• Proceedings of the KIPE Conference
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• 2012.11a
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• pp.5-6
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• 2012

In this paper, a simplified maximum power point tracking technique for the solar charger is presented. Main advantages of the proposed charger include low cost and optimized charge time. The maximum power point tracking method is used to deliver the maximum power from PV array to the battery thereby reducing the charge time. Moreover, the proposed technique which tracks the maximum power point by adjusting output current helps reduce the quantity of required number of sensors for the charger. The experimental protype was implemented by using an 80W PV array, a buck converter and a digital signal processor to verify the feasibility of the proposed method.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.331-331
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• 2012

With the NAND Flash scaling down, it becomes more and more difficult to follow Moore's law to continue the scaling due to physical limitations. Recently, three-dimensional (3D) flash memories have introduced as an ideal solution for ultra-high-density data storage. In 3D flash memory, as the process reason, we need to use poly-Si TFTs instead of conventional transistors. So, after combining charge trap flash (CTF) structure and poly-Si TFTs, the emerging device SONOS-TFTs has also suffered from some reliability problem such as hot carrier degradation, charge-trapping-induced parasitic capacitance and resistance which both create interface traps. Charge pumping method is a useful tool to investigate the degradation phenomenon related to interface trap creation. However, the curves for charge pumping current in SONOS TFTs were far from ideal, which previously due to the fabrication process or some unknown traps. It needs an optimization and the important geometrical effect should be eliminated. In spite of its importance, it is still not deeply studied. In our work, base-level sweep model was applied in SONOS TFTs, and the nonideal charge pumping current was optimized by adjusting the gate pulse transition time. As a result, after the optimizing, an improved charge pumping current curve is obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.1-4
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• 1998

In this paper, we have studied a variation of I-V characteristics, and time-dependent dielectric breakdown(TDDB) of thin layer NO and ONO film depending on nitridation and reoxidation time, respectively, and measured a variation of leakage current and charge-to-breakdown(Q$\_$bd/) of optimized NO and ONO film depending on ambient temperature, and then compared with the properties of conventional SiO$_2$. From the results, we find that these NO and ONO thin films are strongly influenced by process time and the optimized ONO film shows superior dielectric characteristics, and Q$\_$bd/ performance over the NO film and SiO$_2$, while maintaining a similar electric field dependence compared with NO layer.

• Journal of Radiation Protection and Research
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• v.44 no.2
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• pp.53-63
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• 2019

Background: As neutron fields are always accompanied by gamma rays, it is essential to distinguish neutrons from gamma rays in the detection of neutrons. Neutrons and gamma rays can be separated by pulse shape discrimination (PSD) methods. Recently, we performed characterization of a stilbene scintillator detector and an EJ-301 liquid scintillator detector with a high-speed digitizer DT5730 and investigated optimized PSD variables for both detectors. This study is for providing a basis for developing fast neutron/gamma-ray dual-particle imager. Materials and Methods: We conducted PSD experiments using stilbene scintillator and EJ-301 liquid scintillator and evaluated neutron and gamma ray discriminability of each PSD method with a $^{137}Cs$ gamma source and a $^{252}Cf$ neutron source. We implemented digital signal processing techniques to apply two PSD methods - the charge comparison (CC) method and the constant time discrimination (CTD) method - to distinguish neutrons from gamma rays. We tried to find optimized PSD variables giving the best discriminability in a given experimental condition. Results and Discussion: For the stilbene scintillator detector, the charge comparison method and the constant time discrimination method both delivered the PSD FOM values of 1.7. For the EJ-301 liquid scintillator detector, both PSD methods delivered the PSD FOM values of 1.79. With the same PSD variables, PSD performance was excellent in $300{\pm}100keVee$, $500{\pm}100keVee$, and $700{\pm}100keVee$ energy regions. This result shows that we can achieve an effective discrimination of neutrons from gamma rays using these scintillator detector systems. Conclusion: We applied both PSD methods to a stilbene and a liquid scintillator and optimized the PSD performance represented by FOM values. We observed a good separation performance of both scintillators combined with a high-speed digitizer and digital PSD. These results will provide reference values for the dual-particle imager we are developing, which can image both fast neutrons and gamma rays simultaneously.

• Korean Journal of Remote Sensing
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• v.18 no.2
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• pp.91-96
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• 2002

The performance characteristics of a satellite imager using a Time Delay and Integration(TDI) Charge Coupled Device (CCD) with fixed integration time is investigated for the variation of satellite altitude and tilt angle. In consequence of the investigation TDI synchronization using tilt imaging is proposed as a solution to compensate geometric performance degradation due to altitude decrease. The tilt angle optimized for the TDI synchronization at decreased altitude is presented. This result can be used for a TDI CCD imager with variable integration time in a certain range as well.

