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Ryu, Han-Youl;Kim, Dae-Hwan
- Journal of the Optical Society of Korea
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- v.14 no.4
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- pp.415-419
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- 2010
A phosphor-conversion white light source is demonstrated using an InGaN-based blue laser diode (LD) and a yellow-emitting phosphor excited by the blue LD. The photometric and colorimetric properties of this blue-LD-based white light source are characterized. When injection current of the LD is 100 mA, luminous flux and luminous efficiency of the white light are found to be over 5 lm and 10 lm/W, respectively. When injection current is >90 mA, luminance is estimated to be larger than 10 Mcd/$cm^2$. In addition, color characteristics of the white light such as chromaticity coordinates, a correlated color temperature, and a color rendering index are found to be quite stable as current and temperature of the LD varies. The demonstrated LD-based white light source is expected to be used in high-brightness illumination applications with good color stability.
https://doi.org/10.3807/JOSK.2010.14.4.415 인용 PDF KSCI

Khan, Asif;Kim, In-Taek
- Journal of the Optical Society of Korea
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- v.12 no.3
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- pp.121-125
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- 2008
We address the problem of Blind Source Separation(BSS) of superimposed signals in situations where one signal has constant or slowly varying intensities at some consecutive locations and at the corresponding locations the other signal has highly varying intensities. Independent Component Analysis(ICA) is a major technique for Blind Source Separation and the existing ICA algorithms fail to estimate the original intensities in the stated situation. We combine the advantages of existing sparse methods and Kernel ICA in our technique, by proposing wavelet packet based sparse decomposition of signals prior to the application of Kernel ICA. Simulations and experimental results illustrate the effectiveness and accuracy of the proposed approach. The approach is general in the way that it can be tailored and applied to a wide range of BSS problems concerning one-dimensional signals and images(two-dimensional signals).
https://doi.org/10.3807/JOSK.2008.12.3.121 인용 PDF KSCI

김동섭;김선재;박정우;임호빈
- Electrical & Electronic Materials
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- v.5 no.1
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- pp.71-80
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- 1992
CdS박막을 5*$10^{-7}$Torr의 초기 진공하에서 CdS source 온도를 800~1100.deg.C로 하고 기판 온도를 100~200.deg.C로 하여 corning 7059 glass 기판위에 0.6~1.2.mu.m의 두께로 진공증착 방법으로 제조하였다. CdS soruce 온도와 기판온도가 증착된 CdS 박막의 미세구조와 결정구조 및 전기적, 광학적 성질에 미치는 영향을 알아 보았다. 기판을 가열하지 않은 경우는 source 온도가 증가할수록 전기비저항과 광투과도가 낮게 나타났다. Source 온도를 1100.deg.C로 고정하였을 경우 기판의 온도에 따라 전기비저항값과 광투과도값은 증가하였으며 optical band gap도 증가하였다. Soruce 온도가 1100.deg.C이고 기판온도가 190.deg.C일때 전기비저항값은 2*$10^{6}$ohm-cm였고 광투과도는 band gap 이상의 파장에서 80% 이상의 값을 가졌다. 증착된 CdS박막의 결정구조는 모두 hexagonal structure를 가지며 source 온도가 낮을수록 기판온도가 높을수록 C축으로 방향성있게 성장하였다.
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