• 한국전자통신학회논문지
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• 제5권1호
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• pp.81-87
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• 2010

본 논문에서는 유기발광다이오드 적용을 위한 보호막 혹은 barrier 적용을 위하여 화학증착방법(CVD)를 이용한 실리콘 산화막을 형성하고, 산화막의 특성에 영향을 미치는 공정조건을 변화시켰다. 이로부터 HDP-CVD를 활용한 $SiO_2$박막 증착을 위한 최적의 공정조건은 $SiH_4:O_2$=30:60[sccm]유량, 소스와 기판과의 거리가 70 [mm], 기판에 Bias를 가하지 않은 조건인 경우 8~10[mtorr] 공정압력에서 매우 안정된 플라즈마 형성이 가능한 최적의 공정조건을 얻었다. 얻어진 공정조건으로 제작된 $SiO_2$산화막의 모콘테스트를 통한 투습율(WVTR)을 조사한 결과 2.2 [$g/m^2$_day]값으로 HDP-CVD로 제작된 $SiO_2$산화막은 유기발광다이오드용 보호막으로의 적용이 어려울 것으로 생각된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.297.2-297.2
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• 2013

Scavenging electricity from wasteful energy resources is currently an important issue and piezoelectric nanogenerators (NGs) based on zinc oxide (ZnO) are promising energy harvesters that can be adapted to various portable, wearable, self-powered electronic devices. Although ZnO has several advantages for NGs, the piezoelectric semiconductor material ZnO generate an intrinsic piezoelectric potential of a few volts as a result of its mechanical deformation. As grown, ZnO is usually n-type, a property that was historically ascribed to native defects. Oxygen vacancies (Vo) that work as donors exist in ZnO thin film and usually screen some parts of the piezoelectric potential. Consequently, the ZnO NGs' piezoelectric power cannot reach to its theoretical value, and thus decreasing the effect from Vo is essential. In the present study, c-axis oriented insulator-like sputtered ZnO thin films were grown in various temperatures to fabricate an optimized nanogenerator (NGs). The purity and crystalinity of ZnO were investigated with photoluminescence (PL). Moreover, by introducing a p-type polymer usually used in organic solar cell, it was discussed how piezoelectric passivation effect works in ZnO thin films having different types of defects. Prepared ZnO thin films have both Zn vacancies (accepter like) and oxygen vacancies (donor like). It generates output voltage 20 time lager than n-type dominant semiconducting ZnO thin film without p-type polymer conjugating. The enhancement is due to the internal accepter like point defects, zinc vacancies (VZn). When the more VZn concentration increases, the more chances to prevent piezoelectric potential screening effects are occurred, consequently, the output voltage is enhanced. Moreover, by passivating remained effective oxygen vacancies by p-type polymers, we demonstrated further power enhancement.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.170-170
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• 2013

We present a novel etching technique for 2-dimentional (2-D) hexagonal boron nitride (h-BN) by using capacitively coupled plasma (CCP) of oxygen combined with a post-treatment by de-ionized (DI) water. Oxygen CCP etching process for h-BN has been systematically studied. It is found that a passivation layer was generated to obstruct further etching while it can be easily and radically removed by DI water. An essential cleaning effect also has been observed in the etching process, organic residues are successfully removed and the surface roughness has much decreased. Considering h-BN is the most important 2-D dielectric material and its potential application for graphene to silicon-based electronic devices, such an etching method can be widely used to control the 2-D h-BN thickness and improve the surface quality.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2005년도 제28회 학술발표회 초록집
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• pp.103-103
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• 2005

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1170-1173
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• 2006

Active layer patterned OTFT was obtained on a plastic substrate using the optimal growth condition of pentancene thin films as active layer and parylene thin films as passivation layer. Tranditional photolithography was performed to use a dry etch to pattern the material stack. The pentacene thin film and parylene thin film were deposited onto a plastic substrate using PC-OVD and CVD, respectively.

