• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 춘계학술회의 초록집
• /
• pp.17-17
• /
• 2010

The amorphous $Bi_5Nb_3O_{15}$ film grown at room temperature under an oxygen-plasma sputtering ambient (BNRT-$O_2$ film) has a hydrophobic surface with a surface energy of $35.6\;mJm^{-2}$, which is close to that of the orthorhombic pentacene ($38\;mJm^{-2}$, resulting in the formation of a good pentacene layer without the introduction of an additional polymer layer. This film was very flexible, maintaining a high capacitance of $145\;nFcm^{-2}$ during and after 10s bending cycles with a small curvature radius of 7.5 mm. This film was optically transparent. Furthermore, the flexible, pentacene-based, organic thin-film transistors (OTFTs) fabricated on the polyethersulphone substrate at room temperature using a BNRT-$O_2$ film as a gate insulator exhibited a promising device performance with a high field effect mobility of $0.5\;cm^2V^{-1}s^{-1}$, an on/off current modulation of $10^5$ and a small subthreshold slope of $0.2\;Vdecade^{-1}$ under a low operating voltage of -5 V. This device also maintained a high carrier mobility of $0.45\;cm^2V^{-1}s^{-1}$ during the bending with a small curvature radius of 9 mm. Therefore, the BNRT-$O_2$ film is considered a promising material for the gate insulator of the flexible, pentacene-based OTFT.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.96-96
• /
• 2007

Low voltage organic TFTs (OTFTs) and ZnO based TFTs (<5V), utilizing room temperature deposited $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN) thin films were recently reported, pointing to high-k gate insulators as a promising route for realizing low voltage operating flexible electronics. $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN) thin film is one of the most promising materials for gate insulator because of its large dielectric constant (~60) at room temperature. However their tendency to suffer from relatively high leakage current at low electric field (>0.3MV/cm) hinder the application of BZN thin films for gate insulator. In order to improve leakage current characteristics of BZN thin film, we mixed 30mol% MgO with 70mol% BZN and their dielectric and electric properties were characterized. We fabricated field-effect transistors with transparent oxide semiconductor ZnO serving as the electron channel and high-k $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ as the gate insulator. The devices exhibited low operation voltages (<4V) due to high capacitance of the $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ dielectric.

• 반도체디스플레이기술학회지
• /
• 제20권4호
• /
• pp.157-160
• /
• 2021

As an insulator for a thin film transistor(TFT) and an encapsulation material of organic light emitting diode(OLED), aluminum oxide (Al₂O₃) has been widely studied using several technologies. Especially, in spite of low deposition rate, atomic layer deposition (ALD) has been used as a process method of Al₂O₃ because of its low process temperature and self-limiting reaction. In the Al₂O₃ deposition by ALD method, Ar Purge had some crucial effects on the film properties. After reaction gas is injected as a formation of pulse, an inert argon(Ar) purge gas is injected for gas desorption. Therefore, the process parameter of Ar purge gas has an influence on the ALD deposited film quality. In this study, Al₂O₃ was deposited on glass substrate at a different Ar purge time and its structural characteristics were investigated and analyzed. From the results, the growth rate of Al₂O₃ was decreased as the Ar purge time increases. The surface roughness was also reduced with increasing Ar purge time. In order to obtain the high quality Al₂O₃ film, it was known that Ar purge times longer than 15 sec was necessary resulting in the self-limiting reaction.

