• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1850-1851
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• 2001

광전자실험에 사용되고있는 수동 광학소자로는 lense, mirror, grating, prism, polarizer 등 이 있다. 본 연구에서는 각 소자들에 대한 수학적 모델과 실질적 구조에 의한 수치 해석적 모델인 Split-step을 angular spectrum 방법을 구현하고 이를 이용한 실험적 결과를 이론치와 비교 분석하여 모델의 정확성을 분석하였다.

• Current Optics and Photonics
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• 제4권3호
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• pp.193-199
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• 2020

In this paper we propose a dark-field digital holographic microscopy system based on 360-degree oblique illumination. This setup is constructed without using a dark-field objective. The principle of 360-degree oblique illumination of vortex beam and dark-field digital holographic microscopy are introduced theoretically and experimentally. By analyzing the reconstructed image of a dark-field digital hologram of a USAF 1951 target, it is proved that the imaging resolution can be improved by this method. And also, comparison and analysis are made on the reconstructed image of a bright-dark field digital hologram of a pumpkin stem slice, the result shows that the imaging contrast is also enhanced with this method, and it is effective for dark-field digital holographic microscopy imaging of large transparent biological samples.

• 한국세라믹학회지
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• 제55권5호
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• pp.510-514
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• 2018

Colloidal semiconductor quantum dots (QDs), because of the novel optical and electrical properties that stem from their three-dimensional confinement, have attracted great interest for their potential applications in such fields as bio-imaging, display, and opto-electronics. However, many semiconductors that can be exploited for QD applications contain toxic elements. Herein, we synthesized non-toxic ZnTe/ZnSe (core/shell) type-II QDs by pyrolysis method. Because of the unique type-II character of these QDs, their emission can range over an extended wavelength regime, showing photoluminescence (PL) from 450 nm to 580 nm. By optimizing the ZnSe shell growth condition, resulting ZnTe/ZnSe type-II QDs shows PL quantum yield up to ~ 25% with 35 nm PL bandwidth. Using a simple two step cation exchange reaction, we also fabricated ZnTe/ZnSe type-II QDs with absorption extended over the whole visible region. The visible-light sensitized heavy metal free ZnTe/ZnSe type-II QDs can be relevant for opto-electronic applications such as displays, light emitting diodes, and bio-imaging probes.

• Journal of Information Display
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• 제7권2호
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• pp.26-30
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• 2006

Insertion of a thin lithium fluoride (TLF) layer between an emitting layer (EML) and an electron transporting layer has resumed in the developement of a highly efficient and bright organic light-emitting diode (OLED). Comparing with the performance of the device as a function of position with the TLF layer in tris-(8-hydroxyquinoline) aluminum $(Alq_{3})$, we propose the optimal position for the TLF layer in the stacked structure. The fabricated OLED shows a luminance efficiency of more than 20 cd/A, a power efficiency of 12 Im/W (at 20 mA/$cm^{2}$), and a luminance of more than 22 000 cd/$m^{2}$ (at 100 mA/$cm^{2}$), respectively. We suggest that the enhanced performance of the OLED is probably attributed to the improvement of carrier balance to achieve a high level of recombination efficiency in an EML.

• Current Optics and Photonics
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• 제1권5호
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• pp.538-543
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• 2017

Progressive addition lenses (PAL) have very wide application in the modern glasses market. The unique progressive surface can make a lens have progressive refractive power, which can meet the human eye's different needs for distance-vision and near-vision. According to the national glasses fabrication standard, the difference between actual optical power after fabrication and nominal design value should be less than 0.1D over the lens effective area. The optical power distribution of PAL is determined directly by the surface. Consequently, the surface processing accuracy requirement is proposed. Beginning from the surface expressions of progressive addition lenses, the relationship equations between the surface sag and optical power distribution are derived. They are demonstrated through tolerance analysis and test of an example progressive addition lens with addition of 2.09D (5.46D-7.55D). The example addition surface is fabricated under given accuracy by a single-point diamond ultra-precision machine. The optical power of the PAL example is tested with a focal-meter after fabrication. The optical power addition difference between test result and design nominal value is 0.09D, which is less than 0.1D. The derived relationship between the surface error and optical power is verified from the PAL example simulation and test result. It can provide theoretical tolerance analysis proof for the PAL surface fabricating process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.394-394
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• 2007

