Printing Technologies for the Gate and Source/Drain Electrodes of OTFTs

  • Lee, Myung-Won (Department of Electronics Engineering, Dong-A University) ;
  • Lee, Mi-Young (Department of Electronics Engineering, Dong-A University) ;
  • Song, Chung-Kun (Department of Electronics Engineering, Dong-A University)
  • Published : 2009.09.30

Abstract

This is a report on the fabrication of a flexible OTFT backplane for electrophoretic display (EPD) using a printing technology. A practical printing technology for a polycarbonate substrate was developed by combining the conventional screen and inkjet printing technologies with the wet etching and oxygen plasma processes. For the gate electrode, the screen printing technology with Ag ink was developed to define the minimum line width of ${\sim}5{\mu}m$ and the thickness of ${\sim}70nm$ with the resistivity of ${\sim}10^{-6}{\Omega}{\cdot}cm$, which are suitable for displays with SVGA resolution. For the source and drain (S/D) electrodes, PEDOT:PSS, whose conductivity was drastically enhanced to 450 S/cm by adding 10 wt% glycerol, was adopted. In addition, the modified PEDOT:PSS could be neatly confined in the specific S/D electrode area that had been pretreated with oxygen. The OTFTs that made use of the developed printing technology produced a mobility of ${\sim}0.13cm^2/Vs.ec$ and an on/off current ratio of ${\sim}10^6$, which are comparable to those using thermally evaporated Au for the S/D electrode.

Keywords

References

  1. A. Henzen, J. van de Kamer, T. Nakamura, T. Tsuji, M. Yasui and M. Pitt, in SID'03 Digest, 176 (2003)
  2. S. Maeda, S. Hayashi, K. Ichikawa, K. Tanaka, R. Ishikawa and M. Omodan, in IDW'03 Digest, 1617 (2003)
  3. B. Comiskey, J. D. Albert, H. Yoshizawa and J. Jacobson, Nature, 394, 253 (1998) https://doi.org/10.1038/28349
  4. Z. Bao, Y. Feng, A. Dodabalapur, V. R. Raju and A. Lovinger, Chem. Mater., 9, 1299 (1997) https://doi.org/10.1021/cm9701163
  5. Y. Wu, Y. Li, B. S. Ong, P. Liu, S. Gardner and B. Chiang, Adv. Mater., 17, 184 (2005) https://doi.org/10.1002/adma.200400690
  6. E. J. Brandon, W. West and E. Wesseling, App. Phys. Lett., 83, 3945 (2003) https://doi.org/10.1063/1.1625794
  7. T. Kawase, T. Shimoda, C. Newsome, H. Sirringhaus and R. H. Friend, Thin Solid Films, 438-439, 279 (2003) https://doi.org/10.1016/S0040-6090(03)00801-0
  8. F. Xue, Z. Liu, Y. Su and K. Varahramyan, Microelectron. Eng., 83, 298 (2006) https://doi.org/10.1016/j.mee.2005.09.002
  9. D. J. Kim, S. H. Jeong, S. Lee, B.-K. Park and J.-H. Moon, Thin Solid Films, 515, 7692 (2007) https://doi.org/10.1016/j.tsf.2006.11.141
  10. S. P. Li, D. P. Chu, C. J. Newsome, D. M. Russell, T. Kugler and M.T. Shimoda, App. Phys. Lett., 87, 232111 (2005) https://doi.org/10.1063/1.2140586
  11. J. A. Rogers, Z. Bao and L. Dhar, App. Phys. Lett., 73, 294 (1998) https://doi.org/10.1063/1.121799
  12. J. A. Rogers, Z. Bao, A. Makhija and P. Braun, Adv. Mater., 11, 741 (1999) https://doi.org/10.1002/(SICI)1521-4095(199906)11:9<741::AID-ADMA741>3.0.CO;2-L
  13. M. Leufgen, A. Lebib, T. Muck, U. Bass, V. Wagner, T. Borzenko, G. Schmidt, J. Geurts and L. W. Molenkamp, App. Phys. Lett., 84, 582 (2004)
  14. D. Li and L. J. Guo, J. Phys. D: Appl. Phys., 41, 105115 (2008) https://doi.org/10.1088/0022-3727/41/10/105115
  15. M.W. Lee and C. K. Song, J. Korean Phys. Soc., 47, 111 (2005)
  16. H. S. Byun, Y. X. Xu and C. K. Song, Thin Solid Films, 493, 278 (2005) https://doi.org/10.1016/j.tsf.2005.07.200
  17. J. Pan, G. L. Tonkay and A. Quintero, J. Electron. Manuf., 9, 203 (1999) https://doi.org/10.1142/S096031319900012X
  18. Leif A. A. Pettersson, S. Ghosh and O. Inganas, Org Electron., 3, 143 (2002) https://doi.org/10.1016/S1566-1199(02)00051-4
  19. J. Y. Kim, J. H. Jung, D. E. Lee and J. Joo, Synth Met., 126, 311 (2002) https://doi.org/10.1016/S0379-6779(01)00576-8
  20. S. K. M. Jonsson, J. Birgerson, X. Crispin, G. Greczynski, W. Osikowicz, A. W. Denier van der Gon, W. R. Salaneck and M. Fahlman, Synth Met., 139, 1 (2003) https://doi.org/10.1016/S0379-6779(02)01259-6
  21. J. Ouyang, C. W. Chu, F. C. Chen, Q. Xu and Y. Yang. Adv Funct Mater., 15, 2 203 (2005) https://doi.org/10.1002/adfm.200400016
  22. J. A. Lim, J. H. Cho, Y. D. Park, D. H. Kim, M. Hwang, and K. Cho, Appl. Phys. Lett., 88, 082102 (2006) https://doi.org/10.1063/1.2177642
  23. J. F. Chang, B. Sun, D.W. Breiby, M. M. Nielsen, T. I. Solling, M. Giles, I. McCulloch and H. Sirringhaus, Chem. Mater., 16, 4772 (2004) https://doi.org/10.1021/cm049617w
  24. M. W. Lee and C. K. Song, J. Korean Phys. Soc., 54, 514 (2009) https://doi.org/10.3938/jkps.54.514