• 제목/요약/키워드: Organic device

검색결과 1,355건 처리시간 0.026초

전력설비용 Polyimide의 전압-전류특성 (Voltage-Current Properties of Polyimide use Electrical Power Installation)

  • 전동규;이경섭
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 1998년도 학술발표회논문집
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    • pp.112-115
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    • 1998
  • We investigate the qualities of organic materials by which can manufacture organic thin films for solar cells and make thin films for insulation layers of an insulated cable. We give pressure stimulation into organic thin films and detect the induced displacement current. In processing of a device manufacture, We can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/organic thin films(polyimide)/Au and I-V characteristic of the device is measured from 0[V] to +5[V]. The maximum value of measured current is increased as the number of accumulated layers are decreased. The resistance for the number of accumulated layers, the energy density for an input voltage show desired results, and the insulation of a thin film is better as the interval between electrodes is larger.

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Improvement in Adhesion of the Indium Zinc Oxide (IZO) Thin Films on Organic Polymer Films

  • Lee, Yeong-Beom;Kim, Kyong-Sub;Ko, Min-Jae;Kim, Kyung-Seop
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.537-539
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    • 2009
  • We report the improvement in adhesion of IZO thin films through oxygen ($O_2$) plasma treatment of organic polymer film. In conclusion, the $O_2$ plasma treatment of an organic polymer film was accomplished with improving ca. 1.8 times in adhesion than that of the only general etch treatment on the same organic polymer film.

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유기 전기발광 소자에 관한 연구 (A Research on Organic Electro-luminescence)

  • 이한성
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 학술대회 논문집 전문대학교육위원
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    • pp.82-85
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    • 2005
  • Organic EL has been expected to adopt to a new styles of technology that make flat display after Tang & Vanslyke made good electric luminescence device in late 1980s. Their studies based on multi layer structure that consists of emitting layer and carrier transporting layer using proper organic material. In this study, we made multi layer device using $Eu(TTA)_3(phen)$ as a luminescence material by PVD and investigate luminous properties of each device. But oxidization of organic layer by ITO, energy walls in both pole interface, contaminations of ITO surface, importance of protecting membrane, diffusive dimming of light to cathode organic layer, these causes of degradations are common facts of a macromolecule and micromolecule. We think these degradation caused by the impact of heat and electro-chemical factor, bulk effect and interface phenomenon, and raise a question.

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유기EL 소자의 수명에 관한 연구 (A Research on Life of Organic Lumminescence Devices)

  • 이한성
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 학술대회 논문집 전문대학교육위원
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    • pp.110-113
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    • 2002
  • Organic EL has been expected to adopt to a new styles of technology that make flat display after Tang & Vanslyke made good electric luminescence device in late 1980s. Their studies based on multi layer structure that consists of emitting layer and carrier transporting layer using proper organic material. In this study. we made multi layer device using $Eu(TTA)_3(phen)$ as a luminescence material by PVD and investigate luminous properties of each device. But oxidization of organic layer by ITO. energy walls in both pole interface. contaminations of ITO surface, importance of protecting membrane, diffusive dimming of light to cathode organic layer. these causes of degradations are common facts of a macromolecule and micromolecule. We think these degradation caused by the impact of heat and electro-chemical factor, bulk effect and interface phenomenon. and raise a question.

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유기발광소자(OLED)의 전기전도메커니즘에 대한 고찰 (Study on the Electrical Conduction Mechanism of Organic Light-Emitting Diodes (OLEDs))

  • 이원재
    • 반도체디스플레이기술학회지
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    • 제17권4호
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    • pp.6-10
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    • 2018
  • Organic light emitting devices have attracted the attention of many people because of their high potential for self-emission and flexible display devices. However, due to limitations in device efficiency and lifetime, partial commercialization is underway. In this paper, we have investigated the electrical conduction mechanism of the organic light emitting device by the temperature and the thickness of the light emitting layer through the current - voltage characteristics with respect to the conduction mechanism directly affecting the efficiency and lifetime of the organic light emitting device. Through the study, it was found that the conduction in the low electric field region is caused by the movement of the heat excited charge in the ohmic region and the tunneling of the electric charge due to the high electric field in the high electric field region.

