• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.342-347
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• 2012

The optical properties of InAs quantum dots (QDs) grown on a GaAs substrates by migration enhanced molecular beam epitaxy method have been investigated by using photoluminescence (PL) and time-resolved PL measurements. The luminescence properties of InAs/GaAs QDs have been studied as functions of temperature, excitation laser power, and emission wavelength. The PL peak of InAs QDs capped with $In_{0.15}Ga_{0.85}As$ layer (QD2) measured at 10 K is redshifted about 80 nm compared with that of InAs QDs with no InGaAs layer (QD1). This redshift of QD2 is attributed to the increase in dot size due to the diffusion of In from the InGaAs capping layer. The PL decay times of QD1 and QD2 at 10 K are 1.12 and 1.00 ns taken at the PL peak of 1,117 and 1,197 nm, respectively. The reduced decay time of QD2 can be explained by the improved carrier confinement and enhanced wave function overlap due to increased QD size. The PL decay times for both QD1 and QD2 are independent on the emission wavelength, indicating the uniformity of dot size.

• Korean journal of food and cookery science
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• v.3 no.1
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• pp.31-36
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• 1987

The purpose of this study is to investigate the physicochemcal Properties of the cowpea crude and refined starch and to present the basic data for physicochemical factor which gives the properties of Mook to cowpea starch gel. Water binding capacity of crude starch was 235. In and that of refined starch was 186.0%. The pattern of change in swelling power and solubility for increasing temperature started to increase at $60^{\circ}C$ and increased rapidly from $70^{\circ}C$, for both of crude and refined starch. The optical transmittance of 0.2% crude and refined starch suspensions were increased from $65^{\circ}C$ and showed rapid increasement during 68~$80^{\circ}C$, and their curves showed two-stage processes. The gelatinization pattern for 6n crude and refined starch suspensions were investigated by the Brabender amylograph. The corves showed the pasting temperature of $72.0^{\circ}C$ and $72.1^{\circ}C$, peak height of 11303.U. ($88.0^{\circ}C$) and 970 B.U. ($83.5^{\circ}C$) for crude and refined starch, respectively, and both showed high viscosities when cooling. Blue values for crude and refined starch were 0.369 and 0.376 respectively. Alkali number of crude and refined starch were 7.77 and 7.34, and reducing values were 3.60 and 2. 10, respectively. Amylose content of cowpea starch was 33.7%. Periodate oxidation of the starch fractions resulted that amylose had the average molecular weight of 23590, degree of polymerization of 146 and amylopectin had the degree of branching of 3.42, glucose unit per segment of 29.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.10
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• pp.2149-2156
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• 2011

In this paper, design of a new 3-dimensional (3-D) 16-ary signal constellation with constant envelope is presented and analyzed. Unlike the conventional 16-ary constellations, all signal points of the new constellation are uniformly located on the surface of a sphere so that they have a unique amplitude level and a symmetrical structure. When average power of the constellations is normalized, the presented 16-ary constellation has around 11.4% increased minimum Euclidean distance (MED) as compared to the conventional ones that have non-constant envelope. As a result, a digital communication system which exploits the presented constellation has 1.2dB improved symbol error rate (SER). While signal points of the conventional constant-envelope constellation are not distributed uniformly on the surface of a sphere, those of the proposed constellation has a completely symmetric distribution. In addition, the new signal constellation has much lower computational complexity for practical implementation than the conventional one. Hence, the proposed 3-D 16-ary signal constellation is appropriate for the application to a communication system which strongly requires a constant-envelope characteristic.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.248-253
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• 2005

We designed and fabricated a compact multi-mode interference (MMI) wavelength demultiplexer using the concept of 'Improved Quasi-State' modes. The output power and extinction ratio were improved by utilizing modal phase error which is specially occurred in low-index contrast. For a designed demultiplexer, the mode propagation analysis with effective index approximation shows significant improvement of extinction ratio to -25 dB for both $1.31{\mu}m\;and\;1.51{\mu}m$ wavelength region and the split-length was reduced about 1/5 of other MMI devices. The fabricated device shows successful characteristics for both 1.31 and $1.55{\mu}m$ wavelengths. These results demonstrate the potential of low-index materials system and the embossing process for photonic integrated circuits.

