• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.159-159
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• 2008

Indium-tin oxides (ITO) films have been widely used as transparent electrodes for optoelectronic devices such as organic light emitting diodes (OLEDs), photovoltaics, touch screen devices, and flat-paneldisplay. In particular, to improve hole injection efficiency in OLEDs, transparent electrodes should have high work-function besides their transparency and low resistivity. Nevertheless, few studies have been made on engineering the work function of ITO for use as an efficient anode. In this study, the effects of a wide range of Nb or Zn doping rate on the changes in work functions of ITO anode were investigated. The Nb or Zn doped ITO films were fabricated on glass substrates using combinatorial sputtering system which yields a linear composition spread of Nb or Zn concentration in ITO films in a controlled manner by co-sputtering two targets of ITO and Nb2O5 or ITO and ZnO. We have also examined the resistivity, transmittance, and other structural properties of the Nb or Zn-doped ITO films. Furthermore, OLEDs employing Nb or Zn-doped ITO anodes were fabricated and the device performances were investigated concerned with the work function changes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.379-379
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• 2007

The characteristics of indium-zinc-tin-oxide (IZTO)-Ag-IZTO multilayer grown on a PET substrate were investigated for flexible organic light-emitting diodes. The IZTO-Ag-IZTO (IAI) multilayer anode exhibited a remarkably reduced sheet resistance of 4 ohm/sq and a high transmittance of 84%, despite the very thin thickness of the IZTO (30 nm) layer. In addition, it was shown that electrical and optical properties of IAI anodes are critically dependent on the thickness of the Ag layer, due to the transition of Ag atoms from distinct islands to continuous films at a critical thickness (14 nm). Moreover, the IAI/PET sample showed more stable mechanical properties than an amorphous ITO/PET sample during the bending test due to the existence of a ductile Ag layer. The current density voltage-luminance characteristics of flexible OLEDs fabricated on an IAI/PET substrate was better than those of flexible OLEDs fabricated on an ITO/PET substrate. This indicates that IAI multilayer anodes are promising flexible and transparent electrodes for flexible OLEDs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.29-30
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• 2007

In a device structure of ITO/tris(8-hydroxyquinoline) aluminum $(Alq_3)$/Al device, We investigated an the electrical characteristics of Organic Light-Emitting Diodes (OLEDs) depending on the hole-size of boat. The device was manufactured using a thermal evaporation under a base pressure of $5{\times}10^{-6}$ [Torr]. The $Alq_3$ organics were evaporated to be 100 [nm] thick at a deposition rate of $1.5[{\AA}/s]$, and in order to investigate the optimal surface roughness of $Alq_3$, the $Alq_3$ was thermally evaporated to be 0.8 [mm], 1.0 [mm], 1.5 [mm], and 3.0 [mm] as a hole-size of the boat respectively. We found that when the hole-size of the boat is 1.0 [mm], luminance and external quantum efficiency are superior.

• 한국재료학회지
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• 제13권3호
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• pp.191-194
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• 2003

The influence of on ion beam irradiation to the indium tin oxide (ITO) substrate on the performance of the organic light-emitting diodes (OLEDs) was studied. ITO films were used as the transparent anode of OLEDs with poly(2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) as a hole-injection/transport layer. Oxygen and argon plasma treatment of ITO resulted in a change in the work function and the chemical composition. For plasma treated ITO anodes, the device efficiency clearly correlated with the value of the work function. We also discussed the implications of our experimental study in relation to the modification of the ITO surface composition, transmittance, reflectance, and water contact angle (WCA).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.137-140
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• 2004

We treated $O_2$ plasma on ITO thin film using RIE (Reactive Ion Etching) system, and analyzed the ingredient of ITO thin film according to change of processing conditions. The ingredient analysis of ITO thin film was used by EDS (Energy Dispersive Spectroscopy) and XPS (X-ray Photoelectron Spectroscopy) to compare and analyze the ingredient of bulk and surface. We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by using AFM (Atomic Force Microscope). Finally, we fabricated OLEDs (Organic Light-Emitting Diodes) device using substrate that was treated optimum ITO surface. The result of the study for electrical and optical properties using I V L System (Flat Panel Display Analysis System), we confirmed that electrical properties (I-V) and optical properties (L-V) were improved.

