• Clean Technology
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• v.30 no.1
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• pp.13-22
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• 2024

In this study, blended 6,13-Bis(triisopropylsilylethynyl)pentacene (TP):2-Decyl-7-phenyl[1]benzothieno[3,2-b][1] benzothiophene (BT):Poly styrene (PS) TFT at different ratios were explored for their potential application as light absorption sensors. Due to the mixing of BT, both off current reduction and on/off ratio improvement were achieved at the same time. In particular, the TP:BT:PS (1:0.25:1 w/w) sample showed excellent light absorption characteristics, which proved that it is possible to manufacture a high-performance light absorption device. Through analysis of the crystal structure and electrical properties of the various mixing ratios, it was confirmed that the TP:BT:PS (1:0.25:1 w/w) sample was optimal. The results of this study outline the expected effects of this innovation not only for the development of light absorption devices but also for the development of mixed organic semiconductor (OSC) optoelectronic systems. Through this study, the potential to create a multipurpose platform that overcomes the limitations of using a single OSC and the potential to fabricate a high-performance OSC TFT with a fine-tuned optical response were confirmed.

• Bulletin of the Korean Chemical Society
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• v.35 no.5
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• pp.1356-1364
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• 2014

A new conjugated copolymer, poly{4,8-bis(triisopropylsilylethynyl)benzo[1,2-b:4,5-b']dithiophene-alt-4,7- bis(5-thiophen-2-yl)-5,6-difluoro-2-(heptadecan-9-yl)-2H-benzo[d][1,2,3]triazole} (PTIPSBDT-DFDTBTz), is synthesized by Stille coupling polycondensation. The synthesized polymer has a band gap energy of 1.9 eV, and it absorbs light in the range 300-610 nm. The hole mobility of a solution-processed organic thin-film transistor fabricated using PTIPSBDT-DFDTBTz is $3.8{\times}10^{-3}cm^2V^{-1}s^{-1}$. Bulk heterojunction photovoltaic cells are fabricated, with a conventional device structure of ITO/PEDOT:PSS/polymer:$PC_{71}BM$/Ca/Al ($PC_{71}BM$ = [6,6]-phenyl-$C_{71}$-butyric acid methyl ester); the device shows a power conversion efficiency (PCE) of 2.86% with an open-circuit voltage ($V_{oc}$) of 0.85 V, a short-circuit current density ($J_{sc}$) of 7.60 mA $cm^{-2}$, and a fill factor (FF) of 0.44. Inverted photovoltaic cells with the structure ITO/ethoxylated polyethlyenimine/ polymer:$PC_{71}BM/MoO_3$/Ag are also fabricated; the device exhibits a maximum PCE of 2.92%, with a $V_{oc}$ of 0.89 V, a $J_{sc}$ of 6.81 mA $cm^{-2}$, and an FF of 0.48.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.8
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• pp.653-658
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• 2014

Roll-to-Roll printing process has become a great issue as a breakthrough for low cost and mass production of electronic devices such as organic thin film transistor, and etc. To print the electronic devices, multi-layer printing is essential, and high precision register control is required for this process. Unlike stop-and-repeat printing process, it is impossible to control the register in a static state since the roll-to-roll process is a continuous system. Therefore, the behavior of web such as polyethylene terephthalate (PET) and polyimide (PI) by the tensile and thermal stress generated in the roll-to-roll process as well as motor control of driven rolls has to be considered for a high precision register control. In this study, the correlation between curing temperature and thermal deformation of PET web is analyzed. Finally, it is verified experimentally that the temperature disturbance generates the more serious register error under the higher curing temperature.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.60.1-60.1
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• 2011

