• Korean Chemical Engineering Research
• /
• v.46 no.2
• /
• pp.310-315
• /
• 2008

Organic-inorganic hybrid solutions were made using glycidoxypropyl trimethoxysilane (GPTMS) and vinyltriethoxysilane (VTES) as starting materials by sol-gel method. Photochromic coating solutions were prepared by mixing the solution of photochromic dye (spiropyran) dissolved in ethylacetate with the organic-inorganic hybrid solutions. Photochromic films were prepared on polycarbonate sheets by spin coating and cured for 2 h at $100^{\circ}C$. The resulting films exhibited a reversible color change upon irradiation with UV light from transparent to blue. The color-fading speed and pencil hardness of the coating films increased with increasing the GPTMS content in the coating solutions.

• Applied Chemistry for Engineering
• /
• v.29 no.4
• /
• pp.484-487
• /
• 2018

In this paper, the optical and electrical properties of ytterbium films were studied for water vapor transmission rate (WVTR) analysis of encapsulation films used in organic electronic devices. Ytterbium thin films show a wide range of light transmittance (70-10%) and resistivity ($6.0-0.16m{\Omega}{\cdot}cm$) depending on various film thicknesses (20-100 nm). The Yb thin films were oxidized with moisture and its transmittance and resistance changed in real time. As a result, the WVTR of parylene and aluminum nitride (AlN) laminated thin encapsulation film was measured to be $4.3{\times}10^{-3}g/m^2{\cdot}day$ with the 25 nm thick ytterbium thin film.

• Korean Chemical Engineering Research
• /
• v.46 no.1
• /
• pp.112-117
• /
• 2008

Organic-inorganic hybrid solutions were prepared via sol-gel method using glycidoxypropyl trimethoxysilane (GPTMS) and methyl triethoxysilane (MTES) as starting precursors at a molar ratio of 1:1. The photochromic coating solutions were prepared by mixing the solutions of photochromic dye (spiropyran) dissolved in ethylacetate (EA) with the organic-inorganic hybrid solutions. Photochromic films were prepared on polycarbonate substrate by spin coating and cured for 2 h at $100^{\circ}C$. The resulting films exhibited a reversible color change upon irradiation with UV light. The photochromic properties of the films showed that the color-fading speed increases with increasing the EA content in the coating solutions.

• ETRI Journal
• /
• v.27 no.4
• /
• pp.405-410
• /
• 2005

High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin films, deposited by PLD on a PES substrate at room temperature and an oxygen pressure of 15 mTorr, have a low electrical resistivity of $2.9{\times}10^{-4}{\Omega}cm$ and a high optical transmittance of 84 % in the visible range. They were used as the anode in organic light-emitting diodes (OLEDs). The maximum electro luminescence (EL) and current density at 100 $cd/m^2$ were 2500 $cd/m^{2}$ and 2 $mA/m^{2}$, respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.160-160
• /
• 2010

Organic electronic devices require a passivation layer to ensure sufficient lifetime. Specifically, flexible organic electronic devices need a barrier layer that transmits less than $10^{-6}\;g/m^2/day$ of water and $10^{-5}\;g/m^2/day$ of oxygen. To increase the lifetime of organic electronic device, therefore, it is indispensable to protect the organic materials from water and oxygen. Severe groups have reported on multi-layerd barriers consisting inorganic thin films deposited by plasma enhenced chemical deposition (PECVD) or sputtering. However, it is difficult to control the formation of granular-type morphology and microscopic pinholes in PECVD and sputtering. On the contrary, atomic layer deoposition (ALD) is free of pinhole, highly uniform, conformal films and show good step coverage. In this study, the passivation layer was deposited using single-process PEALD. The passivation layer, in our case, was a bilayer system consisting of $Al_2O_3$ films and a $TiO_2$ buffer layer on a poly (ether sulfon) (PES) substrate. Because the deposition temperature and plasma power have a significant effect on the properties of the passivation layer, the characteristics of the $Al_2O_3$ films were investigated in terms of density under different deposition temperatures and plasma powers. The effect of the $TiO_2$ buffer layer also was also addressed. In addition, the water vapor transmission rate (WVTR) and organic light-emitting diode (OLEDs) lifetime were measured after forming a bilayer composed of $Al_2O_3/TiO_2$ on a PES substrate.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.93-93
• /
• 2016

Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

• Journal of the Korean Applied Science and Technology
• /
• v.18 no.3
• /
• pp.233-240
• /
• 2001

The transparent organic-inorganic hybrid films were prepared by the Sol-Gel process. PVP(polyvinylpyrrolidone) was used in organic component and TEOS(tetraethoxysilane) was used in inorganic component. HCI, $CH_{3}COOH$, and $NH_{4}OH$ were used as the Sol-Gel catalyst. The characteristics according to not only the variation of organic and inorganic contents but also the variation of catalyst species and contents were investigated. On the whole, the compatibility was remained between organic and inorganic components, and also as the TEOS contents were increased, mostly the transparency and the mechanical, thermal properties were improved. In addition, as content of catalysts was increased, the films showed characteristics that were closer to PVP than silica. Although the transparency of films was preserved in HCI and $CH_{3}COOH$, only the film containing more than 40wt% TEOS in $NH_{4}OH$ showed different phenomena.

• Korean Journal of Materials Research
• /
• v.18 no.2
• /
• pp.98-102
• /
• 2008

The ferroelectric properties of UV irradiated and non-irradiated PZT films prepared via photochemical metal-organic deposition using photosensitive precursors were characterized. Fourier transform infrared spectroscopy showed that complete removal of organic groups was possible through UV exposure of the spin-coated PZT precursor films at room temperature. The measured remnant polarization values of UV-irradiated and non-irradiated PZT films after annealing at $650^{\circ}C$ were 29 and $23\;{\mu}C/cm^2$, respectively. The UV irradiation was found to be effective for the enhancement of the <111> growth orientation and ferroelectric property of PZT film and in the direct patterning in the fabrication of micro-patterned systems without dry etching.

• Journal of the Korean Magnetics Society
• /
• v.17 no.3
• /
• pp.133-136
• /
• 2007

We investigated the changes of the magnetic properties in electroplated Permalloy thin films by a few organic additives added to the plating electrolytes. Under identical electroplating conditions, the crystalline orientations and the surface roughness of the plated thin films were different from those prepared with a pure electrolyte. These property changes reduced the coercivity and increased the magnetoimpedance ratio (MIR) up to 20%.

• Transactions on Electrical and Electronic Materials
• /
• v.7 no.5
• /
• pp.267-270
• /
• 2006

The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is $130^{\circ}C$. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 - 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 - 800 nm) measured without post annealing process and $9.83{times}10{-4}{\Omega}cm$ a low resistivity was measured thickness of 300 nm.