic light-emitting diodes(OLEDs) based on tris-(8-hydroxy-quinoline)aluminum$(Alq_3)$ Current-voltage characteristics, brightness-voltage characteristics, luminous efficiency and quantum efficiency were measured at room temperature. The maximum wavelength of the EL is at around 504nm and the brightness is up to $2702[cd/m^2]$ with the maximum efficiency up to 3.91 [1m/W]. This study indicates not only the sterical effect but also some other effect would be responsible for the change of the emission wavelength.

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Electrical Characteristics on the Variation of Thickness and Deposition Rate in Organic Layer of OLEDs (유기발광 소자에서 유기층의 두께 및 증착속도 변화에 따른 전기적 특성)

  • Lee, Young-Hwan;Kim, Weon-Jong;Yang, Jae-Hoon;Shin, Jong-Yeol;Kim, Tae-Wan;Hong, Jin-Woong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.4
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    • pp.362-366
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    • 2006
  • OLEDs(Organic Light Emitting Diodes) are attractive as alternative display components because of their relative merits of being self-emitting, having large intrinsic viewing angle and fast switching speed. But because of their relatively short history of development, much remains to be studied in terms of their basic device physics and design, manufacturing techniques, stability and so on. We investigated electrical properties of N, N-diphenyl-N, N bis (3-methyphenyl-l,1'-biphenyl-4,4'-diamine (TPD) and tris-8-hydroxyquinoline aluminum$(Alq_3)$ when their thicknesses were changed variedly from 3:7 to 5:5 of their thickness ratios. And we also studied properties of OLED depend on their deposition rate between $0.05{\sim}0.2$ nm/s.

Highly Efficient Multi-Functional Material for Organic Light-Emitting Diodes; Hole Transporting Material, Blue and White Light Emitter

  • Kim, Myoung-Ki;Kwon, Jong-Chul;Hong, Jung-Pyo;Lee, Seong-Hoon;Hong, Jong-In
    • Bulletin of the Korean Chemical Society
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    • v.32 no.spc8
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    • pp.2899-2905
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    • 2011
  • We have demonstrated that TPyPA can be used as an efficient multi-functional material for OLEDs; hole transporting material (HTL), blue and white-light emitter. The device based on TPyPA as the HTL exhibited an external quantum efficiency of 1.7% and a luminance efficiency of 4.2 cd/A; these values are 40% higher than the external quantum efficiency and luminance efficiency of the NPD-based reference device. The device based on TPyPA as a blue-light emitter exhibited an external quantum efficiency of 4.2% and a luminance efficiency of 5.3 $cdA^{-1}$ with CIE coordinates at (0.16, 0.14), the device based on TPyPA as a white-light emitter exhibited an external quantum efficiency of 3.2% and a luminance efficiency of 7.7 $cdA^{-1}$ with CIE coordinates at (0.33, 0.39). Also, TPyPA-based organic solar cell (OSC) exhibited a maximum power conversion efficiency of 0.35%. TPyPA-based organic thin-film transistors (OTFTs) exhibited highly efficient field-effect mobility (${\mu}_{FET}$) of $1.7{\times}10^{-4}cm^2V^{-1}s^{-1}$, a threshold voltage ($V_{th}$) of -15.9 V, and an on/off current ratio of $8.6{\times}10^3$.

Conduction properties of phosphorescent emitting layers and their application to optimizing white OLEDs

  • Baek, Heume-Il;Noh, Seung-Uk;Lee, Hyun-Koo;Suman, C.K.;Lee, Chang-Hee
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1055-1055
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    • 2009
  • The mobility of charge carriers has been investigated in the pristine and phosphorescent materials doped host materials using time-of-flight photoconductivity technique. The field and temperature dependences of the mobility were analyzed with the Gaussian disorder model. Based on these results, we optimized white organic light emitting diodes (WOLEDs) consisting of multi-emitting layers doped with phosphorescent and fluorescent dopants. Especially, we studied the effect of each emitter position and an interlayer on the device characteristics of WOLEDs.

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Organic Thin-Film Transistor-driven Current Programming Pixel Circuit for Active-Matrix OLEDs (Organic TFT를 이용한 AM-OLED 구동용 Pixel 보상회로 설계에 관한 연구)

  • Shin, A-Ram;Yoon, Bong-No;Seo, Jun-Ho;Bae, Young-Seok;Sung, Man-Young
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.335-336
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    • 2007
  • A new current-programmed pixel circuit for activematrix organic light emitting diodes (AMOLEDs), based on Organic TFTs (OTFTs), is proposed and verified by SPICE simulations. The simulation results show that the proposed pixel circuit, which is a current mirror structure consisting of five Organic TFTs and one capacitor, has reliable linear characteristics between input current and output OLED current. Also, the threshold voltage degradation of Organic TFTs due to long time operation stress is well compensated to reliable values.

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Luminance Properties of Organic Light Emitting Diodes Using Zn-Complexes (Zn-Complexes를 이용한 OLEDs의 발광 특성 연구)

  • Jang, Yoon-Ki;Kim, Doo-Seok;Kim, Byoung-Sang;Kwon, Oh-Kwan;Lee, Burm-Jong;Kwon, Young-Soo
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.1890-1892
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    • 2005
  • Recently, high luminance and high efficiency were realized in OLEDs with multilayer structure including emitting materials such as metal-chelate complexes. New luminescent materials, [2- (2-hydroxyphenyl)-quinoline] (Zn(HPB)q), [(1,10-phenanthroline)- (8-hydroxyquinoline)] Zn(Phen)q was synthesized. Zn-Complexes have low molecular compound and thermal stability. The ionization potential(IP) and electron affinity(EA) of Zn-complexes were measured by cyclic-voltammetry(CV). The fundamental structure of the OLEDs was $ITO/{\alpha}$-NPD/Zn-Complex/Al and then we made device structure rightly in energy band gap. We using Zn(Phen)q as emitting layer and Zn(HPB)q as electron transport layer. We measured current density-voltage, luminance-voltage characteristics.

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