• Korean Journal of Materials Research
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• v.16 no.3
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• pp.183-187
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• 2006

We present the effects of rapid thermal annealing (RTA) temperature on the structural and optical properties of self-assembled InAs quantum dot (QD) structures grown on GaAs substrates by molecular beam epitaxy (MBE). The photoluminescence (PL) measurements are performed in a closed-cycle refrigerator as a function of temperature for the unannealed and annealed samples. RTA at higher temperature results in the increase in island size, the corresponding decrease in the density of islands, and the redshift in the PL emission from the islands. The temperature dependence of the PL peak energy for the InAs QDs is well expressed by the Varshni equation. The thermal quenching activation energies for the samples unannealed and annealed at $600^{\circ}C$ are found to be $25{\pm}5meV$ and $47{\pm}5$ meV, respectively.

• Journal of the Korean Ceramic Society
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• v.48 no.3
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• pp.251-256
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• 2011

The luminescence properties of polycrystalline ZnO annealed in reducing ambience ($H_2/N_2$) have been studied. An effective quenching of green luminescence with enhanced UV emission from polycrystalline ZnO is observed for the reduced ZnO. The variations of the UV and green luminescence band upon reduction treatment are investigated as a function of temperature in the range between 20 and 300 K. Upon annealing treatment in reducing ambience, the optical quality of polycrystalline ZnO is improved. The UV to green intensity ratio of sintered ZnO approaches close to zero (~0.05). However, this ratio reaches more than 13 at room temperature for polycrystalline ZnO annealed at $800^{\circ}C$ in reducing ambience. Furthermore, the full width at half maximum (FWHM) of the UV band of polycrystalline ZnO is reduced compared to unannealed polycrystalline ZnO. Electron paramagnetic resonance (EPR) measurements clearly show that there is no direct correlation between the green luminescence and oxygen vacancy concentration for reduced polycrystalline ZnO.

• Journal of the Korean Ceramic Society
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• v.52 no.2
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• pp.146-149
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• 2015

Silicate glasses with different $Nd_2O_3$ concentrations were prepared through conventional melt-quenching methods while PbS quantum dots (QDs) were precipitated through heat treatment. The peak wavelengths of absorption and the photoluminescence of PbS QDs shifted to the short-wavelength side as the concentration of $Nd_2O_3$ increased. The electron energy loss spectroscopy (EELS) indicated that $Nd^{3+}$ ions were preferentially distributed inside the PbS QDs instead of the glass matrix. In addition, there was no significant change in the lifetimes of the $Nd^{3+}:^4F_{3/2}$ fluorescence between the as-prepared glass ($607{\mu}s$) and the heat-treated glass($576{\mu}s$). $Nd^{3+}$ ions were surrounded by oxygen instead of sulfur and the Nd-O clusters probably acted as nucleating centers for the formation of PbS QDs inside the glasses.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.553-557
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• 1999

In order to investigate the optical properties of the $Al_XGa_{1-X}N/GaN$ thin film grown by metalorganic chemical vapor deposition (MOCVD) method, the photoluminescene (PL), photocurrent (PC) and persistent photoconductivity (PPC) measurements were carried out at room temperature. The band gap of the $A1_x$$Ga_{1-x}$N/GaN was determined to 3.70 eV by the PL and PC measurements. The PC measurement on the light illumination from the top of the $A1_x$$Ga_{1-x}$N/GaN thin film provides peaks at 3.70, 3.43, and around 2.2 eV. The PC spectrum by the illumination passing through from the substrate of the sample can be shown at 3.43 eV together with a broad tail band from the GaN band edge to around 2.23 eV. The photocurrent quenching and anomalous PPC decay observed in PPC measurements indicate that metastable electron states are fomed in the band gap of GaN layer to trap electrons which can be tunneled the potential barrier for long recovery time.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.103.1-103.1
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• 2014

Due to their excellent optical and electrochemical properties, conjugated polymers have attracted much attention over the last two decades and employed to opto-electrical devices. In particular, conjugated polymers possess many attractive features that make them suitable for a variety of sensing task. For example, their delocalized electronic structures can be strongly modified by varying the surrounding environment, which significantly affected molecular energy level. In other word, conjugated polymers can detect and transduce the environmental information into a fluorescence signal. Conjugated polymers also display amplified quenching compared to small molecule counterparts. This amplified fluorescence quenching is attributed to the delocalization and migration of the excitons along the conjugated polymer backbones. Long backbones of conjugated polymer provide the transporting path for electron as a conduit, allowing that excitons migrate rapidly into quencher site along the backbone. This is often referred to as the molecular wire effect or antenna effect. Moreover, structures of conjugated polymers can be easily tailored to adjust solubility, absorption/emission properties, and regulation of electron/energy transfer. Based on this versatility, conjugated polymers have been utilized to many novel sensory platforms as a promising material. In this tutorial, I will highlight a variety of fluorescence sensors base on conjugated polymer and explain their sensory mechanism together with selected examples from reference literatures.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.51-56
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• 2019

