• Title/Summary/Keyword: Opto-electronic device

Search Result 31, Processing Time 0.045 seconds

Shock and Vibration Reduction of the Opto-Electronic Protective Device for the Press Machine (프레스 광전자식 방호장치의 충격진동 저감)

  • Choi, Seung-Ju
    • Journal of the Korean Society of Safety
    • /
    • v.26 no.5
    • /
    • pp.13-16
    • /
    • 2011
  • The vibration and shock of the opto-electronic protective device was induced mechanical failure or fail to work correctly. In order to identify the exciting frequency components of vibration and shock, vibration signals are measured and analyzed from the mechanical power press. In addition, the modal test for the opto-electronic protective device was performed to investigate the dynamic characteristics. Some FEM simulations were carried out and then anti vibration mount was made for opto-electronic protective device. Based on the results of simulations, some kind of rubber mounts were tested to demonstrate the reduction of vibration and shock. It was verified by the test that a considerable amount of vibration and shock were reduced.

Study on the Hybrid Passivation layer of OLEDs using the Organic/Inorganic Thin Film (유/무기 복합 박막을 이용한 유기발광 소자의 보호층에 관한 연구)

  • Bae, Sung-Jin;Lee, Joo-Won;Lee, Young-Hoon;Kang, Nam-Soo;Kim, Dong-Young;Hwang, Sung-Woo;Kim, Jai-Kyung;Ju, Byeong-Kwon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2006.04a
    • /
    • pp.78-80
    • /
    • 2006
  • The hybrid thin-film (HTF) passivation layer composed of the Ultra Violet (UV) curable acrylate layer and MS-31 (MgO:$SiO_2$=3:1wt%) layer was adopted in organic light emitting device (OLEO) to protect organic light emitting materials from penetrations of oxygen and water vapors. The results showed that the HTF layer possessed a very low WVTR value of lower than $0.007gm/m^{2+}day$ at $37.8^{\circ}C$ and 100% RH. This value was within the limited range of the sensitivity of WVTR measurements. And the lifetime of the HTF passivated device became almost three times longer than that of the bare device. The HTF on the OLEO was found to be very effective in protect what from the penetrations of oxygen and moisture.

  • PDF

Effect of the thickness of an emitting zone by the thin alkali compound films for highly efficient $Alq_3-based$ OLEDs

  • Kim, Young-Min;Lee, Joo-Won;Park, Jung-Soo;Kim, Jai-Kyeong;Sung, Man-Young;Ju, Byeong-Kwon;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2005.07b
    • /
    • pp.1306-1309
    • /
    • 2005
  • Highly efficient and bright organic light-emitting diodes (OLEDs) have been realized using the thin alkali compound films (TACFs) at the interface between an emitting layer and an electron transporting layer with conventional organic layers. By comparing the performance of the device as a function of position with the TACFs, we propose the optimal position of the TACFs in the tris-(8-hydroxyquinoline) aluminum (Alq3). A device with the ACFs showed high luminance of over 12 500 cd/m2, luminance efficiency of more than 12 cd/A, and power efficiency of more 4.5 lm/W, respectively.

  • PDF

The Study of Opto-electric Properties in EL Device with PMN Dielectric Layer (PMN 계 유전체 적용 EL 소자의 광전특성 연구)

  • Kum, Jeong-Hun;Han, Da-Sol;Ahn, Sung-Il;Lee, Seong-Eui
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.22 no.9
    • /
    • pp.776-780
    • /
    • 2009
  • In this study, the opto-electric properties of EL devices with PMN dielectric layer with variation of firing tempereature were investigated. For the PMN dielectric layer process, the paste was prepared by optimization of quantitative mixing of PMN powder, $BaTiO_3$, Glass Frit, $\alpha$-Terpineol and ethyl cellulose. The EL device stack consists of Alumina substrate ($Al_2O_3$), metallic electrode (Au), insulating layer (manufactured PMN paste), phosphor layer (ELPP- 030, ELK) and transparent electrode (ITO), which is well structure as a thick film EL device. The phase transformation properties of PMN dielectric with various firing temperatures of $150^{\circ}C$ to $850^{\circ}C$ was characterized by XRD. Also the opto-electric properties of EL devices with different firing temperature were investigated by LCR meter and spectrometer. We found the best opto-electric property was obtained at the condition of $550^{\circ}C$ firing which is 3432.96 $cd/m^2$ at 1948.3 pF Capacitance, 40 kHz Frequency, 40% Duty, Vth+330 V voltage.

