• 한국광학회:학술대회논문집
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• 한국광학회 2006년도 동계학술발표회 논문집
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• pp.229-230
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• 2006

• 한국광학회:학술대회논문집
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• 한국광학회 2008년도 동계학술발표회 논문집
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• pp.331-332
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• 2008

• 한국광학회:학술대회논문집
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• 한국광학회 1997년도 Advance Program of 14th optics andquantum Electronics conference, 1997제14 회 광학 및 양자전자 학술 발표회 논문 요약집
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• pp.16-16
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• 1997

• 센서학회지
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• 제24권6호
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• pp.364-367
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• 2015

Tin oxide thin films were fabricated on glass substrates by the successive ionic layer adsorption and reaction (SILAR) method at room temperature and ambient pressure. Before measuring their properties, all samples were annealed at $500^{\circ}C$ for 2 h in air. Film thickness increased with the number of cycles; X-ray diffraction patterns for the annealed $SnO_2$ thin films indicated a $SnO_2$ single phase. Thickness of the $SnO_2$ films increased from 12 to 50 nm as the number of cycles increased from 20 to 60. Although the optical transmittance decreased with thickness, 50 nm $SnO_2$ thin films exhibited a high value of more than 85%. Regarding electronic properties, sheet resistance of the films decreased as thickness increased; however, the measured resistivity of the thin film was nearly constant with thickness ($3{\times}10^{-4}ohm/cm$). From Hall measurements, the 50 nm thickness $SnO_2$ thin film had the highest mobility of the samples ($8.6cm^2/(V{\cdot}s)$). In conclusion, optical and electronic properties of $SnO_2$ thin films could be controlled by adjusting the number of SILAR cycles.

• 한국전기전자재료학회논문지
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• 제11권8호
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• pp.637-645
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• 1998

The characteristics of waveguide, electrode and packaging fabricated for acousto-optic tunable filters(AOTF) used for optical communications were analyzed. A $Ti:LiNbO_3$in-diffusing method was employed for the formation of the optical waveguide with a dimension of width $8{\mu}m$, length $30000-50000{\mu}m$ and varying the thickness. The diffusion was carried at $1050^{\circ}C$ for 8 hours to pattern the optical waveguide. The resulted waveguide exhibited a single mode at 1550nm optical wavelength. The width of IDT, with 10 SAM periods, was $5000{\mu}m$ . Impedances of the electrodes deposited with Au were analyzed using a network analyzer; $48.1\Omega$ at the center frequency of 193MHz for electrode thickness of $1500{\AA}$ and $50.7\Omega$ at the center frequency of 192MHz for $1600\AA$. And the characteristics of packaged AOTF was analyzed. When the electrical frequency 177.1MHz was applied to the device, the mode conversion efficiency was measured as 63% at the optical wavelength 1515nm.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 하계종합학술대회 논문집
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• pp.962-965
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• 1999

We designed and fabricated a travelingwave CPW(coplanar waveguide) electrode for LiNbO$_3$ optical modulator. To Investigate the variation of microwave refractive index of these electrodes, we prepared the CPW electrode samples as a function of electrode thickness and measured the TDR and S-parameter. From this results, we could know the electrode conditions of index matching to 2.20 for 1550nm optical wave index for applying LiNbO$_3$ optical modulator and described. Also, we discussed the some properties of CPW electrode for applying LiNbO$_3$ optical modulator.

• 한국광학회지
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• 제20권1호
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• pp.29-33
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• 2009

본 연구에서는 저간섭성 반사계(Optical low-coherence reflectometry)를 이용하여 한 번의 측정으로 투명 시료의 두께와 굴절률을 동시에 측정하는 기술을 제안하였다. 제안된 방법은 유한 반경을 가진 시준된 광속을 시료의 경계 영역으로 입사시키는 것으로써, 시료가 있는 부분과 없는 부분으로부터 반사된 광속에 의한 간섭 무늬들을 한 번에 획득할 수 있다. 한번의 측정을 통해 얻어진 두 종류 간섭 무늬들의 상대적인 위치 차이를 이용하여 시료의 두께와 굴절률을 동시에 결정할 수 있었다. 굴절률의 정밀도는 이송장치의 위치 정밀도가 향상되고, 시료의 두께가 두꺼워 질수록 개선될 수 있으며, 본 실험에서는 약 $10^{-3}$의 정밀도로 굴절률을 결정할 수 있었다.

• 한국재료학회지
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• 제12권4호
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• pp.296-303
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• 2002

For potential application to quantum mechanical devices, nano-composite thin films, consisting of GaAs quantum dots dispersed in SiO$_2$ glass matrix, were fabricated and studied in terms of structural, chemical, and optical properties. In order to form crystalline GaAs quantum dots at room temperature, uniformly dispersed in $SiO_2$matrix, the composite films were made to consist of alternating layers of GaAs and $SiO_2$in the manner of a superlattice using RF magnetron sputter deposition. Among different film samples, nominal thickness of an individual GaAs layer was varied with a total GaAs volume fraction fixed. From images of High Resolution Transmission Electron Microscopy (HRTEM), the formation of GaAs quantum dots on SiO$_2$was shown to depend on GaAs nominal thickness. GaAs deposits were crystalline and GaAs compound-like chemically according to HRTEM and XPS analysis, respectively. From measurement of optical absorbance using a spectrophotometer, absorption edges were determined and compared among composite films of varying GaAs nominal thicknesses. A progressively larger shift of absorption edge was noticed toward a blue wavelength with decreasing GaAs nominal thickness, i.e. quantum dots size. Band gaps of the composite films were also determined from Tauc plots as well as from PL measurements, displaying a linear decrease with increasing GaAs nominal thickness.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.386-389
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• 2003

Recent issues in Optical Disk Drive (ODD) are focused on small size. Blu-ray Disk (BD), using blue laser (405nm wavelength) and high NA (0.85) objective lens. can store 25Gbyte on a conventional 12cm optical disk. Small Form Factor Optical (SFFO) drive uses 3cm disk which can store 1.5Gbyte on a disk. This kind of Small Form Factot Optical (SFFO) drive correspond to PCMCIA type memory (Compact Flash or Micro Drive). Preferably, Optical Disk has relatively low cost of the storage media per Byte rather than PCMCIA type memory. To make Small Form Factor Optical (SFFO) drive. optical pickup and its component must be miniaturized. Miniaturization of the component needs new concept of Optical Pickup. This paper is focused on two main subjects. One is Objective Lens design which can be manufactured on a wafer, and the other is optical path design of the pickup which has 2mm thickness.

• Journal of the Optical Society of Korea
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• 제1권2호
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• pp.116-119
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• 1997

Highly quantum efficient and multi-color emissible polymer light emitting devices have been realized utilizing poly (1-dodecyloxy-4-methyl-1, 3-phenylene)(2, 5"-terthienylene)(hereafter, mPTTh polymer) as an emitting layer and tris(8-hydroxyquinoline) aluminum (Alq3) as an electron transport layer. A single layer EL device of mPTTh polymer emits orange-colored light. EL efficiency increases as the thickness of Alq3 layer increases, but the emission color becomes visually broad when the Alq3 layer thickness is greater than 30nm since the relative peak intensity of green EL from Alq3 layer grows. EL color is changed from orange to greenish orange as the thickness of Alq3 layer grows. EL color is changed from orange to greenish orange as the thickness of Alq3 layer increases. EL efficiency of the double layer device was greatly enhanced by 3000 times compared with that of a single layer device. Alq3 layer in device acts as a hole blocking electron transporting layer and an emitting layer as a function of the thickness of Alq3 layer.ayer.