• 제목/요약/키워드: Organic Transistor

검색결과 367건 처리시간 0.033초

New Fabrication Process of Vertical-Type Organic TFTs for High-Current Drivers

  • Kudo, Kazuhiro;Nakamura, Masakazu
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.307-309
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    • 2009
  • We have fabricated vertical-type organic transistors (static induction transistors; SITs) with built-in nano-triode arrays formed in parallel by a colloidal-lithography technique. Using this technique, we could fabricate a microstructure in a lateral direction within a large-scale organic device without relying on photolithography. The organic transistor showed low operating voltages, high current output, and large transconductance.

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Vertical Type Organic Transistors and Flexible Display Applications

  • Kudo, Kazuhiro
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.168-169
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    • 2007
  • Organic transistors are promising in the future development of active devices for flexible, low-cost and large-area photoelectric devices. However, conventional organic field-effect transistors have lowspeed, low-power, and relatively high operational voltage. Vertical type transistors show high-speed and high-current characteristics and are suitable for driver elements of flexible displays.

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Organic Transistor Characteristics with Electrode Structures (전극 구조에 따른 유기 트랜지스터 특성)

  • Lee, Boong-Joo
    • The Journal of the Korea institute of electronic communication sciences
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    • 제8권1호
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    • pp.93-98
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    • 2013
  • In this paper, We have fabricated PMMA thin films by plasma polymerization method for organic thin film transistor's insulator layer. For improving the characteristics of organic transistor, we tested transistor's mobility and output values with organic transistor's electrode structures. As a results, the mobility of top contact was $8{\times}10^{-3}[cm^2V^{-1}s^{-1}]$, that of bottom contact was $2{\times}10^{-4}[cm^2V^{-1}s^{-1}]$. Also, off current of bottom contact was increased. Therefore, we recommend the top contact electrode structure of organic transistor.

Polymer thin film organic transistor characteristics with plasma treatment of interlayers (플라즈마 표면처리에 따른 유기트랜지스터 특성)

  • Lee, Boong-Joo
    • The Journal of the Korea institute of electronic communication sciences
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    • 제8권6호
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    • pp.797-803
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    • 2013
  • In this paper, we fabricated insulator thin films by plasma polymerization method for organic thin film transistor's insulator layer. For improving the electrical characteristics of organic transistor, we treated the semiconductor thin film with $O_2$ plasma. As results, the surface energy of organic transistor was increased from $38mJ/m^2$ to $72mJ/m^2$ and the mobility of organic transistor was increased $0.057cm^2V^{-1}s^{-1}$, that is increased 29% average ratio. Therefore, we have known that oragnic transistor's mobility can improve with plasma treatment of semiconductor thin film's surface.

Organic Thin Film Transistors with Gate Dielectrics of Plasma Polymerized Styrene and Vinyl Acetate Thin Films

  • Lim, Jae-Sung;Shin, Paik-Kyun;Lee, Boong-Joo
    • Transactions on Electrical and Electronic Materials
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    • 제16권2호
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    • pp.95-98
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    • 2015
  • Organic polymer dielectric thin films of styrene and vinyl acetate were prepared by the plasma polymerization deposition technique and applied for the fabrication of an organic thin film transistor device. The structural properties of the plasma polymerized thin films were characterized by Fourier-transform infrared spectroscopy, X-ray diffraction, atomic force microscopy, and contact angle measurement. Investigation of the electrical properties of the plasma polymerized thin films was carried out by capacitance-voltage and current-voltage measurements. The organic thin film transistor device with gate dielectric of the plasma polymerized thin film revealed a low operation voltage of −10V and a low threshold voltage of −3V. It was confirmed that plasma polymerized thin films of styrene and vinyl acetate could be applied to functional organic thin film transistor devices as the gate dielectric.

Characteristics of vertical type organic light emitting transistor using $C_{60}$ as a N-type semiconductor material and MEH-PPV as an emitting polymer

  • Lee, Jung-Bae;Jin, Hee-Suk;Oh, Se-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.443-445
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    • 2008
  • We have fabricated vertical type organic thin film transistor using $C_{60}$ as a n-type active material to improve the problems of conventional OTFTs. In general, it can be argued that the characteristics of organic transistor were influenced by carrier mobility and density. We have used several kinds of metals as source and gate electrodes to optimize the device characteristics using $C_{60}$. In addition, we have examined the feasibility of fabrication of organic light-emitting transistor (OLET) using MEH-PPV as an emission layer.

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X-shaped Conjugated Organic Materials for High-mobility Thin Film Transistor

  • Choi, Dong-Hoon;Park, Chan-Eon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.310-311
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    • 2009
  • New X-shaped crystalline molecules have been synthesized through various coupling reactions and their electronic properties were investigated. They exhibit good solubility in common organic solvents and good self-film forming properties. They are intrinsically crystalline as they exhibit well-defined X-ray diffraction patterns from uniform and preferred orientations of molecules. They also exhibited high field effect mobilities in thin film transistor (TFT) and good device performances.

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RC Oscillator Based on Organic Thin Film Transistor

  • Kim, Seung-Kyum;Kim, Sang-Woo;Moon, Byeong-Cheon;Choi, Woon-Seop;Bae, Byung-Seong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1336-1339
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    • 2007
  • Since organic thin film transistor (OTFT) provides simple and low cost processes, its application to the OTFT display has been studied. We developed an RC oscillator using organic thin film transistor and inverters with bootstrapping transistors. Device parameters were optimized by the simulation and OTFT RC oscillators were fabricated. The oscillator frequency and its dependence on resistance and bias voltage were studied. The organic TFT is adequate for low cost and simple process integrated circuits. The frequency of oscillation was simulated and measured. It is acceptable for low-cost microelectronic device and flat panel displays.

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Fabrication of Vertical Organic Junction Transistor by Direct Printing Method

  • Shin, Gunchul;Kim, Gyu-Tae;Ha, Jeong Sook
    • Bulletin of the Korean Chemical Society
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    • 제35권3호
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    • pp.731-736
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    • 2014
  • An organic junction transistor with a vertical structure based on an active layer of poly(3-hexylthiophene) was fabricated by facile micro-contact printing combined with the Langmuir-Schaefer technique, without conventional e-beam or photo-lithography. Direct printing and subsequent annealing of Au-nanoparticles provided control over the thickness of the Au electrode and hence control of the electrical contact between the Au electrode and the active layer, ohmic or Schottky. The junction showed similar current-voltage characteristics to an NPN-type transistor. Current through the emitter was simply controllable by the base voltage and a high transconductance of ~0.2 mS was obtained. This novel fabrication method can be applied to amplifying or fast switching organic devices.

Organic thin-film transistors and transistor diodes with transfer-printed Au electrodes

  • Cho, Hyun-Duck;Lee, Min-Jung;Yoon, Hyun-Sik;Char, Kook-Heon;Kim, Yeon-Sang;Lee, Chang-Hee
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1122-1124
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    • 2009
  • Organic thin-film transistors (OTFTs) were fabricated by using the transfer patterning method. In order to remove Au pattern easily, UV-curable polymer mold was surface treated. Au source/drain (S/D) pattern was transferred to insulator-coated substrate surface. Fabricated OTFTs were compared to OTFTs using vacuum-deposited Au S/D. Additionally, transistor diodes were characterized.

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