• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.173-177
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• 2008

We have developed the transparent passivation layer for top emission organic light emitting diodes using CsCl thin film by the thermal evaporation method. The CsCl film was deposited on the Ca/Ag semitransparent cathode. The optical transmittance of Ca/ Ag/CsCl triple layer is higher than that of Ca/Ag double layer in the visible range. The device with a structure of glass/Ni/2-TNATA/a-NPD/Alq3:C545T/BCP/Alq3/Ca/Ag/CsCl results in higher efficiency than the device without CsCl passivation layer. The device without CsCl thin film shows a current efficiency of 7 cd/A, whereas the device passivated with CsCl layer shows an efficiency of 10 cd/A. This increase of efficiency isresulted from the increased optical extraction by the CsCl passivation layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.191-191
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• 2007

By employing a photo-sensitive PVA as a photoresist, we first demonstrated simultaneous patterning and passivation of P3HT active layer. The passivation layers were obtained by annealing the organic layers after developing PVA and over-etching the P3HT layer. The fabricated OTFTs were electrically characterized. The OTFTs after the passivation exhibited the field-effect of ${\sim}5.9{\times}10^{-4}cm^2/V{\cdot}s$, on/off current ratio of ${\sim}10^3$. The value of OTFTs a little degradation with time in air but it appeared different unpassivated OTFT.

• Korean Chemical Engineering Research
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• 제50권3호
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• pp.574-581
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• 2012

OLED 소자는 수분과 산소의 침투에 의하여 유기물이 열화되어 수명이 감소하는 문제점을 가지고 있다. 이러한 문제점을 해결하기 위해서 OLED 소자의 봉지 기술이 최근 연구되고 있다. 현재 유리나 금속 용기를 이용하여 캡슐화 하는 방법이 널리 사용되고 있지만 이러한 방법으로는 유연한(flexible) 소자의 구현이 어렵기 때문에 이를 대체할 수 있는 기술들이 연구되고 있다. 박막 필름을 이용한 OLED의 봉지 기술은 유연한 디스플레이에 적용할 수 있는 기술로 사용될 수 있다. 본 연구에서는 치밀하고 결함이 없는 패시베이션(passivation) 박막을 형성하기 위해서 상온에서 증착이 가능한 PECVD를 이용한 무기 박막 증착 방법을 개발하고 증착 조건과 구조에 따른 OLED의 특성 변화를 분석하였다. 하나의 시스템에서 in-situ로 패시베이션할 수 있는 시스템 및 공정을 구축하였으며 단일 무기 박막의 WVTR(Water Vapor Transmission Rate) 값을 $1{\times}10^{-2}g/m^2{\cdot}day$ 이하로 확보하였고 제작된 박막을 패시베이션막으로 유연한 디스플레이에 적용할 수 있는 가능성을 제시하였다.

• 마이크로전자및패키징학회지
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• 제21권4호
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• pp.105-110
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• 2014

재생에너지 광소자로서 스마트 농장 등의 에너지원으로서 고분자 태양전지의 응용이 기대되며 향후 상업화를 위해 효율과 신뢰성 개선이 요구된다. 본 연구에서는 유기 패시베이션 박막을 가지는 헤테로정션 고분자태 전지를 제작하고, 패시베이션 박막이 고분자 태양전지의 특성에 미치는 영향을 조사하였다. 사용된 패시베이션 유기재료로는 폴리비닐알코올과 이크롬산 암모늄을 혼합하여 용해한 후 스핀코팅방법으로 P3HT:$PC_{61}BM$/LiF/Al 기판위에 코팅하여 소자를 제작하였다. 제작된 소자구조는 glass/ITO/PEDOT:PSS/P3HT:$PC_{61}BM$/LiF/Al/passivation layer 이며, 140시간 공기 중에 노출 후 전기적 특성을 측정, 비교한 결과, 패시베이션 처리된 고분자 태양전지가 패시베이션 박막 처리되지 않은 소자에 비해 보다 우수한 전기적 특성을 보여주었다. 즉, 패시베이션 처리된 소자의 전력변환효율은 제작직후 3.0%에서 140시간 노출 후 1.3%로 감소한 반면 패시베이션 처리되지 않은 소자의 경우는 동일한 노출조건에서 3.5%에서 0.1%로 급격한 특성저하를 나타내었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.420-423
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• 2008

The characteristics of $Al_2O_3/Ag/Al_2O_3$ multilayer passivaton prepared by twin target sputtering (TTS) system for organic light emitting diodes. The $Al_2O_3/Ag/Al_2O_3$ multilayer thin film passivation on a PET substrate had a high transmittance of 86.44 % and low water vapor transmission rate (WVTR) of $0.011\;g/m^2$-day due to the surface plasmon resonance (SPR) effect of Ag interlayer and effective multilayer structure for preventing the intrusion of water vapor. Using synchrotron x-ray scattering and field emission scanning electron microscope (FESEM) examinations, we investigated the growth behavior of Ag layer on the $Al_2O_3$ layer to explain the SPR effect of the Ag layer. This indicates that an $Al_2O_3/Ag/Al_2O_3$ multilayer passivation is a promising thin film passivation scheme for organic based flexible optoelectronics.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1480-1483
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• 2005