LuAG:Ce(Lu₃Al₅O₁₂:Ce³⁺) nano phosphor were synthesized by applying the coprecipitation method. It is used to increase the color rendering of phosphor ceramic plate for high power LEDs and laser lighting. Internal quantum efficiency and absorption of LuAG:Ce nano phosphor are 51.5 % and 64.4 %, respectively, which is higher than the previously studied nano phosphors. The maximum absorption wavelength of this phosphor is 450 nm blue light, and the emission wavelength is 510 nm. The emission wavelength shifted to longer wavelength when the concentration of Ce increased in the heat treatment of the reducing atmosphere. Thermal quenching of LuAG nano phosphor was 70 % at 200 ℃, it was explained by their significant quenching of all raman scattering modes, implying the restriction of electron-phonon couplings caused by their defects.

• Korean Journal of Materials Research
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• v.31 no.10
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• pp.582-585
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• 2021

Y₂O₃:Eu_x (x = 0.005, 0.01, 0.02, 0.03, 0.05, 0.1 mol) phosphors are synthesized with different concentrations of Eu³⁺ ions by solvothermal method. The crystal structure, surface and optical properties of the Eu doped Y₂O₃ phosphors are investigated using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and photoluminescence (PL) and photoluminescence excitation (PLE) analyses. From X-ray diffraction (XRD) results, the crystal structure of the Eu doped Y₂O₃ phosphor is found to be cubic. The maximum emission spectra of the Eu doped Y₂O₃ phosphors are observed at 0.05 mol Eu³⁺ concentration. The photoluminescence of 615 nm in the Eu doped Y₂O₃ phosphors is associated with ⁵D₀ → ⁷F₂ transition of Eu³⁺ ions. The decrease in emission intensity of 0.1 mol Eu doped Y₂O₃ is interpreted by concentration quenching. The International Commission on Illumination (CIE) coordinates of 0.05 mol Eu doped Y₂O₃ phosphor are X = 0.6547, Y = 0.3374.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.48 no.3
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• pp.23-29
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• 2016

Effects of cationic polyvinylamine (PVAm) dry strength agent on effectiveness of optical brightening agent (OBA) during fine papermaking and the mechanism for brightness reduction of paper by PVAm was investigated by UV/Vis spectroscopy and turbidity measurement of OBA solution with PVAm. It was shown that PVAm reduced brightness of paper while opacity was not varied and tensile strength of paper was increased. Tetra-type OBA solution showed the peaks around the wavelength of 280 nm and 330 nm and the increase in the OBA concentration increased the UV absorbance in all wavelength. Addition of PVAm into the OBA solution decreased the UV absorbance at 280 nm. Turbidities of OBA and PVAm solutions were close to zero, respectively, while the turbidity value increased for the mixed solution of OBA and PVAm in various mixing ratios and the highest value was obtained when the mixing ratio of PVAm and OBA was 5:5, meaning that cationic PVAm formed complex with anionic OBA. In conclusion, cationic PVAm could form a complex with anionic OBA and that reduced UV absorbance, resulting in the reduced brightness of paper.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.385-390
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• 2010

We studied the optical characteristics of ZnO:Al and $Al_2O_3$ coated ZnO nanorods. When ZnO:Al is deposited around the undoped ZnO nanorods, thermal diffusion of Al into ZnO gives rise to decrease the binding energy of neutral donor bound exciton whereas an insulating Al2O3 is coated around ZnO, we found that semiconducor-insulator interface states play an important role in optical quenching.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1144-1149
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• 2001

In this research, the fabrication of Si/SiO$_2$optical waveguide amplifier by FHD(Flame Hydrolysis Deposition) and Solution Doping was carried out. It was observed that the reduction of fluorescence was prevented up to 0.14 wt% Er whn 0.48 wt% Al was doped and the FWHA of $1.5mutextrm{m}$ fluorescence band increased by 5 nm as increasing amount of Al. Therefore from these results, we could confirm depressing concentration quenching of Er ions and increasing FWHM of fluorescence spectrum by addition of Al.