비정질 indium-gallium-zinc-oxide (a-IGZO)는 thin film transistor (TFT)에 적용되는 대표적인 active layer로써 높은 이동도를 갖고, 도핑 농도의 제어가 용이하며 낮은 온도에서도 대면적에 증착할 수 있는 특성을 가지고 있다. 특히 저온에서 대면적 증착이 가능한 장점을 갖고 있어 LCD 분야뿐만 아니라 다양한 분야에서 상용화하려는 연구가 시도되고 있다. a-IGZO를 구성하는 물질 중에 이동도에 중요한 역할을 미치는 In은 대표적인 투명전극물질인 indium-tin oxide (ITO)에서 고전류 구동에 의한 확산이 널리 알려져 이에 대한 증명과 개선을 위한 연구가 진행되고 있다. 보고된 결과에 따르면 device에 지속적인 구동 전압을 가했을 때 In이 유기층로 확산되어 organic light emitting diode(OLED)의 성능을 저하시키는 것으로 알려져 있다. 따라서, a-IGZO에서도 고전류 구동에 의한 indium의 이동이 필수불가결하다고 판단된다. 본 연구에서는 a-IGZO TFT에 고전압 구동을 반복적으로 시행함으로써 발생하는 전기적 특성의 변화를 확인하였고, 동일한 소자의 전극과 채널 사이의 계면에서 In 분포를 energy dispersive spectrometer (EDS)로 관찰하여 In 분포와 전기적 특성 간의 상관관계에 대해 연구하였다.

• Journal of Information Display
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• v.10 no.3
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• pp.131-136
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• 2009

This is a report on the fabrication of a flexible OTFT backplane for electrophoretic display (EPD) using a printing technology. A practical printing technology for a polycarbonate substrate was developed by combining the conventional screen and inkjet printing technologies with the wet etching and oxygen plasma processes. For the gate electrode, the screen printing technology with Ag ink was developed to define the minimum line width of ${\sim}5{\mu}m$ and the thickness of ${\sim}70nm$ with the resistivity of ${\sim}10^{-6}{\Omega}{\cdot}cm$, which are suitable for displays with SVGA resolution. For the source and drain (S/D) electrodes, PEDOT:PSS, whose conductivity was drastically enhanced to 450 S/cm by adding 10 wt% glycerol, was adopted. In addition, the modified PEDOT:PSS could be neatly confined in the specific S/D electrode area that had been pretreated with oxygen. The OTFTs that made use of the developed printing technology produced a mobility of ${\sim}0.13cm^2/Vs.ec$ and an on/off current ratio of ${\sim}10^6$, which are comparable to those using thermally evaporated Au for the S/D electrode.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.19.1-19.1
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• 2010

The process of manufacturing printed electronics using printing technology is attracting attention because its process cost is lower than that of the conventional semiconductor process. This technology, which offers both a lower cost and higher productivity, can be applied in the production of organic TFT (thin film transistor), solar cell, RFID(radio frequency identification) tag, printed battery, E-paper, touch screen panel, black matrix for LCD(liquid crystal display), flexible display, and so forth. In general, in order to implement printed electronics, narrow width and gap printing, registration of multi-layer printing by several printing units, and printing accuracy of under $20\;{\mu}m$ are all required. These electronic products require high precision to the degree of tens of microns - in a large area with flexible material, and mass productivity at low cost. As such, the roll-to-roll printing process is attracting attention as a mass production system for these printed electronic devices. For the commercialization of this process, two basic electronic ink technologies, such as conductive ink and polymers, and printing equipment have to be developed. Therefore, this paper addressed basis design and test to develop fine patterning equipment employing the roll-to-roll printing equipment and electronic ink.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.112-112
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• 2011