Transparent thin composite films (TCFs) were deposited on OLED devices by means of RF sputtering method and their passivation-properties were evaluated by comparing to the e-beam evaporating method. This composite film formed by mixed ratio of MgO (3wt %): $SiO_2$ (1wt %) was developed from pallet as a source of e-beam evaporator to 6-inch size target for sputtering in order to apply for large-sized organic display devices. Water Vapor Transmission Rates (WVTR) of the deposited films were measured as a function of thickness to assess the effectiveness of this film as a passivation layer and it applied to real devices. From this study, we can confirm that the passivation layer formed by TCFs using RF sputtering method sufficiently shows the potentiality of application to passivation layer for organic display devices.

• 한국전기전자재료학회논문지
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• 제19권6호
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• pp.538-546
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• 2006

We report on characteristics of specially designed inductively-coupled-plasma chemical vapor deposition (ICP-CVD) system for top-emitting organic light emitting diodes (TOLEDs). Using high-density plasma on the order of $10^{11}$ electrons/$cm^3$ generated by linear-type antennas connected in parallel and specially designed substrate cooling system, a 100 nm-thick transparent $SiN_{x}$ passivation layer was deposited on thin Mg-Ag cathode layer at substrate temperature below $50\;^{\circ}C$ without a noticeable plasma damage. In addition, substrate-mask chucking system equipped with a mechanical mask aligner enabled us to pattern the $SiN_x$ passivation layer without conventional lithography processes. Even at low substrate temperature, a $SiN_x$ passivation layer prepared by ICP-CVD shows a good moisture resistance and transparency of $5{\times}10^{-3}g/m^2/day$ and 92 %, respectively. This indicates that the ICP-CVD system is a promising methode to substitute conventional plasma enhanced CVD (PECVD) in thin film passivation process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.71-72
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• 2006

We report on plasma damage free chemical vapor deposition technique for the thin film passivation of organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays using catalyzer enhanced chemical vapor deposition (CECVD). Specially designed CECVD system has a ladder-shaped tungsten catalyzer and movable electrostatic chuck for low temperature deposition process. The top emitting OLED with thin film $SiN_x$ passivation layer shows electrical and optical characteristics comparable to those of the OLED with glass encapsulation. This indicates that the CECVD technique is a promising candidate to grow high-quality thin film passivation layer on OLED, OTFT, and flexible displays.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.160-160
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• 2010

Organic electronic devices require a passivation layer to ensure sufficient lifetime. Specifically, flexible organic electronic devices need a barrier layer that transmits less than $10^{-6}\;g/m^2/day$ of water and $10^{-5}\;g/m^2/day$ of oxygen. To increase the lifetime of organic electronic device, therefore, it is indispensable to protect the organic materials from water and oxygen. Severe groups have reported on multi-layerd barriers consisting inorganic thin films deposited by plasma enhenced chemical deposition (PECVD) or sputtering. However, it is difficult to control the formation of granular-type morphology and microscopic pinholes in PECVD and sputtering. On the contrary, atomic layer deoposition (ALD) is free of pinhole, highly uniform, conformal films and show good step coverage. In this study, the passivation layer was deposited using single-process PEALD. The passivation layer, in our case, was a bilayer system consisting of $Al_2O_3$ films and a $TiO_2$ buffer layer on a poly (ether sulfon) (PES) substrate. Because the deposition temperature and plasma power have a significant effect on the properties of the passivation layer, the characteristics of the $Al_2O_3$ films were investigated in terms of density under different deposition temperatures and plasma powers. The effect of the $TiO_2$ buffer layer also was also addressed. In addition, the water vapor transmission rate (WVTR) and organic light-emitting diode (OLEDs) lifetime were measured after forming a bilayer composed of $Al_2O_3/TiO_2$ on a PES substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.695-698
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• 2006

The photosensitive poly-siloxane material used as the passivation layers for the conventional back channel etched (BCE) thin film transistors (TFTs) has been investigated. Through the organic material, the TFT array fabrication process can be reduced and higher aperture ratio can be achieved for higher LCD panel performance. The interface between the organic passivation layer and the back channel of the amorphous active region has been improved by the back channel oxygen treatment and the devices exhibits lower leakage current than the conventional silicon nitride passivation layer of BCE TFTs. The leakage currents between Indium-tin-oxide (ITO) pixels and the TFT devices and its mechanism have also been investigated in this paper.