• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.53.2-53.2
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• 2010

지금까지 능동 구동 디스플레이의 TFT backplane에 사용하고 있는 채널 물질로는 수소화된 비정질 실리콘(a-Si:H)과 저온 폴리실리콘(low temperature poly-Si)이 대표적이다. 수소화된 비정질 실리콘은 TFT-LCD 제조에 주로 사용되는 물질로 제조 공정이 비교적 간단하고 안정적이며, 생산 비용이 낮고, 소자 간 특성이 균일하여 대면적 디스플레이 제조에 유리하다. 그러나 a-Si:H TFT의 이동도(mobility)가 1 cm2/Vs이하로 낮아 Full HD 이상의 대화면, 고해상도, 고속 동작을 요구하는 UD(ultra definition)급 디스플레이를 개발하는데 있어 한계 상황에 다다르고 있다. 또한 광 누설 전류(photo leakage current)의 발생을 억제하기 위해서 화소의 개구율(aperture ratio)을 감소시켜야하므로 패널의 투과율이 저하되고, 게이트 전극에 지속적으로 바이어스를 인가 시 TFT의 문턱전압(threshold voltage)이 열화되는 문제점을 가지고 있다. 문제점을 극복하기 위한 대안으로 근래 투명 산화물 반도체(transparent oxide semiconductor)가 많은 관심을 얻고 있다. 투명 산화물 반도체는 3 eV 이상의 높은 밴드갭(band-gap)을 가지고 있어 광 흡수도가 낮아 투명하고, 광 누설 전류의 영향이 작아 화소 설계시 유리하다. 최근 다양한 조성의 산화물 반도체들이 TFT 채널 층으로의 적용을 목적으로 활발하게 연구되고 있으며 ZnO, SnO2, In2O3, IGO(indium-gallium oxide), a-ZTO(amorphous zinc-tin-oxide), a-IZO (amorphous indium-zinc oxide), a-IGZO(amorphous indium-galliumzinc oxide) 등이 그 예이다. 이들은 상온 또는 $200^{\circ}C$ 이하의 낮은 온도에서 PLD(pulsed laser deposition)나 스퍼터링(sputtering)과 같은 물리적 기상 증착법(physical vapor deposition)으로 손쉽게 증착이 가능하다. 특히 이중에서도 a-IGZO는 비정질임에도 불구하고 이동도가 $10\;cm2/V{\cdot}s$ 정도로 a-Si:H에 비해 월등히 높은 이동도를 나타낸다. 이와 같이 a-IGZO는 비정질이 가지는 균일한 특성과 양호한 이동도로 인하여 대화면, 고속, 고화질의 평판 디스플레이용 TFT 제작에 적합하고, 뿐만 아니라 공정 온도가 낮은 장점으로 인해 플렉시블 디스플레이(flexible display)의 backplane 소재로서도 연구되고 있다. 본 실험에서는 rf sputtering을 이용하여 증착한 a-IGZO 박막에 대하여 열처리 조건 변화에 따른 a-IGZO 박막들의 광학적, 전기적 특성변화를 살펴보았고, 이와 더불어 a-IGZO 박막을 TFT에 적용하여 소자의 특성을 분석함으로써, 열처리에 따른 Transfer Curve에서의 우리가 요구하는 Threshold Voltage(Vth)의 변화를 관찰하였다.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.26 no.2
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• pp.225-236
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• 2016

Objectives: Nanomaterials have been used in various fields. As use of nanoproducts is increasing, workers dealing with nanomaterials are also gradually increasing. Exposure assessments for nanomaterials have been carried out for protection of worker's health in workplace. Exposure studies were mainly focused on manufacturing processes, but these studies on after-treatment processes such as refinement, weighing, and packing were insufficient. So, we investigated exposure characteristics of particles during after-treatment processes of $Al_2O_3$ fibers and Ni powders. Methods: Mass-production of Ni powder process was carried out in enclosed capture-type canopy hood. In a developing stage, $Al_2O_3$ was handled with a local ventilation unit. Exposure characteristics of particles were investigated for $Al_2O_3$ fiber and Ni powder processes during the periods of 10:00 to 16:00, 20 May 2014 and 13:00 to 16:00, 21 May 2014, respectively. Three real-time aerosol instruments were utilized in exposure assessment. A scanning mobility particle sizer(SMPS, nanoscan, model 3910, TSI) and an optical particle counter(OPC, portable aerosol spectrometer, model 1.109, Grimm) were used to determine the particle size distribution in the size range of 10-420 nm and $0.25-32{\mu}m$, respectively. In addition, a nanoparticle aerosol monitor(NAM, model 9000, TSI) was used to measure lung-deposited nanoparticle surface area. Membrane filters(isopore membrane filter, pore size of 100 nm) were also used for air sampling for the FE-SEM(model S-5000H, Hitachi) analysis using a personal sampling pump(model GilAir Plus by 2.5 L/min, Gilian). Conclusions: For Ni powder after-treatment process, only 27% increase in particle concentration was found during the process. However, for $Al_2O_3$ fiber after-treatment process, significant exposure(1.56-3.34 times) was observed during the process.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.351-352
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• 2011