Electrical and Optical Properties of Phosphorescent Organic Light-Emitting Devices with a TAPC Host

  • Kim, Tae-Yong;Moon, Dae-Gyu
    • Transactions on Electrical and Electronic Materials
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    • 제12권2호
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    • pp.84-87
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    • 2011
  • We fabricated phosphorescent organic light-emitting devices with a 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) host layer. Two kinds of devices, one of ITO/TAPC/TAPC:FIrpic/TAZ/LiF/Al (device A) and one of ITO/TAPC:FIrpic/TAPC/TAZ/LiF/Al (device B), were prepared to investigate electrical and optical properties. Iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,$C^{2'}$]picolinate (FIrpic) and 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (TAZ) were used as a blue phosphorescent guest material and an electron transport layer, respectively. The TAPC layer in device B strongly contributes to whitish emission, higher driving voltage, and lower current efficiency characteristics compared with device A. The mechanisms of these electrical and optical characteristics of the devices were investigated.

Effects of PEDOT:PSS Buffer Layer in a Device Structure of ITO/PEDOT:PSS/TPD/Alq3/Cathode

  • Ahn, Joon-Ho;Lee, Joon-Ung
    • Transactions on Electrical and Electronic Materials
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    • 제6권1호
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    • pp.25-28
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    • 2005
  • We have investigated the effects of hole-injection buffer layer in organic light-emitting diodes using poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate)(PEDOT:PSS) in a device structure of $ITO/PEDOT:PSS/TPD/Alq_{3}/cathode$. Polymer PEDOT:PSS buffer layer was made by spin casting method. Current-voltage, luminance-voltage characteristics and efficiency of device were measured at room temperature with a variation of cathode materials; Al, LiF/Al, LiAl, and Ca/Al. The device with LiF/Al cathode shows an improvement of external quantum efficiency approximately by a factor of ten compared to that of Al cathode only device. Our observation shows that cathode is important in improving the efficiency of the organic light-emitting diodes.

제작조건에 따른 유기박막의 전기특성 (Electrical Properties by Organic Thin Films According to Manufacture Condition)

  • 송진원;이경섭
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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    • pp.467-469
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    • 2000
  • We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 20[mN/m]. LB layers of Arac. acid deposited by LB method were deposited onto Y-type silicon wafer as x, y, z-type film. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/arachidic acid/Al, the number of accumulated layers Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V].

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유기박막의 누적형태에 따른 전기특성 (Electrical Properties of Organic Thin Films by Deposition Type)

  • 송진원;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.287-290
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    • 2000
  • We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 20[mN/m]. LB layers of Arac. acid deposited by LB method were deposited onto y-type silicon wafer as x, y, z-type film. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/arachidic acid/Al, the number of accumulated layers. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V].

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Use of Self Assembled Monolayer in the Cathode/Organic Interface of Organic Light Emitting Devices for Enhancement of Electron Injection

  • Manna, U.;Kim, H.M.;Gowtham, M.;Yi, J.;Sohn, Sun-young;Jung, Dong-Geun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1343-1346
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    • 2005
  • Self assembled monolayers (SAM) are generally used at the anode/organic interface to enhance the carrier injection in organic light emitting devices, which improves the electroluminescence performance of organic devices. This paper reports the use of SAM of 1-decanethiol (H-S(CH2)9CH3) at the cathode/organic interface to enhance the electron injection process for organic light emitting devices. Aluminum (Al), tris-(8-hydroxyquionoline) aluminum (Alq3), N,N'-diphenyl-N,N'-bis(3 -methylphenyl)-1,1'- diphenyl-4,4'-diamine (TPD) and indium-tin-oxide (ITO) were used as bottom cathode, an emitting layer (EML), a hole-transporting layer (HTL) and a top anode, respectively. The results of the capacitancevoltage (C-V), current density -voltage (J-V) and brightness-voltage (B-V), luminance and quantum efficiency measurements show a considerable improvement of the device performance. The dipole moment associated with the SAM layer decreases the electron schottky barrier between the Al and the organic interface, which enhances the electron injection into the organic layer from Al cathode and a considerable improvement of the device performance is observed. The turn-on voltage of the fabricated device with SAM layer was reduced by 6V, the brightness of the device was increased by 5 times and the external quantum efficiency is increased by 0.051%.

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