• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1009-1013
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• 2009

In this study, we have been synthesized the dielectric layer using pure organic and organic-inorganic hybrid precursor on flexible substrate for improving of the organic thin film transistors (OTFTs) and, design and fabrication of organic thin-film transistors (OTFTs) using small-molecule organic semiconductors with pentacene as the active layer with record device performance. In this work OTFT test structures fabricated on polymerized substrates were utilized to provide a convenient substrate, gate contact, and gate insulator for the processing and characterization of organic materials and their transistors. By an adhesion development between gate metal and PI substrate, a PI film was treated using $O_2$ and $N_2$ gas. The best peel strength of PI film is 109.07 gf/mm. Also, we have studied the electric characteristics of pentacene field-effect transistors with the polymer gate-dielectrics such as cyclohexane and hybrid (cyclohexane+TEOS). The transistors with cyclohexane gate-dielectric has higher field-effect mobility, $\mu_{FET}=0.84\;cm^2/v_s$, and smaller threshold voltage, $V_T=-6.8\;V$, compared with the transistor with hybrid gate-dielectric.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.70-71
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• 2005

The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 6FDA and ODA. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2$/Vs, threshold voltage of -0.8 V and on-of current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.357-361
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• 2006

The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride and 4,4'-oxydianiline. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2/Vs$, threshold voltage of -0.8 V and on-off current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.257-257
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• 2010

One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio ($I_{on}/I_{off}$), leakage current, threshold voltage, and hysteresis, under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stabilities of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers were investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic layer deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to $10^5$ times with 5mm bending radius. In the most of the devices after $10^5$ times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from $O_2$ and $H_2O$ in the atmosphere, which leads to decrease in the $I_{on}/I_{off}$ and increase in the hysteresis. With encapsulation layers, however, the electrical stabilities of the OTFTs were improved significantly. In particular, the OTFTs with multi-stack hybrid encapsulation layer showed the best electrical stabilities up to the bending cycles of $10^5$ times compared to the devices with single organic encapsulation layer. Changes in electrical properties of cyclically bent OTFTs with encapsulation layers will be discussed in detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.114-115
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• 2007

In this paper, it was demonstrated that organic thin-film transistors (OTFTs) were fabricated with the organic passivation layer by vapor deposition polymerization (VDP) processing, In order to form polymeric film as an passivation layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing, Field effect mobility, threshold voltage, and on-off current ratio with 450-nm-thick organic passivation layer were about $0.21\;cm^2/Vs$, IV, and $1\;{\times}\;10^5$, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.896-898
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• 2009

The printed electrodes of organic thin-film transistors (OTFTs) were fabricated by screen printing using nanoparticle silver pastes. The screen printed OTFT corresponds to channel lengths between 7.6 to 82.6 ${\mu}m$ (designed L=10 to 80 ${\mu}m$) on the $150{\times}150mm^2$ paper. The channel length deviations for 40 to 80 ${\mu}m$ patterns were less than 5 %. However, the channel lengths for 10 to 30 ${\mu}m$ patterns were increased by 20 %. The screen printed bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) OTFTs obtained had a field-effect mobility as large as 0.08 (${\pm}0.02$) $cm^2$/Vs, an on/off current ratio of $10^5$ and a subthreshold slope of 1.95 V/decade.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.61-62
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• 2006

In this paper, it was demonstrated that organic thin- film transistors (OTFTs) were fabricated with the organic adhesion layer between an organic semiconductor and a gate insulator by vapor deposition polymerization (VDP) processing. In order to form polymeric film as an adhesion layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing. The saturated slop in the saturation region and the subthreshold nonlinearity in the triode region were c1early observed in the electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure. Field effect mobility, threshold voltage, and on-off current ratio in 15-nm-thick organic adhesion layer were about $0.5\;cm^2/Vs$, -1 V, and $10^6$, respectively. We also demonstrated that threshold voltage depends strongly on the delay time when a gate voltage has been applied to bias stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.142-143
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• 2006

Organic thin film transistors(OTFTs) were simulated by a SPICE model adopted in the amorphous TFTs(a-Si:H TFTs). The gate voltage-dependent mobilities were assumed to fit the representative current-voltage characteristics. The optimal fitting procedures were suggested to compare the experimental data with the mathematical expressions used in the amorphous TFTs. Each SPICE parameter explains the gate dependent mobilities in OTFTs which might originate from the influence of the hopping conduction.

• Applied Chemistry for Engineering
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• v.23 no.3
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• pp.289-292
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• 2012

Au electrodes modified with self-assembled monolayers (SAMs) were used to control the work function of source/drain electrodes in triethylsilylethynyl anthradithiophene (TES ADT)-based organic thin film transistors (OTFTs). By using benzothiol (BT) and pentafluorobenzothiol (PFBT) SAMs, the hole injection barrier between Au and the highest occupied molecular orbital (HOMO) of TES ADT was controlled. After a solvent annealing, TES ADT OTFTs with PFBT SAM-treated Au electrodes were found to exhibit high field-effect mobilities of $0.05\;cm^2/Vs$ and on/off current ratios of $10^6$.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1313-1316
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• 2005

In the present paper, it was investigated that adhesion layer on gate insulator could affect the electrical characteristics for the organic thin film transistors (OTFTs). The polyimide (PI) as organic adhesion layer was fabricated by using the vapor deposition polymerization (VDP) processing . It was found that electrical characteristics improved comparing OTFTs using adhesion layer to another. We researched adhesion layer as a function of thickness. For inverted-staggered top contact structure, field effect mobility, threshold voltage, and on-off current ratio of OTFTs using adhesion layer of PI 15 nm thickness on the gate insulator with a thickness of 0.2 ${\mu}m$ were about 0.5 $cm^2/Vs$, -0.8 V, and $10^6$, respectively.