• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.67-70
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• 2009

Printed electronics are emerging technology to realize various microelectronic devices via a cost-effective method. Here we introduce high performance inkjet printed polymer field-effect transistors and application to complementary integrated circuits with p-type and n-type conjugated polymers. The performance of devices highly depends on the selection of dielectrics, printing condition and device architecture. The device optimization and performances of various integrated circuits, e.g., complementary inverters and ring oscillators will be mainly discussed in this talk.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.315-317
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• 2009

We report the preparation of novel nanofiber organic semiconductors that can be utilized as the active channel materials in the field effect transistors (FETs). The nanofibers produced by the electrospinning reveals the excellent performances (mobility ~ 0.16 $cm^2$/V) due to thier highly ordered molecular packing in the polymer matrix.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.328-330
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• 1997

Organic semiconductors such as conjugated polymers and oligomers have been studied many research groups. The band structures of conjugated polymers and oligomers are similar to those of conventional inorganic semiconductors Thin films based on these materials show a promising potential for Field Effect Transistors(FETs) and Light Emitting Diodes(LED) because fabrication processes are simple and cheaper for large electronic devices and flexible devices are also possible.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.265.2-265.2
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• 2016

Oxide thin film transistors (TFTs) have attracted considerable interest for gate diver and pixel switching devices of the active matrix (AM) liquid crystal display (LCD) and organic light emitting diode (OLED) display because of their high field effect mobility, transparency in visible light region, and low temperature processing below $300^{\circ}C$. Recently, oxide TFTs with polycrystalline In-Ga-O(IGO) channel layer reported by Ebata. et. al. showed a amazing field effect mobility of $39.1cm^2/Vs$. The reason having high field effect mobility of IGO TFTs is because $In_2O_3$ has a bixbyite structure in which linear chains of edge sharing InO6 octahedral are isotropic. In this work, we investigated the characteristics and the effects of oxygen partial pressure significantly changed the IGO thin-films and IGO TFTs transfer characteristics. IGO thin-film were fabricated by rf-magnetron sputtering with different oxygen partial pressure ($O_2/(Ar+O_2)$, $Po_2$)ratios. IGO thin film Varies depending on the oxygen partial pressure of 0.1%, 1%, 3%, 5%, 10% have been some significant changes in the electrical characteristics. Also the IGO TFTs VTH value conspicuously shifted in the positive direction, from -8 to 11V as the $Po_2$ increased from 1% to 10%. At $Po_2$ was 5%, IGO TFTs showed a high drain current on/off ratio of ${\sim}10^8$, a field-effect mobility of $84cm^2/Vs$, a threshold voltage of 1.5V, and a subthreshold slpe(SS) of 0.2V/decade from log(IDS) vs VGS.

• ETRI Journal
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• 제35권4호
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• pp.734-737
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• 2013

Nonvolatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on an organic thin-film transistor with inkjet-printed dodecyl-substituted thienylenevinylene-thiophene copolymer (PC12TV12T) as the active layer is developed. The memory window is 4.5 V with a gate voltage sweep of -12.5 V to 12.5 V. The field effect mobility, on/off ratio, and gate leakage current are 0.1 $cm^2/Vs$, $10^5$, and $10^{-10}$ A, respectively. Although the retention behaviors should be improved and optimized, the obtained characteristics are very promising for future flexible electronics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.518-520
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• 1997

Recently, thiophene oligomer with short chain lengths has received much attention as model compounds for facilitating better understanding of electronic and optical properties of polymers, because oligomer is well-defined chemical systems and its conjugation chain length can be exactly controlled. Moreover, organic this films based on conjugated thiophene oligomer have potential for application to electronic and optoelectronic devices such as MISFETs(metal-insulator-semiconductor field-effect transistors) and LEDs(light-emitting diodes). However, there is little knowledge on electronic and structural properties of linear-conjugated oligothiophenes in solid states, compared with those in solutions. $\alpha$-sexithienyl($\alpha$-6T) thin-films were deposited by OMBD(Organic Molecular Beam Deposition) technique, where the $\alpha$-6T was synthesized and purified by the sublimation method. The $\alpha$-6T films were deposited under various conditions. The effects of deposition rate, substrate temperature, and vacuum pressure on the formation of these films have been studied. The molecules in the $\alpha$-6T film deposited at a low deposition rate under a high vacuum were aligned almost perpendicular to the substrate. The $\alpha$-6T films deposited at an elevated substrate temperature showed higher conductivity than the film deposited at room temperature. Electrical characterization of these films will be also executed by using four-point probe measurement technique.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.230-231
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• 2007

we fabricated a pentacene thin-film transistor with an $Al_2O_3$ layer of ALD as a gate insulator and obtained a device with better electrical characteristics at low operating voltages (below 16V). This device was found to have a field-effect mobility of $0.03cm^2/Vs$, a threshold voltage of -6V, an subthreshold slope of 1 V/decade, and an on/off current ratio of $10^6$.

