• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.586-589
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• 1999

Organic semiconductors based on conjugated thiophene oligomer have great potential to be utilized as an active layer far electronic and optoelectronic devices. In this study, $\alpha$ -sexithiophene($\alpha$-6T) thin films and various electrode materials were deposited by Organic Molecular Beam Deposition(OMBD) and vacuum evaporation respectively. Those films were photolithographically patterned fur measurements. Electrical characterization of the thin film transistor with various channel length were measured, and field effect mobility is calculated by formula.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.36-36
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• 2010

유기 반도체는 합성 방법의 다양함, 섬유나 필름 형태로 성형이 용이함, 경량성, 유연성, 전도성, 저렴한 생산비, 높은 생산성 등의 특성을 가지고 있으며, 무기물과 같이 벌크 성질을 이용할 수 있을 뿐만 아니라, 분자 자체가 기능성을 가지므로 초박막의 형태에서도 기능성이 유지되어 새로운 초박막 기능성 전자소자 및 광소자의 개발이 가능하다. 특히 플라스틱과 같이 유연한 기판에 박막을 성형할 수 있기 때문에 기존의 고체 반도체로써 실현할 수 없는 두루마리 TV와 같은 flexible application에 적용할 수 있다. 본 발표에서는 유기반도체를 사용하는 유기소자 중 유기박막트랜지스터(Organic Thin Film Transistor; OTFT)에 대한 전반적인 기술동향과 동작원리 및 소자구조와 성능과의 관련성, 그리고 성능 개선을 위하여 시도되고 있는 여러 가지 공정 및 표면처리의 효과에 대하여 설명한다. 또한 본 연구실에서 수행하고 있는 OTFT 관련 연구현황을 소개하고 OTFT의 발전방향을 예측해 본다.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.137-140
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• 2005

Organic light emitting transistors (OLET) which are vertically combined with the organic static induction transistor (OSIT) and organic light emitting diode (OLED) are fabricated and the device characteristics are investigated. High luminance modulations by relatively low gate voltages are obtained. In order to realize the flexible electronic circuits and displays, we have fabricated OSIT on plastic substrates. The OSIT fabricated on plastic substrate show almost same characteristics comparing with those of nonflexible OSIT on glass substrate. The OLET described here is a suitable element for flexible sheet displays.

• Journal of Semiconductor Engineering
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• v.1 no.1
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• pp.38-45
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• 2020

With the recent emergence of foldable electronic devices, interest in flexible organic memory is significantly growing. There are three types of flexible organic memory that have been researched so far: floating-gate (FG) memory, ferroelectric field-effect-transistor (FeFET) memory, and resistive memory. Herein, performance parameters and operation mechanisms of each type of memory device are introduced, along with a brief summarization of recent research progress in flexible organic memory.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1174-1177
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• 2006

A bottom contact organic thin film transistor (OTFT) is fabricated with an organic double-layered gate insulator (GI) and pentacene. The PMMA and MNB layers are treated on gate insulator and source/drain (S/D, Au) before depositing pentacene to investigate device properties and pentacene growth. The sequence of surface treatment affects a device performance seriously. The ultra-thin PMMA (below 50A) was deposited on organic gate insulator and S/D metal by spin coating method, which showed no deterioration of on-state current (Ion) although bottom contact structure was exploited. We proposed that the reason of no contact resistance (Rc) increase may be due to a wettability difference in between PMMA / Au and PMMA / organic GI. As a result, the device treated by $PMMA\;{\rightarrow}\;MNB$ showed much better Ion behavior than those fabricated by $MNB\;{\rightarrow}\;PMMA$. We will report the important physical and electrical performance difference associated with surface treatment sequence.

• Journal of the Korean Applied Science and Technology
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• v.30 no.2
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• pp.290-296
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• 2013

We analysed interfacial traps in organic thin-film transistors (TFTs) in which pentacene and 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) organic semiconductors were deposited by means of vacuum-thermal evaporation and drop-coating methods, respectively. The thermally-deposited pentacene film consists of dentritic grains with the average grain size of around 1 m, while plate-like crystals over a few hundred microns are observed in the solution-processed TIPS-pentacene film. From the transfer characteristics of both TFTs, lower subthreshold slope of 1.02 V/decade was obtained in the TIPS-pentacene TFT, compared to that (2.63 V/decade) of the pentacene transistor. The interfacial trap density values calculated from the subthreshold slope are about $3.4{\times}10^{12}/cm^2$ and $9.4{\times}10^{12}/cm^2$ for the TIPS-pentacene and pentacene TFTs, respectively. Herein, lower subthreshold slope and less interfacial traps in TIPS-pentacene TFTs are attributed to less domain boundaries in the solution-processed TIPS-pentacene film.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.170-173
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• 2007

Cruciform conjugated molecule, 4(DP3T)-benzene bearing terthiophene moieties has been synthesized through Horner-Emmons Reaction using 5-dodecyl-5"-aldehyde-[2,2';5',2"] terthiophene as dendrons and octaethyl benzene- 1,2,4,5-tetrayltetrakis(methylene)tetraphosphonate as the core unit; this molecule has been fully characterized. The terthiophene-based molecule exhibits good solubility in common organic solvents and good self-film forming property. They are intrinsically crystalline as they exhibit well-defined X-ray diffraction patterns from uniform orientations of molecules. Thus, intermolecular interaction can be enhanced to affect the carrier transport phenomena after annealing at $148^{\circ}C$. The semiconducting property of 4(DP3T)-benzene have been evaluated in organic field-effect transistors. 4(DP3T)-benzene exhibit carrier mobility as high as $(6.6{\pm}0.5)$ ${\times}$ $10^{-6}cm^2V^{-1}s^{-1}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.31-32
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• 2010

In our previous reports [1-3], electron transport for the switching and memory devices using alkyl thiol-tethered Ru-terpyridine complex compounds with metal-insulator-metal crossbar structure has been presented. On the other hand, among organic memory devices, a memory based on the OFET is attractive because of its nondestructive readout and single transistor applications. Several attempts at nonvolatile organic memories involve electrets, which are chargeable dielectrics. However, these devices still do not sufficiently satisfy the criteria demanded in order to compete with other types of memory devices, and the electrets are generally limited to polymer materials. Until now, there is no report on nonvolatile organic electrets using nano-interfaced organic monomer layer as a dielectric material even though the use of organic monomer materials become important for the development of molecularly interfaced memory and logic elements. Furthermore, to increase a retention time for the nonvolatile organic memory device as well as to understand an intrinsic memory property, a molecular design of the organic materials is also getting important issue. In this presentation, we report on the OFET memory device built on a silicon wafer and based on films of pentacene and a SiO2 gate insulator that are separated by organic molecules which act as a gate dielectric. We proposed push-pull organic molecules (PPOM) containing triarylamine asan electron donating group (EDG), thiophene as a spacer, and malononitrile as an electron withdrawing group (EWG). The PPOM were designed to control charge transport by differences of the dihedral angles induced by a steric hindrance effect of side chainswithin the molecules. Therefore, we expect that these PPOM with potential energy barrier can save the charges which are transported to the nano-interface between the semiconductor and organic molecules used as the dielectrics. Finally, we also expect that the charges can be contributed to the memory capacity of the memory OFET device.[4]

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.67-67
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• 2009

• Proceedings of the Korean Society of Potoscience Conference
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• 2006.06a
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• pp.38-38
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• 2006