• 한국전기전자재료학회논문지
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• 제32권1호
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• pp.40-46
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• 2019

To study the frequency response characteristics of alternating-current-driven organic light-emitting diodes (OLEDs), we fabricated blue-fluorescent OLEDs and analyzed their electroluminescent characteristics according to the alternating current voltage and frequency. The luminance-frequency characteristics of alternating-current-driven OLED was similar to that of a low-pass filter, and the luminance of high-voltage OLED decreased at higher frequency than low-voltage OLED. The luminance characteristics of the OLED according to the frequency is due to the capacitive reactance in the OLED, generated during the alternating current driving. The frequency response characteristics of the OLED according to the voltage is due to the decrease in internal resistance of the organic layer. In addition, the negative voltage component of the alternating current did not affect the frequency response of the OLED. Therefore, the electroluminescent characteristics of OLED with an alternating current power of 60 Hz are not influenced by the frequency.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.503-505
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• 2008

A host material containing tetraphenylsilane, 9-(4-triphenylsilanyl-(1,1'4,1")-terphenyl-4"-yl)-9H-cabazole (TSTC), was synthesized for green phosphorescent organic emitting diodes. $Ir(ppy)_3$ based OLEDs using TSTC host and DTBT (2,4-diphenyl-6-(4'yl)-1,3,5-triazine) hole blocking layer (HBL) showed the maximum external quantum efficiency of 19.8 %, the power efficiency of 59.4 lm and high operational stability with a half lifetime of 160,000 h at an initial luminance of $100\;cd/m^2$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.956-960
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• 2006

Deep-blue organic light-emitting diodes (OLEDs) with/without ultra-thin LiF layer inserted at the interface between hole-blocking and electron-transporting layers have been fabricated and investigated. The fundamental structures of the OLEDs are ITO/m-MTDATA/NPB/BCP/LiF (with/ without)/ $Alq_3/LiF/Al.Deep$ blue light emission with CIE coordinate of (0.15, 0.11) has been achieved for all devices. Further, by inserting LiF with thickness of 1nm at the interface between BCP and $Alq_3$ layer, the luminous efficiency as well as the power efficiency is much improved compared to that without. The enhancement of electron injection due to insertion of LiF may account for this improvement.

• 대한금속재료학회지
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• 제49권10호
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• pp.811-817
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• 2011

In this study, we have investigated the role of a metal oxide hole injection layer (HIL) between an Indium Tin Oxide (ITO) electrode and an organic hole transporting layer (HTL) in organic light emitting diodes (OLEDs). Nickel Oxide films were deposited at different deposition times of 0 to 60 seconds, thus leading to a thickness from 0 to 15 nm on ITO/glass substrates. To study the influence of NiO film thickness on the properties of OLEDs, the relationships between NiO/ITO morphology and surface properties have been studied by UV-visible spectroscopy measurements and AFM microscopy. The dependences of the I-V-L properties on the thickness of the NiO layers were examined. Comparing these with devices without an NiO buffer layer, turn-on voltage and luminance have been obviously improved by using the NiO buffer layer with a thickness smaller than 10 nm in OLEDs. Moreover, the efficiency of the device ITO/NiO (< 5 nm)/NPB/$Alq_3$/ LiF/Al has increased two times at the same operation voltage (8V). Insertion of a thin NiO layer between the ITO and HTL enhances the hole injection, which can increase the device efficiency and decrease the turn-on voltage, while also decreasing the interface roughness.

• Transactions on Electrical and Electronic Materials
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• 제6권5호
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• pp.233-237
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• 2005

In the device structure of ITO/hole injection layer/N, N'-biphenyl-N, N'-bis-(1-naphenyl)-[1,1'-biphenyl]4,4'-diamine(NPB)/tris(8-hydroxyquinoline) aluminum$(Alq_3)/Al$, we investigated an effect of hole-injection materials (PTFE, PVK) on the electrical characteristics and efficiency of organic light-emitting diodes. A thermal evaporation was performed to make a thickness of NPB layer with a evaporation rate of $0.5\~1.0\;\AA/s$ in a base pressure of $5\times10^{-6}$ Torr. We measured current-voltage characteristics and efficiency with a thickness variation of hole-injection layer. The PTFE and PVK hole-injection layer improve a performance of the device in several aspects, such as good mechanical junction, reducing the operating voltage and energy band adjustment. Compared with the devices without a hole-injection layer, we have obtained that an optimal thickness of NPB was 20 nm in the device structure of $ITO/NPB/Alq_3/Al$. And using the PTFE or PVK hole-injection layer, the external quantum efficiencies of the devices were improved by $24.5\%\;and\;51.3\%$, respectively.