유기박막 트랜지스터(Organic Thin Film Transistor: OTFT)는 낮은 공정비용과 기존의 고체 실리콘 트랜지스터로서 실혐 할 수 없는 플렉시블 디스플레이, 스마트카드, 태양전지 등의 매우 넓은 활용범위로 각광받고 있는 연구 분야 중 하나이다. 본 연구에서는 열 증발 증착장비(Thermal Evaporator)를 이용하여 펜타센을 활성층으로 사용한 유기박막 트랜지스터를 제작하였다. Heavily doped된 N형 실리콘 기판을 메탄올, 에탄올, 불산 처리를 하여 세척을 한 후 PECVD를 이용하여 SiO2를 200 nm 증착하였다. 그 후 열 증발 증착 장비를 사용하여 펜타센을 활성층으로 사용하였고, 분말 형태의 펜타센의 질량을 15~60 mg으로 조절하여 활성층의 두께를 조절하였다. 펜타센 증착 후 100도에서 열처리를 하고, 그 후 Shadow Mask를 이용하여 전극을 150nm 증착하였다. 이때 전극은 Au, Al, Ni 세가지 종류를 사용하였다. 펜타센의 질량을 조절하여 증착한 활성층의 두께는 60 mg일 때 약 60 nm, 45 mg일 때 약 45 nm로 1:1의 비율로 올라가는 것을 확인 할 수 있었고, 펜타센의 두께가 30 nm일 때 특성이 가장 잘 나오는 것을 볼 수 있었다. 펜타센의 두께가 두꺼울수록 게이트에서 인가되는 전압의 필드가 제대로 걸리지 않아 특성이 나쁘게 나온 것으로 보인다. 또한 활성층을 30 nm로 고정하고 전극의 종류를 바꿔가며 전기적 특성(캐리어 이동도, 문턱전압, 전달특성 등)을 측정 했을 때 전극으로 Al보다는 Au와 Ni를 사용했을 때 전기적 특성이 더 우수하게 나오는 것을 볼 수 있었다. 메탈과 펜타센과의 일함수 차이에 따른 결과로 보여진다.

• Bulletin of the Korean Chemical Society
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• v.28 no.8
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• pp.1358-1362
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• 2007

The structures, energetics and transfer integrals of the acene tetramers up to pentacene are investigated with the ab initio molecular orbital method at the level of second-order Møller-Plesset perturbation theory (MP2). Calculated geometries for the herringbone-style structures found in the crystal structure were characterized as local minima, however the geometrical discrepancy between crystal and MP2 theoretical structure is reasonably small. The binding energy of pentacene tetramer was calculated up to 40 kcal/mol (MP2/6-31G(d)) and about 90 kcal/mol (MP2/aug-cc-pVDZ), and the latter seems to be too much overestimated. The tendency of the hole transfer integrals computed with ab initio MP2/3-21G(d) geometry is well agreement with those estimated with crystal structure with some discrepancy, and the gradual increment of the transfer integrals at the crystal geometry is attributed to mainly packing structure rather than the intrinsic property of acene such as a size of acene.

• Journal of the Korean Society of Safety
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• v.24 no.6
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• pp.50-54
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• 2009

Ionizer is used for improving manufacturing process and reducing inferior goods in the clean room. As a general rule, neutralization of the electrostatic charge is most important to make TFT-LCD, PDP and OLED. Pulse AC-static eliminator with output voltage of about 10.5kV has been used these days as neutralization device. But this device has a problem with lower performance which was caused by particles-adhesion on the electrode when it has been used for a long time. So we studied to solve the problem with lower performance using high Frequency(72kHz) static eliminator which was produced by Piezo transformer device, and compared Pulse-AC type with Piezo-electronic device such as decay time and ion balance for 10 weeks periods. As a result of this study, we found that Piezo transformer device has been maintained normal condition for 10 weeks. Also, we made the rule by this study, normally Piezo transformer device has to clean the electrode during every 11th weeks.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.15.2-15.2
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• 2009

Manufacturing of printed electronics using printing technology has begun to get into the hot issue in many ways due to the low cost effectiveness to existing semi-conductor process. This technology with both low cost and high productivity, can be applied in the production of organic thin film transistor (OTFT), solar cell, radio frequency identification (RFID) tag, printed battery, E-paper, touch screen panel, black matrix for liquid crystal display (LCD), flexible display, and so forth. The emerging technology to manufacture the products in mass production is roll-to-roll printing technology which is a manufacturing method by printings of multi-layered patterns composed of semi-conductive, dielectric and conductive layers. In contrary to the conventional printing machines in which printing precision is about $50~100{\mu}m$, the printing machines for printed electronics should have a precision under $30{\mu}m$. In general, in order to implement printed electronics, narrow width and gap printing, register of multi-layer printing by several printing units, and printing accuracy of under $30{\mu}m$ are all required. We developed the roll-to-roll printing equipment used for printed electronics, which is composed of un-winder, re-winder, tension measurement system, feeding units, dancer systems, guide unit, printing unit, vision system, dryer units, and various auxiliary devices. The equipment is designed based on cantilever type in which all rollers except printing ones have cantilever types, which could give more accurate machine precision as well as convenience for changing rollers and observing the process.