• 한국정보통신학회논문지
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• 제13권1호
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• pp.110-114
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• 2009

최근에 유기물 전계효과 트랜지스터의 연구는 전자소자분야에서 널리 알려져 있다. 특히 본 연구에서는CuPc 물질을 기본으로 하여 소자를 제작하고, 또한 기판의 온도를 달리 하여 제작하였다. CuPc FET 소자는 top-contact 방식으로 제작하였으며, 기판의 온도는 상온과 $150^{\circ}C$로 달리 하였다. 또한 CuPc의 두께는 40nm로 하였고, 채널의 길이는 $50{\mu}m$, 폭은 3mm로 하였다. 제작된 소자를 이용하여 전압-전류 특성을 측정하였다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2007년도 춘계종합학술대회
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• pp.548-551
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• 2007

최근에 유기물 전계효과 트랜지스터의 연구는 전자 소자 분야에서 널리 알려져 있다. 특히 본 연구에서는 CuPc 물질을 기본으로 하여 소자를 제작하고, 또한 기판의 온도를 달리 하여 제작하였다. CuPc FET 소자는 top-contact 방식으로 제작하였으며, 기판의 온도는 상온과 $150^{\circ}C$로 달리 하였다. 또한 CuPc의 두께는 40nm로 하였고, 채널의 길이는 $50{\mu}m$, 폭은 3mm로 하였다. 제작된 소자를 이용하여 전압-전류 특성을 측정하였다.

• 한국전기전자재료학회논문지
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• 제16권11호
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• pp.961-968
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• 2003

In order to reach the high electrical quality of organic thin film transistors (OTFTs) such as high mobility and on-off current ratio, it is strongly desirable to study the enhancement of electrical properties in OTFTs. Here, we report the novel method of hydrogen plasma treatment to improve electrical properties in inverted staggered OTFTs based on pentacene as active layer. To certify the effect of this method, we compared the electrical properties of normal device as a reference with those of device using the novel method. In result, the normal device as a reference making no use of this method exhibited a field effect mobility of 0.055 $\textrm{cm}^2$/Vs, on/off current ratio of 10$^3$, threshold voltage of -4.5 V, and subthreshold slope of 7.6 V/dec. While the device using the novel method exhibited a field effect mobility of 0.174 $\textrm{cm}^2$/Vs, on/off current ratio of 10$\^$6/, threshold voltage of -0.5 V, and subthreshold slope of 1.49 V/dec. According to these results, we have found the electrical performances in inverted staggered pentacene TFT owing to this method are remarkably enhanced. So, this method plays a key role in highly improving the electric performance of OTFTs. Moreover, this method is the first time yet reported for any OTFTs.

• 한국응용과학기술학회지
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• 제24권1호
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• pp.54-60
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• 2007

이 논문에서는 게이트 절연막 위에 vapor deposition polymerization(VDP)방법을 사용하여 성막한 유기 점착층을 진공 열증착하여 유기 박막 트랜지스터(OTFTs)소자를 제작할 수 있음을 증명하였다. 우리가 제작한 Staggered-inverted top-contact 구조를 사용한 유기 박막 트랜지스터는 전기적 output 특성이 포화 영역안에서는 포화곡선을, triode 영역에서는 비선형적인 subthreshold를 확실히 볼 수 있음을 발견했다. $0.2{\mu}m$ 두께를 가진 게이트 절연막위에 유기 점착층을 사용한 OTFTs의 장 효과 정공의 이동도와 문턱전압, 그리고 절멸비는 각각, 약 0.4cm2/Vs, -0.8V, 106 이 측정되었다. 게이트 절연막의 점착층으로써 폴리이미드의 성막을 위해, 스핀코팅 방법 대신 VDP 방법을 도입하였다. 폴리이미드 고분자막은 2,2bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride(6FDA)와 4,4'-oxydianiline(ODA)을 고진공에서 동시에 열 증착 시킨 후, 그리고 $150^{\circ}C$에서 1시간, 다시 $200^{\circ}C$에서 1시간 열처리하여 고분자화된 막을 형성하였다. 그리고 점착층이 OTFTs의 전기적 특성에 주는 영향을 설명하기 위해 비교 연구하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.384-385
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• 2006