• 반도체디스플레이기술학회지
• /
• 제22권2호
• /
• pp.1-5
• /
• 2023

In the past, display devices have undergone many changes, such as plasma TVs and LCDs, and have continued to develop. Recently, new display technologies, such as Organic Light Emitting Diode displays and Inorganic Light Emitting Diode displays, have been developed. Among them, Micro LED displays have the potential to improve performance more than LCDs and OLEDs, but a lot of effort and time are needed until the mass production technology (transfer and bonding) of Micro LED displays is developed. We have developed a new Micro LED display light source that can be produced using existing transfer and bonding process technologies to enable faster commercialization of Micro LED in the industry. This light source is TFT deposition on LED. TFT deposition on LED has the advantage of being able to produce displays using existing process technology, making early commercialization of display application products possible. In this study, we applied the Active Driving method to verify the performance of TFT deposition on LED as a display to determine its commercialization potential. Additionally, to facilitate faster application of Micro LED in the industry, we applied TFT deposition on LED to Optical Wireless Communication systems, which are widely used in application service areas such as safety/security and sensors, to verify its communication performance. The experimental results confirmed that TFT deposition on LED is not only capable of AM driving but can also be applied to OWC systems.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.5-5
• /
• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.537-539
• /
• 2006

We developed an 4.5" $192{\times}64$ active matrix organic light-emitting diode display on a glass using organic thin-film transistor (OTFT) switching-arrays with two transistors and a capacitor in each sub-pixel. The OTFTs has bottom contact structure with a unique gate insulator and pentacene for the active layer. The width and length of the switching OTFT is $800{\mu}m$ and $10{\mu}m$ respectively and the driving OTFT has $1200{\mu}m$ channel width with the same channel length. On/off ratio, mobility, on-current of switching OTFT and on-current of driving OTFT were $10^6,0.3{\sim}0.5\;cm^2/V{\cdot}sec$, order of 10 ${\mu}A$ and over 100 ${\mu}A$, respectively. AMOLEDs composed of the OTFT switching arrays and OLEDs made using vacuum deposition method were fabricated and driven to make moving images, successfully.

• Bulletin of the Korean Chemical Society
• /
• 제32권2호
• /
• pp.417-423
• /
• 2011

A series of new quinoxaline-based thiophene copolymers (PQx2T, PQx4T, and PQx6T) was synthesized via Yamamoto and Stille coupling reactions. The $M_ws$ of PQx2T, PQx4T, and PQx6T were found to be 20,000, 12,000, and 29,000, with polydispersity indices of 2.0, 1.2, and 1.1, respectively. The UV-visible absorption spectra of the polymers showed two distinct absorption peaks in the ranges 350 - 460 nm and 560 - 600 nm, which arose from the ${\pi}-{\pi}^*$ transition of oligothiophene units and intramolecular charge transfer (ICT) between a quinoxaline acceptor and thiophene donor. The HOMO levels of the polymer ranged from -5.37 to -5.17 eV and the LUMO levels ranged from -3.67 to -3.45 eV. The electrochemical bandgaps of PQx2T, PQx4T, and PQx6T were 1.70, 1.71, and 1.72 eV, respectively, thus yielding low bandgap behavior. PQx2T, PQx4T, and PQx6T had open circuit voltages of 0.58, 0.42, and 0.47 V, and short circuit current densities of 2.9, 5.29 and 9.05 mA/$cm^2$, respectively, when $PC_{71}BM$ was used as an acceptor. For the solar cells with PQx2T-PQx6T:$PC_{71}BM$ (1:3) blends, an increase in performance was observed in going from PQx2T to PQx6T. The power conversion efficiencies of PQx2T, PQx4T, and PQx6T devices were found to be 0.69%, 0.73%, and 1.80% under AM 1.5 G (100 mW/$cm^2$) illumination.

