• Korean Journal of Optics and Photonics
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• v.26 no.4
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• pp.209-216
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• 2015

A new method is proposed for optimal management of the fabrication and assembly tolerance of optical systems. The practical utility of the method is shown by applying it to a wide-angle anamorphic IR optical system. In this method the wavefront error of an optical system is expressed in terms of Zernike polynomials, and the sensitivity of the expansion coefficients to the variation of design parameters is analyzed. Based on this sensitivity analysis, the optimal tolerances of the fabrication parameters are determined and the best compensators for the assembly process are selected. By using this method, one can accurately predict with good confidence the best possible performance of a completed optical system in practice.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.285-285
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• 2011

EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Korean Journal of Optics and Photonics
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• v.13 no.1
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• pp.38-43
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• 2002

Simple principles of self-imaging in Multi-Mode Interference (MMI) devices are based on the approximation of propagation constants. The analysis of the basic nature of the self-imaging principle reveals the problems of previous optimization methods, and provides a new scheme to optimize the external variables for the reconciliation of approximation problems by considering two different tendencies of approximation effects. Furthermore, the representative mode method is proposed to make the application easy. This optimization method provides an essential method for stable design and fabrication of MMI devices with improved characteristics.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.629-632
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• 2005

ELID(ELectrolytic In-process Dressing) grinding is an excellent technique for mirror grinding of various advanced metallic or nonmetallic materials. A polishing process is also required for elimination of scratches present on ELID grinded surfaces. MAP(Magnetic Assisted Polishing) has been used as a polishing method due to its high polishing efficiency and to its resulting in a superior surface quality. This study describes an effective fabrication method combining ELID and MAP of nano-precision mirror grinding for glass-lens molding mould, such as WC-Co, which are extensively used in precision tooling material. And for the optics glass-ceramic named Zerodure, which is extensively used in precision optics components too. The experimental results show that the combined method is very effective in reducing the time required for final polishing. The best surface roughness of the polished glass-ceramic was within 1.7nm Ra in this study.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.3
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• pp.247-252
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• 2012

This study has been focused on application of ELID mirror-surface grinding technology for manufacturing single crystal optic sapphire. Single crystal sapphire is a superior material with optic properties of high performance as light transmission, thermal conductivity, hardness and so on. Mirror-surface machining technology is necessary to use sapphire as optic parts. The ELID grinding system has been set up for machining of the sapphire material. According to the ELID experimental results, it shows that the surface of sapphire can be eliminated by metal bonded wheel with micron abrasives and the surface roughness of 60nmRa can be gotten using grinding wheel of 2,000 mesh in 4.5um, depth of cut. In this study, the chemical experiments after ELID grinding also has been conducted to check chemical reaction between workpiece and grinding wheel on ELID grinding process. It shows that the chemical reaction has not happened as the results of the chemical experiments.

• Korean Journal of Optics and Photonics
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• v.22 no.6
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• pp.256-261
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• 2011

In this paper, a variable optical signal delay line based on coupled ring resonators is designed and fabricated in high-index contrast polymer material. The free spectral ranges (FSR) of the rings are designed to be 100 GHz, and 8 coupled rings are used. When two rings near a bus waveguide are in resonance, the optical delay is measured to be about 100 ps. When four rings are in resonance, the measured delay is about 180 ps. Both are close to the theoretical calculations.

• Korean Journal of Optics and Photonics
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• v.24 no.6
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• pp.331-337
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• 2013

A large optical surface is fabricated by grinding, polishing and figuring. The grinding process is the most rapid and has the largest amount of fabrication of all processes. If we measure the surface precisely and rapidly in the grinding process, it is possible to improve the efficiency of the fabrication process. Since the surface of grinding process is rough and not shiny, it is not easy to measure the surface using light so that we cannot use an interferometer. Therefore, we have to measure the surface using a mechanical method. We can measure the surface under the grinding process by using a laser tracker which is a portable 3-dimensional coordinate measuring machine. In this paper, we used the laser tracker to measure the surface error of 1 m diameter spherical mirror. This measurement result was compared to that of an interferometer. As a result, surface measurement error was found to be $0.2{\mu}m$ rms (root mean square) and $2.7{\mu}m$ PV (Peak to Valley), which is accurate enough to apply to the rough surface under the grinding stage.

• Korean Journal of Optics and Photonics
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• v.4 no.3
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• pp.266-275
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• 1993

We made $P_2O_5-SiO_2$ films on silicon for integrated optics application by low pressure chemical vapor deposition using TEOS (tetraethylorthosilicate) and TMPite (trimethylphosphite) and studied the deposition characteristics. The activation energy of the reaction was changed from 54.6 kcal/mole to 39.2 kcal/mole by incorporating the TMPite into the reaction of TEOS. The deposition rate and the P concentration of films increased in proportion to the flow of TMPite. As the deposition temperature increased, the deposition rate of the films increased but the P concentration decreased. The fabricated films showed the increase of refractive index of 0.0019 per 1 wt% of P concentration. The nonuniformity of films was ${\pm}$7% in thickness and ${\pm}$0.5wt% in P concentration and we showed this'nonuniformity is due to the nonuniform transport of TMPite. The films of more than 10wt% P concentration developed phosphoric acid on its surface when exposed to air for long time.

• Korean Journal of Optics and Photonics
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• v.6 no.3
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• pp.233-238
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• 1995

'#65279;We made $P_2O_5-SiO_2$ films on silicon for integrated optics application by low pressure chemical vapor deposition using TEOS(tetraethylorthosilicate), TMPite(trimethylphosphite) and phosphine($PH_3$). And We studied and compared between TMPite and PH, as a dopant of P in PSG films in the aspect of the de,position characteristics. Deposition rate of TMPate-PSG films was $55 \AA/min$ which was smaller than 90 A/min , that of $PH_3-PSG$ films. Thickness deviation of TMPate-PSG films was 2% and that of PH3-PSG was 4.5%. So TMPate-PSG films had a good quality in thickness uniformity. The range of refractive index was controlled from 1.445 to 1.468 at 633 nm in TMPate-PSG films and it was controlled from 1.456 to 1.476 in $PH_3-PSG$ films.

• Korean Journal of Optics and Photonics
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• v.20 no.3
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• pp.175-181
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• 2009

Holographic lithography is one of the potential technologies for next generation lithography which can print large areas (6") as well as very fine patterns ($0.35{\mu}m$). Usually, photolithography has been developed with two target purposes. One was for LCD applications which require large areas (over 6") and micro pattern (over $1.5{\mu}m$) exposure. The other was for semiconductor applications which require small areas (1.5") and nano pattern (under $0.2{\mu}m$) exposure. However, holographic lithography can print fine patterns from $0.35{\mu}m$ to $1.5{\mu}m$ keeping the exposure area inside 6". This is one of the great advantages in order to realize high speed fine pattern photolithography. How? It is because holographic lithography is taking holographic optics instead of projection optics. A hologram mask is the key component of holographic optics, which can perform the same function as projection optics. In this paper, Surface-Relief TIR Hologram Mask technology is introduced, and enables more robust hologram masks than those previously reported that were formed in photopolymer recording materials. We describe the important parameters in the fabrication process and their optimization, and we evaluate the patterns printed from the surface-relief TIR hologram masks.