Controlling Intermolecular Interactions, Optical Property, and Charge Transport in Conjugated Polyelectrolytes for Applications in Opto-electronics Devices

  • Nguyen, Thuc-Quyen;Garcia, Andres;Yang, Renqiang;Bazan, Guillermo
    • Proceedings of the Polymer Society of Korea Conference
    • /
    • 2006.10a
    • /
    • pp.229-229
    • /
    • 2006
  • Recently there has been significant interest in utilizing functional semiconductor polymers for electronic and opto-electronic devices such as Light-emitting diodes, thin film field effect transistors, solar cells, displays, and chemical and biosensors. However, better materials and further understanding of their electronic properties are critical for devices based on these materials. In this work, we use various scanning probe techniques, spectroscopy, and device fabrication to study the molecular interactions, optical and charge transport properties in conjugated polyelectrolytes. Using chemical synthesis approach, we are able to tune the molecular packing and interactions in these materials, which in turn, influence their electronic properties and device performance.

  • PDF

The Study of opto-electrics characteristics of Inorganic EL(Electro luminescent) Device with combination of high dielectric constant layer (강유전체를 적용한 무기전계발광소자의 광전특성연구)

  • Lee, Gun-Sub;Lee, Seong-Eui
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2008.06a
    • /
    • pp.407-407
    • /
    • 2008
  • 무기EL 디스플레이는 고체재료에 전계를 가했을 때 발광하는 현상을 이용한소자로서, 급속도로 발전을 거듭하고 있으나, 유전체층에 강한전계를 가하여 발광하여야 하므로 낮은 Breakdown voltage와 효율의 한계로 인하여 휘도가 낮고 풀 컬러화 디스플레이 등 의 응용에는 적용되고 있지 못하는 실정이다. 본 연구에서는 강유전체 Perovskite 구조를 가지는 ABO3 물질 중 PMN(Lead Magnesium niobate) 과 PZT (Lead Zirconate titanate) 후막을 제조하여 Inorganic EL(Electro Luminance)에 적용하고 소자의 광전특성을 평가하였다. 소자에 사용된 기판은 고온소성에 알맞은 알루미나(Al2O3)기판을 채택 하였으며, 그 위 하부전극으로는 고온소성에 따른 화학적 안정성이 우수한 Au전극을 Screen Printing 하였다. 제조 되어진 PMN후막 페이스트는 PMN(Pb(Mg1/2 Nb2/3)O3) + Glass Frit(Pb-Zn-B) + BaTiO3(99.99%) 로 합성되었으며 하부전극위에 인쇄하였다. 그 다음 PZT sol-gel을 Spin coating으로 도포 하였다. 형광체로 ZnS:Cu.Cl 을 Screen Printing을로 형성하였으며, 평탄화를 위하여 유기물 충을 Screen Printing 공정으로 성막 하였다. 상부전극으로는 DC sputter로 ITO를 증착하여 EL소자 완성 후 Spectro - Chroma meter로 소자특성을 측정하였다. 평탄화를 통한 유기물층에 변화되는 Capacitance를 Oscilloscope로 전압 전류 pulse의 변화에 따른 opto-electronic 특성을 평가하였다.