• 대한전자공학회논문지SD
• /
• 제45권5호
• /
• pp.12-18
• /
• 2008

본 연구는 PC(polycarbonate) 기판 위에 소스(source)/드레인(drain) 전극으로 Ag 페이스트를 스크린 인쇄하여 OTFT(organic thin film transistor)를 제작하였다. 또한 이렇게 제작된 OTFT를 적용하여 OTFT-OLED(organic light emitting diode) 어레이를 제작하였으며 OTFT의 소스 및 드레인 전극과 더불어 데이터 배선전극을 Ag 페이스트를 이용하여 형성하였다. Ag 페이스트는 스크린 마스크의 mesh에 따라 325 mesh용과 500 mesh용을 사용하였으며, 325 mesh용 페이스트는 선폭 60 ${\mu}m$, 500 mesh용 페이스트는 선폭 40 ${\mu}m$까지 인쇄가 가능하였다. 그리고 면저항은 각각 $60m{\Omega}/\square,\;133.1m{\Omega}/\square$이었다. 제작된 OTFT의 성능은 이동도가 자각 0.35 $cm^2/V{\cdot}sec$와 0.12 $cm^2/V{\cdot}sec$, 문턱전압 -4.7 V와 0.9 V이었으며, 전류 점멸비는 ${\sim}10^5$이었다. OTFT-OLED 어레이는 인쇄성이 우수한 500 mesh용 Ag 페이스트를 사용하였으며 OTFT의 채널길이를 50 ${\mu}m$로 설계하여 제작하였다. OTFT-OLED 어레이의 화소는 2개의 OTFT, 1개의 캐패시터 그리고 1개의 OLED로 구성하였고, 크기는 $2mm{\times}2mm$이며, 해상도는 $16{\times}16$ 이다. 제작된 어레이는 일부 불량 화소를 포함하고 있지만 능동형 모드로 동작함을 확인할 수 있었다.

• 한국진공학회지
• /
• 제17권5호
• /
• pp.435-441
• /
• 2008

본 논문은 TIPS Pentacene을 유기반도체로 사용한 유기박막 트랜지스터의 용제에 따른 전기적 특성에 대한 연구로서, 용제로는 chlorobenzene, p-xylene, chloroform, toluene을 사용하였으며, 회전 도포 방법을 사용하여 TIPS pentacene을 혼합하여 적층하였다. chlorobenzene을 사용하여 만들어진 유기박막 트랜지스터는 $1.0{\times}10^{-2}cm^2/V{\cdot}s$의 전계효과 이동도, $4.3{\times}10^3$의 on/off 비율, 5.5 V의 문턱전압의 특성을 보였다. 반대로, chloroform을 사용하여 만들어진 유기박막 트랜지스터는 $5.8{\times}10^{-7}cm^2/V{\cdot}s$의 전계효과 이동도, $1.1{\times}10^2$의 on/off 비율, 1.7 V의 문턱전압의 특성을 보였다. 또한 각 용제에 따른 TIPS pentacene 결정크기를 AFM을 통하여 측정하였다. 이와 같은 결과들을 통하여, 더 높은 끊는점을 가진 용제는 TIPS Pentacene의 더 큰 결정 크기와 높은 결정화 성향으로 인하여 더 좋은 전기적 특성을 가지는 것을 확인할 수 있었으며, 본 실험에서는 끓는점이 가장 높은 chlorobenzene을 사용한 TIPS Pentacene 유기박막 트랜지스터가 가장 좋은 전기적 특성을 나타내는 것을 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
• /
• pp.421-427
• /
• 2009

We successfully fabricated 4.7-inch organic thin film transistors array with $640{\times}480$ pixels on flexible substrate. All the processes were done by photolithography, spin coating and ink-jet printing. The OTFT-Electrophoretic (EP) pixel structure, based on a top gate OTFT, was fabricated. The mobility, ON/OFF ratio, subthreshold swing and threshold voltage of OTFT on flexible substrate are: 0.01 ^2/V-s, 1.3 V/dec, 10E5 and -3.5 V. After laminated the EP media on OTFT array, a panel of 4.7-inch $640{\times}480$ OTFT-EPD was fabricated. All of process temperature in OTFT-EPD is lower than $150^{\circ}C$. The pixel size in our panel is $150{\mu}m{\times}150{\mu}m$, and the aperture ratio is 50 %. The OTFT channel length and width is 20 um and 200um, respectively. We also used OTFT to drive EP media successfully. The operation voltages that are used on the gate bias are -30 V during the row data selection and the gate bias are 0 V during the row data hold time. The data voltages that are used on the source bias are -20 V, 0 V, and 20 V during display media operation.