Transparent conductive films can serve as a critical component in displays, solar cells, lasers, optical communication devices, and solid state lighting. Carbon nanotube (CNT) based transparent conductive films are fabricated on glass and polymer substrates. CNTs typically exist in form of quasi-crystalline bundles or highly entangled bundles containing tens of individual nanotubes. To achieve full potential, CNTs must be dispersed in a solvent or other organic media. CNTs are acid treated with nitric acid then the stable dispersion of CNTs in polar solvent such as alcohols, DMF, etc. is achieved by sonication. The solubility of CNTs correlates well with the area ratio of the D and G bands from Raman spectrum. Thin films are formed from well dispersed CNT solutions using spray coating method. CNT thin films exhibit a sheet resistance ($R_s$) of nearby $10^3\;{\Omega}/sq$ with a transmittance of around 80% on the visible light range, which is attributed by excellent dispersion and interaction among CNTs, solvents and polymeric binders.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.455-456
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• 2007

Optically transparent, highly conductive coating have been major theme of thin film science efforts for some years. In this work, t-MWNT(thin Multi-walled Carbon Nanotubes) are acid treated, then the stable dispersion of t-MWNTs in polar solvent such as alcohols, was achieved by sonication. The transparent conducting films are prepared using the one component solution of t-MWNT/epoxy binder via spray coating on glass substrate. The characterization of acid treated t-MWNTs was performed by Raman spectrometer. The opto-electrical properties of conducting films are analyzed by the binder concentration, and the effect of co-solvent on the compatibility and dispersibility of one component t-MWNT/epoxy binder solutions are discussed.

• Current Optics and Photonics
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• 제4권6호
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• pp.500-508
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• 2020

The rifling angle of artillery is an important parameter, and its determination plays a key role in the stability, hit rate, accuracy and service life of artillery. In this study, we propose an optical measurement method for the rifling angle based on angle error correction. The method is based on the principle of geometrical optics imaging, where the rifling on the inner wall of the artillery barrel is imaged on a CCD camera target surface by an optical system. When the measurement system moves in the barrel, the rifling image rotates accordingly. According to the relationship between the rotation angle of the rifling image and the travel distance of the measurement system, different types of rifling equations are established. Solving equations of the rifling angle are deduced according to the definition of the rifling angle. Furthermore, we added an angle error correction function to the method that is based on the theory of dynamic optics. This function can measure and correct the angle error caused by the posture change of the measurement system. Thus, the rifling angle measurement accuracy is effectively improved. Finally, we simulated and analyzed the influence of parameter changes of the measurement system on rifling angle measurement accuracy. The simulation results show that the rifling angle measurement method has high measurement accuracy, and the method can be applied to different types of rifling angle measurements. The method provides the theoretical basis for the development of a high-precision rifling measurement system in the future.

• 한국안전학회지
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• 제25권6호
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• pp.40-46
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• 2010

To protect press operator from the after-reach hazard, current Ministry of Labor Notification(MOLN) requires the use of a formula for calculating the safe distance away from the point of operation for locating press protective devices, Two Hand Control Devices(THCD) and Active Opto-Electronic Protective Devices(AOPD), on a power press. This formula is based on a same hand speed constant of 160cm/s. While EN standards use different hand speed constant for THCD and AOPD respectively. The objective of this study is to compare two guidelines on the hand speed constant published by MOLN and EN 692, also to propose a proper hand speed constant and validate it experimentally. As a experimental result, it could be known that hand speed constant of Ministry of Labor Notification should be improved as that of EN standards.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.343-343
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• 2011

ZnO has been introduced as one of the good candidates for next generation opto-electronics. Recently, ZnO is known to be suitable for the transparent electrode in organic solar cells and light emitting devices. The contact with n-type organic material has been studied due to the n-type properties of ZnO. However, the surface of ZnO has shown different electronic property with respect to its surface orientation. Therefore, it is presumed that there are differences in the interfacial electronic structures between organic materials and ZnO with different orientation. Therefore, it is required to classify the interfacial electronic structures according to the surface orientation of ZnO. In this study, we measured the interfacial electronic structures between the ZnO substrate having various orientations and a typical n-type organic material, tris-(8-hydroxyquinoline) aluminum (Alq3). In-situ x-ray and ultraviolet photoelectron spectroscopy measurements revealed the interfacial electronic structures. We found the changes in the electronic structures with respect to the orientation of ZnO substrate and it could be used to improve the contact between ZnO and Alq3.