• Journal of the korean society of oceanography
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• v.39 no.1
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• pp.57-71
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• 2004

Based on the data obtained under the China-Korea joint project (1997-2001) and historic observations, the distribution, transportation and sedimentation of sediment in the southern Yellow Sea (SYS) are discussed, and the controversial formation mechanism of muddy sediments is also explored. The sediment transport trend analysis indicates that the net transport direction of sediment in the central SYS (a fine-grained sediment deposited area) points to $123.4^{\circ}E,\;35.1^{\circ}N$, which is a possible sedimentation center in the central SYS. The sediment transport pattern is verified by the distribution of total suspended matter (TSM) concentration and ${\delta}^{13}C$ values of particulate organic carbon (POC), the latter indicates that the bottom water plays a more important role than the surface water in transporting the terrigenous material to the central deep-water area of the SYS, and the Yellow Sea circulation is an important control factor for the sediment transport pattern in the SYS. The carbon isotope signals of organic matter in sediments indicate that the Shandong subaqueous delta has high sedimentation rate and the deposited sediments originate mainly from the modern Yellow River. The terrigenous sediments in deep-water area of the SYS originate mainly from the old Yellow River and the modern Yellow River, and only a small portion originates from the modern Yangtze River. The analytical results of TSM and stable carbon isotopes are further confirmed by another independent tracer of sediment source, polycyclic aromatic hydrocarbons (PAHs). Five light mineral provinces in the SYS can be identified and they indicate inhomogeneity in sources and sedimentary environment. The modern shelf sedimentary processes in the SYS are controlled by shelf dynamic factors. The muddy depositional systems are produced in the shelf low-energy environments, which are controlled by some meso-scale cyclonic eddies (cold eddies) in the central SYS and the area southwest of the Cheju Island. On the contrary, an anticyclonic muddy depositional system (warm eddy sediment) appears in the southeast of the SYS (the area northwest of the Cheju Island). In this study, we give the cyclonic and anticyclonic eddy sedimentation patterns.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.217-223
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• 2010

We grew multi-stacked InAs/$In_{0.1}Ga_{0.9}As$ DWELL (dot-in-a-well) structure by metal organic chemical vapor deposition and investigated optical properties by photoluminescence and I-V characteristics by dark current measurement. When stacking InAs quantum dots (QDs) with same growth parameter, the size and density of QDs were changed, resulting in the bimodal emission peak. By decreasing the flow rate of TMIn, we achieved the uniform multi-stacked QD structure which had the single emission peak and high PL intensity. As the growth temperature of n-type GaAs top contact layer (TCL) is above $600^{\circ}C$, the PL intensity severely decreased and dark current level increased. At bias of 0.5 V, the activation energy for temperature dependence of dark current decreased from 106 meV to 48 meV with increasing the growth temperature of n-type GaAs TCL from 580 to $650^{\circ}C$. This suggest that the thermal escape of bounded electrons and non-radiative transition become dominant due to the thermal inter-diffusion at the interface between InAs QDs and $In_{0.1}Ga_{0.9}As$ well layer.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.119-125
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• 2020

Transition metal dichalcogenides (TMDCs), two-dimensional atomic layered materials with direct bandgap in the range of 1.1-2.1 eV, have attracted a lot of research interest due to their high response to light and capability to build new types of artificial heterostructures. However, the large-area synthesis of high-quality and uniform TMDC films with vertical-stacked heterostructure still remains challenge. In this study, we have developed a metal-organic chemical vapor deposition (MOCVD) system for TMDCs and conducted a systematic study on the growth of single-layer TMDCs and their heterostructures. In particular, using a bubbler-type organometallic compound sources, the concentration and flow rate of each source can be precisely controlled to obtain uniformly single-layered MoS2 and WS2 films over the centimeter scale. In addition, the MoS2/WS2 vertical heterostructure was achieved by growing WS2 film directly on the MoS2 film, as confirmed by electron microscopy, UV-visible spectrophotometer, Raman spectroscopy, and photoluminescence spectroscopy.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.4
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• pp.149-153
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• 2021

ε-Ga₂O₃ thin films were grown on 4H-SiC substrates by metal organic chemical vapor deposition (MOCVD) and crystalline quality were evaluated depend on growth conditions. It was found that the best conditions of the ε-Ga₂O₃ were grown at a growth temperature of 665℃ and an oxygen flow rate of 200 sccm. Two-dimensional growth was completed after the merge of hexagonal nuclei, and the arrangement direction of hexagonal nuclei was closely related to the crystal direction of the substrate. However, it was confirmed that crystal structure of the ε-Ga₂O₃ had an orthorhombic rather than hexagonal. Crystal phase transformation was performed by thermal treatment. And a β-Ga₂O₃ thin film was grown directly on 4H-SiC for the comparison to the phase transformed β-Ga₂O₃ thin film. The phase transformed β-Ga₂O₃ film showed better crystal quality than directly grown one.

