• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.1
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• pp.7-11
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• 2010

The reduction of optical losses in mono-crystalline silicon solar cell by surface texturing is a critical step to improve the overall cell efficiency. In this study, we have changed the sub-micrometer structure on the micrometer pyramidal structure by 2-step texturing. The Ag particles were coated on the micrometer pyramid surface in $AgNO_3$ solution, and then the etching with hydrogen fluoride and hydrogen peroxide created even smaller nano-pyramids in these pyramids. As a result, we observed that the changes of size and thickness of nano structure on pyramidal surface were determined by $AgNO_3$ concentration and etching time. Using 2-step texturing, the surface of wafers is etched to resemble the rough surface of a lotus leaf. Lotus surface can reduce average reflectance from 10% to below 3%. This reflectance is less than conventional textured wafer including anti-reflection coating.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.4
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• pp.164-167
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• 2010

Bulk GaN single crystal with 1.5 mm thickness was successfully grown by hydride vapor phase epitaxy (HVPE) technique. Free-standing GaN substrates of $10{\times}10,\;15{\times}15$ mm size were fabricate after lift-off of sapphire substrate and their optical properties were characterized properties for device applications. X-ray diffraction patterns showed (002) and (004) peak, and the FWHM of the X-ray rocking curve (XRC) measurement in (002) was 98 arcsec. A sharp photoluminescence spectrum at 363 nm was observed and defect spectrum at visible range was not detected. The hexagonal-shaped etch-pits are formed on the GaN surface in $200^{\circ}C\;H_3PO_4$ at 5 minutes. The defect density calculated from observed etch-pits on surface was around $5{\times}10^6/cm^2$. This indicates that the fabricated GaN substrates can be used for applications in the field of optodevice, and high power electronics.

• Journal of the Korean earth science society
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• v.38 no.2
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• pp.129-140
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• 2017

Global solar radiation was calculated in this research using ground-base measurement data, meteorological satellite data, and GWNU (Gangneung-Wonju National University) solar radiation model. We also analyzed the accuracy of the GWNU model by comparing the observed solar radiation according to the total cloud cover. Our research was based on the global solar radiation of the GWNU radiation site in 2012, observation data such as temperature and pressure, humidity, aerosol, total ozone amount data from the Ozone Monitoring Instrument (OMI) sensor, and Skyview data used for evaluation of cloud mask and total cloud cover. On a clear day when the total cloud cover was 0 tenth, the calculated global solar radiations using the GWNU model had a high correlation coefficient of 0.98 compared with the observed solar radiation, but root mean square error (RMSE) was relatively high, i.e., $36.62Wm^{-2}$. The Skyview equipment was unable to determine the meteorological condition such as thin clouds, mist, and haze. On a cloudy day, regression equations were used for the radiation model to correct the effect of clouds. The correlation coefficient was 0.92, but the RMSE was high, i.e., $99.50Wm^{-2}$. For more accurate analysis, additional analysis of various elements including shielding of the direct radiation component and cloud optical thickness is required. The results of this study can be useful in the area where the global solar radiation is not observed by calculating the global solar radiation per minute or time.

• Imaging Science in Dentistry
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• v.48 no.2
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• pp.97-101
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• 2018

Purpose: This study evaluated the radiopacity of contemporary luting cements using conventional and digital radiography. Materials and Methods: Disc specimens (N=24, n=6 per group, ø$7mm{\times}1mm$) were prepared using 4 resin-based luting cements (Duolink, Multilink N, Panavia F 2.0, and U-cem). The specimens were radiographed using films, a complementary metal oxide semiconductor (CMOS) sensor, and a photostimulable phosphor plate (PSP) with a 10-step aluminum step wedge (1 mm incremental steps) and a 1-mm-thick tooth cut. The settings were 70 kVp, 4 mA, and 30 cm, with an exposure time of 0.2 s for the films and 0.1 s for the CMOS sensor and PSP. The films were scanned using a scanner. The radiopacity of the luting cements and tooth was measured using a densitometer for the film and NIH ImageJ software for the images obtained from the CMOS sensor, PSP, and scanned films. The data were analyzed using the Kruskal-Wallis and Mann-Whitney U tests. Results: Multilink (3.44-4.33) showed the highest radiopacity, followed by U-cem (1.81-2.88), Panavia F 2.0 (1.51-2.69), and Duolink (1.48-2.59). The $R^2$ values of the optical density of the aluminum step wedge were 0.9923 for the films, 0.9989 for the PSP, 0.9986 for the scanned films, and 0.9266 for the CMOS sensor in the linear regression models. Conclusion: The radiopacities of the luting materials were greater than those of aluminum or dentin at the same thickness. PSP is recommended as a detector for radiopacity measurements because of its accuracy and convenience.