• Korean Journal of Optics and Photonics
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• v.17 no.6
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• pp.556-563
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• 2006

We present a comprehensive study of a chirped pulse Ti:sapphire regenerative amplifier system operating at 1 kHz. Main constituents of the system are described in detail. The amplifier stage was first converted to a repetition rate-tunable kHz gain-switched nanosecond Ti:sapphire laser. Operation characteristics at different repetition rates such as build-up times of laser pulses, pump power-dependent output powers and pulse durations, damage thresholds, and tunability ranges were studied. Based on the results achieved, the switching time of the Pocket's cell used and the round trip numbers in the regenerative amplifier were optimized at 1 kHz. The output pulses with a pulse width of 50fs from a home-made Ken lens mode-locked Ti:sapphire oscillator were used as seed pulses. The pulses were expanded to 120ps in a grating stretcher prior to coupling into the 3-mirror amplifier cavity. After amplification and recompression, a stable 1kHz Ti:sapphire regenerative amplifier system, which delivers 85-fs, $320-{\mu}J$ pulses, was fully constructed.

• Korean Journal of Optics and Photonics
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• v.28 no.4
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• pp.166-171
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• 2017

Hydrogen gas is a green energy sources because it features no emission of pollutants during combustion. But hydrogen gas is very dangerous, being flammable and very explosive. Hydrogen gas detection is very important for the safety of a nuclear power plant. Hydrogen gas is generated by oxidation of nuclear fuel cladding during a critical accident, and leads to serious secondary damage in the containment building. This paper discusses the development of a Raman lidar system for remote detection and measurement of hydrogen gas. A small, portable Raman lidar system was designed, and a measurement algorithm was developed to quantitatively measure hydrogen gas concentration. To verify the capability of measuring hydrogen gas with the developed Raman lidar system, experiments were carried out under daytime outdoor conditions by using a gas chamber that can adjust the hydrogen gas density. As results, our Raman lidar system is able to measure a minimum density of 0.67 vol. % hydrogen gas at a distance of 20 m.

• Korean Journal of Food Science and Technology
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• v.27 no.3
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• pp.306-312
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• 1995

In order to know properties in rice starch during storage of rice, rice starch from stored rice(stored at $5^{\circ}C$, R.H. 65% and $30^{\circ}C$, R.H. 85%, for 16 weeks) used in this experiment. Water binding capacity of rice starch increased for 8 weeks, and then it decreased. As the storage period took longer, swelling power and solubility, optical transmittance, blue value, total amylose content and soluble amylose content decreased. For the same periods, changes in rice starch from stored rice$(30^{\circ}C$, R.H. 85%) were made more than those in rice starch at $5^{\circ}C$, R.H. 65%. The granule shape of rice starch, irrespective of storage periods and conditions, didn't make a significant difference. The relative crystallinity of the rice starch by X-ray diffraction didn't distinctly changed till the second week. But, at the fourth week, that by X-ray diffraction significantly decreased, and then slightly decreased. As the storage period took longer, gelatinization temperature, melting temperature and melting enthalpy measured by DSC got higher, but gelatinization enthalpy got lower. For the same storage period, gelatinization temperature, melting temperature, gelatinization enthalpy and melting enthalpy of rice starch stored at $30^{\circ}C$, R.H. 85% made changes more than those of rice starch stored at $5^{\circ}C$, R.H. 65% did.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.4
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• pp.164-167
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• 2010

Bulk GaN single crystal with 1.5 mm thickness was successfully grown by hydride vapor phase epitaxy (HVPE) technique. Free-standing GaN substrates of $10{\times}10,\;15{\times}15$ mm size were fabricate after lift-off of sapphire substrate and their optical properties were characterized properties for device applications. X-ray diffraction patterns showed (002) and (004) peak, and the FWHM of the X-ray rocking curve (XRC) measurement in (002) was 98 arcsec. A sharp photoluminescence spectrum at 363 nm was observed and defect spectrum at visible range was not detected. The hexagonal-shaped etch-pits are formed on the GaN surface in $200^{\circ}C\;H_3PO_4$ at 5 minutes. The defect density calculated from observed etch-pits on surface was around $5{\times}10^6/cm^2$. This indicates that the fabricated GaN substrates can be used for applications in the field of optodevice, and high power electronics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.