• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.925-927
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• 2008

In order to improve the performance in green phosphorescent OLED devices, Merck has developed novel host and electron blocking materials. The newly developed host materials improve the device lifetime by a factor of 3. The newly developed electron blocking materials having not only electron but also exciton barrier properties increase the efficiency of the device by a factor of 1.4. Comparable results were achieved in phosphorescent red systems with further host materials.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1401-1403
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• 2005

We present that the carrier balance can be improved by doping a hole transport layer of 4,4'- bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (${\alpha}$-NPD) with a hole blocking material of 2,9-dimethyl- 4,7-diphenyl-1,10-phenanthroline (BCP). The doping leads to disturb hole transport, which can enhance the balance of electron s and holes concentration in the emitting layer, aluminum tris(8 -hydroxyquinoline) (Alq3), resulting in enhanced electroluminescence (EL) quantum efficiency for the device with the doped ${\alpha}$-NPD.

• Macromolecular Research
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• 제11권3호
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• pp.194-197
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• 2003

A new 2,5-di(t-octylphenoxy) group substituted poly(p-phenylenevinylene) derivative was synthesized by Gilch polymerization. The obtained polymer was characterized by NMR, FT-IR, and chemical analysis and completely soluble in common organic solvents. The polymer showed good thermal stability with T$_{g}$ of 105$^{\circ}C$. The polymer dissolved in chloroform showed maximum emission at 514 nm with a shoulder peak at around 560 nm. The EL spectrum of the ITO/PEDOT/TOP-PPV/Al device was observed maximum emission at 545 nm with a shoulder peak at around 585 nm.m.

• Applied Science and Convergence Technology
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• 제25권1호
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• pp.1-6
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• 2016

Quantum dots (QDs) are considered as excellent color conversion and self-emitting materials for display and lighting applications. In this article, various technologies which can be used to realize white light emission with QDs are discussed. QDs have good color purity with a narrow emission spectrum and tunable optical properties with size control capabilities. For white light emission with a color-conversion approach, QDs are combined with blue-emitting inorganic and organic light-emitting diodes (LED) to generate white emission with high energy conversion efficiency and a high color rendering index for various display and lighting applications. Various device structures for self-emitting white QD light-emitting diodes (QD-LED) are also reviewed. Various stacking and patterning technologies are discussed in relation to QD-LED devices.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1469-1471
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• 1997

In this study, Organic electroluminescent(EU devices with multilayer structures were fabricated using tris (8-hydroxy quinolinate) aluminum($Alq_3$) as an electron-tran sporting emitting layer and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl)-[1,1'-biphenyl]-4,4'-diamine : aromatic diamine) as a hole-transporting layer. A cell with a structure of glass substrate/indium-tin-oxide(ITO)/$Alq_3$/TPD/Mg:In exhibited bright green electroluminescence from the TPD layer. The peak intensity of TPD and $Alq_3$ different from spin coating and vacuum evaporation. The peak emission energy shifts to a higher energy with deposition technique. An emission peak at 500nm was achieved at a driving voltage of 30V.

• 반도체디스플레이기술학회지
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• 제4권3호
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• pp.17-22
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• 2005

LED lamp was designed by the serial-parallel integration of LED chips in metal-interconnection. The 7 $4.5{\times}4.5\;in^{2}$ masks were designed with the contact type of chrome-no mirror?dark. The white epitaxial thin film was grown by metal-organic chemical vapor deposition. The active layers were consisted with the serial order of multi-quantum wells for blue, green and red lights. The fabricated LED chip showed the electroluminescence peaked at 450, 560 and 600 nm. For the current injection of 20 mA, the operating voltage was measured to 4.25 V and the optical emission power was obtained to 0.7 $\mu$W.

• 한국응용과학기술학회지
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• 제16권1호
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• pp.41-44
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• 1999

Recently, high luminance and efficiency were realize in organic thin film electroluminescence (EL) cells with multilayer structures including an emitting layer (EML), hole transporting layer (HTL), and an electron transporting layer (ETL). In this study, Bis(10-hydroxybenzo[h]quinolinato)beryllium (Bebq2) was synthesized. PL and EL characteristics of their thin film were investigated by fabricating the devices having a structure of ITO/PVK/Bebq2/Al, ITO/PVK dispersed with TPD/Bebq2/Al. The EL color of these device was greenish and the wavelength of their EL peaks was located, respectly, at 495nm, and 492.5nm.

• Bulletin of the Korean Chemical Society
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• 제31권10호
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• pp.2884-2888
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• 2010

Two red fluorescent DCJTB derivatives (Red 1 and 2) based on modified pyrans were synthesized and their electroluminescent properties were investigated. Multilayered OLEDs were fabricated with the device structure of ITO/NPB (40 nm)/Red 1, 2 or DCJTB (0.5 or 1%): $Alq_3$ (20 nm)/$Alq_3$ (40 nm)/Liq (2 nm)/Al. All devices exhibited efficient red emissions. In particular, a device containing emitter Red 2 as a dopant in the emitting layer, the maximum luminance was $8737\;cd/m^2$ at 12.0 V, the luminous and power efficiencies were 2.31 cd/A and 1.25 lm/W at $20\;mA/cm^2$, respectively. The peak wavelength of the electroluminescence was 638 nm with the CIE (x,y) coordinates of (0.63, 0.36) at 7.0 V.

• Journal of Information Display
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• 제2권4호
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• pp.8-14
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• 2001

Three types of conjugated polymers, poly(PZ-Pi), poly(PZ-BPI) and poly(PZ-NPI) were synthesized by Schiff-base reaction. These new conjugated polymers exhibited improved solubility in common organic solvents due to the presence of alkyl side chains as well as azomethine groups, Double layer LEDs made with the synthesized polymers as emitting layer and $Alq_3$, as electron transporting layer exhibited enhanced EL emission and efficiency compared to those of single layer LEDs. Double layer LEDs exhibited gradual shift in the emission peak th the single layer LED, made of only $Alq_3$ as the emitting layer as the thickness of $Alq_3$ layer increased.

• 반도체디스플레이기술학회지
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• 제3권3호
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• pp.31-35
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• 2004

A blue light emitting diode with 8 periods InGaN/GaN multi-quantum well structure grown by metal-organic chemical vapor deposition was fabricated with the inclusion of the metal-interconnection process in order to integrate the chips for light lamp. The quantum well structure provides the blue light photoluminescence peaked at 479.2 nm at room temperature. As decreasing the temperature to 20 K, the main peak was shifted to 469.7 nm and a minor peak at 441.9 nm appeared indicating the quantum dot formation in quantum wells. The current-voltage measurement for the fabricated LED chips shows that the metal-interconnection provides good current path with ohmic resistance of 41 $\Omega$.