그래핀(Graphene)은 2차원 평면구조의 $sp^2$ 탄소 결합으로 이루어진 물질이다. 일반적으로 그래핀은 탄소 원자 한층 정도의 얇은 두께를 가지면서 강철의 100배 이상 높은 강도, 다이아몬드보다 2배 이상 뛰어난 열 전도성, 그리고 규소보다 100배 이상 빠른 전자이동도 등의 매우 우수한 특성을 지닌다. 그래핀을 합성하거나 얻는 방법에는, 기계적 박리법(Micro mechanical exfoliation), 산화흑연(graphite oxide)을 이용한 reduced graphene oxide(RGO)방법과 탄화 규소(SiC)를 이용한 epitaxial growth 방법 등이 있지만, 대 면적화가 어렵거나 구조적 결함이 큰 문제점이 있다. 반면, 탄화수소(hydrocarbon)를 탄소 공급원으로 하는 열화학 기상 증착법(Thermal chemical vapor deposition, TCVD)은 구조적 결함이 상대적으로 적으면서 대 면적화가 가능하다는 이점 때문에 최근 가장 많이 이용되고 있는 방법이다. TCVD를 이용, 니켈, 몰리브덴, 금, 코발트 등의 금속에서 그래핀 합성연구가 보고되었지만, 대부분 수 층(fewlayer)의 그래핀이 합성되었다. 하지만, 구리 촉매를 이용하는 것이 단층 그래핀 합성에 매우 효율적이라는 연구결과가 보고되었다. 구리의 경우, 낮은 탄소융해도(solubility of carbon) 때문에 표면에서 self limiting 과정을 통하여 단층 그래핀이 합성된다. 그러나 단층 그래핀 일지라도 면저항(sheet resistance)이 매우 높고, 이론적 계산값에 비해 전자이동도(electron mobility)가 낮게 측정된다. 이러한 원인은 구조적 결함에서 기인된 것으로써 산업으로의 응용을 어렵게 만들기 때문에 양질의 단층 그래핀 합성연구는 필수적이다[1,2]. 본 연구에서는 TCVD를 이용하여 구리 포일(25 ${\mu}m$, Alfa Aeser) 위에 메탄가스를 탄소공급원으로 하여 수소를 함께 주입하고, 메탄가스의 양과 합성시간, 열처리 시간을 조절하면서 균일한 단층 그래핀을 합성하였다. 합성된 그래핀을 $SiO_2$ (300 nm)기판위에 전사(transfer)후 라만 분광법(raman spectroscopy)과 광학 현미경(optical microscope)을 통하여 분석하였다. 그 결과, 열처리 시간이 증가할수록 촉매로 사용된 구리 포일의 grain size가 커짐을 확인하였으며, 구리 포일 위에 합성된 그래핀의 grain size는, 구리 포일의 grain size에 의존하여 커짐을 확인하였다. 또한 동일한 grain 내의 그래핀은 균일한 층으로 합성되었다. 이는 기계적 박리법, RGO 방법, epitaxial growth 방법으로 얻은 그래핀과 비교하여 매우 뛰어난 결정성을 지님이 확인되었다. 본 연구를 통하여 면적이 넓으면서도 결정성이 매우 뛰어난 양질의 단층 그래핀 합성 방법을 확립하였다.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.347-351
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• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.404-411
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• 2015

A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.

• Applied Chemistry for Engineering
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• v.34 no.3
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• pp.207-212
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• 2023

Near-infrared (NIR) absorbing dyes have been applied to various applications such as optical filters, biotechnology, energy storage and conversion, coating additive, and traditionally information-storage materials. Because image sensors used in cellphones and digital cameras have sensitivity in the NIR region, the NIR cut-off filter is essential to achieving more clear images. As energy storage and conversion have been important, diverse NIR absorbing materials have been developed to extend the absorption region to the NIR region, and NIR absorbing materials-based research has proceeded to improve device performances. Adding NIR-absorbing dye with a photo-thermal effect to a self-healable coating system has been attractive for future mobility technology, and more effective self-healing properties have been reported. In this report, the chemical structures of representative NIR-absorbing dyes and state of the art research based on NIR-absorbing dyes are introduced.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.292-292
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• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.

• Journal of Sensor Science and Technology
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• v.12 no.6
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• pp.273-281
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• 2003

A stoichiometric mixture for $CdIn_2Te_4$ single crystal was prepared from horizontal electric furnace. The $CdIn_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgeman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. The (001) growth plane of oriented $CdIn_2Te_4$ single crystal was confirmed from back-reflection Laue patterns. The carrier density and mobility of $CdIn_2Te_4$ single crystal measured with Hall effect by van der Pauw method are $8.61{\times}10^{16}\;cm^{-3}$ and $242\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2Te_4$ single crystal obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.4750\;eV-(7.69{\times}10^{-3}\;eV)T^2/(T+2147)$. After the as-grown $CdIn_2Te_4$ single crystal was annealed in Cd-, In-, and Te-atmospheres, the origin of point defects of $CdIn_2Te_4$ single crystal has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Te}$, $Cd_{int}$, and $V_{Cd}$, $Te_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cd-atmosphere converted $CdIn_2Te_4$ single crystal to an optical n-type. Also, we confirmed that In in $CdIn_2Te_4$ did not form the native defects because In in $CdIn_2Te_4$ single crystal existed in the form of stable bonds.