• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.491-491
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• 2011

Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.

• 한국진공학회지
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• 제1권1호
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• pp.126-133
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• 1992

E-Beam 기법을 이용하여 증착시킨 Ag doped CdS 박막은 육방정계이고 공기, Ar 분위기에서 $^550{\circ}C$로 열처리한 결과 grain size가 1$mu extrm{m}$ 정도로 성장되었고, Van Der Pauw 방법으로 구한 Hall data로부터 CdS crystal은 n형 반도체이고 상온에서의 carrier 농 도는 2.7 $\times$ 1011cm-3이고 Hall mobility는 5.8 $\times$ 102cm2V-1sec-1정도임을 알 수 있었다. CdS : Ag 박막의 PL spectra는 Gaussian curve를 보여주었고, spectra peak는 파장이 520nm 근처에 위치하고 있으며, CdS : Ag 박막에서의 광전류(pc)와 암전류(dc)의 ratio(pc/dc)는 공기 중에서 열처리한 시료의 값이 크다는 것을 알 수 있었다.

• 한국진공학회지
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• 제16권4호
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• pp.267-272
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• 2007

라디오파 마그네트론 스퍼터링 방법으로 유리 기판 위에 Al 도핑된 ZnO (AZO) 박막을 성장시켰다. 증착시 스퍼터링 가스로 사용하는 산소 유량비의 변화에 따른 AZO 박막의 특성을 X-선 회절법, 원자 주사 현미경, 홀 효과 측정법으로 조사하였다. 증착 온도 $400^{\circ}C$에서 산소 유량비 0%로 증착된 AZO 박막은 가장 큰 c-축 우선 배향성과 최저의 비저항값 $6.9{\times}10^{-4}{\Omega}cm$을 나타내었다. 산소 유량비가 증가함에 따라 ZnO (002)면의 회절 피크의 세기는 실질적으로 감소하는 경향을 보였다. 또한, 산소 유량비가 감소함에 따라 전하 운반자의 농도와 홀 이동도는 증가하였으나, 전기 비저항은 감소하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.106-106
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• 2011

Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.76-76
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• 2011

Polymer-fullerene based bulk heterojunction (BHJ) solar cells can be fabricated in large area using low-cost roll-to-roll manufacturing methods. However, because of the low mobility of the BHJ materials, there is competition between the sweep-out of the photogenerated carriers by the built-in potential and recombination within the thin BHJ film [12-15]. Useful film thicknesses are limited by recombination. Thus, there is a need to increase the absorption by the BHJ film without increasing film thickness. Metal nanoparticles exhibit localized surface plasmon resonances (LSPR) which couple strongly to the incident light. In addition, relatively large metallic nanoparticles can reflect and scatter the light and thereby increase the optical path length within the BHJ film. Thus, the addition of metal nanoparticles into BHJ films offers the possibility of enhanced absorption and correspondingly enhanced photo-generation of mobile carriers. In this work, we have demonstrated several positive effects of shape controlled Au and Ag nanoparticles in organic P3HT/PC70BM, PCDTBT/PC70BM, Si-PCPDTBT/PC70BM BHJ-based PV devices. The use of an optimized concentration of Au and Ag nanomaterials in the BHJ film increases Jsc, FF, and the IPCE. These improvements result from a combination of enhanced light absorption caused by the light scattering of the nanomaterials in an active layer. Some of the metals induce the plasmon light concentration at specific wavelength. Moreover, improved charge transport results in low series resistance.