• Korean Chemical Engineering Research
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• v.46 no.3
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• pp.619-625
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• 2008

The effects of thermal cycling on residual stresses in both inorganic passivation/insulating layer that is deposited by plasma enhanced chemical vapor deposition (PECVD) and organic thin film that is used as a bonding adhesive are evaluated by 4 point bending method and wafer curvature method. $SiO_2/SiN_x$ and BCB (Benzocyclobutene) are used as inorganic and organic layers, respectively. A model about the effect of thermal cycling on residual stress and bond strength (Strain energy release rate), $G_c$, at the interface between inorganic thin film and organic adhesive is developed. In thermal cycling experiments conducted between $25^{\circ}C$ and either $350^{\circ}C$ or $400^{\circ}C$, $G_c$ at the interface between BCB and PECVD $ SiN_x $ decreases after the first cycle. This trend in $G_c$ agreed well with the prediction based on our model that the increase in residual tensile stress within the $SiN_x$ layer after thermal cycling leads to the decrease in $G_c$. This result is compared with that obtained for the interface between BCB and PECVD $SiO_2$, where the relaxation in residual compressive stress within the $SiO_2$ induces an increase in $G_c$. These opposite trends in $G_cs$ of the structures including either PECVD $ SiN_x $ or PECVD $SiO_2$ are caused by reactions in the hydrogen-bonded chemical structure of the PECVD layers, followed by desorption of water.

• Korean Journal of Materials Research
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• v.10 no.7
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• pp.482-488
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• 2000

The deposition characteristics of Cu film by MOCVD using (hfac)Cu(1,5-COD)(1,1,1,5,5,5-hexafluro-2,4-pentadionato Cu(I) 1,5-cryclooctadiene) as a precursor have been investigated in terms of substrate conditions. Two different substrates such as air-exposed TiN and non-contaminated TiN were used for the MOCVD of Cu. MOCVD of Cu on the air-exposed TiN affected the nucleation rate of Cu as well as its growth, resulting in the Cu films having poor interconnection between particles with relatively small grains. On the other hand, in-situ MOCVD of Cu led to the Cu films having a significantly improved interconnection between particles with larger grains, indicating the resistivity as low as $2.0{\mu}{\Omega}-cm$ for the films having more than 1900$\AA$ thickness. Moreover, better adhesion of Cu films to the TiN by using in-situ MOCVD has been obtained. Finally, initial coalescence mechanism of Cu was suggested in this paper in terms of different substrate conditions by observing the surface morphology of the Cu films deposited by MOCVD.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.427-427
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• 2016

Organic-inorganic hybrid perovskite have attracted significant attention as a new revolutionary light absorber for photovoltaic device due to its remarkable characteristics such as long charge diffusion lengths (100-1000nm), low recombination rate, and high extinction coefficient. Recently, power conversion efficiency of perovskite solar cell is above 20% that is approached to crystalline silicon solar cells. Planar heterojunction perovskite solar cells have simple device structure and can be fabricated low temperature process due to absence of mesoporous scaffold that should be annealed over 500 oC. However, in the planar structure, controlling perovskite film qualities such as crystallinity and coverage is important for high performances. Those controlling methods in one-step deposition have been reported such as adding additive, solvent-engineering, using anti-solvent, for pin-hole free perovskite layer to reduce shunting paths connecting between electron transport layer and hole transport layer. Here, we studied the effect of alkali metal halide to control the fabrication process of perovskite film. During the morphology determination step, alkali metal halides can affect film morphologies by intercalating with PbI2 layer and reducing $CH3NH3PbI3{\cdot}DMF$ intermediate phase resulting in needle shape morphology. As types of alkali metal ions, the diverse grain sizes of film were observed due to different crystallization rate depending on the size of alkali metal ions. The pin-hole free perovskite film was obtained with this method, and the resulting perovskite solar cells showed higher performance as > 10% of power conversion efficiency in large size perovskite solar cell as $5{\times}5cm$. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and inductively coupled plasma optical emission spectrometry (ICP-OES) are analyzed to prove the mechanism of perovskite film formation with alkali metal halides.

• Applied Chemistry for Engineering
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• v.10 no.2
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• pp.225-230
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• 1999

Low pressure metal organic chemical vapor deposition (LPMOCVD) of $Li_2O$ solid thin films from Li(DPM) in nitrogen-oxygen or argon-oxygen atmosphere was experimentally investigated by using a small hot wall tubular type reactor. XRD and ESCA analysis revealed that $Li_2CO_3$ film grew in nitrogen-oxygen atmosphere and $Li_2O$ grew in argon-oxygen atmosphere. The grown lithium oxide or carbonate reacted with silicon or silica base materials to produce silicates. The CVD model analysis by means of the well-known micro trench method and Monte Carlo simulation was not fully successful, but a set of data on gas phase reaction rate constant and surface reaction constant was obtained.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.110.1-110.1
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• 2012

Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work, $Al_2O_3$ and $TiO_2$ thin films were deposited on poly ether sulfon (PES) and $SnO_x$-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to $Al_2O_3/TiO_2$ layered structure. For example, $Al_2O_3$, $TiO_2$ single layer, $Al_2O_3/TiO_2$ double layer and $Al_2O_3/TiO_2/Al_2O_3/TiO_2$ multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and $SnO_x$-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of $SnO_x$-based TFT devices were significantly improved. Therefore, the results indicate that $Al_2O_3/TiO_2$ water vapor barrier layers are highly proper for use as a passivation layer in $SnO_x$-based TFT devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.