• 한국광학회지
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• 제5권2호
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• pp.340-346
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• 1994

2.5Gbps 광통신시스템용 수광소자로서 charge plate층을 갖는 링구조의 separate absorption grading multiplication avalanche photodiode를 제작하고 그 특성을 조사 분석하였다. Avalanche Photodiode의 제작은 Metal-Organic Chemical Vapor Deposition 과 Liquid Phase Epitaxy법을 이용한 에피성장과 Br:Methanol을 이용한 채널식각 방법을 사용하였고, passivation과 평탄화는 photosensitive polyimide를 이용하였다. 제작된 ADP는 10nA 이하의 작은 누설전류를 나타내었고, -38~39 V의 항복전압을 나타내었다. 제작된 ADP를 GaAs FET hybrid 전치증폭기와 결합하여 2.5Gbps 속도에서 $2^{23}-1$의 길이를 갖는 입력 광신호에 대해 $ 10^{-10}$ Bit Error Rate에서 -31.0dBm의 수신감도를 얻었다.

• 전자공학회논문지D
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• 제34D권7호
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• pp.15-22
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• 1997

A 10Gbit/s limiting amplifier IC for optical transmission system was implemented with AlGaAs HBT (heterojunction bipolar transistor) technology. HBTs with 2x10.mu. $m^{2}$ and 6x20.mu. $m^{2}$ emitter size were used. The HBT structures are based on metal-organic chemical vapor deposition (MOCVD) epitxy and employ a mesa structure with self-aligned emitter/base and sidewall dielectric passivation. IC was designed to support differnetial input and output. Small signal performance of the packaged IC showed 26dB gain and $f_{3dB}$ of 8GHz. A single ouput has 800m $V_{p-p}$ swing with more than 26dB dynamic range. The performance of the limiting amplifier was verified through single mode fiber320km transmission link test.est.

• 산업기술연구
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• 제19권
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• pp.101-105
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• 1999

Ultra thin $Ta_2O_5$ gate dielectrics were prepared by RTMOCVD (rapid thermal metal organic chemical vapor deposition) using Ta source $TaC_{12}H_{30}O_5N$ and $O_2$ gaseous mixtures. As a result, $Ta_2O_5$ thin films showed significantly low leakage current compared to $SiO_2$ of identical thickness, which was due to the stabilization of the interfacial layer by NO ($SiO_xN_y$) passivation layer. The conduction of leakage current in $Ta_2O_5$ thin films was described by the hopping mechanism of Poole-Frenkel (PF) type.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.249-249
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• 2010

The effect of forming a passivation layer was investigated in superconformal Cu gap-filling of the nano-scale trench with atomic-layer deposited (ALD)-Ru glue layer. It was discovered that the nucleation and growth of Cu during metal-organic chemical vapor deposition (MOCVD) were affected by hydrogen plasma treatments. Specifically, as the plasma pretreatment time increased, Cu nucleation was suppressed proportionally. XPS and Thermal Desorption Spectroscopy indicated that hydrogen atoms passivate the Ru surface, which leads to suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. For gap-fill property, sub 60-nm ALD Ru trenches without the plasma pretreatment was blocked by overgrown Cu after the Cu deposition. With the plasma pretreatment, superconformal gap filling of the nano-scale trenches was achieved due to the suppression of Cu nucleation near the entrances of the trenches. Even the plasma pretreatment with bottom bias leads to the superconformal gap-filling.

• 통합자연과학논문집
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• 제14권4호
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• pp.147-154
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• 2021

A luminescent porous silicon sensor, whose surface was passivated with organic molecule via hydrosilylation under various conditions, has been researched to measure the photoluminescence (PL) stability of porous silicon (PSi). Photoluminescent PSi were synthesized by an electrochemical etching of n-type silicon wafer under the illumination with a 300 W tungsten filament bulb during the etching process. The PL of PSi displayed at 650 nm, which is due to the quantum confinement of silicon quantum dots in the PSi. To stabilized the photoluminescence of PSi, the hydrosilylation of PSi with silole molecule containg vinyl group was performed. Surface morphologies of fresh PSi and surface-modified PSi were obtained with a cold FE-SEM. Optical characterization of red photoluminescent silicon quantum dots was investigated by UV-vis and fluorescence spectrometer.