• Current Photovoltaic Research
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• 제3권3호
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• pp.101-105
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• 2015

ZnO is gathering great interest for large square optoelectrical devices of flat panel display (FHD) and solar cell as a transparent conductive oxide (TCO). Herewith, Mg and IIIA (Al, In) co-doped ZnO films were prepared on SLG substrate using RF magnetron sputtering system. The effect of variation of atomic weight % of Mg and ZnO have been investigated. The atomic weight % Al and In are of 3% and kept constant throughout. The numbers of samples were prepared according to their different contents, which are $M_{3%}AZO_{94%}$, $M_{4%}AZO_{93%}-(MAZO)$ and $M_{3%}IZO_{94%}$, $M_{4%}IZO_{93%}-(MIZO)$ respectively. A RF power of 225 W and working pressure of 6 m Torr was used for the deposition at $300^{\circ}C$. All of the two thin film show good uniformity in field emission scanning electron microscopy image. $M_{3%}AZO_{94%}$ thin film shows overall better performance among the all. The film shows the best lowest resistivity, carrier concentration, mobility and Sheet resistance and is found to be are of $8.16{\times}10^{-4}{\Omega}cm$, $4.372{\times}10^{20}/cm^3$, $17.5cm^2/vs$ and $8.9{\Omega}/sq$ respectively. Also $M_{3%}AZO_{94%}$ thin film shows the relatively high optical band gap energy of 3.7 eV with high transmittance more than 80% in visible region required for the better solar cell performance.

• 센서학회지
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• 제15권6호
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• pp.397-405
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• 2006

Single crystal $AgGaSe_{2}$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_{2}$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_{2}$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}10^{16}/cm^{3}$, $139cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $AgGaSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=1.9501 eV-($8.79{\times}10^{-4}{\;}eV/K)T^{2}$/(T+250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_{2}$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $AgGaSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n=1.

• 센서학회지
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• 제14권3호
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• pp.160-168
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• 2005

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_{2}O_{3}$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_{2}O_{3}$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}1016cm^{-3}$ and $299cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=3.3973 eV-($2.69{\times}10^{-4}$ eV/K)$T^{2}$/(T+463K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{6}$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n = 1.

• 한국재료학회지
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• 제27권4호
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• pp.216-220
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• 2017

The effect of electron beam (EB) irradiation on the electrical properties of Zn-Sn-O (ZTO) thin films fabricated using a sol-gel process was investigated. As the EB dose increased, the saturation mobility of ZTO thin film transistors (TFTs) was found to slightly decrease, and the subthreshold swing and on/off ratio degenerated. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies ($V_O$) increased from 10.35 to 12.56 % as the EB dose increased from 0 to $7.5{\times}10^{16}electrons/cm^2$. Also, spectroscopic ellipsometry analysis showed that the optical band gap varied from 3.53 to 3.96 eV with increasing EB dose. From the results of the electrical property and XPS analyses of the ZTO TFTs, it was found that the electrical characteristic of the ZTO thin films changed from semiconductor to conductor with increasing EB dose. It is thought that the electrical property change is due to the formation of defect sites like oxygen vacancies.

• 한국분말재료학회지
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• 제25권1호
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• pp.54-59
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• 2018

Sb-doped $SnO_2$ (ATO) transparent conducting films are fabricated using horizontal ultrasonic spray pyrolysis deposition (HUSPD) to form uniform and compact film structures with homogeneously supplied precursor solution. To optimize the molar concentration and transparent conducting performance of the ATO films using HUSPD, we use precursor solutions of 0.15, 0.20, 0.25, and 0.30 M. As the molar concentration increases, the resultant ATO films exhibit more compact surface structures because of the larger crystallite sizes and higher ATO crystallinity because of the greater thickness from the accelerated growth of ATO. Thus, the ATO films prepared at 0.25 M have the best transparent conducting performance ($12.60{\pm}0.21{\Omega}/{\square}$ sheet resistance and 80.83% optical transmittance) and the highest figure-of-merit value ($9.44{\pm}0.17{\times}10^{-3}{\Omega}^{-1}$). The improvement in transparent conducting performance is attributed to the enhanced carrier concentration by the improved ATO crystallinity and Hall mobility with the compact surface structure and preferred (211) orientation, ascribed to the accelerated growth of ATO at the optimized molar concentration. Therefore, ATO films fabricated using HUSPD are transparent conducting film candidates for optoelectronic devices.