• Journal of Periodontal and Implant Science
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• v.35 no.4
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• pp.939-948
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• 2005

The role of the periosteum on osteointegration of $Bio-Oss^{(R)}$(Geistlich, Wolhusen/Switzerland) was studied in rabbit calvarial defect. 12 New Zealand white male rabbits between 2.8 and 4 kg were included in this randomized, blinded, prospective study. Each rabbit was anesthetized with Ketamine HCl(5 mg/kg) and Xylazine HCl(1.5 ml/kg). An incision was made to the bony cranium and the periosteum was reflected. Using a 6-mm trephine bur(3i. USA), four 8-mm defects were created with copious irrigation. The defects were classified into barrier membrane($Tefgen^{(R)}$, Lifecore Biomedical. Inc, U.S.A.) only group as a control, $Bio-Oss^{(R)}$ with barrier membrane group, $Bio-Oss^{(R)}$ with periosteum covering group, and $Bio-Oss^{(R)}$ without periosteum covering group. There were 2 rabbits in each group. The wound was closed with resorbable suture materials. Rabbits were sacrificed using phentobarbital(100 mg/kg) intravenously at 1, 2, and 4 weeks after surgery. The samples were fixed in 4% paraformaldehyde, and decalcified in hydrochloric acid decalcifying solution(Fisher Scientific, Tustin, CA) at $4^{\circ}C$ for 2-4 weeks. It was embedded in paraffin and cut into 6 ${\mu}m$ thickness. The sections were stained with H & E and observed by optical microscope. The results were as follows; 1. The periosteum played an important role in osteointegration of $Bio-Oss^{(R)}$ in bone defects. 2. When the periosteum remained intact and $Bio-Oss^{(R)}$ was placed on the defect, $Bio-Oss^{(R)}$ with periosteum covering has been incorporated into the newly formed bone from 2-week postoperatively. 3. When the periosteum was removed at the surgical procedure, invasion of connective tissue took place among the granules, and new bone formation was delayed compared to periosteum covering group. Therefore, when the bone grafting was performed with periosteal incision procedure to achieve tension-free suture, the integrity of the overlying periosteum should be maintained to avoid fibrous tissue ingrowth.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.3
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• pp.124-127
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• 2005

It is demonstrated that the annealing process for Ti in-diffusion to z-cut $LiNbO_3$ at temperature lower than the curie temperature in a platinum (Pt) box can cause a ferroelectric micro-domain inversion at the +z surface and Li out-diffusion, therefore which should be avoided or suppressed for waveguide type periodically poled lithium niobate (PPLN) devices. The depth of the inversion layer depends on the Ti-diffusion conditions such as temperature, atmosphere, the sealing method of $LiNbO_3$ in the Pt box and crystal orientation is experimentally examined. The result shows that the polarization-inverted domain boundary appears at the only +z surface and its thickness is about $1.6{\mu}m$. Also, for the etched $LiNbO_3$, surface the domain shape was observed by the optical microscope and atomic force microscopy (AEM), and distribution of the cation concentrations in the $LiNbO_3$ crystal by the secondary ion mass spectrometry (SIMS).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.5
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• pp.227-231
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• 2010

Super hydrophilic $TiO_2$ thin films with photocatalytic property were successfully fabricated on a glass substrate by liquid phase deposition (LPD). The $TiO_2$ thin film formed nano particles on a surface at $70^{\circ}C$. As an immersion time in $TiF_4$ solution increased, the thickness of thin films gradually increased. $TiO_2$ thin film showed a water contact angel of below ca. $5^{\circ}$ and the transmittance of ca. 75~90 % in visible range. In addition, $TiO_2$ thin film showed the photocatalytic property to decompose methyl orange solution by the illumination of UV light. The surface morphologies, optical properties and contact angel of prepared thin films with a different immersion time were measured by field emission scanning electron microscope (FE-SEM), atomic force microscope (AFM), UV-Vis spectrophotometer and contact angle meter.

• Journal of the Korean Chemical Society
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• v.57 no.5
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• pp.618-624
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• 2013

We demonstrated unique inter- and intra-plasmonic coupling effects in bimetallic Au@Ag core-shell NP arrays which are regularly or randomly arranged on self-assembled block copolymer (BCP) inverse micelle monolayers. Polyvinylpyrrolidone (PVP)-stabilized Au@Ag core-shell NP arrays in regular or disordered configuration were incorporated and assembled on reconstructed PS-b-P4VP inverse micelle templates through two types of processes. The intensively enhanced LSPR coupling properties of individual and assembled Au@Ag NPs were evaluated by UV-visible spectroscopy in terms of the type of ligand stabilizer, coupling between Au and Ag, thickness of Ag shell, and type of array configuration. Finally, Au@Ag core-shell NP arrays were employed as active substrates for surface enhanced Raman spectroscopy (SERS) and a significantly enhanced signal enhancement was observed in accordance with the coupling intensity of Au@Ag NPs patterns.