• Nuclear Engineering and Technology
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• v.52 no.7
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• pp.1503-1510
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• 2020

Ultra-low noise charge sensitive amplifiers (CSAs) based on various types of circuit board substrates, such as FR4, Teflon, and ceramics (Al₂O₃) with two different designs, PA1 and PA2, have been developed. They were tested to see the noise effect from the dielectric loss of the substrate capacitance before and after irradiation. If the electronic noise from the CSAs is to be minimized and the energy resolution enhanced, the shaping time has to be optimized for the detector, and a small feedback capacitance of the CSA is favorable for a better SNR. Teflon- and ceramic-based PA1 design CSAs showed better noise performance than the FR4-based one, but the Teflon-based PA1 design showed better sensitivity than ceramic based one at a low detector capacitance (<10 pF). In the PA2 design, the equivalent noise and the sensitivity were 0.52 keV FWHM for a silicon detector and 7.2 mV/fC, respectively, with 2 ㎲ peaking time and 0.1 pF detector capacitance. After 10, 100, 10³, 10⁴, and 10⁵ Gy irradiation the ENC and sensitivity characteristics of the developed CSAs based on three different substrate materials are also discussed.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.29 no.8
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• pp.437-445
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• 2017

Because of improvement of living standards and increased use of ice at home, built-in ice makers are of interest. In this study, refrigeration cycle of a unitary ice maker for residential usage was optimized using R-404A. Optimization was achieved through a search for proper refrigerant charge amount. For the present ice maker producing ice for 24 cups, the optimum charge amount was 200 g. In this configuration, the ice making cycle time was 17 minutes 53 seconds, ice production was 1.27 kg/h and COP was 0.310. After initial start-up, condensation and evaporation temperatures gradually decreased with time. As ice builds in the cup, heat transfer performance of the evaporator decreases, that results in decrease of evaporation and condensation temperatures. Replacement of existing slit nozzles with individual circular hole nozzles improved ice production capacity by 10 percent. Through visualization of ice formation in the ice cup, growth rate of the ice in the cup was relatively uniform.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.2 no.3
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• pp.431-437
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• 1998

In this paper, we have investigated the electrical properties of ultra-thin nitrided oxide(NO) and re-oxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. Especially, we have studied a variation of I-V characteristics, gate voltage shift, and time-dependent dielectric breakdown(TDDB) of thin layer NO and ONO film depending on nitridation and reoxidation time, respectively, and measured a variation of leakage current and charge-to-breakdown(Q$\_bd$) of optimized NO and ONO film depending on ambient temperature, and then compared with the properties of conventional SIO$\_2$. From the results, we find that these NO and ONO thin films are strongly influenced by process time and the optimized ONO film shows superior dielectric characteristics, and (Q$\_bd$) performance over the NO film and SIO$\_2$, while maintaining a similar electric field dependence compared with NO layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.193-198
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• 2005

NOR type flash 32 ${\times}$ 32 way are fabricated by using the typical 0.35 ${\mu}{\textrm}{m}$ CMOS process. The structure of array is the NOR type with common source line. In this paper, optimized program and erase voltage conditions are presented to realize multi-bit per cell at the CSL-NOR array. These are considered selectivity of selected bit and disturbances of unselected bits. Retention characteristics of locally trapped-charges in the nitride layer are investigated. The lateral diffusion and vertical detrapping to the tunneling oxide of locally trapped charges as a function of retention time are investigated by using the charge pumping method. The results are directly shown by change of the trapped-charges quantities.

• Nuclear Engineering and Technology
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• v.33 no.5
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• pp.514-525
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• 2001

Optimum characteristics of digital X-ray sensor components were analyzed to develop intra- oral dental digital X-ray image sensor using indirect method. Parametric analysis was carried out to optimize the phosphor thickness and the fiber optic plate (FOP) coupling to charge coupled device (CCD). X-ray absorption and light diffusion in the phosphor layer were analyzed by the Monte Carlo method. Real time X-ray image was obtained with prototype X- ray image sensor using general CCD camera with 1∼10 Ip/mm resolution. It has been previously shown that large resolution degradation in X-ray images was caused by miss alignment of FOP to CCD and optical adhesive selection. In this study, we reported that X-ray image quality was greatly improved by using optimized characteristics of alignment device and phosphor thickness.