• 청정기술
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• 제30권1호
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• pp.13-22
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• 2024

본 연구에서는 6,13-Bis(triisopropylsilylethynyl)pentacene(TP):2-Decyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene(BT):Poly styrene (PS) 블랜딩 thin film transistor (TFT)를 제작 광 흡수 센서로의 활용에 대해 탐구한다. BT의 혼합으로 인해 off current 감소와 on/off ratio 향상을 동시에 달성하였다. 특히, TP:BT:PS (1:0.25:1 w/w) 샘플은 우수한 광 흡수 특성을 보여주었고, 이를 통해 높은 성능의 광 흡수 장치 제작이 가능함을 입증했다. 다양한 혼합 비율의 결정 구조와 전기적 특성에 대한 분석을 통해 TP:BT:PS (1:0.25:1 w/w) 샘플이 최적임을 확인하였다. 이 결과는 광 흡수 장치의 발전 뿐만 아니라 혼합 organic semiconductor (OSC)의 광전자 시스템 개발에 긍정적인 기대효과를 미칠 수 있을 것이며, 이를 통해 단일 OSC 사용의 제약을 극복하고, 미세 조정된 광학 응답을 갖춘 고성능 OSC TFT를 제작하여 의료 전자소자, 산업용 전자소자 등에 응용할 수 있을 것으로 기대된다.

• 전기전자학회논문지
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• 제13권2호
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• pp.126-131
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• 2009

Wrap-around 전계효과 트랜지스터는 채널과 전극간의 커플링을 매우 커서 채널길이가 짧아지면서 생기는 단채널효과(short channel effect)를 개선시킬 수 있는 이유로 많은 관심을 불러왔다. 본 논문에서는 실리콘 나노와이어를 이용하여 상향식의 wrap-around 전계효과 트랜지스터(FET)의 제작 공정을 소개한다. 소자의 제작 공정은 크게 전자빔 리소그래피, 유전영동(dielectrophoresis)을 이용한 나노와이어의 효과적 정렬 그리고 게이트 전극의 전기 화학적 도금(electrochemical deposition)을 이용한 생성 등의 방법들로 이루어진다. 전기 화학적 도금을 위한 용액은 독성을 띄지 않는 유기물 용액을 사용하였다. 액체 질소를 이용하여 polymethyl methacrylate(PMMA)가 전기화학적 도금시 형태를 잃지 않게 함으로써, 패터닝된 PMMA가 wrap-around 게이트 나노구조를 제작하기 위한 나노 템플릿으로 사용될 수 있도록 하였다.

• 마이크로전자및패키징학회지
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• 제16권4호
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• pp.17-22
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• 2009

Two different organic-inorganic hybrid thin film transistors (OITFTs) with the structures of glass/ITO/ZnO/PMMA/Al (staggered structure) and glass/ITO/PMMA/ZnO/Al (inverted staggered structure), were fabricated and their electrical and structural properties were compared. The ZnO thin films used as active channel layers were deposited by the atomic layer deposition (ALD) method at a temperature of $100^{\circ}C$. To investigate the effect of the substrates on their properties, the ZnO films were deposited on bare glass, PMMA/glass and ITO/glass substrates and their crystal properties and surface morphologies were analyzed. The structural properties of the ZnO films varied with the substrate conditions. The ZnO film deposited on the ITO/glass substrate showed better crystallinity and morphologies, such as a higher preferred c-axis orientation, lower FWHM value and larger particle size compared with the one deposited on the PMMA/glass substrate. The field effect mobility ($\mu$), threshold voltage ($V_T$) and $I_{on/off}$ switching ratio for the OITFT with the staggered structure were about $0.61\;cm^2/V{\cdot}s$, 5.5 V and $10^2$, whereas those of the OITFT with the inverted staggered structure were found to be $0.31\;cm^2/V{\cdot}s$, 6.8 V and 10, respectively. The improved electrical properties for the staggered OITFTs may originate from the improved crystal properties and larger particle size of the ZnO active layer.