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http://dx.doi.org/10.3365/KJMM.2011.49.6.505

Effects of an External Magnetic Field on the Magnetic Properties of Sputtered Magnetic Thin Films  

Ahn, Hyun Tae (Opto-electronic Materials Center, Korea Institute of Science & Technology, Department of Materials Science and Engineering, Korea University)
Lim, Sang Ho (Department of Materials Science and Engineering, Korea University)
Jee, Kwang Koo (Opto-electronic Materials Center, Korea Institute of Science & Technology)
Han, Jun Hyun (Department of Nano Materials Engineering, Chungnam National University)
Publication Information
Korean Journal of Metals and Materials / v.49, no.6, 2011 , pp. 505-513 More about this Journal
Abstract
A magnetic device which enables the application of a strong and uniform magnetic field to thin film during sputtering was designed for controlling the magnetic anisotropy using a three dimensional finite element method, and the effects of the external magnetic field on the magnetic properties of sputtered thin films were investigated. Both the intensity and the uniformity of the magnetic flux density in the sputter zone (50 mm ${\times}$50 mm) was dependent on not only the shape and size of the magnet device but also the magnitude of stray fields from the magnet. For the magnet device in which the distance between two magnets or two pure iron bars was 80-90 mm, the magnetic flux density along the direction normal to the external magnetic field direction was minimum. The two row magnets increased the magnetic flux density and uniformity along the external magnetic field direction. An Fe thin film sputtered using the optimized magnet device showed a higher remanence ratio than that fabricated under no external magnetic field.
Keywords
magnetic thin film; magnetic anisotropy; magnetic field sputtering; finite element method;
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1 S. J. Murray, M. Marioni, S. M .Allen, T. A. Lograsso, and R. C. O'Handley, Appl. Phys. Lett. 77, 886 (2000).   DOI   ScienceOn
2 K. Ullakko, Y. Ezer, A. Sozinov, G. Kimmel, P. Yakovenko, and V. K. Lindroos, Scripta mater. 44, 475 (2001).   DOI   ScienceOn
3 N. Yoshikawa, T. Endo, S. Taniguchi, S. Awaji, K. Watanabe, and E. Aoyagi, J. Mater. Res. 17, 31 (2002).   DOI   ScienceOn
4 C. Wang, Q. Wang, Z. Wang, H. Li, K. Nakajima, and J. He, J. Crystal Growth 310, 1256 (2008).   DOI   ScienceOn
5 P. Rango, M. Lees, P. Lejay, A. Sulpice, R. Tournier, M. lngoldt, P. Germit, and M. Pernet, Nature 349, 770 (1991).   DOI
6 B.A. Legrand, D. Chateigner, R. Perrier de la Bathie, and R. Tournier, J. Magn. Magn. Mater. 173, 20 (1997).   DOI   ScienceOn
7 Y.H. Choa, T. Nakayama, T. Sekino, and K. Niihara, Met. & Mater. 5, 135 (1999).   DOI
8 G. A. Fischer and M. L. Rudee, J. Magn. Magn. Mater. 213, 335 (2000).   DOI   ScienceOn
9 B. G. Kim, S. D. Park, and S. S. Kim, Met. Mater. Int. 10, 559 (2004)   DOI   ScienceOn
10 H. Shokrollahi and K. Janghorban, J. Magn. Magn. Mater. 317, 61 (2007).   DOI   ScienceOn
11 T. E. Sheridan, M. J. Goeckner, and J. Goree, J. Vac. Sci. Technol. A5, 30 (1990).
12 I. Ivanov, P. Kazansky, L. Hultman, I. Pertov, and J. E. Sundgran, J. Vac. Sci. Technol. A12, 314 (1994).