We studied about conductive pastes of the source-drain contacts for OTFTs(organic thin-film transistors) fabricated by direct printing(screen printing) method. We used Ag and conductive carbon black powder as the conductive fillers of pastes. The conductive pastes were manufactured by various dispersing agents and dispersing conditions and source-drain contacts with $100{\mu}m$ of channel length were fabricated. We could obtain the OTFTs which exhibited different field-effect behaviors over a range of source-dram and gate voltages depending on a kind of conductive fillers used conductive pastes.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.168-168
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• 2006

Low-operating voltage organic field-effect transistors (OFETs) have been realized with high dielectric constant (${\kappa}$) polymer such as cyanoethylated poly vinyl alcohol (CR-V, ${\kappa}=12$). Since the $high-{\kappa}$polymers are likely to contain water and ionic impurities, large hysteresis and considerable leakage current are frequently observed in OFETs. To solve these problems, we cross-linked the CR-V by using a cross-linking agent. Cross-linked CR-V dielectrics showed high dielectric constant of 11.1 and good insulating properties, resulting in a high capacitance ($81nF/cm^{2}$ at 1MHz) at 120 nm of dielectric thickness. Pentacene FETs with cross-linked CR-V dielectrics exhibited high carrier mobility ($0.72\;cm^{2}/Vs$), small subthreshold swing (185 mV/dec) and little hysteresis at low-operating voltage (${\Leq}-3V$).

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.119-122
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• 2008

In this paper, we describe the current status and issues of the oxide thin-film transistors (OTFTs), which attract much attention as an emerging new backplane technology replacing conventional silicon-based TFTs technologies. First, the unique benefits of OTFTs will be presented as a backplane for large-sized AMOLED including note-book PC, second TV and HD-TV. And then, the state-of-the-art transistor performance and uniformity characteristics of OTFTs will be highlighted. The obtained a-IGZO TFTs exhibited the field-effect mobility of $18\;cm^2/Vs$, threshold voltage of 1.8 V, on/off ratio of $10^9$, and subthreshold gate swing of 0.28 V/decade. In addition, the world largest-sized 12.1-inch WXGA active-matrix organic light emitting diode (AMOLED) display is demonstrated using indium-gallium-zinc oxide (IGZO) TFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.74-77
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• 2006

Thin $AuO_x$ layer was formed by $O_2$ plasma treatment on Au electrode. The surface work function of plasma treatment showed higher by 0.5 eV than that of bare Au, reducing the hole injection barrier at the Au/pentacene interface. Using $O_2$ plasma-treated Au source-drain electrodes, the field-effect mobility of bottom-contact pentacene-OTFT was increased from 0.05 to 0.1 $cm^2/Vs$.

• 한국세라믹학회지
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• 제54권6호
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• pp.449-469
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• 2017

The development of quantum dots (QDs) has had a significant impact on various applications, such as solar cells, field-effect transistors, and light-emitting diodes (LEDs). Through successful engineering of the core/shell heterostructure of QDs, their photoluminescence (PL) quantum yield (QY) and stability have been dramatically enhanced. Such high-quality QDs have been regarded as key fluorescent materials in realizing next-generation display devices. Particularly, electrically driven (or electroluminescent, EL) QD light-emitting diodes (QLED) have been highlighted as an alternative to organic light-emitting diodes (OLED), mostly owing to their unbeatably high color purity. Structural optimizations in QD material as well as QLED architecture have led to substantial improvements of device performance, especially during the past decade. In this review article, we discuss QDs with various semiconductor compositions and describe the mechanisms behind the operation of QDs and QLEDs and the primary strategies for improving their PL and EL performances.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.264-264
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• 2008

We fabricated a pentacene thin-film transistor with a Polymer/$SiO_2$ Double Gate Dielectrics and obtained a device with better electrical characteristics. This device was found to have a field-effect mobility of $0.04cm^2$/Vs, a threshold voltage of -2V, an subthreshold slope of 1.3 V/decade, and an on/off current ratio of $10^7$.