• 한국광학회지
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• 제7권1호
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• pp.60-65
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• 1996

광섬유에 유도되는 stimulated Brillouin scattering 현상이 광전송시스템에 미치는 영향을 전송실험을 통해 측정하였고 그 제거실험 및 결과에 대해 기술하였다. 외부변조방식의 2.5Gb/s 광전송에서 분산천이 광섬유의 경우 약 10dBm의 입사광세기에서 stmulated brillouin scattering 현상이 유도되기 시작하였으며 이 때문에 전송오율이 증가하였다. 광원의 선폭을 200MHz로 확대함으로서 송신출력을 15dBm으로 높여도 stmulated Brillouin scattering 현상이 제거됨을 관측하였다.

• 대기
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• 제23권1호
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• pp.39-45
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• 2013

A parameterization for the scattering of longwave radiation by ice clouds has been developed based on spectral scattering property calculations with shapes and sizes of ice crystals. For this parameterization, the size distribution data by Fu (1996) and by Michell and Arnott (1994) are used. The shapes of ice crystal considered in this study are plate, solid column, hollow column, bullet-rosette, droxtal, aggregate, and spheroid. The properties of longwave scattering by ice crystals are presented as a function of the extinction coefficient, single-scattering albedo, and asymmetry factor. The heating rate and flux by the radiative parameterization model are calculated for wide range of ice crystal sizes, shapes, and optical thickness. The results are compared with the calculated results using a six-stream discrete ordinate scattering algorithm and Chou's method. The new method (with various habits and size distributions) provides a good simulation of the scattering properties and cooling rate in optically thin clouds (optical thickness < 5). Depending on the inclusion of scattering by ice clouds, the errors in the calculation of the cooling rates are significantly different.

• Journal of Magnetics
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• 제10권3호
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• pp.128-132
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• 2005

We report optical ab-plane properties of the layered sodium cobaltate, $Na_xCoO_2$ for x = 0.35 and 0.75. Two samples show metallic behaviors according to dc resistivity transport. Overall temperature dependent optical conductivities of both samples are very similar to those of the high temperature superconducting underdoped cuprates. We found that the optical scattering rate of x = 0.75 sample, which is in a Curie-Weiss metallic phase, varies linearly (non-Fermi liquid) with frequency and temperature while that of x = 0.35 sample, which is in a paramagnetic metallic phase, varies quadratically (Fermi liquid) with frequency and temperature. Both x = 0.35 and 0.75 samples have an onset of scattering around $600\;cm^{-1}$ which can be attributed to the interaction of charge carriers with a bosonic collective mode in a system.

• 전기학회논문지
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• 제57권1호
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• pp.92-97
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• 2008

This is a research to apply 1310nm single-mode optical fiber to a temperature sensor. The existing study of optical fiber sensor is complicated because it was made with various equipment. To vary scattering, the variation of optical frequency is measured by using Bragg(lattice) or pulse generator and also bulk system is created by YAG laser but there were some difficulties creating experimental environment and it was a problem that the stability of measured data was low. The temperature sensor system using the suggested sBs(stimulated Brillouin scattering:sBs) from this research is much more simplified straight-line system. To improve the trust and accuracy of noises from optical frequency and unclear results, it was analysed by using Neuro-Fuzzy algorithm. we tried to get more correct data than existing system. sBs measure that optical frequency changed due to the variation of temperature. The analyzed change rate of outcome by Fuzzy theory is 1.1 MHz.

• 대한기계학회논문집
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• 제16권3호
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• pp.547-554
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• 1992

본 연구에서는 Climet사의 백색광원 OPC인 CI226와 PMS사의 laser 광원 OPC인 LAS-X 및 HS-LAS의 응답특성을 측정하여 제작사가 제시한 응답특성과 비교하여 그 정 확성을 논하였으며 아울러 고유량(high flow rate) Clean Room용 OPC인 Climet CI- 7300, Met One 200, Hiac/Royco5120 등 3가지 장치에 관한 오계수의 원인을 박히고자 하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1593-1595
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m/hr$. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The hetero-epitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.735-738
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra$(2{\theta}=41.5^{\circ})$.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.953-957
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• 2002

Single crystal 3C-SiC (cubic silicon carbide) thin-films were deposited on Si(100) wafer up to the thickness of 4.3 ${\mu}{\textrm}{m}$ by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane; ｛CH$_{3}$｝$_{6}$ Si$_{2}$) at 135$0^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC film was 4.3 ${\mu}{\textrm}{m}$/hr. The 3C-SiC epitaxial film grown on Si(100) wafer was characterized by XRD (X-ray diffraction), AFM (atomic force microscopy), RHEED (reflection high energy electron diffraction), XPS (X-ray photoelecron spectroscopy), and Raman scattering, respectively. Two distinct phonon modes of TO (transverse optical) near 796 $cm^{-1}$ / and LO (longitudinal optical) near 974$\pm$1 $cm^{-1}$ / of 3C-SiC were observed by Raman scattering measurement. The heteroepitaxially grown film was identified as the single crystal 3C-SiC phase by XRD spectra (2$\theta$=41.5。).).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.452-455
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra$(2{\theta}=41.5^{\circ})$.