  • PDF

Performance improvement of countercurrent-flow membrane gas absorption in a hollow fiber gas-liquid membrane contactor

  • Ho, Chii-Dong;Sung, Yun-Jen;Chen, Wei-Ting;Tsai, Feng-Chi
    • Membrane and Water Treatment
    • /
    • v.8 no.1
    • /
    • pp.35-50
    • /
    • 2017
  • The theoretical membrane gas absorption module treatments in a hollow fiber gas-liquid membrane contactor using Happel's free surface model were obtained under countercurrent-flow operations. The analytical solutions were obtained using the separated variable method with an orthogonal expansion technique extended in power series. The $CO_2$ concentration in the liquid absorbent, total absorption rate and absorption efficiency were calculated theoretically and experimentally with the liquid absorbent flow rate, gas feed flow rate and initial $CO_2$ concentration in the gas feed as parameters. The improvements in device performance under countercurrent-flow operations to increase the absorption efficiency in a carbon dioxide and nitrogen gas feed mixture using a pure water liquid absorbent were achieved and compared with those in the concurrent-flow operation. Both good qualitative and quantitative agreements were achieved between the experimental results and theoretical predictions for countercurrent flow in a hollow fiber gas-liquid membrane contactor with accuracy of $6.62{\times}10^{-2}{\leq}E{\leq}8.98{\times}10^{-2}$.

Mass transfer in cross-flow dialyzer with internal recycle

  • Yeh, Ho-Ming;Chen, Chien-Yu
    • Membrane and Water Treatment
    • /
    • v.4 no.4
    • /
    • pp.251-263
    • /
    • 2013
  • The internal reflux effect on dialysis through the retentate phase of a countercurrently cross-flow rectangular module is investigated. Theoretical analysis of mass transfer in cross-flow devices with or without recycling is analogous to heat transfer in cross-flow heat exchangers. In contrast to a device without reflux, considerable mass transfer is achievable if cross-flow dialyzers are operated with reflux, which provides an increase in fluid velocity, resulting in a reduction in mass-transfer resistance. It is concluded that reflux can enhance mass transfer, especially for large flow rate and feed-concentration operated under high reflux ratio.

Polarization Bistability in a Feedback Hybrid Opto-electronic Device (되먹임 혼성 광 간섭계에서의 편광 광쌍안정)

  • 김성규;유영훈;임동건
    • Korean Journal of Optics and Photonics
    • /
    • v.2 no.1
    • /
    • pp.26-30
    • /
    • 1991
  • TO study the polarization optical bistability (POB), we constructed the hybrid opto-electronic interferometer which has orthogonal polarized lights and one of the optical phases is modulated by a feedback signal. And we developed the theoretical POB equation for this system and observed the POB by varying input intensity of the light and initial phase experimentally.

  • PDF

Effects of an External Magnetic Field on the Magnetic Properties of Sputtered Magnetic Thin Films (스퍼터링 중 외부자기장이 자성박막의 자기적 특성에 미치는 영향)

  • Ahn, Hyun Tae;Lim, Sang Ho;Jee, Kwang Koo;Han, Jun Hyun
    • Korean Journal of Metals and Materials
    • /
    • v.49 no.6
    • /
    • pp.505-513
    • /
    • 2011
  • A magnetic device which enables the application of a strong and uniform magnetic field to thin film during sputtering was designed for controlling the magnetic anisotropy using a three dimensional finite element method, and the effects of the external magnetic field on the magnetic properties of sputtered thin films were investigated. Both the intensity and the uniformity of the magnetic flux density in the sputter zone (50 mm ${\times}$50 mm) was dependent on not only the shape and size of the magnet device but also the magnitude of stray fields from the magnet. For the magnet device in which the distance between two magnets or two pure iron bars was 80-90 mm, the magnetic flux density along the direction normal to the external magnetic field direction was minimum. The two row magnets increased the magnetic flux density and uniformity along the external magnetic field direction. An Fe thin film sputtered using the optimized magnet device showed a higher remanence ratio than that fabricated under no external magnetic field.